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    Pattern treatment methods
    1.
    发明授权
    Pattern treatment methods 有权

    公开(公告)号：US10162265B2

    公开(公告)日：2018-12-25

    申请号：US15296592

    申请日：2016-10-18

    Applicant: Rohm and Haas Electronic Materials LLC ,  Dow Global Technologies LLC

    Inventor： Jong Keun Park ,  Mingqi Li ,  Amy M. Kwok ,  Phillip D. Hustad

    IPC: G03F7/40 ,  C09D125/08 ,  C09D133/10 ,  G03F7/039 ,  G03F7/11 ,  H01L21/02 ,  H01L21/027 ,  C08F297/02 ,  G03F7/32 ,  H01L21/033

    Abstract: Pattern treatment methods comprise: (a) providing a semiconductor substrate comprising a patterned feature on a surface thereof; (b) applying a pattern treatment composition to the patterned feature, wherein the pattern treatment composition comprises a polymer comprising a surface attachment group for forming a bond with a surface of the patterned feature and a solvent, and wherein the pattern treatment composition is free of crosslinkers; (c) removing residual pattern treatment composition from the substrate with a first rinse agent, leaving a coating of the polymer over and bonded to the surface of the patterned feature; and (d) rinsing the polymer-coated patterned feature with a second rinse agent that is different from the first rinse agent, wherein the polymer has a solubility that is greater in the first rinse agent than in the second rinse agent. The methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.

    PATTERN TREATMENT METHODS
    4.
    发明申请
    PATTERN TREATMENT METHODS 有权
    模式处理方法

    公开(公告)号：US20160357110A1

    公开(公告)日：2016-12-08

    申请号：US15172246

    申请日：2016-06-03

    Applicant: Dow Global Technologies LLC ,  Rohm and Haas Electronic Materials LLC

    Inventor： Huaxing Zhou ,  Mingqi Li ,  Vipul Jain ,  Jong Keun Park ,  Phillip D. Hustad ,  Jin Wuk Sung

    IPC: G03F7/40 ,  G03F7/38 ,  G03F7/32 ,  G03F7/20

    CPC classification number: G03F7/405 ,  C08F293/00 ,  C09D153/00 ,  G03F7/002 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/165 ,  G03F7/168 ,  G03F7/20 ,  G03F7/325 ,  G03F7/40 ,  H01L21/0274

    Abstract: Pattern treatment methods comprise: (a) providing a semiconductor substrate comprising a patterned feature on a surface thereof; (b) applying a pattern treatment composition to the patterned feature, wherein the pattern treatment composition comprises a block copolymer and a solvent, wherein the block copolymer comprises a first block and a second block, wherein the first block comprises a unit formed from a first monomer comprising an ethylenically unsaturated polymerizable group and a hydrogen acceptor group, wherein the hydrogen acceptor group is a nitrogen-containing group, and the second block comprises a unit formed from a second monomer comprising an ethylenically unsaturated polymerizable group and a cyclic aliphatic group; and (c) rinsing residual pattern treatment composition from the substrate, leaving a portion of the block copolymer bonded to the patterned feature. The methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.

    Abstract translation: 图案处理方法包括：（a）在其表面上提供包括图案化特征的半导体衬底; （b）将图案处理组合物施加到所述图案化特征，其中所述图案处理组合物包含嵌段共聚物和溶剂，其中所述嵌段共聚物包含第一嵌段和第二嵌段，其中所述第一嵌段包含由第一嵌段 包含烯属不饱和可聚合基团和氢受体基团的单体，其中所述氢受体基团是含氮基团，并且所述第二嵌段包含由包含烯键式不饱和可聚合基团和环状脂族基团的第二单体形成的单元; 和（c）从基材漂洗残余图案处理组合物，使一部分嵌段共聚物结合到图案化特征。 该方法在用于提供高分辨率图案的半导体器件的制造中具有特别的适用性。

    METHODS OF FORMING ELECTRONIC DEVICES
    7.
    发明申请
    METHODS OF FORMING ELECTRONIC DEVICES 有权
    形成电子器件的方法

    公开(公告)号：US20160189953A1

    公开(公告)日：2016-06-30

    申请号：US14972522

    申请日：2015-12-17

    Applicant: Dow Global Technologies LLC ,  Rohm and Haas Electronic Materials LLC

    Inventor： Jong Keun Park ,  Phillip D. Hustad ,  Emad Aqad ,  Mingqi Li ,  Cheng-Bai Xu ,  Peter Trefonas, III ,  James W. Thackeray

    IPC: H01L21/02

    CPC classification number: H01L21/02359 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/02203 ,  H01L21/02343 ,  H01L21/3105 ,  H01L21/76826

    Abstract: Methods of forming an electronic device comprise: (a) providing a semiconductor substrate comprising a porous feature on a surface thereof; (b) applying a composition over the porous feature, wherein the composition comprises a polymer and a solvent, wherein the polymer comprises a repeat unit of the following general formula (I): wherein: Ar1, Ar2, Ar3 and Ar4 independently represent an optionally substituted divalent aromatic group; X1 and X2 independently represent a single bond, —O—, —C(O)—, —C(O)O—, —OC(O)—, —C(O)NR1—, —NR2C(O)—, —S—, —S(O)—, —SO2— or an optionally substituted C1-20 divalent hydrocarbon group, wherein R1 and R2 independently represent H or a C1-20 hydrocarbyl group; m is 0 or 1; n is 0 or 1; and o is 0 or 1; and (c) heating the composition; wherein the polymer is disposed in pores of the porous feature. The methods find particular applicability in the manufacture of semiconductor devices for forming low-k and ultra-low-k dielectric materials.

    Abstract translation: 形成电子器件的方法包括：（a）提供在其表面上包括多孔特征的半导体衬底; （b）在多孔特征上施用组合物，其中所述组合物包含聚合物和溶剂，其中所述聚合物包含以下通式（I）的重复单元：其中：Ar1，Ar2，Ar3和Ar4独立地表示任选地 取代二价芳基; X1和X2独立地表示单键，-O - ， - C（O） - ， - C（O）O-，-OC（O） - ， - C（O）NR 1 - ，-NR 2 C（O） -S - ， - S（O） - ， - SO 2 - 或任选取代的C 1-20二价烃基，其中R 1和R 2独立地表示H或C 1-20烃基; m为0或1; n为0或1; o为0或1; 和（c）加热组合物; 其中所述聚合物设置在所述多孔特征的孔中。 该方法在用于形成低k和超低k电介质材料的半导体器件的制造中具有特别的适用性。

    PHOTOLITHOGRAPHIC METHODS
    8.
    发明申请
    PHOTOLITHOGRAPHIC METHODS 有权
    光刻方法

    公开(公告)号：US20160187782A1

    公开(公告)日：2016-06-30

    申请号：US14971092

    申请日：2015-12-16

    Applicant: Dow Global Technologies LLC ,  Rohm and Haas Electronic Materials LLC

    Inventor： Phillip D. Hustad ,  Jong Keun Park

    IPC: G03F7/40 ,  H01L21/311 ,  H01L21/02 ,  H01L21/027

    CPC classification number: H01L21/0206 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/325 ,  G03F7/405 ,  H01L21/0273 ,  H01L21/31144

    Abstract: Provided are photolithographic methods. The method comprise: (a) providing a semiconductor substrate comprising an organic layer to be etched; (b) applying a layer of a photoresist composition directly on the organic layer, wherein the photoresist composition comprises: a resin comprising an acid cleavable leaving group, the cleavage of which forms an acid group and/or an alcohol group; a photoacid generator; and a solvent; (c) exposing the photoresist layer to activating radiation through a patterned photomask; (d) heating the photoresist layer, wherein acid generated by the acid generator causes cleavage of the acid cleavable leaving group, thereby forming the acid group and/or the alcohol group; (d) developing the exposed photoresist composition layer with an organic solvent developer to form a negative resist pattern comprising the acid group and/or the alcohol group; (e) applying a silicon-containing composition over the resist pattern, wherein the composition comprises a silicon-containing polymer and a solvent and is free of crosslinkers; (f) rinsing residual silicon-containing composition from the substrate, leaving a portion of the silicon-containing polymer on a surface of the resist pattern; and (g) selectively etching the organic layer. The methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.

    Abstract translation: 提供光刻方法。 该方法包括：（a）提供包括待蚀刻的有机层的半导体衬底; （b）将光致抗蚀剂组合物层直接施加在有机层上，其中光致抗蚀剂组合物包含：包含可酸切割离去基团的树脂，其切割形成酸基和/或醇基; 光致酸发生器; 和溶剂; （c）通过图案化的光掩模曝光光致抗蚀剂层以激活辐射; （d）加热光致抗蚀剂层，其中由酸发生剂产生的酸导致酸可裂解的离去基团的裂解，从而形成酸基和/或醇基; （d）用有机溶剂显影剂显影曝光的光致抗蚀剂组合物层以形成包含酸基和/或醇基的负抗蚀剂图案; （e）在抗蚀剂图案上涂覆含硅组​​合物，其中所述组合物包含含硅聚合物和溶剂并且不含交联剂; （f）从基材上漂洗剩余的含硅组合物，将一部分含硅聚合物留在抗蚀图案的表面上; 和（g）选择性蚀刻有机层。 该方法在用于提供高分辨率图案的半导体器件的制造中具有特别的适用性。

    COPOLYMER FORMULATION FOR DIRECTED SELF ASSEMBLY, METHODS OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME
    9.
    发明申请
    COPOLYMER FORMULATION FOR DIRECTED SELF ASSEMBLY, METHODS OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME 审中-公开
    用于方向自组装的共聚物配方，其制造方法和包含其的制品

    公开(公告)号：US20160186004A1

    公开(公告)日：2016-06-30

    申请号：US14944473

    申请日：2015-11-18

    Applicant: Rohm and Haas Electronic Materials LLC ,  Dow Global Technologies LLC

    Inventor： Phillip D. Hustad ,  Peter Trefonas, III ,  Shih-Wei Chang

    IPC: C09D153/00 ,  B05D3/00

    CPC classification number: C09D153/00 ,  G03F7/0002 ,  C08L25/04

    Abstract: Disclosed herein is a method comprising disposing upon a substrate a composition comprising a block copolymer; where the block copolymer comprises a first polymer and a second polymer; where the first polymer and the second polymer of the block copolymer are different from each other and the block copolymer forms a phase separated structure; an additive polymer; where the additive polymer comprises a reactive moiety that is operative to react with a substrate upon which it is disposed; and where the additive polymer comprises a homopolymer that is the chemically and structurally the same as one of the polymers in the block copolymer or where the additive polymer comprises a random copolymer that has a preferential interaction with one of the blocks of the block copolymers; and a solvent; and annealing the composition.

    Abstract translation: 本文公开了一种方法，包括在基底上设置包含嵌段共聚物的组合物; 其中所述嵌段共聚物包含第一聚合物和第二聚合物; 其中嵌段共聚物的第一聚合物和第二聚合物彼此不同，并且嵌段共聚物形成相分离结构; 添加剂聚合物; 其中所述添加剂聚合物包含可与其所配置的基底反应的反应性部分; 并且其中所述添加剂聚合物包含与嵌段共聚物中的一种聚合物化学和结构相同的均聚物，或其中所述添加剂聚合物包含与所述嵌段共聚物嵌段之一具有优先相互作用的无规共聚物; 和溶剂; 并退火组合物。

    PORE-FILL COMPOSITIONS
    10.
    发明申请
    PORE-FILL COMPOSITIONS 审中-公开
    PORE-FILL组合物

    公开(公告)号：US20160185984A1

    公开(公告)日：2016-06-30

    申请号：US14972529

    申请日：2015-12-17

    Applicant: Dow Global Technologies LLC ,  Rohm and Haas Electronic Materials LLC

    Inventor： Emad Aqad ,  Jong Keun Park ,  Phillip D. Hustad ,  Mingqi Li ,  Cheng-Bai Xu ,  Peter Trefonas, III ,  James W. Thackeray

    IPC: C09D5/34 ,  C09D161/16 ,  H01L21/02 ,  C09D171/12

    CPC classification number: C09D5/34 ,  C08G65/4012 ,  C08G65/4043 ,  C08G65/485 ,  C09D161/16 ,  C09D171/00 ,  C09D171/12 ,  H01B3/307 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02343

    Abstract: A composition comprising a polymer and a solvent, wherein the polymer comprises: a repeat unit of the following general formula (I): wherein: Ar1, Ar2, Ar3 and Ar4 independently represent an optionally substituted divalent aromatic group; X1 and X2 independently represent a single bond, —O—, —C(O)—, —C(O)O—, —OC(O)—, —C(O)NR1—, —NR2C(O)—, —S—, —S(O)—, —SO2— or an optionally substituted C1-20 divalent hydrocarbon group, wherein R1 and R2 independently represent H or a C1-20 hydrocarbyl group; m is 0 or 1; n is 0 or 1; and o is 0 or 1; and an endcapping group that is free of polymerizable vinyl groups and hydroxyl groups. The compositions find particular applicability in the manufacture of semiconductor devices for forming low-k and ultra-low-k dielectric materials.

    Abstract translation: 一种包含聚合物和溶剂的组合物，其中所述聚合物包含：以下通式（I）的重复单元：其中：Ar1，Ar2，Ar3和Ar4独立地表示任选取代的二价芳族基团; X1和X2独立地表示单键，-O - ， - C（O） - ， - C（O）O-，-OC（O） - ， - C（O）NR 1 - ，-NR 2 C（O） -S - ， - S（O） - ， - SO 2 - 或任选取代的C 1-20二价烃基，其中R 1和R 2独立地表示H或C 1-20烃基; m为0或1; n为0或1; o为0或1; 和不含可聚合乙烯基和羟基的封端基。 该组合物特别适用于制造用于形成低k和超低k电介质材料的半导体器件。

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