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公开(公告)号：US08405225B2
公开(公告)日：2013-03-26
申请号：US13437533
申请日：2012-04-02
申请人： Chen-Hua Yu , Wen-Chih Chiou , Weng-Jin Wu , Hung-Jung Tu , Ku-Feng Yang
发明人： Chen-Hua Yu , Wen-Chih Chiou , Weng-Jin Wu , Hung-Jung Tu , Ku-Feng Yang
CPC分类号： H01L21/8221 , H01L21/76898 , H01L24/16 , H01L25/0652 , H01L25/0657 , H01L25/50 , H01L27/0688 , H01L2224/05001 , H01L2224/05009 , H01L2224/05124 , H01L2224/05139 , H01L2224/05147 , H01L2224/05157 , H01L2224/05166 , H01L2224/05181 , H01L2224/05184 , H01L2224/05186 , H01L2224/05568 , H01L2224/05573 , H01L2224/05609 , H01L2224/05616 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05684 , H01L2224/13099 , H01L2225/06513 , H01L2225/06541 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/14 , H01L2924/19041 , Y10S148/164 , H01L2924/00014 , H01L2924/0105 , H01L2924/01079 , H01L2924/013
摘要： A semiconductor structure includes a first die comprising a first substrate and a first bonding pad over the first substrate, a second die having a first surface and a second surface opposite the first surface, wherein the second die is stacked on the first die and a protection layer having a vertical portion on a sidewall of the second die, and a horizontal portion extending over the first die.
摘要翻译： 半导体结构包括第一裸片，其包括第一衬底和第一衬底上的第一焊盘，第二裸片，具有与第一表面相对的第一表面和第二表面，其中第二裸片堆叠在第一裸片上， 层，其具有在第二管芯的侧壁上的垂直部分，以及在第一管芯上延伸的水平部分。
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公开(公告)号：US08148826B2
公开(公告)日：2012-04-03
申请号：US13273845
申请日：2011-10-14
申请人： Chen-Hua Yu , Wen-Chih Chiou , Weng-Jin Wu , Hung-Jung Tu , Ku-Feng Yang
发明人： Chen-Hua Yu , Wen-Chih Chiou , Weng-Jin Wu , Hung-Jung Tu , Ku-Feng Yang
CPC分类号： H01L21/8221 , H01L21/76898 , H01L24/16 , H01L25/0652 , H01L25/0657 , H01L25/50 , H01L27/0688 , H01L2224/05001 , H01L2224/05009 , H01L2224/05124 , H01L2224/05139 , H01L2224/05147 , H01L2224/05157 , H01L2224/05166 , H01L2224/05181 , H01L2224/05184 , H01L2224/05186 , H01L2224/05568 , H01L2224/05573 , H01L2224/05609 , H01L2224/05616 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05684 , H01L2224/13099 , H01L2225/06513 , H01L2225/06541 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/14 , H01L2924/19041 , Y10S148/164 , H01L2924/00014 , H01L2924/0105 , H01L2924/01079 , H01L2924/013
摘要： A semiconductor structure includes a first die comprising a first substrate and a first bonding pad over the first substrate, a second die having a first surface and a second surface opposite the first surface, wherein the second die is stacked on the first die and a protection layer having a vertical portion on a sidewall of the second die, and a horizontal portion extending over the first die.
摘要翻译： 半导体结构包括第一裸片，其包括第一衬底和第一衬底上的第一焊盘，第二裸片，具有与第一表面相对的第一表面和第二表面，其中第二裸片堆叠在第一裸片上， 层，其具有在第二管芯的侧壁上的垂直部分，以及在第一管芯上延伸的水平部分。
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公开(公告)号：US08053277B2
公开(公告)日：2011-11-08
申请号：US12878112
申请日：2010-09-09
申请人： Chen-Hua Yu , Wen-Chih Chiou , Weng-Jin Wu , Hung-Jung Tu , Ku-Feng Yang
发明人： Chen-Hua Yu , Wen-Chih Chiou , Weng-Jin Wu , Hung-Jung Tu , Ku-Feng Yang
IPC分类号： H01L21/50
CPC分类号： H01L21/8221 , H01L21/76898 , H01L24/16 , H01L25/0652 , H01L25/0657 , H01L25/50 , H01L27/0688 , H01L2224/05001 , H01L2224/05009 , H01L2224/05124 , H01L2224/05139 , H01L2224/05147 , H01L2224/05157 , H01L2224/05166 , H01L2224/05181 , H01L2224/05184 , H01L2224/05186 , H01L2224/05568 , H01L2224/05573 , H01L2224/05609 , H01L2224/05616 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05684 , H01L2224/13099 , H01L2225/06513 , H01L2225/06541 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/14 , H01L2924/19041 , Y10S148/164 , H01L2924/00014 , H01L2924/0105 , H01L2924/01079 , H01L2924/013
摘要： A semiconductor structure includes a first die comprising a first substrate and a first bonding pad over the first substrate, a second die having a first surface and a second surface opposite the first surface, wherein the second die is stacked on the first die and a protection layer having a vertical portion on a sidewall of the second die, and a horizontal portion extending over the first die.
摘要翻译： 半导体结构包括第一裸片，其包括第一衬底和第一衬底上的第一焊盘，第二裸片，具有与第一表面相对的第一表面和第二表面，其中第二裸片堆叠在第一裸片上， 层，其具有在第二管芯的侧壁上的垂直部分，以及在第一管芯上延伸的水平部分。
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公开(公告)号：US20100330743A1
公开(公告)日：2010-12-30
申请号：US12878112
申请日：2010-09-09
申请人： Chen-Hua Yu , Wen-Chih Chiou , Weng-Jin Wu , Hung-Jung Tu , Ku-Feng Yang
发明人： Chen-Hua Yu , Wen-Chih Chiou , Weng-Jin Wu , Hung-Jung Tu , Ku-Feng Yang
IPC分类号： H01L21/50
CPC分类号： H01L21/8221 , H01L21/76898 , H01L24/16 , H01L25/0652 , H01L25/0657 , H01L25/50 , H01L27/0688 , H01L2224/05001 , H01L2224/05009 , H01L2224/05124 , H01L2224/05139 , H01L2224/05147 , H01L2224/05157 , H01L2224/05166 , H01L2224/05181 , H01L2224/05184 , H01L2224/05186 , H01L2224/05568 , H01L2224/05573 , H01L2224/05609 , H01L2224/05616 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05684 , H01L2224/13099 , H01L2225/06513 , H01L2225/06541 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/14 , H01L2924/19041 , Y10S148/164 , H01L2924/00014 , H01L2924/0105 , H01L2924/01079 , H01L2924/013
摘要： A semiconductor structure includes a first die comprising a first substrate and a first bonding pad over the first substrate, a second die having a first surface and a second surface opposite the first surface, wherein the second die is stacked on the first die and a protection layer having a vertical portion on a sidewall of the second die, and a horizontal portion extending over the first die.
摘要翻译： 半导体结构包括第一裸片，其包括第一衬底和第一衬底上的第一焊盘，第二裸片，具有与第一表面相对的第一表面和第二表面，其中第二裸片堆叠在第一裸片上， 层，其具有在第二管芯的侧壁上的垂直部分，以及在第一管芯上延伸的水平部分。
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公开(公告)号：US20120032348A1
公开(公告)日：2012-02-09
申请号：US13273845
申请日：2011-10-14
申请人： Chen-Hua Yu , Wen-Chih Chiou , Weng-Jin Wu , Hung-Jung Tu , Ku-Feng Yang
发明人： Chen-Hua Yu , Wen-Chih Chiou , Weng-Jin Wu , Hung-Jung Tu , Ku-Feng Yang
IPC分类号： H01L23/52
CPC分类号： H01L21/8221 , H01L21/76898 , H01L24/16 , H01L25/0652 , H01L25/0657 , H01L25/50 , H01L27/0688 , H01L2224/05001 , H01L2224/05009 , H01L2224/05124 , H01L2224/05139 , H01L2224/05147 , H01L2224/05157 , H01L2224/05166 , H01L2224/05181 , H01L2224/05184 , H01L2224/05186 , H01L2224/05568 , H01L2224/05573 , H01L2224/05609 , H01L2224/05616 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05684 , H01L2224/13099 , H01L2225/06513 , H01L2225/06541 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/14 , H01L2924/19041 , Y10S148/164 , H01L2924/00014 , H01L2924/0105 , H01L2924/01079 , H01L2924/013
摘要： A semiconductor structure includes a first die comprising a first substrate and a first bonding pad over the first substrate, a second die having a first surface and a second surface opposite the first surface, wherein the second die is stacked on the first die and a protection layer having a vertical portion on a sidewall of the second die, and a horizontal portion extending over the first die.
摘要翻译： 半导体结构包括第一裸片，其包括第一衬底和第一衬底上的第一焊盘，第二裸片，具有与第一表面相对的第一表面和第二表面，其中第二裸片堆叠在第一裸片上， 层，其具有在第二管芯的侧壁上的垂直部分，以及在第一管芯上延伸的水平部分。
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公开(公告)号：US20080142990A1
公开(公告)日：2008-06-19
申请号：US11641324
申请日：2006-12-19
申请人： Chen-Hua Yu , Wen-Chih Chiou , Weng-Jin Wu , Hung-Jung Tu , Ku-Feng Yang
发明人： Chen-Hua Yu , Wen-Chih Chiou , Weng-Jin Wu , Hung-Jung Tu , Ku-Feng Yang
IPC分类号： H01L23/538 , H01L21/56
CPC分类号： H01L21/8221 , H01L21/76898 , H01L24/16 , H01L25/0652 , H01L25/0657 , H01L25/50 , H01L27/0688 , H01L2224/05001 , H01L2224/05009 , H01L2224/05124 , H01L2224/05139 , H01L2224/05147 , H01L2224/05157 , H01L2224/05166 , H01L2224/05181 , H01L2224/05184 , H01L2224/05186 , H01L2224/05568 , H01L2224/05573 , H01L2224/05609 , H01L2224/05616 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05684 , H01L2224/13099 , H01L2225/06513 , H01L2225/06541 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/14 , H01L2924/19041 , Y10S148/164 , H01L2924/00014 , H01L2924/0105 , H01L2924/01079 , H01L2924/013
摘要： A semiconductor structure includes a first die comprising a first substrate and a first bonding pad over the first substrate, a second die having a first surface and a second surface opposite the first surface, wherein the second die is stacked on the first die and a protection layer having a vertical portion on a sidewall of the second die, and a horizontal portion extending over the first die.
摘要翻译： 半导体结构包括第一裸片，其包括第一衬底和第一衬底上的第一焊盘，第二裸片，具有与第一表面相对的第一表面和第二表面，其中第二裸片堆叠在第一裸片上， 层，其具有在第二管芯的侧壁上的垂直部分，以及在第一管芯上延伸的水平部分。
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公开(公告)号：US20120187576A1
公开(公告)日：2012-07-26
申请号：US13437533
申请日：2012-04-02
申请人： Chen-Hua Yu , Wen-Chih Chiou , Weng-Jin Wu , Hung-Jung Tu , Ku-Feng Yang
发明人： Chen-Hua Yu , Wen-Chih Chiou , Weng-Jin Wu , Hung-Jung Tu , Ku-Feng Yang
IPC分类号： H01L23/538 , H01L23/488
CPC分类号： H01L21/8221 , H01L21/76898 , H01L24/16 , H01L25/0652 , H01L25/0657 , H01L25/50 , H01L27/0688 , H01L2224/05001 , H01L2224/05009 , H01L2224/05124 , H01L2224/05139 , H01L2224/05147 , H01L2224/05157 , H01L2224/05166 , H01L2224/05181 , H01L2224/05184 , H01L2224/05186 , H01L2224/05568 , H01L2224/05573 , H01L2224/05609 , H01L2224/05616 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05684 , H01L2224/13099 , H01L2225/06513 , H01L2225/06541 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/14 , H01L2924/19041 , Y10S148/164 , H01L2924/00014 , H01L2924/0105 , H01L2924/01079 , H01L2924/013
摘要： A semiconductor structure includes a first die comprising a first substrate and a first bonding pad over the first substrate, a second die having a first surface and a second surface opposite the first surface, wherein the second die is stacked on the first die and a protection layer having a vertical portion on a sidewall of the second die, and a horizontal portion extending over the first die.
摘要翻译： 半导体结构包括第一裸片，其包括第一衬底和第一衬底上的第一焊盘，第二裸片，具有与第一表面相对的第一表面和第二表面，其中第二裸片堆叠在第一裸片上， 层，其具有在第二管芯的侧壁上的垂直部分，以及在第一管芯上延伸的水平部分。
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公开(公告)号：US07466028B1
公开(公告)日：2008-12-16
申请号：US11873037
申请日：2007-10-16
申请人： Chen-Hua Yu , Wen-Chih Chiou , Hung-Jung Tu , Weng-Jin Wu
发明人： Chen-Hua Yu , Wen-Chih Chiou , Hung-Jung Tu , Weng-Jin Wu
IPC分类号： H01L27/10 , H01L29/73 , H01L29/74 , H01L23/02 , H01L23/04 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L27/0688 , H01L23/481 , H01L25/0657 , H01L2223/6616 , H01L2225/06513 , H01L2225/06541 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device structure for a three-dimensional integrated circuit is provided. The semiconductor device structure includes: a substrate having a first surface and a second surface; a via defined in the substrate and extending from the first surface to the second surface; and a first plurality of contact structures on the first surface contacting the via. A cross section of each of the first plurality of contact structures parallel to the first surface has a first side and a second side, and a ratio of the longer side to the shorter side of the first side and the second side is more than about 2:1.
摘要翻译： 提供了一种用于三维集成电路的半导体器件结构。 半导体器件结构包括：具有第一表面和第二表面的衬底; 通孔，其限定在所述基板中并且从所述第一表面延伸到所述第二表面; 以及在所述第一表面上接触所述通孔的第一多个接触结构。 平行于第一表面的第一多个接触结构中的每一个的横截面具有第一侧和第二侧，并且第一侧和第二侧的长边与短边的比例大于约2 ：1。
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公开(公告)号：US07812459B2
公开(公告)日：2010-10-12
申请号：US11641324
申请日：2006-12-19
申请人： Chen-Hua Yu , Wen-Chih Chiou , Weng-Jin Wu , Hung-Jung Tu , Ku-Feng Yang
发明人： Chen-Hua Yu , Wen-Chih Chiou , Weng-Jin Wu , Hung-Jung Tu , Ku-Feng Yang
IPC分类号： H01L23/48
CPC分类号： H01L21/8221 , H01L21/76898 , H01L24/16 , H01L25/0652 , H01L25/0657 , H01L25/50 , H01L27/0688 , H01L2224/05001 , H01L2224/05009 , H01L2224/05124 , H01L2224/05139 , H01L2224/05147 , H01L2224/05157 , H01L2224/05166 , H01L2224/05181 , H01L2224/05184 , H01L2224/05186 , H01L2224/05568 , H01L2224/05573 , H01L2224/05609 , H01L2224/05616 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05684 , H01L2224/13099 , H01L2225/06513 , H01L2225/06541 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/14 , H01L2924/19041 , Y10S148/164 , H01L2924/00014 , H01L2924/0105 , H01L2924/01079 , H01L2924/013
摘要： A semiconductor structure includes a first die comprising a first substrate and a first bonding pad over the first substrate, a second die having a first surface and a second surface opposite the first surface, wherein the second die is stacked on the first die and a protection layer having a vertical portion on a sidewall of the second die, and a horizontal portion extending over the first die.
摘要翻译： 半导体结构包括第一裸片，其包括第一衬底和第一衬底上的第一焊盘，第二裸片，具有与第一表面相对的第一表面和第二表面，其中第二裸片堆叠在第一裸片上， 层，其具有在第二管芯的侧壁上的垂直部分，以及在第一管芯上延伸的水平部分。
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公开(公告)号：US20110186967A1
公开(公告)日：2011-08-04
申请号：US13084204
申请日：2011-04-11
申请人： Weng-Jin Wu , Hung-Jung Tu , Ku-Feng Yang , Jung-Chih Hu , Wen-Chih Chiou
发明人： Weng-Jin Wu , Hung-Jung Tu , Ku-Feng Yang , Jung-Chih Hu , Wen-Chih Chiou
IPC分类号： H01L23/544 , H01L23/48
CPC分类号： H01L23/3157 , H01L25/0657 , H01L25/50 , H01L2224/0554 , H01L2224/0557 , H01L2224/05571 , H01L2224/05573 , H01L2224/16 , H01L2225/06513 , H01L2924/00014 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A method of forming integrated circuits includes laminating a patterned film including an opening onto a wafer, wherein a bottom die in the wafer is exposed through the opening. A top die is placed into the opening. The top die fits into the opening with substantially no gap between the patterned film and the top die. The top die is then bonded onto the bottom die, followed by curing the patterned film.
摘要翻译： 一种形成集成电路的方法包括将包括开口的图案化膜层压到晶片上，其中晶片中的底模裸露通过开口。 将顶模放入开口。 顶部模具装配到开口中，在图案化膜和顶模之间基本上没有间隙。 然后将顶模结合到底模上，随后固化图案化膜。
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