HIGH DENSITY PIXELATED LED AND DEVICES AND METHODS THEREOF

    公开(公告)号:US20170294417A1

    公开(公告)日:2017-10-12

    申请号:US15399729

    申请日:2017-01-05

    Applicant: Cree, Inc.

    Abstract: At least one array of LEDs (e.g., in a flip chip configuration) is supported by a substrate having a light extraction surface overlaid with at least one lumiphoric material. Light segregation elements registered with gaps between LEDs are configured to reduce interaction between emissions of different LEDs and/or lumiphoric material regions to reduce scattering and/or optical crosstalk, thereby preserving pixel-like resolution of the resulting emissions. Light segregation elements may be formed by mechanical sawing or etching to define grooves or recesses in a substrate, and filling the grooves or recesses with light-reflective or light-absorptive material. Light segregation elements external to a substrate may be defined by photolithographic patterning and etching of a sacrificial material, and/or by 3D printing.

    Light emitting devices having current reducing structures
    5.
    发明授权
    Light emitting devices having current reducing structures 有权
    具有电流还原结构的发光器件

    公开(公告)号:US08704240B2

    公开(公告)日:2014-04-22

    申请号:US13856928

    申请日:2013-04-04

    Applicant: Cree, Inc.

    Abstract: A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer and an active region between the p-type semiconductor layer and the n-type semiconductor layer. A bond pad is provided on one of the p-type semiconductor layer or the n-type semiconductor layer, opposite the active region, the bond pad being electrically connected to the one of the p-type semiconductor layer or the n-type semiconductor layer. A conductive finger extends from and is electrically connected to the bond pad. A reduced conductivity region is provided in the light emitting device that is aligned with the conductive finger. A reflector may also be provided between the bond pad and the reduced conductivity region. A reduced conductivity region may also be provided in the light emitting device that is not aligned with the bond pad.

    Abstract translation: 发光器件包括p型半导体层,n型半导体层和p型半导体层和n型半导体层之间的有源区。 在与有源区相对的p型半导体层或n型半导体层之一上设置接合焊盘,所述接合焊盘与p型半导体层或n型半导体层中的一者电连接 。 导电指状物从接合焊盘延伸并与其电连接。 在与导电指状物对准的发光器件中设置降低的导电性区域。 还可以在接合焊盘和减小的导电区域之间设置反射器。 还可以在不与接合焊盘对准的发光器件中提供降低的导电性区域。

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