公开(公告)号：US06337218B1

公开(公告)日：2002-01-08

申请号：US09321921

申请日：1999-05-28

申请人： Cyprian E. Uzoh ,  Stephen A. Cohen ,  Arnold Halperin

发明人： Cyprian E. Uzoh ,  Stephen A. Cohen ,  Arnold Halperin

IPC分类号： H01L2166

CPC分类号： G01R1/06705 ,  G01R31/2831 ,  G01R31/311 ,  G01R31/312

摘要： An apparatus for testing structures in semiconductor wafers. The apparatus includes at least one test probe. At least one tool measures and controls deceleration of the at least one test probe as it approaches a surface of a structure in the semiconductor wafer.

摘要翻译： 一种用于测试半导体晶片结构的装置。 该装置包括至少一个测试探针。 当所述至少一个测试探针接近半导体晶片中的结构的表面时，至少一个工具测量和控制所述至少一个测试探针的减速度。

公开(公告)号：US07416975B2

公开(公告)日：2008-08-26

申请号：US11232718

申请日：2005-09-21

申请人： Cyprian E. Uzoh ,  Bulent M. Basol ,  Hung-Ming Wang ,  Homayoun Talieh

发明人： Cyprian E. Uzoh ,  Bulent M. Basol ,  Hung-Ming Wang ,  Homayoun Talieh

IPC分类号： H01L21/44

CPC分类号： H01L21/2885 ,  C25D5/02 ,  C25D7/123 ,  C25D17/005

摘要： A method is provided for manufacturing removable contact structures on the surface of a substrate to conduct electricity from a contact member to the surface during electroprocessing. The method comprises forming a conductive layer on the surface. A predetermined region of the conductive layer is selectively coated by a contact layer so that the contact member touches the contact layer as the electroprocessing is performed on the conductive layer.

摘要翻译： 提供了一种用于在基板的表面上制造可移除接触结构以在电加工期间将电从接触构件传导到表面的方法。 该方法包括在表面上形成导电层。 导电层的预定区域被接触层选择性地涂覆，使得当在导电层上进行电处理时，接触构件接触接触层。

公开(公告)号：US06861354B2

公开(公告)日：2005-03-01

申请号：US10358565

申请日：2003-02-04

申请人： Cyprian E. Uzoh ,  Homayoun Talieh ,  Bulent M. Basol

发明人： Cyprian E. Uzoh ,  Homayoun Talieh ,  Bulent M. Basol

IPC分类号： H01L21/288 ,  H01L21/768 ,  H01L23/532 ,  H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/2885 ,  H01L21/7684 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76877 ,  H01L23/53228 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for forming conductor structures on a semiconductor wafer is provided. The method begins with depositing a seed layer having a substantially consistent thickness over a barrier layer that covers the features and the field regions among them. The process continues with electrodepositing a planar copper layer on the seed layer and subsequently electroetching it until a thinned seed layer remains over the field regions. When another layer of planar copper is deposited on the remaining copper in the features and on the thinned seed layer on the field regions, this structure minimizes stress related defects in the features which occur during a following anneal process.

摘要翻译： 提供了一种在半导体晶片上形成导体结构的方法。 该方法开始于在覆盖其中的特征和场区域的阻挡层上沉积具有基本上一致的厚度的种子层。 该过程继续在种子层上电沉积平面铜层，随后电蚀，直到变薄的种子层保留在场区域上。 当另一层平面铜沉积在特征中的剩余铜上以及在场区上的薄化种子层上时，该结构使得在随后的退火过程中发生的特征中的应力相关缺陷最小化。

公开(公告)号：US06777338B2

公开(公告)日：2004-08-17

申请号：US10051755

申请日：2002-01-15

申请人： Jalal Ashjaee ,  Rimma Volodarsky ,  Cyprian E. Uzoh ,  Bulent M. Basol ,  Homayoun Talieh

发明人： Jalal Ashjaee ,  Rimma Volodarsky ,  Cyprian E. Uzoh ,  Bulent M. Basol ,  Homayoun Talieh

IPC分类号： H01L21461

CPC分类号： H01L21/6708 ,  H01L21/2885 ,  H01L21/32134

摘要： The present invention provides at least one nozzle that sprays a rotating workpiece with an etchant at an edge thereof. The at least one nozzle is located in an upper chamber of a vertically configured processing subsystem that also includes mechanisms for plating, cleaning and drying in upper and lower chambers.

摘要翻译： 本发明提供了至少一个喷嘴，其在其边缘处用蚀刻剂喷射旋转的工件。 至少一个喷嘴位于垂直配置的处理子系统的上部室中，其还包括用于上部和下部室中的电镀，清洁和干燥的机构。

公开(公告)号：US06716084B2

公开(公告)日：2004-04-06

申请号：US10043656

申请日：2002-01-08

申请人： Bulent M. Basol ,  Cyprian E. Uzoh ,  Konstantin Volodarsky

发明人： Bulent M. Basol ,  Cyprian E. Uzoh ,  Konstantin Volodarsky

IPC分类号： B24B100

CPC分类号： B24B37/30 ,  H01L21/6838

摘要： The present invention uses some type of inflatable membrane during processing to establish a vacuum and/or provide a resilient cushion on which the backside of the wafer can rest. In one aspect, the present invention provides an outer vacuum that allow for attachment of the wafer to the carrier head during processing, and also provides an inner inflatable membrane that provides a resilient cushion on which the backside of the wafer can rest during processing. In other aspects, the present invention provides a membrane that is displaceable with a vacuum within certain cavity regions to provide for attachment of the wafer to the wafer carrier.

摘要翻译： 本发明在处理过程中使用某种类型的可膨胀膜来建立真空和/或提供弹性垫，其中晶片的背面可以在其上放置。 在一个方面，本发明提供一种外部真空，其允许在处理期间将晶片附着到承载头，并且还提供内部可充气的膜，其提供弹性垫，在加工过程中，晶片的背面可以在其上保持。 在其他方面，本发明提供了一种膜，其可以在某些腔区域内以真空位移，以提供晶片与晶片载体的连接。

公开(公告)号：US06685814B2

公开(公告)日：2004-02-03

申请号：US09864625

申请日：2001-05-24

申请人： Cyprian E. Uzoh ,  Hariklia Deligianni ,  John O. Dukovic

发明人： Cyprian E. Uzoh ,  Hariklia Deligianni ,  John O. Dukovic

IPC分类号： C25D508

CPC分类号： C25D5/08 ,  C25D7/123 ,  C25D17/001 ,  C25D17/008

摘要： An apparatus and method for an electrodeposition or electroetching system. A thin metal film is deposited or etched by electrical current through an electrolytic bath flowing toward and in contact with a target on which the film is disposed. Uniformity of deposition or etching is promoted, particularly at the edge of the target film, by, baffle and shield members through which the bath passes as it flows toward the target. The baffle has a plurality of openings disposed to control the localized current flow across the cross section of the workpiece/wafer. Disposed near the edge of the target, the shield member shapes the potential field and the current line so that it is uniform.

摘要翻译： 电沉积或电蚀系统的装置和方法。 通过电流沉积或蚀刻薄的金属膜，所述电解液流向与其上设置有膜的靶接触并与其接触的电解槽。 在目标膜边缘，通过挡板和屏蔽构件促进沉积或蚀刻的均匀性，当浴流向靶时通过该挡板和屏蔽构件通过。 挡板具有多个开口，其设置成控制横跨工件/晶片横截面的局部电流。 设置在目标边缘附近，屏蔽构件使势场和当前线形成均匀。

公开(公告)号：US06600230B2

公开(公告)日：2003-07-29

申请号：US09899923

申请日：2001-07-09

申请人： Cyprian E. Uzoh ,  Peter S. Locke

发明人： Cyprian E. Uzoh ,  Peter S. Locke

IPC分类号： H01L2348

CPC分类号： H01L21/76873 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76864 ,  H01L21/76877 ,  Y10T428/12 ,  Y10T428/12528 ,  Y10T428/239 ,  Y10T428/24917

摘要： A process for plating metal in submicron structures. A seedlayer is deposited on surfaces of submicron structures. The seedlayer is annealed at a temperature of about 80° C. to about 130° C. Metal is plated on the seedlayer.

摘要翻译： 在亚微米结构中电镀金属的方法。 种子层沉积在亚微米结构的表面上。 种子层在约80℃至约130℃的温度下退火。将金属镀在种子层上。

公开(公告)号：US06258717B1

公开(公告)日：2001-07-10

申请号：US09363741

申请日：1999-07-30

申请人： Cyprian E. Uzoh ,  Peter S. Locke

发明人： Cyprian E. Uzoh ,  Peter S. Locke

IPC分类号： H01L2144

CPC分类号： H01L21/76873 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76864 ,  H01L21/76877 ,  Y10T428/12 ,  Y10T428/12528 ,  Y10T428/239 ,  Y10T428/24917

摘要： A process for plating metal in submicron structures. A seedlayer is deposited on surfaces of submicron structures. The seedlayer is annealed at a temperature of about 80° C. to about 130° C. Metal is plated on the seedlayer.

公开(公告)号：US6123825A

公开(公告)日：2000-09-26

申请号：US203926

申请日：1998-12-02

申请人： Cyprian E. Uzoh ,  Steven H. Boettcher ,  Patrick W. DeHaven ,  Christopher C. Parks ,  Andrew H. Simon

发明人： Cyprian E. Uzoh ,  Steven H. Boettcher ,  Patrick W. DeHaven ,  Christopher C. Parks ,  Andrew H. Simon

IPC分类号： H01L21/3205 ,  C25D5/10 ,  C25D7/00 ,  C25D7/12 ,  H01L21/288 ,  H01L21/768 ,  H01L23/52 ,  C23C28/00 ,  C23C28/02 ,  C25D5/02 ,  C25D5/34 ,  C25D5/50

CPC分类号： C25D5/10 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/76838 ,  H01L21/76877 ,  Y10T428/12535 ,  Y10T428/12646 ,  Y10T428/1291

摘要： An electromigration-resistant copper film structure and the process for forming the structure. The film structure contains a high impurity content, is resistant to grain growth, and possesses superior metallurgical, thermo-mechanical, and electrical properties. The process comprises the steps of: (a) providing a seed layer at least indirectly on a substrate, the seed layer having an exposed surface; (b) immersing the substrate in a plating solution; (c) electrodepositing a copper-containing film on the exposed surface of the seed layer, the copper-containing film having a first surface; (d) maintaining the substrate in an immersed state within the plating solution; (e) electrodepositing a further copper-containing film from the plating solution onto the first surface; (f) removing the substrate from the plating solution; and (g) drying the substrate.

摘要翻译： 一种抗电镀铜膜结构和形成该结构的方法。 膜结构含有高杂质含量，耐晶粒生长，具有优良的冶金，热机械和电学性能。 该方法包括以下步骤：（a）至少间接地在基底上提供种子层，籽晶层具有暴露表面; （b）将基板浸入电镀液中; （c）在种子层的暴露表面上电沉积含铜膜，所述含铜膜具有第一表面; （d）将所述基板保持在所述电镀液中的浸渍状态; （e）将另外的含铜膜从所述电镀溶液电沉积到所述第一表面上; （f）从电镀液中除去基板; 和（g）干燥基材。

公开(公告)号：US07670473B1

公开(公告)日：2010-03-02

申请号：US11786948

申请日：2007-04-12

申请人： Cyprian E. Uzoh ,  Bulent M. Basol

发明人： Cyprian E. Uzoh ,  Bulent M. Basol

IPC分类号： B23H5/08 ,  C25D5/08 ,  C25D17/00

CPC分类号： B24B37/16 ,  C25D5/02 ,  C25D5/06 ,  C25D5/22 ,  C25D7/123 ,  C25D17/14 ,  C25F7/00 ,  H01L21/2885 ,  H01L21/3212 ,  H01L21/6715 ,  H01L21/76838 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

摘要： The present invention is directed to a top surface of a workpiece surface influencing device and a method of using the same. The top surface of the workpiece surface influencing device is adapted for use in an electrochemical mechanical processing apparatus in which a solution becomes disposed onto a conductive surface of a workpiece and electrochemical mechanical processing of the conductive surface is performed while relative movement and physical contact exists between the top surface and the conductive surface. The top surface comprises a ceramic material that presents a substantially planar contact area to the conductive surface, the ceramic material having a hardness greater than that of the conductive surface. A plurality of channels are formed through the top surface.

摘要翻译： 本发明涉及工件表面影响装置的顶面及其使用方法。 工件表面影响装置的上表面适用于电化学机械处理装置，其中溶液设置在工件的导电表面上，并且执行导电表面的电化学机械处理，同时存在相对运动和物理接触之间的相互运动和物理接触 顶表面和导电表面。 顶表面包括陶瓷材料，其向导电表面提供基本平坦的接触面积，陶瓷材料的硬度大于导电表面的硬度。 通过上表面形成多个通道。