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    Apparatuses and methods for depositing SiC/SiCN films via cross-metathesis reactions with organometallic co-reactants
    5.
    发明授权
    Apparatuses and methods for depositing SiC/SiCN films via cross-metathesis reactions with organometallic co-reactants 有权
    通过与有机金属共反应物的交叉复分解反应沉积SiC / SiCN膜的装置和方法

    公开(公告)号：US08993460B2

    公开(公告)日：2015-03-31

    申请号：US13738851

    申请日：2013-01-10

    申请人： Adrien LaVoie

    发明人： Adrien LaVoie

    IPC分类号： H01L21/31 ,  H01L21/02 ,  C23C16/32

    CPC分类号： H01L21/0228 ,  C23C16/325 ,  C23C16/36 ,  C23C16/45525 ,  C23C16/45529 ,  C23C16/4554 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/52 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/0226 ,  H01L21/02274

    摘要： Disclosed herein are methods of forming SiC/SiCN film layers on surfaces of semiconductor substrates. The methods may include introducing a silicon-containing film-precursor and an organometallic ligand transfer reagent into a processing chamber, adsorbing the silicon-containing film-precursor, the organometallic ligand transfer reagent, or both onto a surface of a semiconductor substrate under conditions whereby either or both form an adsorption-limited layer, and reacting the silicon-containing film-precursor with the organometallic ligand transfer reagent, after either or both have formed the adsorption-limited layer. The reaction results in the forming of the film layer. In some embodiments, a byproduct is also formed which contains substantially all of the metal of the organometallic ligand transfer reagent, and the methods may further include removing the byproduct from the processing chamber. Also disclosed herein are semiconductor processing apparatuses for forming SiC/SiCN film layers.

    摘要翻译： 这里公开了在半导体衬底的表面上形成SiC / SiCN膜层的方法。 该方法可以包括将含硅膜前体和有机金属配体转移试剂引入到处理室中，在半导体衬底的表面上将含硅膜前体，有机金属配体转移试剂或两者吸附到半导体衬底的表面上， 在形成吸附限制层之后，或两者之一或两者形成吸附限制层，并使含硅膜前体与有机金属配体转移试剂反应。 反应导致膜层的形成。 在一些实施方案中，还形成副产物，其含有基本上所有的有机金属配体转移试剂的金属，并且所述方法还可以包括从处理室除去副产物。 本文还公开了用于形成SiC / SiCN膜层的半导体处理装置。

    APPARATUSES AND METHODS FOR DEPOSITING SiC/SiCN FILMS VIA CROSS-METATHESIS REACTIONS WITH ORGANOMETALLIC CO-REACTANTS
    6.
    发明申请
    APPARATUSES AND METHODS FOR DEPOSITING SiC/SiCN FILMS VIA CROSS-METATHESIS REACTIONS WITH ORGANOMETALLIC CO-REACTANTS 有权
    通过与有机合成反应物的交叉反应反应沉积SiC / SiCN膜的方法和方法

    公开(公告)号：US20140193983A1

    公开(公告)日：2014-07-10

    申请号：US13738851

    申请日：2013-01-10

    申请人： Adrien LaVoie

    发明人： Adrien LaVoie

    IPC分类号： H01L21/02

    CPC分类号： H01L21/0228 ,  C23C16/325 ,  C23C16/36 ,  C23C16/45525 ,  C23C16/45529 ,  C23C16/4554 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/52 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/0226 ,  H01L21/02274

    摘要： Disclosed herein are methods of forming SiC/SiCN film layers on surfaces of semiconductor substrates. The methods may include introducing a silicon-containing film-precursor and an organometallic ligand transfer reagent into a processing chamber, adsorbing the silicon-containing film-precursor, the organometallic ligand transfer reagent, or both onto a surface of a semiconductor substrate under conditions whereby either or both form an adsorption-limited layer, and reacting the silicon-containing film-precursor with the organometallic ligand transfer reagent, after either or both have formed the adsorption-limited layer. The reaction results in the forming of the film layer. In some embodiments, a byproduct is also formed which contains substantially all of the metal of the organometallic ligand transfer reagent, and the methods may further include removing the byproduct from the processing chamber. Also disclosed herein are semiconductor processing apparatuses for forming SiC/SiCN film layers.

    摘要翻译： 这里公开了在半导体衬底的表面上形成SiC / SiCN膜层的方法。 该方法可以包括将含硅膜前体和有机金属配体转移试剂引入到处理室中，在半导体衬底的表面上将含硅膜前体，有机金属配体转移试剂或两者吸附到半导体衬底的表面上， 在形成吸附限制层之后，或两者之一或两者形成吸附限制层，并使含硅膜前体与有机金属配体转移试剂反应。 反应导致膜层的形成。 在一些实施方案中，还形成副产物，其含有基本上所有的有机金属配体转移试剂的金属，并且所述方法还可以包括从处理室除去副产物。 本文还公开了用于形成SiC / SiCN膜层的半导体处理装置。

    Method of plasma activated deposition of a conformal film on a substrate surface
    7.
    发明授权
    Method of plasma activated deposition of a conformal film on a substrate surface 有权
    在基材表面上等离子体激活沉积保形膜的方法

    公开(公告)号：US08728955B2

    公开(公告)日：2014-05-20

    申请号：US13409212

    申请日：2012-03-01

    申请人： Adrien LaVoie ,  Mark J. Saly ,  Daniel Moser ,  Rajesh Odedra ,  Ravi Konjolia

    发明人： Adrien LaVoie ,  Mark J. Saly ,  Daniel Moser ,  Rajesh Odedra ,  Ravi Konjolia

    IPC分类号： H01L21/469 ,  H01L21/302

    CPC分类号： C23C16/52 ,  C23C16/045 ,  C23C16/345 ,  C23C16/4554 ,  C23C16/45553 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/31116 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76837 ,  H01L21/76898

    摘要： A method of depositing a film on a substrate surface includes providing a substrate in a reaction chamber; selecting a silicon-containing reactant from a precursor group consisting of di-tert-butyl diazidosilane, bis(ethylmethylamido)silane, bis(diisopropylamino)silane, bis(tert-butylhydrazido)diethylsilane, tris(dimethylamido)silylazide, tris(dimethylamido)silylamide, ethylsilicon triazide, diisopropylaminosilane, and hexakis(dimethylamido)disilazane; introducing the silicon-containing reactant in vapor phase into the reaction chamber under conditions allowing the silicon-containing reactant to adsorb onto the substrate surface; introducing a second reactant in vapor phase into the reaction chamber while the silicon-containing reactant is adsorbed on the substrate surface, and wherein the second reactant is introduced without first sweeping the silicon-containing reactant out of the reaction chamber; and exposing the substrate surface to plasma to drive a reaction between the silicon-containing reactant and the second reactant on the substrate surface to form the film.

    摘要翻译： 在衬底表面上沉积膜的方法包括在反应室中提供衬底; 从二叔丁基重氮基硅烷，双（乙基甲基氨基）硅烷，双（二异丙基氨基）硅烷，双（叔丁基肼基）二乙基硅烷，三（二甲基氨基）甲硅烷基叠氮化物，三（二甲基氨基）甲硅烷基酰胺 ，乙基硅氧烷三氮化物，二异丙基氨基硅烷和六（二甲基氨基）二硅氮烷; 在允许含硅反应物吸附到基材表面上的条件下，将含硅反应物气相引入反应室; 将所述含硅反应物吸附在所述基材表面上的情况下，将气相中的第二反应物引入所述反应室，并且其中引入所述第二反应物而不先将所述含硅反应物从所述反应室中排出; 并将衬底表面暴露于等离子体以驱动衬底表面上的含硅反应物和第二反应物之间的反应以形成膜。

    Plasma-activated deposition of conformal films
    8.
    发明授权
    Plasma-activated deposition of conformal films 有权
    等离子体活化沉积的保形膜

    公开(公告)号：US08101531B1

    公开(公告)日：2012-01-24

    申请号：US12889132

    申请日：2010-09-23

    申请人： Ming Li ,  Hu Kang ,  Mandyam Sriram ,  Adrien LaVoie

    发明人： Ming Li ,  Hu Kang ,  Mandyam Sriram ,  Adrien LaVoie

    IPC分类号： H01L21/469

    CPC分类号： H01L21/02164 ,  C23C16/045 ,  C23C16/402 ,  C23C16/45538 ,  H01L21/02274

    摘要： Methods and hardware for depositing thin conformal films using plasma-activated conformal film deposition (CFD) processes are described herein. In one example, a method for forming a thin conformal film comprises, in a first phase, generating precursor radicals off of a surface of the substrate and adsorbing the precursor radicals to the surface to form surface active species; in a first purge phase, purging residual precursor from the process station; in a second phase, supplying a reactive plasma to the surface, the reactive plasma configured to react with the surface active species and generate the thin conformal film; and in a second purge phase, purging residual reactant from the process station.

    摘要翻译： 本文描述了使用等离子体激活的保形膜沉积（CFD）工艺沉积薄保形膜的方法和硬件。 在一个实例中，形成薄保形膜的方法包括在第一阶段中从衬底的表面产生前体自由基并将前体基团吸附到表面以形成表面活性物质; 在第一清洗阶段，从处理站清除残余前体; 在第二阶段中，将反应性等离子体供应到所述表面，所述反应性等离子体被配置成与所述表面活性物质反应并产生所述薄的保形膜; 并且在第二吹扫阶段，从处理站清除残留的反应物。

    Plasma-activated deposition of conformal films
    10.
    发明授权
    Plasma-activated deposition of conformal films 有权
    等离子体活化沉积的保形膜

    公开(公告)号：US08524612B2

    公开(公告)日：2013-09-03

    申请号：US13011569

    申请日：2011-01-21

    申请人： Ming Li ,  Hu Kang ,  Mandyam Sriram ,  Adrien LaVoie

    发明人： Ming Li ,  Hu Kang ,  Mandyam Sriram ,  Adrien LaVoie

    IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L21/44

    CPC分类号： H01L21/02104 ,  C23C16/401 ,  C23C16/45531 ,  C23C16/45534 ,  C23C16/45542 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/76898

    摘要： Embodiments related to depositing thin conformal films using plasma-activated conformal film deposition (CFD) processes are described herein. In one example, a method of processing a substrate includes, applying photoresist to the substrate, exposing the photoresist to light via a stepper, patterning the resist with a pattern and transferring the pattern to the substrate, selectively removing photoresist from the substrate, placing the substrate into a process station, and, in the process station, in a first phase, generating radicals off of the substrate and adsorbing the radicals to the substrate to form active species, in a first purge phase, purging the process station, in a second phase, supplying a reactive plasma to the surface, the reactive plasma configured to react with the active species and generate the film, and in a second purge phase, purging the process station.

    摘要翻译： 本文描述了使用等离子体激活的保形膜沉积（CFD）工艺沉积薄保形膜的实施例。 在一个实例中，处理衬底的方法包括：将光致抗蚀剂施加到衬底，通过步进器将光致抗蚀剂曝光，将图案图案化并将图案转移到衬底，从衬底选择性地去除光致抗蚀剂， 底物进入处理站，并且在处理站中，在第一阶段中，在第一阶段中产生自由基，并且将基团吸附到基底上以形成活性物质，在第一清洗阶段中，在第二阶段中以第二阶段净化处理站 将反应性等离子体供应到所述表面，所述反应性等离子体被配置为与所述活性物质反应并产生所述膜，并且在第二清除阶段中清除所述处理站。