公开(公告)号：US20050077833A1

公开(公告)日：2005-04-14

申请号：US10962467

申请日：2004-10-13

Applicant: In-kyeong Yoo ,  Chang-wook Moon ,  Chang-hoon Choi

Inventor： In-kyeong Yoo ,  Chang-wook Moon ,  Chang-hoon Choi

IPC: G03F7/20 ,  H01J1/312 ,  H01J9/02 ,  H01J37/073 ,  H01J37/305 ,  H01L21/027 ,  H01J7/24 ,  H05B31/26

CPC classification number: H01J37/073 ,  H01J2237/31779

Abstract: An emitter for an electron-beam projection lithography system includes a photoconductor substrate, an insulating layer formed on a front surface of the photoconductor substrate, a gate electrode layer formed on the insulating layer, and a base electrode layer formed on a rear surface of the photoconductor substrate and formed of a transparent conductive material. In operation of the emitter, a voltage is applied between the base electrode and the gate electrode layer, light is projected onto a portion of the photoconductor substrate to convert the portion of the photoconductor substrate into a conductor such that electrons are emitted only from the partial portion where the light is projected. Since the emitter can partially emit electrons, partial correcting, patterning or repairing of a subject electron-resist can be realized.

Abstract translation: 用于电子束投影光刻系统的发射器包括：感光体基板，形成于感光体基板前表面的绝缘层，形成在绝缘层上的栅极电极层，以及形成在绝缘层的背面上的基极层 感光体基板并由透明导电材料形成。 在发射极的工作中，在基极和栅极电极层之间施加电压，光被投射到光电导体基底的一部分上，以将感光体基底的一部分转换为导体，使电子仅从部分 投射光的部分。 由于发射体可以部分地发射电子，所以可以实现对象电子抗蚀剂的部分校正，图案化或修复。

公开(公告)号：US20060181220A1

公开(公告)日：2006-08-17

申请号：US11254793

申请日：2005-10-21

Applicant: Chang-wook Moon ,  In-kyeong Yoo

Inventor： Chang-wook Moon ,  In-kyeong Yoo

IPC: H01L21/00 ,  H01J7/24

CPC classification number: H01J9/025

Abstract: A method and apparatus for fabricating an emitter by colliding an arc with the surface of a wafer inside a vacuum chamber are provided. The apparatus includes: a vacuum chamber in which a wafer is inserted; a magnetic field generating unit for generating a uniform magnetic field inside the vacuum chamber; an electric field generating unit for forming an electric field parallel to the magnetic field inside the vacuum chamber; and a master emitter for emitting electrons towards the wafer. The electrons emitted from the master emitter move along the magnetic field and the electric field. The arc is generated when the electric field or the driving voltage surpasses a threshold by controlling the strength of the electric field and the driving voltage of the master emitter. Thus, the surface of the wafer is instantaneously melted and solidified by the arc, thereby forming the emitter with a sharp tip on the surface of the wafer.

Abstract translation: 提供了一种用于通过使电弧与真空室内的晶片的表面碰撞来制造发射器的方法和装置。 该装置包括：其中插入有晶片的真空室; 磁场产生单元，用于在真空室内产生均匀的磁场; 电场产生单元，用于形成与真空室内的磁场平行的电场; 以及用于向晶片发射电子的主发射器。 从主发射器发射的电子沿着磁场和电场移动。 当电场或驱动电压通过控制电场的强度和主发射极的驱动电压而超过阈值时，产生电弧。 因此，晶片的表面被电弧瞬间熔化和凝固，从而在晶片的表面上形成具有尖锐尖端的发射极。

公开(公告)号：US06953946B2

公开(公告)日：2005-10-11

申请号：US10674459

申请日：2003-10-01

Applicant: In-kyeong Yoo ,  Chang-wook Moon ,  Soo-hwan Jeong ,  Dong-wook Kim

Inventor： In-kyeong Yoo ,  Chang-wook Moon ,  Soo-hwan Jeong ,  Dong-wook Kim

IPC: G03F7/20 ,  H01J1/312 ,  H01J9/02 ,  H01J37/06 ,  H01J37/073 ,  H01J37/305 ,  H01L21/027 ,  H01L29/06 ,  H01L29/12 ,  H01L29/82 ,  H01L43/00

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J9/022 ,  H01J9/027 ,  H01J2237/31774 ,  H01J2237/31783

Abstract: An emitter for an electron-beam projection lithography (EPL) system and a manufacturing method therefor are provided. The electron-beam emitter includes a substrate, an insulating layer overlying the substrate, and a gate electrode including a base layer formed on top of the insulating layer to a uniform thickness and an electron-beam blocking layer formed on the base layer in a predetermined pattern. The manufacturing method includes steps of: preparing a substrate; forming an insulating layer on the substrate; forming a base layer of a gate electrode by depositing a conductive metal on the insulating layer to a predetermined thickness; forming an electron-beam blocking layer of the gate electrode by depositing a metal capable of anodizing on the base layer to a predetermined thickness; and patterning the electron-beam blocking layer in a predetermined pattern by anodizing. The emitter provides a uniform electric field within the insulating layer and simplify the manufacturing method therefor.

Abstract translation: 提供了一种用于电子束投影光刻（EPL）系统的发射器及其制造方法。 电子束发射器包括衬底，覆盖衬底的绝缘层，以及包括形成在绝缘层顶部上的基底层至均匀厚度的栅极电极和以预定的方式形成在基底层上的电子束阻挡层 模式。 该制造方法包括以下步骤：制备衬底; 在所述基板上形成绝缘层; 通过在所述绝缘层上沉积导电金属至预定厚度来形成栅电极的基层; 通过在基底层上沉积能够阳极氧化的金属至预定的厚度来形成栅电极的电子束阻挡层; 并通过阳极氧化将预定图案中的电子束阻挡层图案化。 发射极在绝缘层内提供均匀的电场，并简化其制造方法。

公开(公告)号：US06870173B2

公开(公告)日：2005-03-22

申请号：US10792849

申请日：2004-03-05

Applicant: Chang-wook Moon ,  In-kyeong Yoo ,  Dong-wook Kim

Inventor： Chang-wook Moon ,  In-kyeong Yoo ,  Dong-wook Kim

IPC: G21K1/093 ,  G03F7/20 ,  G03F7/207 ,  G21K5/04 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027

CPC classification number: H01J37/3175 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/0216 ,  H01J2237/15

Abstract: An electron-beam focusing apparatus for controlling a path of electron beams emitted from an electron-beam emitter in an electron-beam projection lithography (EPL) system includes top and bottom magnets for creating a magnetic field within a vacuum chamber, the top and bottom magnets disposed above and below the vacuum chamber into which a wafer is loaded, respectively; upper and lower pole pieces magnetically contacting the top and bottom magnets, respectively, the upper and lower pole pieces penetrating a top wall and a bottom wall of the vacuum chamber, respectively; and upper and lower projections having a circular shape, extending outwardly from facing surfaces of the upper and lower pole pieces, respectively.

Abstract translation: 用于控制电子束投影光刻（EPL）系统中从电子束发射器发射的电子束的路径的电子束聚焦装置包括用于在真空室内产生磁场的顶部和底部磁体，顶部和底部 分别设置在其上装载有晶片的真空室的上方和下方的磁体; 分别与顶部和底部磁体磁接触的上部和下部磁极件，上部和下部磁极片分别穿透真空室的顶壁和底壁; 以及分别具有圆形形状的上下突起，从上下极片的相对表面向外延伸。

公开(公告)号：US06815681B2

公开(公告)日：2004-11-09

申请号：US10465600

申请日：2003-06-20

Applicant: Dong-wook Kim ,  In-kyeong Yoo ,  Chang-wook Moon ,  In-sook Kim

Inventor： Dong-wook Kim ,  In-kyeong Yoo ,  Chang-wook Moon ,  In-sook Kim

IPC: H01J3700

CPC classification number: H01J37/3175 ,  H01J2237/31781

Abstract: An electron beam lithography apparatus, which uses a patterned emitter, includes a pyroelectric plate emitter that emits electrons using a patterned metal thin layer formed on the pyroelectric plate as a mask. When the emitter is heated, electrons are emitted from portions of the emitter covered with a patterned dielectric layer, and not from portions of the emitter covered with a patterned metal thin layer, and a pattern of the emitter is thereby projected onto a substrate. To prevent dispersion of emitted electron beams, the electron beams may be controlled by a permanent magnet, an electro-magnet, or a deflector unit. A one-to-one or x-to-one projection of a desired pattern on the substrate is thereby obtained.

Abstract translation: 使用图案化发射器的电子束光刻设备包括使用形成在热电板上的图案化金属薄层作为掩模发射电子的热电板发射器。 当发射极被加热时，电子从被图案化电介质层覆盖的发射体的部分发射，而不是由图案化的金属薄层覆盖的发射体的部分发射，并且因此将发射极的图案投影到衬底上。 为了防止发射的电子束的分散，电子束可以由永磁体，电磁体或偏转器单元来控制。 从而获得在衬底上所需图案的一对一或一对一投影。

公开(公告)号：US06784438B2

公开(公告)日：2004-08-31

申请号：US10688953

申请日：2003-10-21

Applicant: In-kyeong Yoo ,  Chang-wook Moon ,  Dong-wook Kim

Inventor： In-kyeong Yoo ,  Chang-wook Moon ,  Dong-wook Kim

IPC: H01J37073

CPC classification number: B82Y30/00 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3175 ,  H01J2237/06358 ,  H01J2237/31781

Abstract: An electron projection lithography apparatus using secondary electrons includes a secondary electron emitter which is spaced apart from a substrate holder by a first predetermined interval and has a patterned mask formed on a surface thereof to face the substrate holder, a primary electron emitter which is spaced apart by a second predetermined interval from the secondary electron emitter in a direction opposite to the substrate holder and emits primary electrons to the secondary electron emitter, a second power supply which applies a second predetermined voltage between the substrate holder and the secondary electron emitter, a first power supply which applies a first predetermined voltage between the secondary electron emitter and the primary electron emitter, and a magnetic field generator which controls a path of secondary electrons emitted from the secondary electron emitter.

公开(公告)号：US20070200158A1

公开(公告)日：2007-08-30

申请号：US11655193

申请日：2007-01-19

Applicant: Stefanovich Genrikh ,  Choong-rae Cho ,  In-kyeong Yoo ,  Eun-hong Lee ,  Sung-Il Cho ,  Chang-wook Moon

Inventor： Stefanovich Genrikh ,  Choong-rae Cho ,  In-kyeong Yoo ,  Eun-hong Lee ,  Sung-Il Cho ,  Chang-wook Moon

IPC: H01L29/94

CPC classification number: H01L27/115 ,  G11C2213/56 ,  H01L27/2436 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146

Abstract: An electrode structure having at least two oxide layers that more reliably switch and operate without the use of additional devices and a non-volatile memory device having the same are provided. The electrode structure may include a lower electrode, a first oxide layer formed on the lower electrode, a second oxide layer formed on the first oxide layer and an upper electrode formed on the second oxide layer wherein at least one of the first and second oxide layers may be formed of a resistance-varying material. The first oxide layer may be formed of an oxide having a variable oxidation state.

Abstract translation: 提供具有至少两个氧化物层的电极结构，其更可靠地在不使用附加装置的情况下切换和操作，以及具有该氧化物层的非易失性存储装置。 电极结构可以包括下电极，形成在下电极上的第一氧化物层，形成在第一氧化物层上的第二氧化物层和形成在第二氧化物层上的上电极，其中第一氧化物层和第二氧化物层中的至少一个 可以由电阻变化材料形成。 第一氧化物层可以由具有可变氧化态的氧化物形成。

公开(公告)号：US20070126043A1

公开(公告)日：2007-06-07

申请号：US11606889

申请日：2006-12-01

Applicant: Chang-wook Moon ,  Sang-mock Lee ,  In-kyeong Yoo ,  Seung-woon Lee ,  El Bourim ,  Eun-hong Lee ,  Choong-rae Cho

Inventor： Chang-wook Moon ,  Sang-mock Lee ,  In-kyeong Yoo ,  Seung-woon Lee ,  El Bourim ,  Eun-hong Lee ,  Choong-rae Cho

IPC: H01L29/94

CPC classification number: H01L27/115 ,  B82Y10/00 ,  G11C13/0007 ,  G11C2213/15 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/35 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146

Abstract: A storage node having a metal-insulator-metal structure, a non-volatile memory device including a storage node having a metal-insulator-metal (MIM) structure and a method of operating the same are provided. The memory device may include a switching element and a storage node connected to the switching element. The storage node may include a first metal layer, a first insulating layer and a second metal layer, sequentially stacked, and a nano-structure layer. The storage node may further include a second insulating layer and a third metal layer. The nano-structure layer, which is used as a carbon nano-structure layer, may include at least one fullerene layer.

Abstract translation: 提供一种具有金属 - 绝缘体 - 金属结构的存储节点，包括具有金属 - 绝缘体 - 金属（MIM）结构的存储节点的非易失性存储器件及其操作方法。 存储器件可以包括连接到开关元件的开关元件和存储节点。 存储节点可以包括依次层叠的第一金属层，第一绝缘层和第二金属层，以及纳米结构层。 存储节点还可以包括第二绝缘层和第三金属层。 用作碳纳米结构层的纳米结构层可以包括至少一个富勒烯层。

公开(公告)号：US07091054B2

公开(公告)日：2006-08-15

申请号：US11057469

申请日：2005-02-15

Applicant: In-kyeong Yoo ,  Chang-wook Moon ,  Soo-hwan Jeong ,  Dong-wook Kim

Inventor： In-kyeong Yoo ,  Chang-wook Moon ,  Soo-hwan Jeong ,  Dong-wook Kim

IPC: H01L21/00

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J9/022 ,  H01J9/027 ,  H01J2237/31774 ,  H01J2237/31783

Abstract: An emitter for an electron-beam projection lithography (EPL) system and a manufacturing method therefor are provided. The electron-beam emitter includes a substrate, an insulating layer overlying the substrate, and a gate electrode including a base layer formed on top of the insulating layer to a uniform thickness and an electron-beam blocking layer formed on the base layer in a predetermined pattern. The manufacturing method includes steps of: preparing a substrate; forming an insulating layer on the substrate; forming a base layer of a gate electrode by depositing a conductive metal on the insulating layer to a predetermined thickness; forming an electron-beam blocking layer of the gate electrode by depositing a metal capable of anodizing on the base layer to a predetermined thickness; and patterning the electron-beam blocking layer in a predetermined pattern by anodizing. The emitter provides a uniform electric field within the insulating layer and simplify the manufacturing method therefor.

Abstract translation: 提供了一种用于电子束投影光刻（EPL）系统的发射器及其制造方法。 电子束发射器包括衬底，覆盖衬底的绝缘层，以及包括形成在绝缘层顶部上的基底层至均匀厚度的栅极电极和以预定的方式形成在基底层上的电子束阻挡层 模式。 该制造方法包括以下步骤：制备衬底; 在所述基板上形成绝缘层; 通过在所述绝缘层上沉积导电金属至预定厚度来形成栅电极的基层; 通过在基底层上沉积能够阳极氧化的金属至预定的厚度来形成栅电极的电子束阻挡层; 并通过阳极氧化将预定图案中的电子束阻挡层图案化。 发射极在绝缘层内提供均匀的电场，并简化其制造方法。

公开(公告)号：US07859035B2

公开(公告)日：2010-12-28

申请号：US11606889

申请日：2006-12-01

Applicant: Chang-wook Moon ,  Sang-mock Lee ,  In-kyeong Yoo ,  Seung-woon Lee ,  El Mostafa Bourim ,  Eun-hong Lee ,  Choong-rae Cho

Inventor： Chang-wook Moon ,  Sang-mock Lee ,  In-kyeong Yoo ,  Seung-woon Lee ,  El Mostafa Bourim ,  Eun-hong Lee ,  Choong-rae Cho

IPC: H01L27/108 ,  H01L29/94

CPC classification number: H01L27/115 ,  B82Y10/00 ,  G11C13/0007 ,  G11C2213/15 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/35 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146

Abstract: A storage node having a metal-insulator-metal structure, a non-volatile memory device including a storage node having a metal-insulator-metal (MIM) structure and a method of operating the same are provided. The memory device may include a switching element and a storage node connected to the switching element. The storage node may include a first metal layer, a first insulating layer and a second metal layer, sequentially stacked, and a nano-structure layer. The storage node may further include a second insulating layer and a third metal layer. The nano-structure layer, which is used as a carbon nano-structure layer, may include at least one fullerene layer.

Abstract translation: 提供一种具有金属 - 绝缘体 - 金属结构的存储节点，包括具有金属 - 绝缘体 - 金属（MIM）结构的存储节点的非易失性存储器件及其操作方法。 存储器件可以包括连接到开关元件的开关元件和存储节点。 存储节点可以包括依次层叠的第一金属层，第一绝缘层和第二金属层，以及纳米结构层。 存储节点还可以包括第二绝缘层和第三金属层。 用作碳纳米结构层的纳米结构层可以包括至少一个富勒烯层。