公开(公告)号：US5378330A

公开(公告)日：1995-01-03

申请号：US59466

申请日：1993-05-07

Applicant: Hong Li ,  Stephen D. Senturia ,  David Volfson

Inventor： Hong Li ,  Stephen D. Senturia ,  David Volfson

IPC: C25F3/16 ,  C25F3/24

CPC classification number: C25F3/16 ,  C25F3/24

Abstract: A method for polishing a substrate having at least one micro-sized structure. The method includes identifying a first region of the substrate on which a micro-sized structure is to be located. The first region is the region in which polishing is desired. A second region of the substrate, in which polishing is not desired, is also identified. An adhesion promoter is optionally applied to the substrate. The second region of the substrate is coated with a selected coating material that does not degrade substantially when exposed to a selected electrolyte. Material is removed from the first region, exposing a micro-sized structure. The coating material may be removed by the same machining process that forms the micro-sized structure. The substrate is submerged in the selected electrolyte so that the first region is exposed to the electrolyte. The first region of the substrate is electropolished. The coating is then optionally removed.

Abstract translation: 一种用于抛光具有至少一个微尺寸结构的衬底的方法。 该方法包括识别在其上定位有微尺寸结构的基底的第一区域。 第一区域是需要抛光的区域。 还鉴定了不需要抛光的衬底的第二区域。 任选地将粘合促进剂施加到基底上。 衬底的第二区域涂覆有当暴露于所选择的电解质时不会显着降解的选择的涂层材料。 从第一区域去除材料，暴露微尺寸结构。 可以通过形成微尺寸结构的相同的加工工艺去除涂层材料。 将衬底浸没在所选择的电解质中，使得第一区域暴露于电解质。 电解抛光底物的第一区域。 然后可选地除去涂层。

公开(公告)号：US4980034A

公开(公告)日：1990-12-25

申请号：US333179

申请日：1989-04-04

Applicant: David Volfson ,  Stephen D. Senturia

Inventor： David Volfson ,  Stephen D. Senturia

IPC: H01L21/60 ,  H01L23/538 ,  H05K3/00 ,  H05K3/06 ,  H05K3/10 ,  H05K3/20 ,  H05K3/38 ,  H05K3/42 ,  H05K3/46

CPC classification number: H05K3/4682 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5387 ,  H05K3/423 ,  H01L2221/68345 ,  H01L2224/1147 ,  H01L2924/01019 ,  H01L2924/3011 ,  H05K2201/0154 ,  H05K2201/0355 ,  H05K2201/0394 ,  H05K2201/096 ,  H05K2203/016 ,  H05K2203/0733 ,  H05K2203/095 ,  H05K3/002 ,  H05K3/0023 ,  H05K3/0041 ,  H05K3/062 ,  H05K3/108 ,  H05K3/205 ,  H05K3/388 ,  H05K3/467

Abstract: A multi-layer interconnect structure of alternating dielectric (e.g., polyimide) and metal (e.g., copper) is built on a substrate supporting a continuous layer of metal. This metal layer is used as an electrode for plating vias through all the dielectric layers. Once the desired number of layers are formed, the substrate is removed and the continuous metal layer is patterned. Solid metal vias having nearly vertical side walls can be stacked vertically, producing good electrical and thermal transfer paths and permitting small, closely-spaced conductors. Further, by mixing geometrical shapes of conductors, a variety of useful structures can be achieved, such as controlled impedance transmission lines and multiconductor TAB tape with interconnects on tape of different dimensions than TAB fingers.

Abstract translation: 在支撑连续金属层的基板上建立交替电介质（例如聚酰亚胺）和金属（例如铜）的多层互连结构。 该金属层用作通过所有介电层电镀通孔的电极。 一旦形成了期望数量的层，就去除衬底并且连续的金属层被图案化。 具有几乎垂直侧壁的固体金属通孔可以垂直堆叠，产生良好的电和热传递路径并允许小的，紧密间隔的导体。 此外，通过混合导体的几何形状，可以实现各种有用的结构，例如受控阻抗传输线和具有与TAB指不同的尺寸的带上的互连的多导体TAB带。

公开(公告)号：US5106461A

公开(公告)日：1992-04-21

申请号：US632364

申请日：1990-12-21

Applicant: David Volfson ,  Stephen D. Senturia

Inventor： David Volfson ,  Stephen D. Senturia

IPC: H01L23/538 ,  H05K3/00 ,  H05K3/06 ,  H05K3/10 ,  H05K3/20 ,  H05K3/38 ,  H05K3/42 ,  H05K3/46

CPC classification number: H05K3/4682 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5387 ,  H05K3/423 ,  H01L2221/68345 ,  H01L2224/1147 ,  H01L2924/01019 ,  H01L2924/3011 ,  H05K2201/0154 ,  H05K2201/0355 ,  H05K2201/0394 ,  H05K2201/09563 ,  H05K2201/096 ,  H05K2203/016 ,  H05K2203/0733 ,  H05K2203/095 ,  H05K3/002 ,  H05K3/0023 ,  H05K3/0041 ,  H05K3/062 ,  H05K3/108 ,  H05K3/205 ,  H05K3/388 ,  H05K3/467 ,  Y10S438/977

Abstract: A multi-layer interconnect structure of alternating dielectric (e.g., polyimide) and metal (e.g., copper) is built on a substrate supporting a continuous layer of metal. This metal layer is used as an electrode for plating vias through all the dielectric layers. Once the desired number of layers are formed, the substrate is removed and the continuous metal layer is patterned. Solid metal vias having nearly vertical side walls can be stacked vertically, producing good electrical and thermal transfer paths and permitting small, closely-spaced conductors. Further, by mixing geometrical shapes of conductors, a variety of useful structures can be achieved, such as controlled impedance transmission lines and multiconductor TAB tape with interconnects on tape of different dimensions than TAB fingers.

Abstract translation: 在支撑连续金属层的基板上建立交替电介质（例如聚酰亚胺）和金属（例如铜）的多层互连结构。 该金属层用作通过所有介电层电镀通孔的电极。 一旦形成了期望数量的层，就去除衬底并且连续的金属层被图案化。 具有几乎垂直侧壁的固体金属通孔可以垂直堆叠，产生良好的电和热传递路径并允许小的，紧密间隔的导体。 此外，通过混合导体的几何形状，可以实现各种有用的结构，例如受控阻抗传输线和具有与TAB指不同的尺寸的带上的互连的多导体TAB带。

公开(公告)号：US5834627A

公开(公告)日：1998-11-10

申请号：US766142

申请日：1996-12-17

Applicant: Antonio J. Ricco ,  Robert C. Hughes ,  James H. Smith ,  Daniel J. Moreno ,  Ronald P. Manginell ,  Stephen D. Senturia ,  Robert J. Huber

Inventor： Antonio J. Ricco ,  Robert C. Hughes ,  James H. Smith ,  Daniel J. Moreno ,  Ronald P. Manginell ,  Stephen D. Senturia ,  Robert J. Huber

IPC: G01N27/16 ,  G01N7/00

CPC classification number: G01N27/16

Abstract: A combustible gas sensor that uses a resistively heated, noble metal-coated, micromachined polycrystalline Si filament to calorimetrically detect the presence and concentration of combustible gases. The filaments tested to date are 2 .mu.m thick.times.10 .mu.m wide.times.100, 250, 500, or 1000 .mu.m-long polycrystalline Si; some are overcoated with a 0.25 .mu.m-thick protective CVD Si.sub.3 N.sub.4 layer. A thin catalytic Pt film was deposited by CVD from the precursor Pt(acac).sub.2 onto microfilaments resistively heated to approximately 500.degree. C.; Pt deposits only on the hot filament. Using a constant-resistance-mode feedback circuit, Pt-coated filaments operating at ca. 300.degree. C. (35 mW input power) respond linearly, in terms of the change in supply current required to maintain constant resistance (temperature), to H.sub.2 concentrations between 100 ppm and 1% in an 80/20 N.sub.2 /O.sub.2 mixture. Other catalytic materials can also be used.

Abstract translation: 一种可燃气体传感器，其使用电阻加热的贵金属涂覆的微加工多晶硅丝来量热检测可燃气体的存在和浓度。 到目前为止测试的长丝是2μm厚的10μm宽×100,250,500或1000μm长的多晶Si; 有些被外涂了0.25μm厚的保护性CVD Si 3 N 4层。 通过CVD将Pt催化Pt薄膜从前体Pt（acac）2沉积到电阻加热至约500℃的微丝上; Pt仅在热丝上沉积。 使用恒电阻模式反馈电路，Pt涂层长丝在约 在80/20 N2 / O2混合物中，在保持恒定电阻（温度）所需的电源电流变化为100 ppm和1％之间，300°C（35 mW输入功率）线性响应。 也可以使用其它催化剂。

公开(公告)号：US4899581A

公开(公告)日：1990-02-13

申请号：US351330

申请日：1989-05-04

Applicant: Mark G. Allen ,  Stephen D. Senturia

Inventor： Mark G. Allen ,  Stephen D. Senturia

IPC: G01N3/00 ,  G01N3/02 ,  G01N19/04

CPC classification number: G01N19/04 ,  G01N2203/0091 ,  G01N2203/0298

Abstract: A device for quantitatively measuring adherence of thin films provides a first substrate having an upper surface and a second substrate having a surface coplanar therewith. The second substrate is spaced on all sides from the first substrate by a cavity. The thin film is suspended over the cavity and adhered to the surfaces of the two substrates. A characteristic length of the area of the surface of the second substrate to which the film is adhered is made small relative to the characteristic length of the cavity. A pressure differential is applied across the thickness of the film such that the film debonds from the surface of the second substrate. Mechanical characteristics of the debonding of the film are observed and measured. The characteristics are thereafter related to provide a quantitative measurement of adherence of the thin film to the second substrate. A measurement of relative adherence between different films is obtained by testing a multilayered film structure. Other layers of various materials may be used to define a smaller area of adherence to which the film may be adhered.

Abstract translation: 用于定量测量薄膜粘附性的装置提供具有上表面的第一基底和具有与其共面的表面的第二基底。 第二基板通过空腔与第一基板的所有侧面间隔开。 薄膜悬挂在空腔上并粘附到两个基板的表面上。 相对于空腔的特征长度，薄膜附着的第二基板的表面的面积的特征长度变小。 在膜的厚度上施加压差，使得膜从第二基板的表面剥离。 观察并测量薄膜脱粘的机械特性。 此后的特征涉及提供薄膜对第二基底的粘附的定量测量。 通过测试多层膜结构获得不同膜之间的相对粘附度的测量。 可以使用各种材料的其它层来限定薄膜附着的更小的粘附面积。

公开(公告)号：US4368480A

公开(公告)日：1983-01-11

申请号：US104641

申请日：1979-12-17

Applicant: Stephen D. Senturia

Inventor： Stephen D. Senturia

IPC: G01N27/414 ,  H01L27/088 ,  H01L29/423 ,  H01L29/49 ,  H03K3/354 ,  H03K3/356 ,  H03K19/094 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L27/088 ,  G01N27/4148 ,  H01L29/42312 ,  H01L29/4966 ,  H01L29/4983 ,  H03K19/094 ,  H03K3/354 ,  H03K3/356017

Abstract: Logic elements such as inverters, NAND-gates and NOR-gates that include charge-flow transistors and systems that include such logic elements, and oscillators that include such logic elements. A basic logic element includes a charge-flow transistor and a load element, in combination, the load element being connected to either the source or the drain of the charge-flow transistor.

Abstract translation: 诸如逆变器，NAND门和NOR门的逻辑元件包括电荷流量晶体管和包括这种逻辑元件的系统，以及包括这种逻辑元件的振荡器。 基本逻辑元件包括电荷流量晶体管和负载元件，组合地，负载元件连接到电荷流量晶体管的源极或漏极。

公开(公告)号：US4317084A

公开(公告)日：1982-02-23

申请号：US76038

申请日：1979-09-17

Applicant: Stephen D. Senturia ,  Kou Togashi

Inventor： Stephen D. Senturia ,  Kou Togashi

IPC: G01N27/414 ,  H01L29/423 ,  H01L29/49 ,  H03B25/00

CPC classification number: H01L29/4991 ,  G01N27/4148 ,  H01L29/42312 ,  H01L29/4983

Abstract: An oscillator having a logic element that includes a charge-flow transistor and a load element, in combination, and that further includes a Schmitt trigger or the like connected to receive as input thereto an output from the logic element and to provide an output that is fed back as input to the logic element.

Abstract translation: 具有组合的包括电荷流量晶体管和负载元件的逻辑元件的振荡器，并且还包括施密特触发器等，其连接到作为输入接收来自逻辑元件的输出并提供输出 作为逻辑元件的输入反馈。

公开(公告)号：US07196789B2

公开(公告)日：2007-03-27

申请号：US10752212

申请日：2004-01-06

Applicant: Stephen D. Senturia ,  Malcolm C. Smith

Inventor： Stephen D. Senturia ,  Malcolm C. Smith

IPC: G01J3/42 ,  G01J3/433

CPC classification number: G01J1/26 ,  G01J3/42

Abstract: A light processor (such as a spectrometer) providing wavelength equalization for a sample pathway and a reference pathway by actuation of a light amplitude modulator. A chemometric processor including a light amplitude modulator capable of performing chemical analysis by applying weights to wavelengths of light, thereby reducing the need for electronic post processing.

Abstract translation: 通过致动光振幅调制器来提供样品路径的波长均衡和参考路径的光处理器（例如光谱仪）。 一种化学计量处理器，包括能够通过对光波长施加加权来执行化学分析的光振幅调制器，从而减少对电子后处理的需要。

公开(公告)号：US07046410B2

公开(公告)日：2006-05-16

申请号：US09975169

申请日：2001-10-11

Applicant: Erik R. Deutsch ,  Malcolm C. Smith ,  Michael A. Butler ,  Stephen D. Senturia

Inventor： Erik R. Deutsch ,  Malcolm C. Smith ,  Michael A. Butler ,  Stephen D. Senturia

IPC: G02B26/08

CPC classification number: B82Y30/00 ,  G02B26/0808

Abstract: A programmable MEMS diffractive optical processor having actuatable grating elements that are optically adjacent and supported at points intermediate the ends of the grating elements. The grating elements are maintained substantially flat during actuation of the grating elements.

公开(公告)号：US06392313B1

公开(公告)日：2002-05-21

申请号：US09354544

申请日：1999-07-15

Applicant: Alan H. Epstein ,  Stephen D. Senturia ,  Ian A. Waitz ,  Jeffrey H. Lang ,  Stuart A. Jacobson ,  Fredric F. Ehrich ,  Martin A. Schmidt ,  G. K. Ananthasuresh ,  Mark S. Spearing ,  Kenneth S. Breuer ,  Steven F. Nagle

Inventor： Alan H. Epstein ,  Stephen D. Senturia ,  Ian A. Waitz ,  Jeffrey H. Lang ,  Stuart A. Jacobson ,  Fredric F. Ehrich ,  Martin A. Schmidt ,  G. K. Ananthasuresh ,  Mark S. Spearing ,  Kenneth S. Breuer ,  Steven F. Nagle

IPC: H01L2984

CPC classification number: F23R3/42 ,  F01D5/28 ,  F01D15/06 ,  F01D25/20 ,  F01K13/00 ,  F02C3/05 ,  F02K9/48 ,  F05D2220/50 ,  F05D2230/14 ,  F05D2250/82 ,  F05D2250/84 ,  F05D2300/2261 ,  F05D2300/2283 ,  F05D2300/607 ,  F23C2900/03001

Abstract: The invention overcomes limitations of conventional power and thermodynamic sources by with micromachinery components that enable production of significant power and efficient operation of thermodynamic systems in the millimeter and micron regime to meet the efficiency, mobility, modularity, weight, and cost requirements of many modern applications. A micromachine of the invention has a rotor disk journalled for rotation in a stationary structure by a journal bearing. A plurality of radial flow rotor blades, substantially untapered in height, are disposed on a first rotor disk face, and an electrically conducting region is disposed on a rotor disk face. A plurality of stator electrodes that are electrically interconnected to define multiple electrical stator phases are disposed on a wall of the stationary structure located opposite the electrically conducting region of the rotor disk. A first orifice in the stationary structure provides fluidic communication with the first rotor disk face at a location radially central of the rotor blades, and a second orifice in the stationary structure provides fluidic communication with the first rotor disk face at a location radially peripheral of the rotor blades. An electrical connection to the stator electrode configuration is provided for stator electrode excitation and for power transfer with the stator electrode configuration as the rotor disk rotates.

Abstract translation: 本发明克服了常规功率和热力学源的限制，其中微机械组件能够在毫米和微米范围内产生显着功率和热力系统的有效运行，以满足许多现代应用的效率，移动性，模块化，重量和成本要求 。 本发明的微型机械具有转轴，该转子盘通过轴颈轴承在静止结构中旋转。 基本上没有高度的多个径流式转子叶片设置在第一转子盘面上，导电区域设置在转子盘面上。 电气互连以限定多个电定子相的多个定子电极设置在固定结构的与转子盘的导电区域相对的位置的壁上。 固定结构中的第一孔口在转子叶片的径向中心的位置处提供与第一转子盘面的流体连通，并且固定结构中的第二孔口在第一转子盘面的径向周边的位置处提供与第一转子盘面的流体连通 转子叶片。 提供与定子电极配置的电连接用于定子电极激励和用于当转子盘旋转时具有定子电极配置的功率传递。