利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

43 条记录 (耗时 0.024 秒)

    Shallow-homojunction solar cells
    4.
    发明授权
    Shallow-homojunction solar cells 失效
    浅同质结太阳能电池

    公开(公告)号：US4227941A

    公开(公告)日：1980-10-14

    申请号：US22405

    申请日：1979-03-21

    申请人： Carl O. Bozler ,  Ralph L. Chapman ,  John C. C. Fan ,  Robert W. McClelland

    发明人： Carl O. Bozler ,  Ralph L. Chapman ,  John C. C. Fan ,  Robert W. McClelland

    IPC分类号： H01L31/0216 ,  H01L31/0693 ,  H01L31/06

    CPC分类号： H01L31/0693 ,  H01L31/02168 ,  Y02E10/544

    摘要： Improvements in shallow-homojunction solar cells based upon a plurality of layers of a direct gap semiconductor material such as GaAs, as well as their fabrication, are disclosed. The shallow-homojunction solar cells have a n.sup.+ /p/p.sup.+ structure in which the n.sup.+ top layer is limited to a thickness which permits significant carrier generation to occur in a lower semiconductor layer. An anodic antireflection coating is applied over the n.sup.+ top layer, and a particularly preferred method for applying the antireflection coating is by anodization. These solar cells can be grown on relatively inexpensive substrates, if desired, such as silicon or germanium.

    摘要翻译： 公开了基于诸如GaAs的直接间隙半导体材料的多层的浅同相结合太阳能电池的改进以及它们的制造。 浅同相结合太阳能电池具有n + / p / p +结构，其中n +顶层被限制为允许在较低半导体层中发生显着的载流子产生的厚度。 在n +顶层上施加阳极抗反射涂层，并且用于施加抗反射涂层的特别优选的方法是通过阳极氧化。 如果需要，这些太阳能电池可以在相对便宜的基底上生长，例如硅或锗。

    Solar cells having ultrathin active layers
    6.
    发明授权
    Solar cells having ultrathin active layers 失效
    具有超薄活性层的太阳能电池

    公开(公告)号：US4376228A

    公开(公告)日：1983-03-08

    申请号：US57874

    申请日：1979-07-16

    申请人： John C. C. Fan ,  Carl O. Bozler

    发明人： John C. C. Fan ,  Carl O. Bozler

    IPC分类号： H01L31/0352 ,  H01L31/052 ,  H01L31/054 ,  H01L31/056 ,  H01L31/075 ,  H01L31/06

    CPC分类号： H01L31/075 ,  H01L31/035281 ,  H01L31/0547 ,  H01L31/056 ,  Y02E10/52 ,  Y02E10/548

    摘要： Improvements in solar cells based upon low cost semiconductors, such as amorphous silicon, are disclosed. The improved solar cells of this invention have ultrathin active semiconductor layers having a thickness between 0.1 t.sub..alpha. and L.sub.m wherein t.sub..alpha. is the solar spectrum absorption length and L.sub.m is the diffusion length for photogenerated minority charge carriers in the active layer. The back surface reflector has a solar spectrum reflectivity of 70% or greater, so that incident energy not absorbed in a direct pass through the active layer is reflected for another pass. The most preferred embodiment of the cells described herein are shaped to have a light-trapping structure so that light makes multiple passes through the thin semiconductor layers.

    摘要翻译： 公开了基于低成本半导体（例如非晶硅）的太阳能电池的改进。 本发明的改进的太阳能电池具有厚度在0.1tα和Lm之间的超薄有源半导体层，其中tα是太阳光谱吸收长度，Lm是有源层中的光生少数电荷载流子的扩散长度。 后表面反射器具有70％或更大的太阳光谱反射率，使得不被直接通过有源层吸收的入射能量被反射另一遍。 本文所述的电池的最优选实施例被成形为具有光捕获结构，使得光使多次穿过薄的半导体层。

    Solar cells having ultrathin active layers
    9.
    发明授权
    Solar cells having ultrathin active layers 失效
    具有超薄活性层的太阳能电池

    公开(公告)号：US4514581A

    公开(公告)日：1985-04-30

    申请号：US440090

    申请日：1982-11-08

    申请人： John C. C. Fan ,  Carl O. Bozler

    发明人： John C. C. Fan ,  Carl O. Bozler

    IPC分类号： H01L31/0352 ,  H01L31/052 ,  H01L31/075 ,  H01L31/06

    CPC分类号： H01L31/075 ,  H01L31/035281 ,  H01L31/0547 ,  H01L31/056 ,  Y02E10/52 ,  Y02E10/548

    摘要： Improvements in solar cells based upon low cost semiconductors, such as amorphous silicon, are disclosed. The improved solar cells of this invention have ultrathin active semiconductor layers having a thickness between 0.1 t.sub..alpha. and L.sub.m wherein t.sub..alpha. is the solar spectrum absorption length and L.sub.m is the diffusion length for photogenerated minority charge carriers in the active layer. The back surface reflector has a solar spectrum reflectivity of 70% or greater, so that incident energy not absorbed in a direct pass through the active layer is reflected for another pass. The most preferred embodiment of the cells described herein are shaped to have a light-trapping structure so that light makes mulitple passes through the thin semiconductor layers.

    摘要翻译： 公开了基于低成本半导体（例如非晶硅）的太阳能电池的改进。 本发明的改进的太阳能电池具有厚度在0.1tα和Lm之间的超薄有源半导体层，其中tα是太阳光谱吸收长度，Lm是有源层中的光生少数电荷载流子的扩散长度。 后表面反射器具有70％或更大的太阳光谱反射率，使得不被直接通过有源层吸收的入射能量被反射另一遍。 本文所述的电池的最优选实施方案被成形为具有光捕获结构，使得光使多孔通过薄半导体层。