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73 条记录 (耗时 0.023 秒)

    Method and a system for sealing an epitaxial silicon layer on a substrate
    1.
    发明授权
    Method and a system for sealing an epitaxial silicon layer on a substrate 失效

    公开(公告)号：US06489220B2

    公开(公告)日：2002-12-03

    申请号：US10140584

    申请日：2002-05-06

    申请人： David K. Carlson ,  Dale R. Du Bois

    发明人： David K. Carlson ,  Dale R. Du Bois

    IPC分类号： H01L2120

    CPC分类号： C30B33/005 ,  C30B29/06 ,  H01L21/31662

    摘要： A system for processing a wafer is provided. Ultraviolet light radiates through a first amount of oxygen gas in an ozone generation chamber so that the first amount of oxygen gas is converted to a first amount of ozone gas. The first amount of ozone gas flows from the ozone generation chamber into a loadlock chamber and a wafer is exposed to the first amount of ozone gas. The ultraviolet light also radiates through a window and then through a second amount of oxygen gas in the loadlock chamber so that the second amount of unconverted gas is converted to a second amount of ozone gas. The wafer held by the wafer holder is also exposed to the second amount of ozone gas.

    Method and a system for sealing an epitaxial silicon layer on a substrate
    2.
    发明授权
    Method and a system for sealing an epitaxial silicon layer on a substrate 失效

    公开(公告)号：US06436194B1

    公开(公告)日：2002-08-20

    申请号：US09788121

    申请日：2001-02-16

    申请人： David K. Carlson ,  Dale R. Du Bois

    发明人： David K. Carlson ,  Dale R. Du Bois

    IPC分类号： C23C1600

    CPC分类号： C30B33/005 ,  C30B29/06 ,  H01L21/31662

    摘要： A system for processing a wafer is provided. Ultraviolet light radiates through a first amount of oxygen gas in an ozone generation chamber so that the first amount of oxygen gas is converted to a first amount of ozone gas. The first amount of ozone gas flows from the ozone generation chamber into a loadlock chamber and a wafer is exposed to the first amount of ozone gas. The ultraviolet light also radiates through a window and then through a second amount of oxygen gas in the loadlock chamber so that the second amount of unconverted gas is converted to a second amount of ozone gas. The wafer held by the wafer holder is also exposed to the second amount of ozone gas.

    In situ cleaning of CVD System exhaust
    3.
    发明授权
    In situ cleaning of CVD System exhaust 有权
    CVD系统排气的原位清洗

    公开(公告)号：US08343317B2

    公开(公告)日：2013-01-01

    申请号：US12244318

    申请日：2008-10-02

    申请人： David K. Carlson

    发明人： David K. Carlson

    IPC分类号： B01J19/08

    CPC分类号： C23C16/4412

    摘要： Embodiments of the invention relate to methods and apparatuses for forming films using CVD. One or more method and apparatus embodiments include preventing the formation of bonds and/or breaking bonds that permit polymers to form in an exhaust line of a CVD apparatus.

    摘要翻译： 本发明的实施例涉及使用CVD形成膜的方法和装置。 一种或多种方法和装置实施方案包括防止在CVD装置的排气管线中形成允许聚合物形成的键和/或断裂键。

    Polymeric coating of substrate processing system components for contamination control
    4.
    发明授权
    Polymeric coating of substrate processing system components for contamination control 有权
    用于污染控制的基底处理系统部件的聚合物涂层

    公开(公告)号：US08337619B2

    公开(公告)日：2012-12-25

    申请号：US12234038

    申请日：2008-09-19

    申请人： David K. Carlson ,  Roger N. Anderson

    发明人： David K. Carlson ,  Roger N. Anderson

    IPC分类号： C23C16/00 ,  C23C16/50 ,  C23F1/00 ,  H01L21/306

    CPC分类号： C23C30/00 ,  B05D5/083 ,  B05D7/14 ,  B05D2350/65 ,  C23C2/26 ,  C23C26/00 ,  C23C28/00 ,  Y10T428/239 ,  Y10T428/263 ,  Y10T428/264 ,  Y10T428/265 ,  Y10T428/3154

    摘要： A method of treating a metal surface of a portion of a substrate processing system to lower a defect concentration near a processed surface of a substrate includes forming a protective coating on the metal surface, wherein the protective coating includes nickel (Ni) and a fluoropolymer. Forming the protective coating on the metal surface can further include forming a nickel layer on the metal surface, impregnating the nickel layer with a fluoropolymer, and removing fluoropolymer from the surface leaving a predominantly nickel surface so the fluoropolymer is predominantly subsurface. A substrate processing system includes a process chamber into which a reactant gas is introduced, a pumping system for removing material from the process chamber, a first component with a protective coating, wherein the protective coating forms a surface of the component which is exposed to an interior of the substrate processing chamber or an interior of the pumping system. The protective coating includes nickel (Ni) and a flouropolymer.

    摘要翻译： 处理基板处理系统的一部分的金属表面以降低基板的加工表面附近的缺陷浓度的方法包括在金属表面上形成保护涂层，其中保护涂层包括镍（Ni）和含氟聚合物。 在金属表面上形成保护涂层还可以包括在金属表面上形成镍层，用含氟聚合物浸渍镍层，以及从表面除去含氟聚合物，留下主要的镍表面，因此含氟聚合物主要是在下表面。 基板处理系统包括其中引入反应气体的处理室，用于从处理室中去除材料的泵送系统，具有保护涂层的第一部件，其中所述保护涂层形成暴露于所述部件的表面 衬底处理室的内部或泵送系统的内部。 保护涂层包括镍（Ni）和氟聚合物。

    LINER ASSEMBLY FOR CHEMICAL VAPOR DEPOSITION CHAMBER
    6.
    发明申请
    LINER ASSEMBLY FOR CHEMICAL VAPOR DEPOSITION CHAMBER 有权
    化学气相沉积室内衬组件

    公开(公告)号：US20120240853A1

    公开(公告)日：2012-09-27

    申请号：US13193570

    申请日：2011-07-28

    申请人： David K. Carlson ,  Mehmet Tugrul Samir ,  Nyi O. Myo

    发明人： David K. Carlson ,  Mehmet Tugrul Samir ,  Nyi O. Myo

    IPC分类号： C23C16/44 ,  C23C16/455

    CPC分类号： C23C16/4404 ,  C23C16/45574 ,  C23C16/45578

    摘要： Embodiments described herein relate to an apparatus and method for lining a processing region within a chamber. In one embodiment, a modular liner assembly for a substrate processing chamber is provided. The modular liner assembly includes a first liner and a second liner, each of the first liner and second liner comprising an annular body sized to be received in a processing volume of a chamber, and at least a third liner comprising a body that extends through the first liner and the second liner, the third liner having a first end disposed in the process volume and a second end disposed outside of the chamber.

    摘要翻译： 本文所述的实施例涉及用于衬里室内的处理区域的装置和方法。 在一个实施例中，提供了一种用于衬底处理室的模块化衬垫组件。 所述模块化衬垫组件包括第一衬垫和第二衬垫，所述第一衬垫和所述第二衬套中的每一个包括尺寸适于容纳在室的处理容积中的环形体，以及至少第三衬套，所述第三衬套包括延伸穿过所述腔体的主体 第一衬里和第二衬套，第三衬里具有设置在处理体积中的第一端和设置在室外的第二端。

    METHODS AND APPARATUS FOR INSITU ANALYSIS OF GASES IN ELECTRONIC DEVICE FABRICATION SYSTEMS
    7.
    发明申请
    METHODS AND APPARATUS FOR INSITU ANALYSIS OF GASES IN ELECTRONIC DEVICE FABRICATION SYSTEMS 有权
    电子设备制造系统气体分析方法与装置

    公开(公告)号：US20120006092A1

    公开(公告)日：2012-01-12

    申请号：US13237144

    申请日：2011-09-20

    申请人： David K. Carlson ,  Satheesh Kuppurao

    发明人： David K. Carlson ,  Satheesh Kuppurao

    IPC分类号： G01N29/02

    CPC分类号： G01N33/0016 ,  Y10T137/85978

    摘要： Systems and methods are disclosed that include adjusting a pressure level of a sample gas in a testing chamber, for example, using a pressurized inert reference gas, and determining a composition of the adjusted sample gas. By adjusting the pressure level of the sample gas, the composition of the sample gas may be determined more accurately than otherwise possible. Numerous other aspects are disclosed.

    摘要翻译： 公开了一种系统和方法，其包括调节测试室中的样品气体的压力水平，例如使用加压的惰性参考气体，以及确定经调节的样品气体的组成。 通过调整样品气体的压力水平，可以比其它方法更准确地确定样品气体的组成。 公开了许多其他方面。

    Methods and apparatus for insitu analysis of gases in electronic device fabrication systems
    8.
    发明授权
    Methods and apparatus for insitu analysis of gases in electronic device fabrication systems 有权
    电子设备制造系统中气体的原位分析方法和装置

    公开(公告)号：US08020427B2

    公开(公告)日：2011-09-20

    申请号：US12833936

    申请日：2010-07-09

    申请人： David K. Carlson ,  Satheesh Kuppurao

    发明人： David K. Carlson ,  Satheesh Kuppurao

    IPC分类号： G01N7/00

    CPC分类号： G01N33/0016 ,  Y10T137/85978

    摘要： Systems and methods are disclosed that include adjusting a pressure level of a sample gas in a testing chamber, for example, using a pressurized inert reference gas, and determining a composition of the adjusted sample gas. By adjusting the pressure level of the sample gas, the composition of the sample gas may be determined more accurately than otherwise possible. Numerous other aspects are disclosed.

    摘要翻译： 公开了一种系统和方法，其包括调节测试室中的样品气体的压力水平，例如使用加压的惰性参考气体，以及确定经调节的样品气体的组成。 通过调整样品气体的压力水平，可以比其它方法更准确地确定样品气体的组成。 公开了许多其他方面。

    Silicon-containing layer deposition with silicon compounds
    9.
    发明授权
    Silicon-containing layer deposition with silicon compounds 有权
    含硅层沉积与硅化合物

    公开(公告)号：US07645339B2

    公开(公告)日：2010-01-12

    申请号：US11549033

    申请日：2006-10-12

    申请人： Kaushal K. Singh ,  Paul B. Comita ,  Lance A. Scudder ,  David K. Carlson

    发明人： Kaushal K. Singh ,  Paul B. Comita ,  Lance A. Scudder ,  David K. Carlson

    IPC分类号： C30B21/04

    CPC分类号： C07F7/0896 ,  C01B33/04 ,  C01B33/107 ,  C07F7/12 ,  C23C16/24 ,  C23C16/30

    摘要： Embodiments of the invention relate to methods for depositing silicon-containing materials on a substrate. In one example, a method for selectively and epitaxially depositing a silicon-containing material is provided which includes positioning and heating a substrate containing a crystalline surface and a non-crystalline surface within a process chamber, exposing the substrate to a process gas containing neopentasilane, and depositing an epitaxial layer on the crystalline surface. In another example, a method for blanket depositing a silicon-containing material is provide which includes positioning and heating a substrate containing a crystalline surface and feature surfaces within a process chamber and exposing the substrate to a process gas containing neopentasilane and a carbon source to deposit a silicon carbide blanket layer across the crystalline surface and the feature surfaces. Generally, the silicon carbide blanket layer contains a silicon carbide epitaxial layer selectively deposited on the crystalline surface.

    摘要翻译： 本发明的实施例涉及在衬底上沉积含硅材料的方法。 在一个实例中，提供了一种用于选择性和外延沉积含硅材料的方法，其包括在处理室内定位和加热含有结晶表面和非结晶表面的基底，将基底暴露于含有新戊硅烷的工艺气体中， 以及在所述晶体表面上沉积外延层。 在另一个实例中，提供了一种用于覆盖沉积含硅材料的方法，其包括定位和加热含有结晶表面的基底和处理室内的特征表面，并将基底暴露于含有新戊硅烷和碳源的工艺气体沉积 跨过结晶表面和特征表面的碳化硅毯层。 通常，碳化硅覆盖层包含选择性地沉积在晶体表面上的碳化硅外延层。