Semiconductor packaging structure

    公开(公告)号:US10453956B2

    公开(公告)日:2019-10-22

    申请号:US16436939

    申请日:2019-06-11

    Abstract: A semiconductor packaging structure includes a chip, a first pin, a second pin, and a third pin. The chip includes a first surface, a second surface, a first power switch, and a second switch, and both the first power switch and the second switch include a first terminal and a second terminal. The second surface of the chip is opposite to the first surface of the chip. The first pin does not contact to the second pin. The first terminal of the first power switch of the chip is coupled to the first pin, and the second terminal of the first power switch of the chip is coupled to the third pin. The first terminal of the second power switch of the chip is coupled to the third pin, and the second terminal of the second power switch of the chip is coupled to the second pin.

    Power module package
    2.
    发明授权

    公开(公告)号:US10096562B2

    公开(公告)日:2018-10-09

    申请号:US15209777

    申请日:2016-07-14

    Abstract: A power module package includes a single-layered circuit board, a first electronic component, and a second electronic component. The single-layered circuit board includes an insulating substrate and a conductive layer thereon. A bottom surface of the conductive layer touches a top surface of the insulating substrate. The insulating substrate has plural first openings to allow the conductive layer to be exposed from the bottom surface of the insulating substrate. The first electronic component is disposed on a top surface of the conductive layer. The second electronic component is disposed on the bottom surface of the insulating substrate and received in the first openings. The second electronic component is connected to the conductive layer via the first openings. At least one of the first electronic component and the second electronic component is a bare die.

    Layout of power converter
    3.
    发明授权
    Layout of power converter 有权
    功率转换器布局

    公开(公告)号:US09559606B2

    公开(公告)日:2017-01-31

    申请号:US14962074

    申请日:2015-12-08

    Inventor: Juncheng Lu Zeng Li

    CPC classification number: H02M7/003 H02M7/538 H02M7/797

    Abstract: A layout of a switching power converter, wherein the switching power converter includes: a capacitor unit receiving or outputting DC voltage; six power transistor units transforming the DC voltage to the AC voltage or the AC voltage to the DC voltage; and a carrier board with the capacitor unit and the six power transistor units on. The layout of the switching power converter includes a first commutation loop and a second commutation loop, in which the six power transistor units are arranged on the same surface of the carrier board. In order to ensure the first commutation loop and the second commutation loop as short as possible, the fifth power transistor unit is located at a middle position of the carrier board, surrounded by the other five power transistor units as closely as possible.

    Abstract translation: 一种开关电源转换器的布局,其中开关电源转换器包括:接收或输出直流电压的电容器单元; 六个功率晶体管单元将DC电压转换为AC电压或AC电压至DC电压; 和带有电容器单元和六个功率晶体管单元的载板。 开关功率转换器的布局包括第一换向环和第二换向环,其中六个功率晶体管单元布置在载板的同一表面上。 为了确保第一换向回路和第二换向回路尽可能短,第五功率晶体管单元位于载板的中间位置,由其它五个功率晶体管单元尽可能靠近地围绕。

    Semiconductor packaging structure and semiconductor power device thereof

    公开(公告)号:US10347758B2

    公开(公告)日:2019-07-09

    申请号:US15647278

    申请日:2017-07-12

    Abstract: A semiconductor packaging structure includes a chip, a first pin, a second pin, and a third pin. The chip includes a first surface, a second surface, a first power switch, and a second switch, and both the first power switch and the second switch include a first terminal and a second terminal. The second surface of the chip is opposite to the first surface of the chip. The first pin does not contact to the second pin. The first terminal of the first power switch of the chip is coupled to the first pin, and the second terminal of the first power switch of the chip is coupled to the third pin. The first terminal of the second power switch of the chip is coupled to the third pin, and the second terminal of the second power switch of the chip is coupled to the second pin.

    Power switch circuit
    5.
    发明授权

    公开(公告)号:US10020731B2

    公开(公告)日:2018-07-10

    申请号:US14959071

    申请日:2015-12-04

    CPC classification number: H02M3/158 H02M2001/0054 Y02B70/1491

    Abstract: A power switch circuit includes at least one switch unit including at least one first switch and one second switch which are connected in parallel. A turning-on loss of the first switch is smaller than a turning-on loss of the second switch, a turning-off loss of the first switch is larger than a turning-off loss of the second switch; during one controlling period of the switch unit, when the switch unit is controlled to be turned on, a moment when the first switch is turned on is controlled to be earlier than a moment when the second switch is turned on; and when the switch unit is controlled to be turned off, a moment when the first switch is turned off is controlled to be earlier than a moment when the second switch is turned off.

    Cascade switch device and voltage protection method

    公开(公告)号:US09973185B2

    公开(公告)日:2018-05-15

    申请号:US14813140

    申请日:2015-07-30

    CPC classification number: H03K17/0828 H03K17/567 H03K17/6871 H03K2017/6875

    Abstract: A cascode switch device includes a cascode circuit, which includes a first switch and a second switch, and a protection circuit. The protection circuit is coupled between the first switch and the second switch. A first leakage current passing through the protection circuit is greater than or equal to a difference between a second leakage current and a third leakage current, and is smaller than an upper limit value of a leakage current of the cascode circuit. An upper limit value of a withstanding voltage is present between the first terminal and the control terminal of the first switch. When the first switch operates at the upper limit value of the withstanding voltage, the second leakage current is an upper limit value of a leakage current passing through the first switch, and the third leakage current is a lower limit value of a leakage current passing through the second switch.

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