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1.发明申请Luminous Means and Projector Comprising at Least One Luminous Means of this Type 审中-公开发光装置和投影仪包括这种类型的最少一个发光装置公开(公告)号：US20120039072A1
公开(公告)日：2012-02-16
申请号：US13141078
申请日：2009-10-19
申请人： Alfred Lell , Sönke Tautz , Uwe Strauss , Martin Rudolf Behringer , Stefanie Brüninghoff , Dimitri Dini , Dominik Eisert , Christoph Eichler
发明人： Alfred Lell , Sönke Tautz , Uwe Strauss , Martin Rudolf Behringer , Stefanie Brüninghoff , Dimitri Dini , Dominik Eisert , Christoph Eichler
CPC分类号： H04N9/3161 , H01S5/005 , H01S5/02292 , H01S5/4093 , H04N9/3129
摘要： In at least one embodiment of the light source (1), the latter includes at least one semiconductor laser (2), which is designed to emit a primary radiation (P) of a wavelength of between 360 nm and 485 nm inclusive. Furthermore, the light source (1) comprises at least one conversion medium (3), which is arranged downstream of the semiconductor laser (2) and is designed to convert at least part of the primary radiation (P) into secondary radiation (S) of a different, greater wavelength than the primary radiation (P). The radiation (R) emitted by the light source (1) here displays an optical coherence length which amounts to at most 50 μm.
摘要翻译： 在光源（1）的至少一个实施例中，后者包括至少一个半导体激光器（2），其设计成发射波长在360nm和485nm之间的初级辐射（P）。 此外，光源（1）包括至少一个转换介质（3），其设置在半导体激光器（2）的下游，并被设计成将至少一部分初级辐射（P）转换成次级辐射（S） 具有与初级辐射（P）不同的更大的波长。 由光源（1）发射的辐射（R）在这里显示出至多50μm的光学相干长度。
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2.发明申请Optoelectronic Semiconductor Chip, Display Comprising a Semiconductor Chip of this Type, and Use of a Semiconductor Chip of this Type or of a Display 有权光电半导体芯片，包括这种类型的半导体芯片的显示器以及这种类型的显示器的半导体芯片的使用公开(公告)号：US20140210348A1
公开(公告)日：2014-07-31
申请号：US14125028
申请日：2012-06-06
IPC分类号： H05B33/08
CPC分类号： H05B33/08 , H01L33/44 , H01L33/62 , H01L2924/0002 , H05B33/0845 , H01L2924/00
摘要： An optoelectronic semiconductor chip includes a semiconductor layer sequence having an active layer provided for generating radiation. The semiconductor chip can be operated in a first operating mode and in a second operating mode. The semiconductor layer sequence emits radiation in the first operating mode, while the semiconductor layer sequence emits no radiation in the second operating mode. The semiconductor layer sequence is operated in the forward direction in the first operating mode and in the reverse direction in the second operating mode. A display including a number of semiconductor chips of this type and a use as a motor vehicle headlight are furthermore specified.
摘要翻译： 光电子半导体芯片包括具有用于产生辐射的有源层的半导体层序列。 半导体芯片可以在第一操作模式和第二操作模式下操作。 半导体层序列在第一操作模式中发射辐射，而半导体层序列在第二操作模式中不发射辐射。 半导体层序列在第一操作模式中在正向操作，而在第二操作模式中在相反方向上操作。 此外还规定了包括这种类型的多个半导体芯片和用作机动车辆头灯的显示器。
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公开(公告)号：US07851812B2
公开(公告)日：2010-12-14
申请号：US11678523
申请日：2007-02-23
IPC分类号： H01L33/00
CPC分类号： H01L33/486 , H01L31/0203 , H01L33/58 , H01L2224/48091 , H01L2924/00014
摘要： An electronic device according to the invention includes a housing, a recess containing an optoelectronic component, and a film including a polyimide, which is over the recess covering the optoelectronic component.
摘要翻译： 根据本发明的电子设备包括壳体，包含光电子部件的凹部和包括聚酰亚胺的膜，该膜覆盖在光电子部件上。
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4.发明申请SEMICONDUCTOR LAYER SEQUENCE, OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD FOR PRODUCING A SEMICONDUCTOR LAYER SEQUENCE 有权半导体层序列，光电子半导体芯片和制造半导体层序列的方法公开(公告)号：US20140326948A1
公开(公告)日：2014-11-06
申请号：US14348587
申请日：2012-08-22
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/0062 , H01L33/08 , H01L33/12 , H01L33/30 , H01L33/305 , H01S5/34326
摘要： In at least one embodiment, the semiconductor layer sequence (1) is provided for an optoelectronic semiconductor chip (10). The semiconductor layer sequence (1) contains at least three quantum wells (2) which are arranged to generate electromagnetic radiation. Furthermore, the semiconductor layer sequence (1) includes a plurality of barrier layers (3), of which at least one barrier layer is arranged between two adjacent quantum wells (2) in each case. The quantum wells (2) have a first average indium content and the barrier layers (3) have a second, smaller, average indium content. A second average lattice constant of the barrier layers (3) is thereby smaller than a first average lattice constant of the quantum wells (2).
摘要翻译： 在至少一个实施例中，为光电半导体芯片（10）提供半导体层序列（1）。 半导体层序列（1）包含至少三个量子阱（2），其被布置成产生电磁辐射。 此外，半导体层序列（1）包括多个势垒层（3），其中在每种情况下在两个相邻的量子阱（2）之间布置有至少一个势垒层。 量子阱（2）具有第一平均铟含量，并且阻挡层（3）具有第二较小的平均铟含量。 因此阻挡层（3）的第二平均晶格常数小于量子阱（2）的第一平均晶格常数。
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公开(公告)号：US08094694B2
公开(公告)日：2012-01-10
申请号：US12211939
申请日：2008-09-17
IPC分类号： H01S3/04
CPC分类号： H01S5/042 , H01S5/0428 , H01S5/06216 , H01S5/0622 , H01S5/06837 , H01S5/0687
摘要： Circuit arrangements for the operation of a pulse laser diode and methods for operating a pulse laser diode include a current source to supply a direct current to the pulse laser diode. The circuit arrangement can provide operation of the pulse laser diode that can be stable and without unintentional shifts in wavelength.
摘要翻译： 用于脉冲激光二极管的操作的电路装置和用于操作脉冲激光二极管的方法包括向脉冲激光二极管提供直流电流的电流源。 该电路装置可以提供脉冲激光二极管的操作，该激光二极管可以是稳定的并且不会有无意的波长偏移。
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6.发明授权Semiconductor layer sequence, optoelectronic semiconductor chip and method for producing a semiconductor layer sequence 有权半导体层序列，光电半导体芯片以及半导体层序列的制造方法公开(公告)号：US09331238B2
公开(公告)日：2016-05-03
申请号：US14348587
申请日：2012-08-22
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/0062 , H01L33/08 , H01L33/12 , H01L33/30 , H01L33/305 , H01S5/34326
摘要： In at least one embodiment, the semiconductor layer sequence (1) is provided for an optoelectronic semiconductor chip (10). The semiconductor layer sequence (1) contains at least three quantum wells (2) which are arranged to generate electromagnetic radiation. Furthermore, the semiconductor layer sequence (1) includes a plurality of barrier layers (3), of which at least one barrier layer is arranged between two adjacent quantum wells (2) in each case. The quantum wells (2) have a first average indium content and the barrier layers (3) have a second, smaller, average indium content. A second average lattice constant of the barrier layers (3) is thereby smaller than a first average lattice constant of the quantum wells (2).
摘要翻译： 在至少一个实施例中，为光电半导体芯片（10）提供半导体层序列（1）。 半导体层序列（1）包含至少三个量子阱（2），其被布置成产生电磁辐射。 此外，半导体层序列（1）包括多个势垒层（3），其中在每种情况下在两个相邻的量子阱（2）之间布置有至少一个势垒层。 量子阱（2）具有第一平均铟含量，并且阻挡层（3）具有第二较小的平均铟含量。 阻挡层（3）的第二平均晶格常数因此小于量子阱（2）的第一平均晶格常数。
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7.发明授权Optoelectronic semiconductor chip, display comprising a semiconductor chip of this type, and use of a semiconductor chip of this type or of a display 有权光电半导体芯片，包括这种类型的半导体芯片的显示器，以及这种半导体芯片或显示器的使用公开(公告)号：US09320089B2
公开(公告)日：2016-04-19
申请号：US14125028
申请日：2012-06-06
CPC分类号： H05B33/08 , H01L33/44 , H01L33/62 , H01L2924/0002 , H05B33/0845 , H01L2924/00
摘要： An optoelectronic semiconductor chip includes a semiconductor layer sequence having an active layer provided for generating radiation. The semiconductor chip can be operated in a first operating mode and in a second operating mode. The semiconductor layer sequence emits radiation in the first operating mode, while the semiconductor layer sequence emits no radiation in the second operating mode. The semiconductor layer sequence is operated in the forward direction in the first operating mode and in the reverse direction in the second operating mode. A display including a number of semiconductor chips of this type and a use as a motor vehicle headlight are furthermore specified.
摘要翻译： 光电子半导体芯片包括具有用于产生辐射的有源层的半导体层序列。 半导体芯片可以在第一操作模式和第二操作模式下操作。 半导体层序列在第一操作模式中发射辐射，而半导体层序列在第二操作模式中不发射辐射。 半导体层序列在第一操作模式中在正向操作，而在第二操作模式中在相反方向上操作。 此外还规定了包括这种类型的多个半导体芯片和用作机动车辆头灯的显示器。
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公开(公告)号：US20090074021A1
公开(公告)日：2009-03-19
申请号：US12211939
申请日：2008-09-17
CPC分类号： H01S5/042 , H01S5/0428 , H01S5/06216 , H01S5/0622 , H01S5/06837 , H01S5/0687
摘要： Circuit arrangements for the operation of a pulse laser diode and methods for operating a pulse laser diode include a current source to supply a direct current to the pulse laser diode. The circuit arrangement can provide operation of the pulse laser diode that can be stable and without unintentional shifts in wavelength.
摘要翻译： 用于脉冲激光二极管的操作的电路装置和用于操作脉冲激光二极管的方法包括向脉冲激光二极管提供直流电流的电流源。 该电路装置可以提供脉冲激光二极管的操作，该激光二极管可以是稳定的并且不会有无意的波长偏移。
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公开(公告)号：US08981404B2
公开(公告)日：2015-03-17
申请号：US13825296
申请日：2011-09-14
CPC分类号： H01L33/405 , H01L33/38 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/01068 , H01L2924/00014 , H01L2924/00
摘要： An optoelectronic semiconductor chip includes a semiconductor layer stack and a mirror. The semiconductor layer stack has an active layer for generating electromagnetic radiation. The minor is arranged on an underside of the semiconductor layer stack. The mirror has a first region and a second region, the first region containing silver and the second region containing gold. A method of producing such a semiconductor chip is also defined.
摘要翻译： 光电子半导体芯片包括半导体层堆叠和反射镜。 半导体层堆叠具有用于产生电磁辐射的有源层。 次要布置在半导体层堆叠的下侧。 反射镜具有第一区域和第二区域，第一区域包含银，第二区域包含金。 还定义了制造这种半导体芯片的方法。
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公开(公告)号：US20140014989A1
公开(公告)日：2014-01-16
申请号：US13825296
申请日：2011-09-14
IPC分类号： H01L33/40
CPC分类号： H01L33/405 , H01L33/38 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/01068 , H01L2924/00014 , H01L2924/00
摘要： An optoelectronic semiconductor chip includes a semiconductor layer stack and a mirror. The semiconductor layer stack has an active layer for generating electromagnetic radiation. The mirror is arranged on an underside of the semiconductor layer stack. The mirror has a first region and a second region, the first region containing silver and the second region containing gold. A method of producing such a semiconductor chip is also defined.
摘要翻译： 光电子半导体芯片包括半导体层堆叠和反射镜。 半导体层堆叠具有用于产生电磁辐射的有源层。 反射镜布置在半导体层堆叠的下侧。 反射镜具有第一区域和第二区域，第一区域包含银，第二区域包含金。 还定义了制造这种半导体芯片的方法。
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