公开(公告)号：US20070052642A1

公开(公告)日：2007-03-08

申请号：US11476795

申请日：2006-06-29

申请人： Chul Jang ,  Jin Choi

发明人： Chul Jang ,  Jin Choi

IPC分类号： G09G3/36

CPC分类号： G09G3/3688 ,  G09G2310/027 ,  G09G2320/0276 ,  G09G2330/021

摘要： A circuit for driving a liquid crystal display device, as embodied, includes: a gray level voltage generator for generating a plurality of gray level voltages; and an intermediate gray level voltage generator for receiving a first gray level voltage and a second gray level voltage among the plurality of gray level voltages and for selectively outputting one of the first gray level voltage and a third gray level voltage through a plurality of capacitors, a value of the third gray level voltage being between the first and second gray level voltage and set by the plurality of capacitors, the intermediate gray level voltage generator including: an operational amplifier for pre-charging the plurality of capacitors using a current outputted from the operational amplifier and for selectively outputting one of the first gray level voltage and the third gray level voltage.

摘要翻译： 具体实施方式的驱动液晶显示装置的电路包括：灰度级电压发生器，用于产生多个灰度级电压; 以及中间灰度级电压发生器，用于接收所述多个灰度级电压中的第一灰度电压和第二灰度级电压，并且通过多个电容器选择性地输出所述第一灰度级电压和第三灰度级电压之一， 所述第三灰度级电压的值在所述第一和第二灰度级电压之间并由所述多个电容器设定，所述中间灰度级电压发生器包括：运算放大器，用于使用从所述多个电容器输出的电流对所述多个电容器进行预充电 运算放大器，并且用于选择性地输出第一灰度级电压和第三灰度级电压之一。

公开(公告)号：US09671686B2

公开(公告)日：2017-06-06

申请号：US14693429

申请日：2015-04-22

申请人： Jin Choi ,  In-kyun Shin ,  Byoung-sup Ahn ,  Sang-hee Lee

发明人： Jin Choi ,  In-kyun Shin ,  Byoung-sup Ahn ,  Sang-hee Lee

IPC分类号： G03F1/78 ,  G03F1/36

CPC分类号： G03F1/78 ,  G03F1/36

摘要： Disclosed are an exposure method and a method of manufacturing a mask and a semiconductor device using the same, which minimize time taken by mask data preparation (MDP) to optimize a total exposure process and enhance a quality of a pattern by using an inverse solution concept, based on a multi-beam mask writer. The exposure method includes receiving mask tape output (MTO) design data obtained through optical proximity correction (OPC), preparing mask data, including a job deck, for the MTO design data without a data format conversion, performing complex correction, including proximity effect correction (PEC) of an error caused by an e-beam proximity effect and mask process correction (MPC) of an error caused by an exposure process, on the mask data, generating pixel data, based on data for which the complex correction is performed, and performing e-beam writing on a substrate for a mask, based on the pixel data.

公开(公告)号：US08817234B2

公开(公告)日：2014-08-26

申请号：US13180776

申请日：2011-07-12

申请人： Jin Choi ,  Byung-gook Kim

发明人： Jin Choi ,  Byung-gook Kim

IPC分类号： G03B27/54 ,  G03F7/20 ,  G02B27/42 ,  G02B27/09 ,  G02B3/00

CPC分类号： G02B3/0062 ,  G02B3/0056 ,  G02B5/1885 ,  G02B27/0905 ,  G02B27/0944 ,  G02B27/425 ,  G02B27/4277 ,  G02B27/50 ,  G02F1/29 ,  G02F1/31 ,  G03F7/70208 ,  G03F7/70275

摘要： An optical device for splitting a single beam to a plurality of beams and an exposure apparatus including the optical device are disclosed. The optical device includes a first DOE lens array including a plurality of first diffractive optical element (DOE) lenses that are two-dimensionally arranged on a first plane and a second lens array including a plurality of second DOE lenses arranged on a second plane parallel to the first plane so as to respectively correspond to the plurality of first DOE lenses. The first DOE lens array splits a first parallel beam into a plurality of second beams by condensing the first parallel beam and the second DOE lens array modifies the plurality of second beams into a plurality of third beams.

摘要翻译： 公开了一种用于将单个光束分割成多个光束的光学装置和包括该光学装置的曝光装置。 光学装置包括第一DOE透镜阵列，其包括二维地布置在第一平面上的多个第一衍射光学元件（DOE）透镜和第二透镜阵列，所述第二透镜阵列包括布置在平行于第二平面的第二平面上的多个第二DOE透镜 第一平面，以分别对应于多个第一DOE透镜。 第一DOE透镜阵列通过聚焦第一平行光束将第一平行光束分成多个第二光束，并且第二DOE透镜阵列将多个第二光束修改成多个第三光束。

公开(公告)号：US20140083926A1

公开(公告)日：2014-03-27

申请号：US13627471

申请日：2012-09-26

申请人： Eric Winters ,  John Lewis ,  Brian Fields ,  Jin Choi

发明人： Eric Winters ,  John Lewis ,  Brian Fields ,  Jin Choi

IPC分类号： B01D39/08

CPC分类号： B01D39/083 ,  B01D39/08 ,  B01D39/1623 ,  B01D39/2017 ,  B01D2239/065 ,  B01D2239/0681 ,  B01D2239/0686 ,  B01D2239/1216

摘要： The above objective are accomplished by providing a filter medium for use in manufacturing of hydraulic fluid and air filters comprising: an upstream layer comprised of nonwoven fiber having a denier between about 5.0 and 7.0 and a weight of between about 3.0 and 5.0 ounces a scrim and a cap layer comprising a fiber having a denier between about 0.1 and 5.0 denier and a weight between about 2.0 and 4.0 ounces carried by said upstream layer and disposed downstream from said upstream layer. The upstream layer, scrim and cap layer can have a weight of about 4.0 ounces, 2.0 ounces and 3.0 ounces respectively. A downstream layer can be disposed between said upstream layer and said cap layer.

摘要翻译： 上述目的通过提供用于制造液压流体和空气过滤器的过滤介质来实现，该过滤介质包括：由非织造纤维构成的上游层，其旦尼尔为约5.0至7.0，重量为约3.0至5.0盎司为稀松布， 帽层，其包含旦尼尔在约0.1至5.0旦尼尔之间的纤维和由所述上游层承载并设置在所述上​​游层的下游的约2.0至4.0盎司的重量。 上游层，稀松布和覆盖层的重量可以分别为约4.0盎司，2.0盎司和3.0盎司。 下游层可以设置在所述上​​游层和所述覆盖层之间。

公开(公告)号：USD698948S1

公开(公告)日：2014-02-04

申请号：US29388977

申请日：2011-04-05

申请人： Jin Choi ,  Thomas Adam Shine

设计人： Jin Choi ,  Thomas Adam Shine

公开(公告)号：US08458624B2

公开(公告)日：2013-06-04

申请号：US13192124

申请日：2011-07-27

申请人： Jin Choi ,  Sang-hee Lee ,  Seong-june Min

发明人： Jin Choi ,  Sang-hee Lee ,  Seong-june Min

IPC分类号： G06F17/50

CPC分类号： G03F1/78 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/31764 ,  H01J2237/31771 ,  H01J2237/31776

摘要： A method of manufacturing semiconductor devices is disclosed. The method includes determining fractured shots that do not overlap each other based on a final pattern; determining overlapping shots that are shots that overlap each other based on the final pattern; generating area difference data by comparing the areas of the overlapping shots and the fractured shots with each other; calculating a radiation influenced pattern based on the area difference data; and correcting the overlapping shots based on the radiation influenced pattern.

摘要翻译： 公开了制造半导体器件的方法。 该方法包括基于最终模式确定彼此不重叠的断裂射击; 确定基于最终模式重叠的重叠拍摄; 通过比较重叠射击和断裂射击的面积来产生区域差异数据; 基于面积差异数据计算辐射影响模式; 并基于辐射影响模式校正重叠拍摄。

公开(公告)号：US20130015559A1

公开(公告)日：2013-01-17

申请号：US13546415

申请日：2012-07-11

申请人： Sung-Ho LEE ,  Jin Choi ,  Yong-Ho Yoo ,  Jong-Hyuk Kang ,  Hyun-Joo Cha ,  Hee-Dong Park ,  Tae-Jung Park

发明人： Sung-Ho LEE ,  Jin Choi ,  Yong-Ho Yoo ,  Jong-Hyuk Kang ,  Hyun-Joo Cha ,  Hee-Dong Park ,  Tae-Jung Park

IPC分类号： H01L27/08 ,  H01L21/82

CPC分类号： H01L28/91 ,  H01L27/10817 ,  H01L27/10852 ,  H01L28/60

摘要： A semiconductor device includes a plurality of lower electrodes on a substrate, with each of the lower electrodes extending in a height direction from the substrate and including sidewalls, the lower electrodes being spaced apart from each other in a first direction and in a second direction, a plurality of first supporting layer patterns contacting the sidewalls of the lower electrodes, the first supporting layer patterns extending in the first direction between ones of the lower electrodes adjacent in the second direction, a plurality of second supporting layer patterns contacting the sidewalls of the lower electrodes, the second supporting layer pattern extending in the second direction between ones of the lower electrodes adjacent in the first direction, the plurality of second supporting layer patterns being spaced apart from the plurality of first supporting layer patterns in the height direction.

摘要翻译： 半导体器件包括在基片上的多个下电极，其中每个下电极从衬底沿高度方向延伸并且包括侧壁，下电极在第一方向和第二方向彼此间隔开， 与下电极的侧壁接触的多个第一支撑层图案，第一支撑层图案沿着第一方向在第二方向上相邻的下电极之间延伸;多个第二支撑层图案，其与下部电极的侧壁接触; 电极，所述第二支撑层图案沿着所述第二方向在与所述第一方向相邻的所述下电极中的所述第二方向延伸，所述多个第二支撑层图案在所述高度方向上与所述多个第一支撑层图案间隔开。

公开(公告)号：US20120288787A1

公开(公告)日：2012-11-15

申请号：US13443440

申请日：2012-04-10

申请人： Jin Choi ,  Jin-Ha Jeong ,  Urazaev Vladimir ,  Hea-Yun Lee

发明人： Jin Choi ,  Jin-Ha Jeong ,  Urazaev Vladimir ,  Hea-Yun Lee

IPC分类号： G03F1/78 ,  G21K5/04

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/78 ,  G03F1/80 ,  H01J37/3026 ,  H01J2237/0455 ,  H01J2237/31764 ,  H01J2237/31776

摘要： In a method of forming a reticle and electron beam exposure system, first electron beams are irradiated onto a first region of a blank reticle having a light shielding layer and a photosensitive layer, to form first shot patterns. Second electron beams having a cross-sectional area larger than the first electron beams are irradiated onto a second region of the blank reticle. The photosensitive layer is developed to form first and second mask patterns at the first and second regions, respectively. The light shielding layer is etched off using the first and second mask patterns as an etching mask, thereby forming the mother pattern including a first pattern in the first region and a second pattern in the second region. Accordingly, the enlargement of the second electron beams reduces the scan time for the blank reticle, thereby reducing the process time.

摘要翻译： 在形成掩模版和电子束曝光系统的方法中，将第一电子束照射到具有遮光层和感光层的坯料掩模版的第一区域上，以形成第一射出图案。 具有大于第一电子束的横截面面积的第二电子束被照射到坯料掩模版的第二区域上。 感光层被显影以分别在第一和第二区域形成第一和第二掩模图案。 使用第一和第二掩模图案作为蚀刻掩模蚀刻掉遮光层，从而形成包括第一区域中的第一图案和第二区域中的第二图案的母体图案。 因此，第二电子束的放大减少了空白掩模版的扫描时间，从而缩短了处理时间。

公开(公告)号：US07948785B2

公开(公告)日：2011-05-24

申请号：US12289650

申请日：2008-10-31

申请人： Jin Choi

发明人： Jin Choi

IPC分类号： G11C5/02

CPC分类号： G11C5/025 ,  G11C7/06 ,  G11C7/18 ,  G11C11/4091 ,  G11C11/4097

摘要： A semiconductor device having sense amplifiers and an electronic system employing the same are provided. The semiconductor device includes first sense amplifier blocks arranged in a row direction on a substrate and spaced apart from each other by a first distance. A second sense amplifier block spaced apart from the first sense amplifier blocks by a second distance greater than the first distance is provided. A plurality of cell array blocks arranged in the row direction on the substrate is provided. Each of the first and second sense amplifier blocks is disposed between the cell array blocks, and each of the cell array blocks includes a plurality of memory cells.

摘要翻译： 提供了一种具有读出放大器的半导体器件和采用该放大器的电子系统。 半导体器件包括在衬底上沿行方向布置并且彼此间隔开第一距离的第一读出放大器块。 提供了与第一读出放大器块间隔开大于第一距离的第二距离的第二读出放大器块。 提供了在基板上排列成行方向的多个单元阵列块。 第一和第二读出放大器块中的每一个设置在单元阵列块之间，并且每个单元阵列块包括多个存储单元。

公开(公告)号：US20100209831A1

公开(公告)日：2010-08-19

申请号：US12656817

申请日：2010-02-17

申请人： Jin Choi ,  Dong-Seok Nam

发明人： Jin Choi ,  Dong-Seok Nam

IPC分类号： G03F7/20 ,  G01B11/14 ,  G03B27/32

CPC分类号： G03F9/7049 ,  B82Y10/00 ,  B82Y40/00 ,  G03F9/7003 ,  G03F9/7011 ,  G03F9/7019 ,  G03F9/7088 ,  H01J37/3045 ,  H01J37/3174 ,  H01J2237/2482 ,  H01J2237/30438 ,  Y10S430/146

摘要： A method for correcting a position error of a lithography apparatus comprises inputting position data of exposure pattern, irradiating laser light onto a position reference mask from a position measurement laser system, calculating actual position data of the laser light irradiated onto the position reference mask, and comparing the position data of the exposure pattern with the actual position data of the laser light irradiated onto the position reference mask. With this method, circuit patterns can be accurately formed at predetermined positions on a photomask, and the circuit patterns on the photomask can be accurately formed at predetermined positions on a wafer.

摘要翻译： 一种用于校正光刻设备的位置误差的方法，包括：输入曝光图案的位置数据，从位置测量激光系统将激光照射到位置参考掩模上，计算照射到位置参考掩模上的激光的实际位置数据，以及 将曝光图案的位置数据与照射到位置参考掩模上的激光的实际位置数据进行比较。 利用该方法，可以在光掩模上的预定位置精确地形成电路图案，并且可以在晶片上的预定位置精确地形成光掩模上的电路图案。