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公开(公告)号：US09771496B2
公开(公告)日：2017-09-26
申请号：US14924997
申请日：2015-10-28
Applicant: Cabot Microelectronics Corporation
Inventor： Kevin Dockery , Helin Huang , Lin Fu , Tina Li
Abstract: Described are chemical-mechanical polishing compositions (e.g., slurries) and methods of using the slurries for chemical-mechanical polishing (or planarizing) a surface of a substrate that contains tungsten, the compositions containing cationic surfactant and cyclodextrin.
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公开(公告)号：US10344186B2
公开(公告)日：2019-07-09
申请号：US15629487
申请日：2017-06-21
Applicant: Cabot Microelectronics Corporation
Inventor： Alexander W. Hains , Tina Li
Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) wet-process ceria abrasive, (b) a surfactant comprising an amine-containing anchor group and ethylene oxide-propylene oxide stabilizing group, wherein the surfactant has a molecular weight of from about 1000 Daltons to about 5000 Daltons, (c) an aromatic carboxylic acid or heteroaromatic carboxylic acid, and (d) water, wherein the polishing composition has a pH of about 3 to about 6. The invention further provides a method of chemically mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrates contain silicon oxide.
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Patent Agency Ranking
公开(公告)号：US20150376462A1
公开(公告)日：2015-12-31
申请号：US14750204
申请日：2015-06-25
Applicant: Cabot Microelectronics Corporation
Inventor： Lin Fu , Steven Grumbine , Jeffrey Dysard , Tina Li
IPC: C09G1/02 , H01L21/3105
CPC classification number: C09G1/02 , C09K3/14 , C09K3/1436 , C09K3/1463 , C09K13/00 , H01L21/30625 , H01L21/31053 , H01L21/31055 , H01L21/3212
Abstract: A chemical-mechanical polishing composition includes colloidal silica abrasive particles having a chemical compound incorporated therein. The chemical compound may include a nitrogen-containing compound such as an aminosilane or a phosphorus-containing compound. Methods for employing such compositions include applying the composition to a semiconductor substrate to remove at least a portion of a layer.
Abstract translation: 化学机械抛光组合物包括其中掺入化学化合物的胶体二氧化硅磨料颗粒。 化合物可以包括含氮化合物如氨基硅烷或含磷化合物。 使用这种组合物的方法包括将组合物施加到半导体衬底以去除层的至少一部分。
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公开(公告)号：US09796882B2
公开(公告)日：2017-10-24
申请号：US15394090
申请日：2016-12-29
Applicant: Cabot Microelectronics Corporation
Inventor： Alexander W. Hains , Tina Li
CPC classification number: C09G1/02
Abstract: Described are compositions useful in methods for chemical-mechanical processing a surface of a substrate, especially a substrate that contains dielectric material, wherein the composition contains cyclodextrin and an alkylamine.
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5.发明授权CMP compositions selective for oxide over polysilicon and nitride with high removal rate and low defectivity 有权CMP组合物选择性优于多晶硅上的氧化物和具有高去除率和低缺陷率的氮化物公开(公告)号：US09165489B2
公开(公告)日：2015-10-20
申请号：US14289728
申请日：2014-05-29
Applicant: Cabot Microelectronics Corporation
Inventor： Tina Li , Kevin Dockery , Renhe Jia , Jeffrey Dysard
IPC: C09K13/00 , G09G1/02 , H01L21/3105 , C09K3/14
CPC classification number: G09G1/02 , C09G1/02 , C09K3/1463 , H01L21/31053
Abstract: The invention provides a chemical-mechanical polishing composition containing a ceria abrasive and a polymer of formula I: wherein X1 and X2, Y1 and Y2, Z1 and Z2, R1, R2, R3, and R4, and m are as defined herein, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.
Abstract translation: 本发明提供一种含有二氧化铈研磨剂和式I的聚合物的化学机械抛光组合物：其中X1和X2，Y1和Y2，Z1和Z2，R1，R2，R3和R4以及m如本文所定义， 水，其中所述抛光组合物具有约1至约4.5的pH。 本发明还提供了利用本发明的化学 - 机械抛光组合物对衬底进行化学机械抛光的方法。 通常，衬底含有氧化硅，氮化硅和/或多晶硅。
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公开(公告)号：US10301508B2
公开(公告)日：2019-05-28
申请号：US15414786
申请日：2017-01-25
Applicant: Cabot Microelectronics Corporation
IPC: C09G1/02 , B24B37/04 , H01L21/3105 , C09K3/14
Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) wet-process ceria, (b) a water-soluble cationic polymer or copolymer, (c) an aromatic carboxylic acid or heteroaromatic carboxylic acid, and (d) water, wherein the polishing composition has a pH of about 3 to about 6. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide.
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公开(公告)号：US09567491B2
公开(公告)日：2017-02-14
申请号：US14750204
申请日：2015-06-25
Applicant: Cabot Microelectronics Corporation
Inventor： Lin Fu , Steven Grumbine , Jeffrey Dysard , Tina Li
IPC: C09G1/02 , H01L21/3105 , H01L21/306 , H01L21/321 , C09K3/14 , C09K13/00
CPC classification number: C09G1/02 , C09K3/14 , C09K3/1436 , C09K3/1463 , C09K13/00 , H01L21/30625 , H01L21/31053 , H01L21/31055 , H01L21/3212
Abstract: A chemical-mechanical polishing composition includes colloidal silica abrasive particles having a chemical compound incorporated therein. The chemical compound may include a nitrogen-containing compound such as an aminosilane or a phosphorus-containing compound. Methods for employing such compositions include applying the composition to a semiconductor substrate to remove at least a portion of a layer.
Abstract translation: 化学机械抛光组合物包括其中掺入化学化合物的胶体二氧化硅磨料颗粒。 化合物可以包括含氮化合物如氨基硅烷或含磷化合物。 使用这种组合物的方法包括将组合物施加到半导体衬底以去除层的至少一部分。
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