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公开(公告)号：US08470402B2
公开(公告)日：2013-06-25
申请号：US13009958
申请日：2011-01-20
IPC分类号： C23C16/40
CPC分类号： H01L21/02205 , C07F7/00 , C07F7/003 , C07F17/00 , C23C16/18 , C23C16/308 , C23C16/34 , C23C16/40 , C23C16/403 , C23C16/405 , C23C16/407 , C23C16/45553 , H01L21/02148 , H01L21/02159 , H01L21/02178 , H01L21/02181 , H01L21/02189 , H01L21/02192 , H01L21/02194 , H01L21/02271 , H01L21/0228 , H01L21/3141 , H01L21/31641 , H01L21/31645
摘要： Methods of depositing a metal containing dielectric film on a substrate are disclosed. The metal containing dielectric film has the formula (M11-a M2a) Ob Nc, wherein 0≦a
摘要翻译： 公开了在基片上沉积含金属介电膜的方法。 含金属的介电膜具有式（M11-a M2a）Ob Nc，其中0≤a<1,0
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2.发明申请公开(公告)号：US20090203222A1
公开(公告)日：2009-08-13
申请号：US12303169
申请日：2007-03-16
CPC分类号： H01L21/02205 , C07F7/00 , C07F7/003 , C07F17/00 , C23C16/18 , C23C16/308 , C23C16/34 , C23C16/40 , C23C16/403 , C23C16/405 , C23C16/407 , C23C16/45553 , H01L21/02148 , H01L21/02159 , H01L21/02178 , H01L21/02181 , H01L21/02189 , H01L21/02192 , H01L21/02194 , H01L21/02271 , H01L21/0228 , H01L21/3141 , H01L21/31641 , H01L21/31645
摘要： Method of deposition on a substrate, of a metal containing dielectric film comprising a compound of the formula (I): (M11-aM2a)ObNc, (I) wherein 0≦a
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3.发明授权Method for forming a titanium-containing layer on a substrate using an atomic layer deposition (ALD) process 有权使用原子层沉积（ALD）工艺在衬底上形成含钛层的方法公开(公告)号：US08853075B2
公开(公告)日：2014-10-07
申请号：US12920026
申请日：2009-02-13
申请人： Satoko Gatineau , Christian Dussarrat , Christophe Lachaud , Nicolas Blasco , Audrey Pinchart , Ziyun Wang , Jean-Marc Girard , Andreas Zauner
发明人： Satoko Gatineau , Christian Dussarrat , Christophe Lachaud , Nicolas Blasco , Audrey Pinchart , Ziyun Wang , Jean-Marc Girard , Andreas Zauner
IPC分类号： H01L21/4763 , H01J31/12 , H01J29/86
CPC分类号： H01J29/86 , C07F17/00 , C23C16/405 , C23C16/409 , C23C16/45553 , H01J31/127 , H01J2201/30469
摘要： Methods of forming titanium-containing layers on substrates are disclosed. In the disclosed methods, the vapor of a precursor compound having the formula Ti(Me5Cp)(OR)3, wherein R is selected from methyl, ethyl, or isopropyl is provided. The vapor is reacted with the substrate according to an atomic layer deposition process to form a titanium-containing complex on the surface of the substrate.
摘要翻译： 公开了在基底上形成含钛层的方法。 在所公开的方法中，提供了具有式Ti（Me 5 C p）（OR）3的前体化合物的蒸气，其中R选自甲基，乙基或异丙基。 根据原子层沉积工艺使蒸气与基底反应，以在基底表面上形成含钛复合物。
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4.发明授权Method of forming dielectric films, new precursors and their use in semiconductor manufacturing 有权形成介电膜，新前体及其在半导体制造中的应用方法公开(公告)号：US08668957B2
公开(公告)日：2014-03-11
申请号：US12303169
申请日：2007-03-16
IPC分类号： C23C16/40
CPC分类号： H01L21/02205 , C07F7/00 , C07F7/003 , C07F17/00 , C23C16/18 , C23C16/308 , C23C16/34 , C23C16/40 , C23C16/403 , C23C16/405 , C23C16/407 , C23C16/45553 , H01L21/02148 , H01L21/02159 , H01L21/02178 , H01L21/02181 , H01L21/02189 , H01L21/02192 , H01L21/02194 , H01L21/02271 , H01L21/0228 , H01L21/3141 , H01L21/31641 , H01L21/31645
摘要： Method of deposition on a substrate, of a metal containing dielectric film comprising a compound of the formula (I): (M11-aM2a)ObNc, (I) wherein 0≦a
摘要翻译： 包含式（I）化合物的含金属介电膜的基片沉积方法：（M11-aM2a）ObNc，（Ⅰ）其中0≤a≤1,0
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5.发明申请METHOD FOR FORMING A TITANIUM-CONTAINING LAYER ON A SUBSTRATE USING AN ATOMIC LAYER DEPOSITION (ALD) PROCESS 有权使用原子层沉积（ALD）工艺在基板上形成含钛的层的方法公开(公告)号：US20110275215A1
公开(公告)日：2011-11-10
申请号：US12920026
申请日：2009-02-13
申请人： Satoko Gatineau , Christian Dussarrat , Christophe Lachaud , Nicolas Blasco , Audrey Pinchart , Ziyun Wang , Jean-Marc Girard , Andreas Zauner
发明人： Satoko Gatineau , Christian Dussarrat , Christophe Lachaud , Nicolas Blasco , Audrey Pinchart , Ziyun Wang , Jean-Marc Girard , Andreas Zauner
IPC分类号： H01L21/3205
CPC分类号： H01J29/86 , C07F17/00 , C23C16/405 , C23C16/409 , C23C16/45553 , H01J31/127 , H01J2201/30469
摘要： A method for forming a titanium-containing layer on a substrate, the method comprising at least the steps of: a) providing a vapor comprising at least one precursor compound of the formula Ti(Me5Cp)(OR)3 (I), wherein R is selected in the group consisting in methyl, ethyl, isopropyl; or of the formula Ti(R1Cp)(OR2)3 (II), wherein R1 is selected from the group consisting in H, methyl, ethyl, isopropyl and R2 is independently selected from the group consisting in methyl, ethyl, isopropyl or tert-butyl; b) reacting the vapor comprising the at least one compound of formula (I) or (II) with the substrate, according to an atomic layer deposition process, to form a layer of a tantalum-containing complex on at least one surface of said substrate.
摘要翻译： 一种在基材上形成含钛层的方法，所述方法至少包括以下步骤：a）提供包含至少一种式Ti（Me 5 C p）（OR）3（I）的前体化合物的蒸气，其中R 选自甲基，乙基，异丙基; 其中R 1选自H，甲基，乙基，异丙基和R 2独立地选自甲基，乙基，异丙基或叔丁基， 丁基; b）根据原子层沉积工艺使包含至少一种式（I）或（II）化合物的蒸气与基材反应，以在所述基材的至少一个表面上形成含钽复合物层 。
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6.发明授权Method of forming high-k dielectric films based on novel titanium, zirconium, and hafnium precursors and their use for semiconductor manufacturing 有权基于新型钛，锆和铪前体形成高k电介质膜的方法及其在半导体制造中的应用公开(公告)号：US08399056B2
公开(公告)日：2013-03-19
申请号：US12303165
申请日：2006-06-02
IPC分类号： C23C16/40
CPC分类号： H01L21/02205 , C07F7/00 , C07F7/003 , C07F17/00 , C23C16/18 , C23C16/308 , C23C16/34 , C23C16/40 , C23C16/403 , C23C16/405 , C23C16/407 , C23C16/45553 , H01L21/02148 , H01L21/02159 , H01L21/02178 , H01L21/02181 , H01L21/02189 , H01L21/02192 , H01L21/02194 , H01L21/02271 , H01L21/0228 , H01L21/3141 , H01L21/31641 , H01L21/31645
摘要： A method of forming on at least one support at least one metal containing dielectric films having the formula (M11-a M2a) Ob Nc, wherein: 0≦a
摘要翻译： 一种在至少一种载体上形成至少一种含金属的介电膜的方法，所述介电膜具有式（M11-a M2a）Ob Nc，其中：0＆nlE; a1,01和M2是金属Hf，Zr或Ti，使用具有戊二烯基 配体和/或环戊二烯基配体。
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公开(公告)号：US08367531B1
公开(公告)日：2013-02-05
申请号：US13041154
申请日：2011-03-04
IPC分类号： H01L21/425
CPC分类号： H01L21/26513 , H01J37/3171 , H01L21/26506 , H01L21/26566 , H01L21/2658
摘要： The present invention provides molecules useful for aluminum implant in semiconductor materials. The molecules can be used in various doping techniques such as ion implant, plasma doping or derivates methods.
摘要翻译： 本发明提供了可用于半导体材料中的铝植入物的分子。 分子可用于各种掺杂技术，例如离子注入，等离子体掺杂或衍生物方法。
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8.发明申请GROUP V METAL CONTAINING PRECURSORS AND THEIR USE FOR METAL CONTAINING FILM DEPOSITION 有权第V组含金属前驱体及其用于含金属膜的沉积公开(公告)号：US20100055310A1
公开(公告)日：2010-03-04
申请号：US12447237
申请日：2007-10-19
CPC分类号： C07F17/00
摘要： Compound of the formula (Ia), or of the formula (Ib). These new precursors are useful for pure metal, metallic oxide, oxynitride, nitride and/or silicide film deposition to make electrodes and/or high k layers, and/or copper diffusion barrier layers, etc.
摘要翻译： 式（Ia）或式（Ib）的化合物。 这些新的前体可用于纯金属，金属氧化物，氧氮化物，氮化物和/或硅化物膜沉积以制造电极和/或高k层，和/或铜扩散阻挡层等。
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9.发明申请METHOD OF FORMING HIGH-K DIELECTRIC FILMS BASED ON NOVEL TITANIUM, ZIRCONIUM, AND HAFNIUM PRECURSORS AND THEIR USE FOR SEMICONDUCTOR MANUFACTURING 有权基于新型钛，锆和铪前驱体的高K电介质膜的制备方法及其半导体制造用途公开(公告)号：US20090311879A1
公开(公告)日：2009-12-17
申请号：US12303165
申请日：2006-06-02
IPC分类号： H01L21/316 , H01B1/02
CPC分类号： H01L21/02205 , C07F7/00 , C07F7/003 , C07F17/00 , C23C16/18 , C23C16/308 , C23C16/34 , C23C16/40 , C23C16/403 , C23C16/405 , C23C16/407 , C23C16/45553 , H01L21/02148 , H01L21/02159 , H01L21/02178 , H01L21/02181 , H01L21/02189 , H01L21/02192 , H01L21/02194 , H01L21/02271 , H01L21/0228 , H01L21/3141 , H01L21/31641 , H01L21/31645
摘要： A method of forming on at least one support at least one metal containing dielectric films having the formula (M11-a M2a) Ob Nc, wherein: 0≦a
摘要翻译： 在至少一种载体上形成具有式（M11-a M2a）Ob Nc的至少一种含金属介电膜的方法，其中：0 <= a <1,0和M2是金属Hf，Zr或Ti， 戊二烯基配体和/或环戊二烯基配体。
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公开(公告)号：US08343860B1
公开(公告)日：2013-01-01
申请号：US13041127
申请日：2011-03-04
IPC分类号： H01L21/425
CPC分类号： H01L21/2658 , H01L21/26506 , H01L21/26513 , H01L21/26566
摘要： The present invention provides molecules with high carbon content for Carbon-containing species implant in semiconductor material. The molecules can be used in various doping techniques such as ion implant, plasma doping or derivates methods.
摘要翻译： 本发明为半导体材料中的含碳种类植入物提供具有高碳含量的分子。 分子可用于各种掺杂技术，例如离子注入，等离子体掺杂或衍生物方法。
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