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    Method of making an InP-based device comprising semiconductor growth on a non-planar surface
    2.
    发明授权
    Method of making an InP-based device comprising semiconductor growth on a non-planar surface 失效
    制造在非平面表面上包含半导体生长的基于InP的器件的方法

    公开(公告)号：US5633193A

    公开(公告)日：1997-05-27

    申请号：US652285

    申请日：1996-05-22

    申请人： James N. Baillargeon ,  Alfred Y. Cho ,  Sung-Nee G. Chu ,  Wen-Yen Hwang

    发明人： James N. Baillargeon ,  Alfred Y. Cho ,  Sung-Nee G. Chu ,  Wen-Yen Hwang

    IPC分类号： H01L33/00 ,  H01L21/203 ,  H01L21/205 ,  H01S5/00 ,  H01L21/20

    CPC分类号： H01L21/02392 ,  H01L21/0243 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02543 ,  H01L21/02546

    摘要： Heteroepitaxial growth of phosphorus-containing III/V semiconductor material (e.g., InGaAsP) on a non-planar surface of a different phosphorus-containing III/V semiconductor material (e.g., InP) is facilitated by heating the non-planar surface in a substantially evacuated chamber to a mass-transport temperature, and exposing the surface to a flux of at least phosphorus form a solid phosphorus source. This mass-transport step is followed by in situ growth of the desired semiconductor material, with at least an initial portion of the growth being done at a first growth temperature that is not greater than the mass transport temperature. Growth typically is completed at a second growth temperature higher than the first growth temperature. A significant aspect of the method is provision of the required fluxes (e.g., phosphorus, arsenic, indium, gallium) from solid sources, resulting in hydrogen-free mass transport and growth, which can be carried out at lower temperatures than is customary in the prior art. An exemplary and preferred application of the method is in grating formation and overgrowth in InP-based DFB lasers.

    摘要翻译： 在不同的含磷III / V半导体材料（例如，InP）的非平面表面上的含磷III / V半导体材料（例如，InGaAsP）的异质外延生长通过基本上加热非平面表面而得到促进 抽真空室至质量传递温度，并将表面暴露于至少磷的助熔剂形成固体磷源。 该质量传送步骤之后是期望的半导体材料的原位生长，其中生长的至少初始部分在不大于质量传输温度的第一生长温度下进行。 生长通常在高于第一生长温度的第二生长温度下完成。 该方法的一个重要方面是从固体源提供所需的通量（例如磷，砷，铟，镓），导致无氢的质量传输和生长，其可以在比在 现有技术 该方法的示例性和优选应用是在基于InP的DFB激光器中的光栅形成和过度生长。

    Depletion stop transistor
    4.
    发明授权
    Depletion stop transistor 失效
    耗尽停止晶体管

    公开(公告)号：US4750025A

    公开(公告)日：1988-06-07

    申请号：US823985

    申请日：1986-01-30

    申请人： Chung Y. Chen ,  Alfred Y. Cho

    发明人： Chung Y. Chen ,  Alfred Y. Cho

    IPC分类号： H01L29/10 ,  H01L29/205 ,  H01L29/70

    CPC分类号： H01L29/1004

    摘要： We have found that transistors have desirable device characteristics when the base region is composed of a lightly doped layer near the emitter junction and a heavily doped layer near the collector junction. The edge of the depletion region at the emitter-base junction is designed to stop in the lightly doped base region.

    摘要翻译： 当基极区域由发射极结附近的轻掺杂层和集电极结附近的重掺杂层构成时，我们发现晶体管具有期望的器件特性。 在发射极 - 基极结处的耗尽区的边缘设计成在轻掺杂的基极区域中停止。

    Integrated optical package for coupling optical fibers to devices with asymmetric light beams
    10.
    发明授权
    Integrated optical package for coupling optical fibers to devices with asymmetric light beams 失效
    用于将光纤耦合到具有不对称光束的装置的集成光学封装

    公开(公告)号：US5265177A

    公开(公告)日：1993-11-23

    申请号：US881020

    申请日：1992-05-08

    申请人： Alfred Y. Cho ,  Deborah L. Sivco ,  Daryoosh Vakhshoori

    发明人： Alfred Y. Cho ,  Deborah L. Sivco ,  Daryoosh Vakhshoori

    IPC分类号： G02B6/12 ,  G02B6/30 ,  G02B6/42 ,  G02B27/09 ,  H01S5/00

    CPC分类号： G02B6/42 ,  G02B19/0028 ,  G02B19/0052 ,  G02B27/09 ,  G02B27/0994 ,  G02B6/4206 ,  G02B2006/12195 ,  G02B6/305 ,  Y10S438/978

    摘要： This invention embodies an integrated optical package including an optical component having an asymmetric modal output, and a lens integrated with the component for coupling to another optical component having a large modal area. The coupling is achieved by the use of a Polymeric Elongated Waveguide Emulating (PEWE) lens. In the exemplary embodiment the first optical component is a modulator, and the other optical component is an optical fiber. A facet of the modulator is etched by reactive ion etching (RIE) which allows integration of the PEWE lens on a common substrate. The lens is manufactured using a polymer film on a dielectric cladding layer. The fabrication relies on the remelt and reflow properties of polymer films to provide a smooth adiabatic mode contraction from a circular (optical fiber) mode (.apprxeq.6 .mu.m in diameter) to a semiconductor mode (.apprxeq.1 .mu.m) over a length of 250 .mu.m. The PEWE lens permits coupling with an insertion loss of 0.5 dB and 80 percent coupling efficiency, even though the lens is butt-coupled to a fiber without any external lens. The PEWE lens allows the realization of better than 80 percent direct fiber butt-coupling efficiencies to semiconductor lasers, photodetectors, optical modulators, switches and amplifiers with a simultaneous order of magnitude relaxation of the alignment tolerances typically needed for the coupling of semiconductor devices with single-mode fibers.