公开(公告)号：US20120039072A1

公开(公告)日：2012-02-16

申请号：US13141078

申请日：2009-10-19

申请人： Alfred Lell ,  Sönke Tautz ,  Uwe Strauss ,  Martin Rudolf Behringer ,  Stefanie Brüninghoff ,  Dimitri Dini ,  Dominik Eisert ,  Christoph Eichler

发明人： Alfred Lell ,  Sönke Tautz ,  Uwe Strauss ,  Martin Rudolf Behringer ,  Stefanie Brüninghoff ,  Dimitri Dini ,  Dominik Eisert ,  Christoph Eichler

IPC分类号： H01S5/06 ,  H01S5/40

CPC分类号： H04N9/3161 ,  H01S5/005 ,  H01S5/02292 ,  H01S5/4093 ,  H04N9/3129

摘要： In at least one embodiment of the light source (1), the latter includes at least one semiconductor laser (2), which is designed to emit a primary radiation (P) of a wavelength of between 360 nm and 485 nm inclusive. Furthermore, the light source (1) comprises at least one conversion medium (3), which is arranged downstream of the semiconductor laser (2) and is designed to convert at least part of the primary radiation (P) into secondary radiation (S) of a different, greater wavelength than the primary radiation (P). The radiation (R) emitted by the light source (1) here displays an optical coherence length which amounts to at most 50 μm.

摘要翻译： 在光源（1）的至少一个实施例中，后者包括至少一个半导体激光器（2），其设计成发射波长在360nm和485nm之间的初级辐射（P）。 此外，光源（1）包括至少一个转换介质（3），其设置在半导体激光器（2）的下游，并被设计成将至少一部分初级辐射（P）转换成次级辐射（S） 具有与初级辐射（P）不同的更大的波长。 由光源（1）发射的辐射（R）在这里显示出至多50μm的光学相干长度。

公开(公告)号：US20060289854A1

公开(公告)日：2006-12-28

申请号：US11463633

申请日：2006-08-10

申请人： Volker Harle ,  Berthold Hahn ,  Hans-Jurgen Lugauer ,  Helmut Bolay ,  Stefan Bader ,  Dominik Eisert ,  Uwe Strauss ,  Johannes Volkl ,  Ulrich Zehnder ,  Alfred Lell ,  Andreas Weimer

发明人： Volker Harle ,  Berthold Hahn ,  Hans-Jurgen Lugauer ,  Helmut Bolay ,  Stefan Bader ,  Dominik Eisert ,  Uwe Strauss ,  Johannes Volkl ,  Ulrich Zehnder ,  Alfred Lell ,  Andreas Weimer

IPC分类号： H01L31/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/3407 ,  H01S5/3408 ,  H01S5/34333

摘要： An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.

摘要翻译： 具有多量子阱结构的光半导体器件，其中包括各种类型的半导体层的阱层和阻挡层交替层叠，其中基于氮化物半导体材料的第一组合物的器件阱层（6a）具有第一 提供具有与第一电子能量相比较高的电子能量的氮化物半导体材料的第二组合物的电子能量和阻挡层（6b），然后在生长方向上通过辐射活性量子阱 层（6c），其中布置在前面的基本上不辐射的阱层（6a）和阻挡层（6b）形成超晶格。

公开(公告)号：US06849881B1

公开(公告)日：2005-02-01

申请号：US09913394

申请日：2000-11-20

申请人： Volker Harle ,  Berthold Hahn ,  Hans-Jürgen Lugauer ,  Helmut Bolay ,  Stefan Bader ,  Dominik Eisert ,  Uwe Strauss ,  Johannes Völkl ,  Ulrich Zehnder ,  Alfred Lell ,  Andreas Weimer

发明人： Volker Harle ,  Berthold Hahn ,  Hans-Jürgen Lugauer ,  Helmut Bolay ,  Stefan Bader ,  Dominik Eisert ,  Uwe Strauss ,  Johannes Völkl ,  Ulrich Zehnder ,  Alfred Lell ,  Andreas Weimer

IPC分类号： H01L33/06 ,  H01L33/32 ,  H01S5/34 ,  H01S5/343 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L32/26

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/3407 ,  H01S5/3408 ,  H01S5/34333

摘要： An optical semiconductor device with a multiple quantum well structure, is set out in which well layers and barrier layers, comprising various types of semiconductor layers, are alternately layered. The device well layers comprise a first composition based on a nitride semiconductor material with a first electron energy. The barrier layers comprise a second composition of a nitride semiconductor material with electron energy which is higher in comparison to the first electron energy. The well and barrier layers are in the direction of growth, by a radiation-active quatum well layer which with the essentially non-radiating well layers (6a) and the barrier layers (6b), arranged in front, form a supperlattice.

摘要翻译： 提出了具有多量子阱结构的光半导体器件，其中包括各种类型的半导体层的阱层和势垒层交替层叠。 器件阱层包括基于具有第一电子能的氮化物半导体材料的第一组合物。 阻挡层包括氮化物半导体材料的第二组合物，其电子能量与第一电子能量相比较高。 井和阻挡层沿生长方向通过辐射活性层的井层，其中布置在前面的基本上不辐射的阱层（6a）和阻挡层（6b）形成超晶格。

公开(公告)号：US07556974B2

公开(公告)日：2009-07-07

申请号：US11463633

申请日：2006-08-10

申请人： Volker Harle ,  Berthold Hahn ,  Hans-Jurgen Lugauer ,  Helmut Bolay ,  Stefan Bader ,  Dominik Eisert ,  Uwe Strauss ,  Johannes Volkl ,  Ulrich Zehnder ,  Alfred Lell ,  Andreas Weimar

发明人： Volker Harle ,  Berthold Hahn ,  Hans-Jurgen Lugauer ,  Helmut Bolay ,  Stefan Bader ,  Dominik Eisert ,  Uwe Strauss ,  Johannes Volkl ,  Ulrich Zehnder ,  Alfred Lell ,  Andreas Weimar

IPC分类号： H01L21/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/3407 ,  H01S5/3408 ,  H01S5/34333

摘要： An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.

摘要翻译： 具有多量子阱结构的光半导体器件，其中包括各种类型的半导体层的阱层和阻挡层交替层叠，其中基于具有第一电子的氮化物半导体材料的第一组合物的器件阱层（6a） 提供具有与第一电子能量相比更高的电子能量的氮化物半导体材料的第二组合物的能量和势垒层（6b），然后通过辐射活性量子阱层（在生长方向上） 6c），其中布置在前面的基本上不辐射的阱层（6a）和阻挡层（6b）形成超晶格。

公开(公告)号：US20050116216A1

公开(公告)日：2005-06-02

申请号：US11014677

申请日：2004-12-16

申请人： Volker Harle ,  Berthold Hahn ,  Hans-Jurgen Lugauer ,  Helmut Bolay ,  Stefan Bader ,  Dominik Eisert ,  Uwe Strauss ,  Johannes Volkl ,  Ulrich Zehnder ,  Alfred Lell ,  Andreas Weimer

发明人： Volker Harle ,  Berthold Hahn ,  Hans-Jurgen Lugauer ,  Helmut Bolay ,  Stefan Bader ,  Dominik Eisert ,  Uwe Strauss ,  Johannes Volkl ,  Ulrich Zehnder ,  Alfred Lell ,  Andreas Weimer

IPC分类号： H01L33/06 ,  H01L33/32 ,  H01S5/34 ,  H01S5/343 ,  H01L29/06

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/3407 ,  H01S5/3408 ,  H01S5/34333

摘要： An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.

摘要翻译： 具有多量子阱结构的光半导体器件，其中包括各种类型的半导体层的阱层和阻挡层交替层叠，其中基于氮化物半导体材料的第一组合物的器件阱层（6a）具有第一 提供具有与第一电子能量相比较高的电子能量的氮化物半导体材料的第二组合物的电子能量和阻挡层（6b），然后在生长方向上通过辐射活性量子阱 层（6c），其中布置在前面的基本上不辐射的阱层（6a）和阻挡层（6b）形成超晶格。

公开(公告)号：US07106090B2

公开(公告)日：2006-09-12

申请号：US11014677

申请日：2004-12-16

申请人： Volker Harle ,  Berthold Hahn ,  Hans-Jurgen Lugauer ,  Helmut Bolay ,  Stefan Bader ,  Dominik Eisert ,  Uwe Strauss ,  Johannes Volkl ,  Ulrich Zehnder ,  Alfred Lell ,  Andreas Weimer

发明人： Volker Harle ,  Berthold Hahn ,  Hans-Jurgen Lugauer ,  Helmut Bolay ,  Stefan Bader ,  Dominik Eisert ,  Uwe Strauss ,  Johannes Volkl ,  Ulrich Zehnder ,  Alfred Lell ,  Andreas Weimer

IPC分类号： G01R31/00 ,  G01R31/26 ,  G01R31/28

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/3407 ,  H01S5/3408 ,  H01S5/34333

摘要： An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.

摘要翻译： 具有多量子阱结构的光半导体器件，其中包括各种类型的半导体层的阱层和阻挡层交替层叠，其中基于氮化物半导体材料的第一组合物的器件阱层（6a）具有第一 提供具有与第一电子能量相比较高的电子能量的氮化物半导体材料的第二组合物的电子能量和阻挡层（6b），然后在生长方向上通过辐射活性量子阱 层（6c），其中布置在前面的基本上不辐射的阱层（6a）和阻挡层（6b）形成超晶格。

公开(公告)号：US20080179380A1

公开(公告)日：2008-07-31

申请号：US11567977

申请日：2006-12-07

申请人： Johannes Baur ,  Dominik Eisert ,  Michael Fehrer ,  Berthold Hahn ,  Volker Harle ,  Marianne Ortmann ,  Uwe Strauss ,  Johannes Volkl ,  Ulrich Zehnder

发明人： Johannes Baur ,  Dominik Eisert ,  Michael Fehrer ,  Berthold Hahn ,  Volker Harle ,  Marianne Ortmann ,  Uwe Strauss ,  Johannes Volkl ,  Ulrich Zehnder

IPC分类号： A47J36/02

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/02 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2924/10155 ,  H01L2924/00014

摘要： A radiation-emitting semiconductor component has an improved radiation efficiency. The semiconductor component has a multilayer structure with an active layer for generating radiation within the multilayer structure and also a window having a first and a second main surface. The multi-layer structure adjoins the first main surface of the window. At least one recess, such as a trench or a pit, is formed in the window from the second main surface for the purpose of increasing the radiation efficiency. The recess preferably has a trapezoidal cross section tapering toward the first main surface and can be produced for example by sawing into the window.

摘要翻译： 辐射发射半导体组件具有改进的辐射效率。 半导体部件具有多层结构，其具有用于在多层结构内产生辐射的有源层，以及具有第一和第二主表面的窗口。 多层结构邻接窗口的第一主表面。 为了提高辐射效率，至少一个凹槽（例如沟槽或凹坑）从第二主表面形成在窗口中。 凹部优选地具有朝向第一主表面渐缩的梯形横截面，并且可以例如通过锯入窗口来制造。

公开(公告)号：US20050003565A1

公开(公告)日：2005-01-06

申请号：US10837828

申请日：2004-05-03

申请人： Dominik Eisert ,  Volker Haerle ,  Frank Kuehn ,  Manfred Mundbrod-Vangerow ,  Uwe Strauss ,  Ulrich Zehnder

发明人： Dominik Eisert ,  Volker Haerle ,  Frank Kuehn ,  Manfred Mundbrod-Vangerow ,  Uwe Strauss ,  Ulrich Zehnder

IPC分类号： H01L33/00 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/40 ,  H01L21/00

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/60 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/10155 ,  H01L2924/00014 ,  H01L2924/00

摘要： Radiation-emitting semiconductor device, method for fabricating same and radiation-emitting optical device. A radiation-emitting semiconductor device with a multilayer structure (100) comprising a radiation-emitting active layer (10), with electrical contacts (30, 40) for impressing a current in the multilayer structure (100) and with a radiotransparent window layer (20). The window layer is arranged exclusively on the side of the multilayer structure (100) facing away from a main direction of radiation of the semiconductor device and has at least one side wall that includes a first side wall portion (20a) which extends obliquely, concavely or in a stepwise manner toward a central axis of the semiconductor device lying perpendicular to the multilayer sequence. In its subsequent extension toward the back side, viewed from the multilayer structure, the side wall changes over into a second side wall portion (20b) that extends perpendicularly to the multilayer structure, that is, parallel to the central axis, and the portion of the window layer (20) encompassing the second side wall portion (20b) forms a mounting pedestal for the semiconductor device. The first and second side wall portions are fabricated especially preferably by means of a saw blade having a shaped edge. In a preferred optical device, the semiconductor device is mounted window layer downward in a reflector cup.

摘要翻译： 辐射发射半导体器件，其制造方法和发射光学器件。 一种具有多层结构（100）的辐射发射半导体器件（100），包括辐射发射有源层（10），具有用于在多层结构（100）中施加电流的电触点（30,40）以及无线电透过窗口层 20）。 窗层仅排列在背离半导体器件的主辐射方向的多层结构（100）的侧面上，并具有至少一个侧壁，该侧壁包括第一侧壁部分（20a），该第一侧壁部分倾斜地， 或者以逐步的方式朝向垂直于多层序列的半导体器件的中心轴线。 在从多层结构观察的随后的向后延伸的过程中，侧壁转变成垂直于多层结构延伸的第二侧壁部分（20b），即平行于中心轴线的部分 包围第二侧壁部分（20b）的窗口层（20）形成用于半导体器件的安装基座。 第一和第二侧壁部分特别优选地通过具有成形边缘的锯片来制造。 在优选的光学器件中，半导体器件将窗口层向下安装在反射杯中。

公开(公告)号：US08330175B2

公开(公告)日：2012-12-11

申请号：US11154292

申请日：2005-06-16

申请人： Dominik Eisert ,  Uwe Strauss

发明人： Dominik Eisert ,  Uwe Strauss

IPC分类号： H01L33/22

CPC分类号： H01L33/22 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405 ,  H01L2933/0016

摘要： An electromagnetic radiation generating semiconductor chip is disclosed. A semiconductor layer sequence suitable for generating electromagnetic radiation is grown on a first main face of a radioparent, electrically conductive growth substrate, for example, a SiC growth substrate. Provided on a second main face of said growth substrate that faces away from said semiconductor layer sequence is a roughening that acts as a diffuser for an electromagnetic radiation emitted into said growth substrate by said semiconductor layer sequence and that in particular has a scattering factor higher than 0.25. A layer or layer sequence reflective of the electromagnetic radiation is applied to said roughening. A method for making the semiconductor chip is also disclosed.

摘要翻译： 公开了电磁辐射生成半导体芯片。 适用于产生电磁辐射的半导体层序列生长在放射性，导电的生长衬底（例如SiC生长衬底）的第一主面上。 提供在所述生长衬底的远离所述半导体层序列的第二主面上是粗糙化，其作为用于通过所述半导体层序列发射到所述生长衬底中的电磁辐射的扩散器，并且特别地具有高于 0.25。 将反射电磁辐射的层序列应用于所述粗糙化。 还公开了制造半导体芯片的方法。

公开(公告)号：US07205578B2

公开(公告)日：2007-04-17

申请号：US10203728

申请日：2001-02-15

申请人： Dominik Eisert ,  Volker Härle ,  Frank Kühn ,  Manfred Mundbrod-Vangerow ,  Uwe Strauss ,  Jacob Ulrich ,  Ernst Nirschl ,  Norbert Linder ,  Reinhard Sedlmeier ,  Ulrich Zehnder ,  Johannes Baur

发明人： Dominik Eisert ,  Volker Härle ,  Frank Kühn ,  Manfred Mundbrod-Vangerow ,  Uwe Strauss ,  Jacob Ulrich ,  Ernst Nirschl ,  Norbert Linder ,  Reinhard Sedlmeier ,  Ulrich Zehnder ,  Johannes Baur

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L21/32139 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/42 ,  H01L33/46

摘要： This invention describes a radiation-emitting semiconductor component with the a multilayered structure (4) that contains a radiation-emitting active layer (5), and a window (1) transparent to radiation that has a first principal face (2) and a second principal face (3) opposite the first principal face (2), and whose first principal face (2) adjoins the multilayered structure (4).At least one recess (8) is made in the window (1), which preferably has the form of an indentation of the second principal face or as an edge excavation. At least one lateral surface of the window (1) or of the recess (8) is provided at least partially with a contact surface (11). Alternatively or cumulatively, at least one contact surface of the component has a plurality of openings (14).

摘要翻译： 本发明描述了一种具有多层结构（4）的辐射发射半导体部件，其包含发射有辐射的有源层（5）和对具有第一主面（2）和第二主面（2）的辐射透明的窗口 主面（3）与第一主面（2）相对，并且其第一主面（2）与多层结构（4）相邻。