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公开(公告)号：US6114227A
公开(公告)日：2000-09-05
申请号：US280258
申请日：1999-03-29
申请人： David Leksell , Ming Xi Chan , Joseph P. Ellul , Jeanne L. Luce , David T. Ryan , Iqbal A. Shareef , Chung J. Lee , Stephen M. Campbell , Giovanni Antonio Foggiato
发明人： David Leksell , Ming Xi Chan , Joseph P. Ellul , Jeanne L. Luce , David T. Ryan , Iqbal A. Shareef , Chung J. Lee , Stephen M. Campbell , Giovanni Antonio Foggiato
IPC分类号： C23C16/44 , C23C16/455 , H01L21/205 , H01L21/20
CPC分类号： C23C16/45502 , C23C16/4401 , C23C16/455 , C23C16/45563
摘要： This invention relates to the design of apparatus for processing electronic devices, including equipment for chemical vapor deposition or transport polymerization. The new designs of gas separator plates, their configuration, and the regulation of gas flows through the system provides control over the pattern of precursor gas flow away from the separation plates, thereby decreasing the amount of byproducts that are deposited on the plates and throughout the reactor. New designs for shaping other surfaces of the dispersion head reduces contamination of those elements, and new designs for chamber panels decrease the deposition of byproducts on those surfaces, as well as other elements of the reactor. Decreasing deposition of byproducts increases the amount and the quality of the film that can be deposited without requiring the system to be shut down for cleaning. This increases the throughput of products in the deposition process, thereby increasing the efficiency of electronic device manufacture and lowering the cost.
摘要翻译： 本发明涉及用于处理电子设备的装置的设计，包括用于化学气相沉积或运输聚合的设备。 气体分离器板的新设计，其结构和通过系统的气体流量的调节提供了控制离开分离板的前体气体流动的模式，从而减少了沉积在板上和整个过程中的副产物的量 反应堆。 用于成型分散头的其它表面的新设计减少了这些元件的污染，并且用于室板的新设计降低了在那些表面上以及反应器的其它元件的副产物的沉积。 副产物的沉积减少增加了可以沉积的膜的量和质量，而不需要系统关闭清洁。 这增加了沉积工艺中产品的生产量，从而提高了电子设备制造的效率并降低了成本。
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公开(公告)号：US6079353A
公开(公告)日：2000-06-27
申请号：US50228
申请日：1998-03-28
申请人： David Leksell , Ming Xi Chan , Joseph P. Ellul , Jeanne L. Luce , David T. Ryan , Iqbal A. Shareef , Chung J. Lee , Giovanni Antonio Foggiato
发明人： David Leksell , Ming Xi Chan , Joseph P. Ellul , Jeanne L. Luce , David T. Ryan , Iqbal A. Shareef , Chung J. Lee , Giovanni Antonio Foggiato
IPC分类号： C23C16/44 , C23C16/455 , H01L21/205 , C23C16/00
CPC分类号： C23C16/45502 , C23C16/4401 , C23C16/455 , C23C16/45563
摘要： This invention relates to the design of apparatus for processing electronic devices, including equipment for chemical vapor deposition. The new designs of gas separator plates, their configuration, and the regulation of gas flows through the system provides control over the pattern of precursor gas flow away from the separation plates, thereby decreasing the amount of byproducts that are deposited on the plates and throughout the reactor. New designs for shaping other surfaces of the dispersion head reduces contamination of those elements, and new designs for chamber panels decrease the deposition of byproducts on those surfaces, as well as other elements of the reactor. Decreasing deposition of byproducts increases the amount of thin film, and the quality of the film which can be deposited without requiring the system to be shut down. This increases the throughput of products in the deposition process, thereby increasing the efficiency of electronic device manufacture and lowering the cost.
摘要翻译： 本发明涉及用于处理电子设备的装置的设计，包括用于化学气相沉积的设备。 气体分离器板的新设计，其结构和通过系统的气体流量的调节提供了控制离开分离板的前体气体流动的模式，从而减少了沉积在板上和整个过程中的副产物的量 反应堆。 用于成型分散头的其它表面的新设计减少了这些元件的污染，并且用于室板的新设计降低了在那些表面上以及反应器的其它元件的副产物的沉积。 副产物的沉积减少增加了薄膜的量，以及可以在不需要系统关闭的情况下沉积的膜的质量。 这增加了沉积工艺中产品的生产量，从而提高了电子设备制造的效率并降低了成本。
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公开(公告)号：US6051321A
公开(公告)日：2000-04-18
申请号：US957480
申请日：1997-10-24
IPC分类号： H05H1/46 , B05D7/24 , B32B9/00 , C08J7/18 , C09D4/00 , C23C16/30 , C23C16/40 , C23C16/44 , C23C16/48 , C23C16/50 , H01L21/312 , H01L21/314 , H01L21/768 , H01L23/522 , B32B9/04
CPC分类号： B05D1/62 , C09D4/00 , C23C16/30 , C23C16/402 , H01L21/02126 , H01L21/02131 , H01L21/02216 , H01L21/02274 , H01L21/312 , H01L21/3121 , H01L21/3122 , H01L21/3127
摘要： Intermetal dielectric (IMD) and interlevel dielectric (ILD) that have dielectric constants (K) ranging from 2.0 to 2.6 are prepared from plasma or photon assisted CVD (PACVD) or transport polymerization (TP). The low K dielectric (LKD) materials are prepared from PACVD or TP of some selected siloxanes and F-containing aromatic compounds. The thin films combine barrier and adhesion layer functions with low dielectric constant functions, thus eliminating the necessity for separate adhesion and barrier layers, and layers of low dielectric constant. The LKD materials disclosed in this invention are particularly useful for
摘要翻译： 介电常数（K）范围为2.0至2.6的金属间电介质（IMD）和层间电介质（ILD）由等离子体或光子辅助CVD（PACVD）或运输聚合（TP）制备。 低K电介质（LKD）材料由一些选定的硅氧烷和含F芳族化合物的PACVD或TP制备。 薄膜结合具有低介电常数函数的屏障和粘附层功能，从而消除了单独粘附和阻挡层以及低介电常数层的必要性。 本发明中公开的LKD材料对于<0.18μm的IC，或在将来的IC中用作导体时特别有用。
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4.发明授权Precursors for making low dielectric constant materials with improved thermal stability 失效制备具有改善的热稳定性的低介电常数材料的前体
公开(公告)号：US6020458A
公开(公告)日：2000-02-01
申请号：US957481
申请日：1997-10-24
IPC分类号： C07C25/13 , B05D7/24 , C07F7/12 , C07F7/18 , C08F4/02 , C08F4/60 , C08G77/04 , C08J5/18 , C09D4/00 , C23C4/00 , C23C16/00 , C23C16/30 , C23C16/40 , H01L21/312 , H01L21/316 , C08G73/24
CPC分类号： B05D1/62 , C08J5/18 , C09D4/00 , C23C16/30 , C23C16/401 , H01L21/02131 , H01L21/02211 , H01L21/02216 , H01L21/02271 , H01L21/02274 , H01L21/02277 , H01L21/3122 , H01L21/3127 , H01L21/31629 , Y10T428/26
摘要： Fluorinated chemical precursors, methods of manufacture, polymer thin films with low dielectric constants, and integrated circuits comprising primarily of sp.sup.2 C-F and some hyperconjugated sp.sup.3 C-F bonds are disclosed in this invention. Precursors are disclosed for creating fluorinated silanes and siloxanes, and fluorinated hydrocarbon polymers. Thermal transport polymerization (TP), chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), high density PECVD (HPCVD), photon assisted CVD (PACVD), and plasma-photon assisted (PPE) CVD and PPETP of these chemicals provides thin films with low dielectric constants and high thermal stabilities for use in the manufacture of integrated circuits.
摘要翻译： 氟化化学前体，制造方法，具有低介电常数的聚合物薄膜以及主要包含sp2C-F和一些超共轭sp3C-F键的集成电路在本发明中公开。 公开了用于制备氟化硅烷和硅氧烷的前体和氟化烃聚合物。 这些化学品的热转移聚合（TP），化学气相沉积（CVD），等离子体增强CVD（PECVD），高密度PECVD（HPCVD），光子辅助CVD（PACVD）和等离子体光子辅助（PPE）CVD和PPETP提供 具有低介电常数和高热稳定性的薄膜用于集成电路的制造。
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公开(公告)号：US06140456A
公开(公告)日：2000-10-31
申请号：US957792
申请日：1997-10-24
CPC分类号： C08G61/025 , C08G2261/3424
摘要： New starting materials and chemical processes will be used to make fluorinated poly(para-xylylenes) (F-PPX) and fluorinated poly(para-fluoroxylylenes) (F-PPFX). The processes will use some very low cost and readily available starting materials, catalysts, chemical reactors, transport polymerization (TP) systems, and chemical vapor deposition (CVD) systems commonly used for making F-PPX. New TP and CVD deposition systems will also be used to make F-PPX and F-PPFX. These polymers are used for the manufacture of low dielectric films with high thermal stability and are sufficiently strong to withstand planarization and polishing for the manufacture of integrated circuits.
摘要翻译： 将使用新的起始材料和化学工艺制备氟化聚（对 - 二甲苯）（F-PPX）和氟化聚（对 - 氟氧基二甲苯）（F-PPFX）。 这些方法将使用一些非常低成本且易于获得的原料，催化剂，化学反应器，运输聚合（TP）系统和通常用于制造F-PPX的化学气相沉积（CVD）系统。 新的TP和CVD沉积系统也将用于制造F-PPX和F-PPFX。 这些聚合物用于制造具有高热稳定性的低电介质膜，并且足够强以承受用于集成电路制造的平坦化和抛光。
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6.发明授权Precursors for making low dielectric constant materials with improved thermal stability 失效制备具有改善的热稳定性的低介电常数材料的前体公开(公告)号：US06258407B1
公开(公告)日：2001-07-10
申请号：US09440297
申请日：1999-11-15
IPC分类号： C23C1600
CPC分类号： B05D1/62 , C08J5/18 , C09D4/00 , C23C16/30 , C23C16/401 , H01L21/02131 , H01L21/02211 , H01L21/02216 , H01L21/02271 , H01L21/02274 , H01L21/02277 , H01L21/3122 , H01L21/3127 , H01L21/31629 , Y10T428/26 , C08G77/24
摘要： Fluorinated chemical precursors, methods of manufacture, polymer thin filmswith low dielectric constants, and integrated circuits comprising primarily of sp2C—F and some hyperconjugated sp3C—F bonds are disclosed in this invention. Precursors are disclosed for creating fluorinated silanes and siloxanes, and fluorinated hydrocarbon polymers. Thermal transport polymerization (TP), chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), high density PECVD (HDPCVD), photon assisted CVD (PACVD), and plasma-photon assisted (PPE) CVD and PPETP of these chemicals provides thin films with low dielectric constants and high thermal stabilities for use in the manufacture of integrated circuits.
摘要翻译： 氟化化学前体，制造方法，具有低介电常数的聚合物薄膜以及主要包含sp2C-F和一些超共轭sp3C-F键的集成电路在本发明中公开。 公开了用于制备氟化硅烷和硅氧烷的前体和氟化烃聚合物。 这些化学品的热转移聚合（TP），化学气相沉积（CVD），等离子体增强CVD（PECVD），高密度PECVD（HDPCVD），光子辅助CVD（PACVD）和等离子体光子辅助（PPE）CVD和PPETP提供 具有低介电常数和高热稳定性的薄膜用于集成电路的制造。
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7.发明授权Deposition systems and processes for transport polymerization and chemical vapor deposition 失效用于运输聚合和化学气相沉积的沉积系统和方法
公开(公告)号：US6086679A
公开(公告)日：2000-07-11
申请号：US958352
申请日：1997-10-24
IPC分类号： C23C16/448 , B05D3/06 , B05D7/24 , C23C16/26 , C23C16/40 , C23C16/44 , C23C16/507 , H01L21/31 , H01L21/312 , C23C16/00
CPC分类号： B05D1/60 , C23C16/26 , C23C16/401 , C23C16/4412 , C23C16/507 , H01L21/312 , B05D3/061
摘要： The described deposition systems are designed to accommodate new precursors and chemical processes used for transport polymerization and chemical vapor deposition. The systems consist primarily of a reactor, a liquid injector or gas mass flow controller, a cracker and a deposition chamber under sub-atmospheres pressure. The cracker utilizes one or more types of energy, including heat, photons, and plasmas. This invention is especially useful for preparing F-PPX (fluorinated poly(para-xylylenes) and other fluorinated polymer thin films for intermetal dielectric (IMD) and interlevel dielectric (ILD) applications in the manufacture of integrated circuits with features
摘要翻译： 所描述的沉积系统被设计成适应用于运输聚合和化学气相沉积的新的前体和化学方法。 该系统主要由反应器，液体喷射器或气体质量流量控制器，裂化器和在亚压力下的沉积室组成。 裂解器利用一种或多种类型的能量，包括热，光子和等离子体。 本发明特别可用于制备具有<0.25μm特征的集成电路的制备中的金属间电介质（IMD）和层间电介质（ILD）应用的F-PPX（氟化聚（对 - 二甲苯））和其它氟化聚合物薄膜 尺寸。
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8.发明授权Low dielectric constant materials prepared from photon or plasma assisted chemical vapor deposition and transport polymerization of selected compounds 失效低介电常数材料由光子或等离子体辅助化学气相沉积和输送聚合选择的化合物制备公开(公告)号：US06663973B1
公开(公告)日：2003-12-16
申请号：US09468378
申请日：1999-12-20
IPC分类号： B32B904
CPC分类号： B05D1/62 , C09D4/00 , C23C16/30 , C23C16/402 , H01L21/02126 , H01L21/02131 , H01L21/02216 , H01L21/02274 , H01L21/312 , H01L21/3121 , H01L21/3122 , H01L21/3127 , Y10T428/3154 , Y10T428/31612 , Y10T428/31663 , C08G77/04 , C08G77/00
摘要： Intermetal dielectric (IMD) and interlevel dielectric (ILD) that have dielectric constants (K) ranging from 2.0 to 2.6 are prepared from plasma or photon assisted CVD (PACVD) or transport polymerization (TP). The low K dielectric (LKD) materials are prepared from PACVD or TP of some selected siloxanes and F-containing aromatic compounds. The thin films combine barrier and adhesion layer functions with low dielectric constant functions, thus eliminating the necessity for separate adhesion and barrier layers, and layers of low dielectric constant. The LKD materials disclosed in this invention are particularly useful for
摘要翻译： 介电常数（K）范围为2.0至2.6的金属间电介质（IMD）和层间电介质（ILD）由等离子体或光子辅助CVD（PACVD）或运输聚合（TP）制备。 低K电介质（LKD）材料由一些选定的硅氧烷和含F芳族化合物的PACVD或TP制备。 薄膜结合具有低介电常数函数的屏障和粘附层功能，从而消除了单独粘附和阻挡层以及低介电常数层的必要性。 在本发明中公开的LKD材料对<0.18mum ICs特别有用，或者在将来用作铜作为导体时尤其有用。
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9.发明授权Precursors for making low dielectric constant materials with improved thermal stability 失效制备具有改善的热稳定性的低介电常数材料的前体公开(公告)号：US06534616B2
公开(公告)日：2003-03-18
申请号：US09836815
申请日：2001-04-17
IPC分类号： C08G7724
CPC分类号： B05D1/62 , C08J5/18 , C09D4/00 , C23C16/30 , C23C16/401 , H01L21/02131 , H01L21/02211 , H01L21/02216 , H01L21/02271 , H01L21/02274 , H01L21/02277 , H01L21/3122 , H01L21/3127 , H01L21/31629 , Y10T428/26 , C08G77/24
摘要： Fluorinated chemical precursors, methods of manufacture, polymer thin films with low dielectric constants, and integrated circuits comprising primarily of sp2C—F and some hyperconjugated sp3C—F bonds are disclosed in this invention. Precursors are disclosed for creating fluorinated silanes and siloxanes, and fluorinated hydrocarbon polymers. Thermal transport polymerization (TP), chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), high density PECVD (HDPCVD), photon assisted CVD (PACVD), and plasma-photon assisted (PPE) CVD and PPETP of these chemicals provides thin films with low dielectric constants and high thermal stabilities for use in the manufacture of integrated circuits.
摘要翻译： 氟化化学前体，制造方法，具有低介电常数的聚合物薄膜以及主要包含sp2C-F和一些超共轭sp3C-F键的集成电路在本发明中公开。 公开了用于制备氟化硅烷和硅氧烷的前体和氟化烃聚合物。 这些化学品的热转移聚合（TP），化学气相沉积（CVD），等离子体增强CVD（PECVD），高密度PECVD（HDPCVD），光子辅助CVD（PACVD）和等离子体光子辅助（PPE）CVD和PPETP提供 具有低介电常数和高热稳定性的薄膜用于集成电路的制造。
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10.发明授权Low dielectric constant materials with improved thermal and mechanical properties 失效低介电常数材料具有改善的热和机械性能公开(公告)号：US06323297B1
公开(公告)日：2001-11-27
申请号：US08958057
申请日：1997-10-24
IPC分类号： C08F1418
摘要： New starting materials and methods are used to make materials with low dielectric constant through the processes of transport polymerization or chemical vapor deposition. The starting materials and precursors are designed to provide polymers with combined low dielectric constant, high thermal stability and high mechanical strength.
摘要翻译： 通过传输聚合或化学气相沉积的方法，使用新的原料和方法制备具有低介电常数的材料。 原料和前体被设计成提供具有低介电常数，高热稳定性和高机械强度的聚合物。
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