摘要:
A device includes a device wafer having a circuit component formed thereon and having vias formed therein and a cap wafer bonded to the device wafer. The cap wafer has a cavity therein. The cavity has a post formed therein, and the post is positioned to mechanically support the vias formed in the device wafer. The cavity has a volume, the volume substantially enclosing the circuit component formed on the device wafer. The cavity has a width and height such that an impedance of a transmission line is dependent upon the width and height of the cavity, or the impedance of a transmission line is dependent upon the width of a center conductor within the cavity.
摘要:
A device includes a device wafer having a circuit component formed thereon and having vias formed therein and a cap wafer bonded to the device wafer. The cap wafer has a cavity therein. The cavity has a post formed therein, and the post is positioned to mechanically support the vias formed in the device wafer. The cavity has a volume, the volume substantially enclosing the circuit component formed on the device wafer. The cavity has a width and height such that an impedance of a transmission line is dependent upon the width and height of the cavity, or the impedance of a transmission line is dependent upon the width of a center conductor within the cavity.
摘要:
A micro-electromechanical system switch includes a substrate and a plurality of actuating electrodes formed the substrate wherein each actuating electrode is activatable. A cantilever beam has a first end and a second end and a plurality of stops formed thereon. The plurality of stops engages the substrate between the plurality of actuating electrode. A contact area is formed in the substrate and located to engage the second end of the cantilever beam. A voltage source applies a voltage to each actuating electrode independently in a sequence from an actuating electrode located adjacent to the first end of the cantilever beam to an actuating electrode located adjacent to the second end of the cantilever beam so that the plurality of stops sequentially engage the substrate between the plurality of actuating electrodes.
摘要:
A micro-electromechanical system switch includes a substrate and a plurality of actuating electrodes formed the substrate wherein each actuating electrode is activatable. A cantilever beam has a first end and a second end and a plurality of stops formed thereon. The plurality of stops engages the substrate between the plurality of actuating electrode. A contact area is formed in the substrate and located to engage the second end of the cantilever beam. A voltage source applies a voltage to each actuating electrode independently in a sequence from an actuating electrode located adjacent to the first end of the cantilever beam to an actuating electrode located adjacent to the second end of the cantilever beam so that the plurality of stops sequentially engage the substrate between the plurality of actuating electrodes.
摘要:
A capacitive RF switch and DC RF switch include a fixed electrode having a thin layer of metal and at least one pull-down electrode. A moving plate has a plurality of corrugations and a selective finger design. The capacitive switch includes a selective finger that comes into contact with the fixed electrode so as to minimize the stiction between the moving plate and the fixed electrode when the switch is closed. The DC switch comprises a plurality of dimples that are formed on the selective portion of the moving plate and are positioned to come into contact with the fixed electrode when the switch is closed so as to increase the contact force and lower the resistance between the moving plate and fixed electrode.
摘要:
A mechanical memory transistor includes a substrate having formed thereon a source region and a drain region. An oxide is formed upon a portion of the source region and upon a portion of the drain region. A pull up electrode is positioned above the substrate such that a gap is formed between the pull up electrode and the substrate. A movable gate has a first position and a second position. The movable gate is located in the gap between the pull up electrode and the substrate. The movable gate is in contact with the pull up electrode when the movable gate is in a first position and is in contact with the oxide to form a gate region when the movable gate is in the second position. The movable gate, in conjunction with the source region and the drain region and when the movable gate is in the second position, form a transistor that can be utilized as a non-volatile memory element.
摘要:
A microelectro-mechanical device which includes a fixed electrode formed on a substrate, the fixed electrode including a transparent, high resistance layer, and a moveable electrode formed with an anisotropic stress in a predetermined direction and disposed adjacent the fixed electrode. The device includes first and second electrically conductive regions which are isolated from one another by the fixed electrode. The moveable electrode moves to cover the fixed electrode and to electrically couple to the second conductive region, thus electrically coupling the first and second conductive regions, in response to a potential being applied across the fixed and moveable electrodes. The fixed electrode is transparent to electromagnetic signals or waves and the moveable electrode impedes or allows transmission of electromagnetic signals or waves.
摘要:
A method of producing sheets of crystalline material is disclosed, as well as devices employing such sheets. In the method, a growth mask is formed upon a substrate and crystalline material is grown at areas of the substrate exposed through the mask and laterally over the surface of the mask to form a sheet of crystalline mateGOVERNMENT SUPPORTWork described herein was supported by the U.S. Air Force.
摘要:
A method of producing sheets of crystalline material is disclosed which is employed in the construction of tandem solar cells. In the method, a growth mask is formed upon a substrate and crystalline material is grown at areas of substrate exposed through the mask and laterally over the surface of the mask to form a sheet of crystalline material. This sheet is then separated and used to form a tandem solar cell while the substrate can be reused to form additional sheets.
摘要:
A method of applying an electrical contact and an anodic reflection coating to an n.sup.+ layer of a direct gap semiconductor device, comprising applying an anodizable metal contact to the n.sup.+ layer and thereafter anodizing the n.sup.+ layer whereby its thickness is reduced and an antireflection layer is formed thereover.