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1.发明授权Polymeric coating of substrate processing system components for contamination control 有权用于污染控制的基底处理系统部件的聚合物涂层公开(公告)号：US08337619B2
公开(公告)日：2012-12-25
申请号：US12234038
申请日：2008-09-19
IPC分类号： C23C16/00 , C23C16/50 , C23F1/00 , H01L21/306
CPC分类号： C23C30/00 , B05D5/083 , B05D7/14 , B05D2350/65 , C23C2/26 , C23C26/00 , C23C28/00 , Y10T428/239 , Y10T428/263 , Y10T428/264 , Y10T428/265 , Y10T428/3154
摘要： A method of treating a metal surface of a portion of a substrate processing system to lower a defect concentration near a processed surface of a substrate includes forming a protective coating on the metal surface, wherein the protective coating includes nickel (Ni) and a fluoropolymer. Forming the protective coating on the metal surface can further include forming a nickel layer on the metal surface, impregnating the nickel layer with a fluoropolymer, and removing fluoropolymer from the surface leaving a predominantly nickel surface so the fluoropolymer is predominantly subsurface. A substrate processing system includes a process chamber into which a reactant gas is introduced, a pumping system for removing material from the process chamber, a first component with a protective coating, wherein the protective coating forms a surface of the component which is exposed to an interior of the substrate processing chamber or an interior of the pumping system. The protective coating includes nickel (Ni) and a flouropolymer.
摘要翻译： 处理基板处理系统的一部分的金属表面以降低基板的加工表面附近的缺陷浓度的方法包括在金属表面上形成保护涂层，其中保护涂层包括镍（Ni）和含氟聚合物。 在金属表面上形成保护涂层还可以包括在金属表面上形成镍层，用含氟聚合物浸渍镍层，以及从表面除去含氟聚合物，留下主要的镍表面，因此含氟聚合物主要是在下表面。 基板处理系统包括其中引入反应气体的处理室，用于从处理室中去除材料的泵送系统，具有保护涂层的第一部件，其中所述保护涂层形成暴露于所述部件的表面 衬底处理室的内部或泵送系统的内部。 保护涂层包括镍（Ni）和氟聚合物。
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公开(公告)号：US06500734B2
公开(公告)日：2002-12-31
申请号：US09325597
申请日：1999-06-02
IPC分类号： H01L2120
CPC分类号： C23C16/45574 , C23C16/45504 , C23C16/45512 , H01L21/67017 , H01L21/67023
摘要： A system for supplying processing fluid to a substrate processing apparatus having walls, the inner surfaces of which define a processing chamber in which a substrate supporting susceptor is located. The system consists of a number of fluid storages, each which stores a separate processing fluid, at least two fluid conduits along which processing fluid flows from the fluid storages to the processing apparatus and a fluid inlet which connects the fluid conduits to the processing chamber. The inlet has a separate fluid passage, corresponding to each of the fluid conduits, formed along it. Each fluid passage opens at or near an inner surface of a wall to define a fluid mixing zone, so that fluid moving along one fluid passage is prevented from mixing with fluid moving along any other passage until reaching the mixing zone.
摘要翻译： 一种用于向具有壁的基板处理装置提供处理流体的系统，其内表面限定了处理室，其中基板支撑基座位于该处理室中。 该系统由许多流体储存器组成，每个流体存储器存储单独的处理流体，至少两个流体管道，处理流体从该流体流体流过流体储存器至处理装置;以及流体入口，其将流体导管连接到处理室。 入口具有与沿其形成的每个流体管道相对应的单独的流体通道。 每个流体通道在壁的内表面处或附近打开以限定流体混合区，从而防止沿着一个流体通道移动的流体与沿着任何其它通道移动的流体混合直至到达混合区。
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公开(公告)号：US06455814B1
公开(公告)日：2002-09-24
申请号：US10007852
申请日：2001-11-07
申请人： Arkadii V. Samoilov , Dale R. DuBois , Lance A. Scudder , Paul B. Comita , Lori D. Washington , David K. Carlson , Roger N. Anderson
发明人： Arkadii V. Samoilov , Dale R. DuBois , Lance A. Scudder , Paul B. Comita , Lori D. Washington , David K. Carlson , Roger N. Anderson
IPC分类号： F27B514
CPC分类号： H01L21/67115 , C23C16/481 , C30B25/105
摘要： An apparatus that includes a reflector having a mirrored surface facing down, a glass structure located beneath the reflector, a susceptor within the glass structure having a surface facing up that is capable of holding a part to be processed, and one or more radiant heat sources directed at and located beneath the glass structure.
摘要翻译： 一种装置，包括具有面向下的镜面的反射器，位于反射器下方的玻璃结构，玻璃结构内的基座具有面向上的表面，其能够保持待加工的部分，以及一个或多个辐射热源 指向并位于玻璃结构下方。
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公开(公告)号：US06315833B1
公开(公告)日：2001-11-13
申请号：US09346657
申请日：1999-07-01
IPC分类号： C23C1600
CPC分类号： H01L21/67748 , H01L21/68728 , H01L21/68792 , Y10T29/49826 , Y10T29/49947
摘要： An apparatus for and method of supporting a substrate such as a semiconductor wafer. Silicon carbide sleeves cover substrate support members such as upwardly extending arms of a substrate carrier which is part of a substrate support assembly. The substrate carrier including the upwardly extending arms holds the substrate spaced apart from a platform such as a susceptor during loading and unloading of a processing chamber. The platform defines apertures through which the arms extend. The arms are vertically movable through the apertures with respect to the platform and engage the substrate at the substrate's edge or alternatively, inwardly from the edge.
摘要翻译： 用于支撑诸如半导体晶片的衬底的装置和方法。 碳化硅套筒覆盖衬底支撑构件，例如作为衬底支撑组件的一部分的衬底载体的向上延伸臂。 包括向上延伸的臂的衬底载体在加工和卸载处理室期间保持衬底与诸如基座的平台间隔开。 平台限定了臂延伸通过的孔。 臂可以相对于平台垂直移动穿过孔，并且在衬底的边缘处或者从边缘向内接合衬底。
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公开(公告)号：US5916369A
公开(公告)日：1999-06-29
申请号：US485058
申请日：1995-06-07
IPC分类号： C23C16/44 , C23C16/455 , C23C16/48 , C30B25/14 , C23C16/00
CPC分类号： C23C16/45504 , C23C16/455 , C23C16/45514 , C23C16/45561 , C23C16/481 , C30B25/14
摘要： A system of supplying processing fluid to a substrate processing apparatus having walls, the inner surfaces of which define a processing chamber in which a substrate supporting susceptor is located. The system consists of a number of fluid storages, each which stores a separate processing fluid, at least two fluid conduits along which processing fluid flows from the fluid storages to the processing apparatus and a fluid inlet which connects the fluid conduits to the processing chamber. The inlet has a separate fluid passage, corresponding to each of the fluid conduits, formed along it. Each fluid passage opens at or near an inner surface of a wall to together define a fluid mixing zone, so that fluid moving along one fluid passage is prevented from mixing with fluid moving along any other passage until reaching the mixing zone.
摘要翻译： 向具有壁的基板处理装置供给处理流体的系统，其内表面限定了处理室，基板支撑基座位于该处理室中。 该系统由许多流体储存器组成，每个流体存储器存储单独的处理流体，至少两个流体管道，处理流体从该流体流体流过流体储存器至处理装置;以及流体入口，其将流体导管连接到处理室。 入口具有与沿其形成的每个流体管道相对应的单独的流体通道。 每个流体通道在壁的内表面处或附近开口以一起限定流体混合区域，从而防止沿着一个流体通道移动的流体与沿着任何其它通道移动的流体混合直到到达混合区域。
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6.发明授权
公开(公告)号：US5855677A
公开(公告)日：1999-01-05
申请号：US831797
申请日：1997-04-08
申请人： David K. Carlson , Norma Riley , Roger N. Anderson
发明人： David K. Carlson , Norma Riley , Roger N. Anderson
CPC分类号： C23C16/4405 , C23C16/481 , C23C16/52 , H01L21/67248 , Y10S438/905
摘要： An apparatus and a concomitant method for controlling coolant (air) flow proximate a reaction chamber within a workpiece processing system such that the temperature of a wall of the reaction chamber is maintained at a predefined target temperature. The target temperature is typically a temperature that optimizes a process concurrently being accomplished within the chamber, e.g., utilizing one temperature during deposition processes and a different temperature during cleaning processes. The apparatus contains a temperature measuring device to measure the temperature of the chamber wall. The measured temperature is compared to the predefined target temperature. A closed loop system controls the air flow proximate the chamber walls such that the measured temperature becomes substantially equal to the target temperature. Air flow control is provided by an air flow control device located within an inlet conduit that supplies air to a shroud for channeling the air past the reaction chamber. The shroud forms a portion of a housing which supports and encloses the reaction chamber.
摘要翻译： 一种用于控制工件处理系统内的反应室附近的冷却剂（空气）流的装置和并发方法，使得反应室的壁的温度保持在预定的目标温度。 目标温度通常是优化室内同时进行的过程的温度，例如在沉积过程期间利用一个温度和在清洁过程期间不同的温度。 该装置包含用于测量室壁温度的温度测量装置。 将测量的温度与预定的目标温度进行比较。 闭环系统控制靠近室壁的空气流，使得测量的温度基本上等于目标温度。 空气流量控制由位于入口管道内的空气流量控制装置提供，该进气管道将空气供给到护罩，以将空气引导通过反应室。 护罩形成支撑并包围反应室的壳体的一部分。
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7.发明授权Apparatus and method for substrate heating utilizing various infrared means to achieve uniform intensity 失效用于加强各种红外波段的基板加热装置和方法，以达到均匀强度
公开(公告)号：US5179677A
公开(公告)日：1993-01-12
申请号：US651668
申请日：1991-02-06
IPC分类号： H01L21/205 , C23C16/48 , H01L21/00 , H01L21/22 , H01L21/31
CPC分类号： H01L21/67115 , C23C16/481
摘要： A reflector array employs a number of linear, tubular heater lamps arranged in a circle concentric with the substrate to be heated. Some of the lamps have focusing reflectors and the remainder have dispersive reflectors. A peripheral cylindrical reflector surrounds the lamps and their associated reflectors. The combined reflectors permit balancing the thermal radiation intensity across the surface of the substrate.
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8.发明授权
公开(公告)号：US6083323A
公开(公告)日：2000-07-04
申请号：US5311
申请日：1998-01-09
申请人： David K. Carlson , Norma Riley , Roger N. Anderson
发明人： David K. Carlson , Norma Riley , Roger N. Anderson
CPC分类号： C23C16/4405 , C23C16/481 , C23C16/52 , H01L21/67248 , Y10S438/905
摘要： An apparatus and a concomitant method for controlling coolant (air) flow proximate a reaction chamber within a workpiece processing system such that the temperature of a wall of the reaction chamber is maintained at a predefined target temperature. The target temperature is typically a temperature that optimizes a process concurrently being accomplished within the chamber, e.g., utilizing one temperature during deposition processes and a different temperature during cleaning processes. The apparatus contains a temperature measuring device to measure the temperature of the chamber wall. The measured temperature is compared to the predefined target temperature. A closed loop system controls the air flow proximate the chamber walls such that the measured temperature becomes substantially equal to the target temperature. Air flow control is provided by an air flow control device located within an inlet conduit that supplies air to a shroud for channeling the air past the reaction chamber. The shroud forms a portion of a housing which supports and encloses the reaction chamber.
摘要翻译： 一种用于控制工件处理系统内的反应室附近的冷却剂（空气）流的装置和并发方法，使得反应室的壁的温度保持在预定的目标温度。 目标温度通常是优化室内同时进行的过程的温度，例如在沉积过程期间利用一个温度和在清洁过程期间不同的温度。 该装置包含用于测量室壁温度的温度测量装置。 将测量的温度与预定的目标温度进行比较。 闭环系统控制靠近室壁的空气流，使得测量的温度基本上等于目标温度。 空气流量控制由位于入口管道内的空气流量控制装置提供，该进气管道将空气供给到护罩，以将空气引导通过反应室。 护罩形成支撑并包围反应室的壳体的一部分。
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公开(公告)号：US06476362B1
公开(公告)日：2002-11-05
申请号：US09660565
申请日：2000-09-12
IPC分类号： F27B514
CPC分类号： H01L21/67115 , H05B3/0047
摘要： A lamp array for a thermal processing chamber. The lamp array includes a plurality of lamps arranged in a generally circular array. The plurality of lamps can be arranged in one or more concentric rings to form a generally circular array. Additional lamp arrays can be provided adjacent the circumference of the circular array or outermost concentric ring to provide a generally rectangular heating pattern. At least one row of lamps can be provided tangentially to the circular portion of the lamp array to provide preheating or postheating of process gases in the flow direction of a rectangular processing chamber.
摘要翻译： 用于热处理室的灯阵列。 灯阵列包括以大致圆形阵列布置的多个灯。 多个灯可以布置在一个或多个同心环中以形成大致圆形的阵列。 可以在圆形阵列或最外同心环的圆周附近设置附加的灯阵列，以提供大致矩形的加热图案。 至少一排灯可以与灯阵列的圆形部分相切地提供，以在矩形处理室的流动方向上提供工艺气体的预加热或后加热。
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10.发明授权Method and apparatus for controlling the radial temperature gradient of a wafer while ramping the wafer temperature 失效用于在使晶片温度升高的同时控制晶片的径向温度梯度的方法和装置
公开(公告)号：US06064799A
公开(公告)日：2000-05-16
申请号：US71469
申请日：1998-04-30
IPC分类号： H01L21/205 , H01L21/00 , H01L21/26 , A21B2/00
CPC分类号： H01L21/67248 , H01L21/67115
摘要： A method and apparatus for controlling the radial temperature gradients of a wafer and a susceptor while ramping the temperature of the wafer and susceptor using a first heat source that is primarily directed at a central portion of the wafer, a second heat source that is primarily directed at an outer portion of the wafer, a third heat source that is primarily directed at a central portion of the susceptor, and a fourth heat source that is primarily directed at an outer portion of the susceptor. Ramping of the wafer and susceptor temperature is accomplished by applying power to the first, second, third and fourth heat sources. During ramping, the ratio of the first and second heat source powers is varied as a function of the wafer temperature and the ratio of the third and fourth heat source powers is varied as a function of the susceptor temperature.
摘要翻译： 一种用于控制晶片和基座的径向温度梯度的方法和装置，同时使用主要针对晶片的中心部分的第一热源来升高晶片和基座的温度，主要定向的第二热源 在晶片的外部，主要指向基座的中心部分的第三热源和主要指向基座的外部的第四热源。 通过向第一，第二，第三和第四热源施加电力来实现晶片和基座温度的斜坡化。 在斜坡期间，第一和第二热源功率的比率作为晶片温度的函数而变化，并且第三和第四热源功率的比值作为基座温度的函数而变化。
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