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公开(公告)号:US10453827B1
公开(公告)日:2019-10-22
申请号:US15993540
申请日:2018-05-30
Applicant: Cree, Inc.
Inventor: Christopher P. Hussell , Alan Wellford Dillon , Peter Scott Andrews
IPC: H01L25/075 , H01L33/58 , H01L33/62 , H01L33/52
Abstract: Light emitting diode (LED) devices and systems include a superstrate (e.g., a light-transmissive layer), LEDs attached to the superstrate at a die-attach layer formed thereon, and an encapsulant layer formed over and/or around the LEDs with a non-reflective or clear material. A method for producing LED devices and systems includes providing a superstrate with a die-attach layer formed thereon, attaching LEDs to the superstrate at the die-attach layer, forming conductive surfaces on a side of the LED opposite the die-attach layer, dispensing an encapsulant layer to at least partially encapsulate the LEDs, and forming one or more metal traces to electrically interconnect the conductive surfaces of at least some of the LEDs with each other.
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公开(公告)号:US09634197B2
公开(公告)日:2017-04-25
申请号:US13801743
申请日:2013-03-13
Applicant: Cree, Inc.
Inventor: Michael John Bergmann , Kevin Haberern , Alan Wellford Dillon
IPC: H01L29/18 , H01L33/50 , H01L33/60 , H01L23/00 , H01L33/22 , H01L33/00 , H01L33/40 , H01L33/62 , H01L33/64
Abstract: An LED wafer includes LED dies on an LED substrate. The LED wafer and a carrier wafer are joined. The LED wafer that is joined to the carrier wafer is shaped. Wavelength conversion material is applied to the LED wafer that is shaped. Singulation is performed to provide multiple LED dies that are joined to a single carrier die. The multiple LED dies on the single carrier die are connected in series and/or in parallel by interconnection in the LED dies and/or in the single carrier die. The singulated devices may be mounted in an LED fixture to provide high light output per unit area. Related devices and fabrication methods are described.
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公开(公告)号:US20170271561A1
公开(公告)日:2017-09-21
申请号:US15493735
申请日:2017-04-21
Applicant: Cree, Inc.
Inventor: Michael John Bergmann , Kevin Haberern , Alan Wellford Dillon
IPC: H01L33/50
Abstract: An LED wafer includes LED dies on an LED substrate. The LED wafer and a carrier wafer are joined. The LED wafer that is joined to the carrier wafer is shaped. Wavelength conversion material is applied to the LED wafer that is shaped. Singulation is performed to provide multiple LED dies that are joined to a single carrier die. The multiple LED dies on the single carrier die are connected in series and/or in parallel by interconnection in the LED dies and/or in the single carrier die. The singulated devices may be mounted in an LED fixture to provide high light output per unit area. Related devices and fabrication methods are described.
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公开(公告)号:US09666764B2
公开(公告)日:2017-05-30
申请号:US13801743
申请日:2013-03-13
Applicant: Cree, Inc.
Inventor: Michael John Bergmann , Kevin Haberern , Alan Wellford Dillon
IPC: H01L29/18 , H01L33/50 , H01L33/60 , H01L23/00 , H01L33/22 , H01L33/00 , H01L33/40 , H01L33/62 , H01L33/64
CPC classification number: H01L33/50 , H01L24/14 , H01L24/81 , H01L24/94 , H01L27/156 , H01L33/0079 , H01L33/0095 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/44 , H01L33/486 , H01L33/60 , H01L33/62 , H01L33/64 , H01L2224/13013 , H01L2224/13014 , H01L2224/131 , H01L2224/13147 , H01L2224/13639 , H01L2224/1403 , H01L2224/14051 , H01L2224/1411 , H01L2224/14131 , H01L2224/14155 , H01L2224/14177 , H01L2224/81193 , H01L2224/81203 , H01L2224/81805 , H01L2224/81895 , H01L2224/94 , H01L2924/00 , H01L2924/00014 , H01L2924/0002 , H01L2924/01322 , H01L2924/014 , H01L2924/12041 , H01L2924/12042 , H01L2933/0016 , H01L2933/0033 , H01L2224/81
Abstract: An LED wafer includes LED dies on an LED substrate. The LED wafer and a carrier wafer are joined. The LED wafer that is joined to the carrier wafer is shaped. Wavelength conversion material is applied to the LED wafer that is shaped. Singulation is performed to provide multiple LED dies that are joined to a single carrier die. The multiple LED dies on the single carrier die are connected in series and/or in parallel by interconnection in the LED dies and/or in the single carrier die. The singulated devices may be mounted in an LED fixture to provide high light output per unit area. Related devices and fabrication methods are described.
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