公开(公告)号：US20070111519A1

公开(公告)日：2007-05-17

申请号：US11428230

申请日：2006-06-30

申请人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Allen D'Ambra ,  Timothy Weidman ,  Michael Stewart ,  Eugene Rabinovich ,  Svetlana Sherman ,  Manoocher Birang ,  Yaxin Wang ,  Michael Yang ,  Bradley Hansen

发明人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Allen D'Ambra ,  Timothy Weidman ,  Michael Stewart ,  Eugene Rabinovich ,  Svetlana Sherman ,  Manoocher Birang ,  Yaxin Wang ,  Michael Yang ,  Bradley Hansen

IPC分类号： H01L21/44

CPC分类号： H01L21/288 ,  C23C18/1619 ,  C23C18/1653 ,  C23C18/168 ,  C23C18/1682 ,  C23C18/1685 ,  C23C18/1689 ,  C25D7/123 ,  C25D17/001 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/02087 ,  H01L21/28518 ,  H01L21/28562 ,  H01L21/67051 ,  H01L21/6719 ,  H01L21/6723 ,  H01L21/67751 ,  H01L21/68785 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76873 ,  H01L21/76874

摘要： Embodiments of the invention provide methods for depositing a material onto a surface of a substrate by using one or more electroless, electrochemical plating, CVD and/or ALD processes. Embodiments of the invention provide a method for depositing a seed layer on a substrate with an electroless process and to subsequently fill interconnect features on the substrate with an ECP process on a single substrate processing platform. Other aspects provide a method for depositing a seed layer on a substrate, fill interconnect features on a substrate, or sequentially deposit both a seed layer and fill interconnect features on the substrate. One embodiment provides a method for forming a capping layer over substrate interconnects. Methods include the use of a vapor dryer for pre- and post-deposition cleaning of substrates as well as a brush box chamber for post-deposition cleaning.

摘要翻译： 本发明的实施方案提供了通过使用一种或多种化学镀，CVD和/或ALD工艺将材料沉积到衬底的表面上的方法。 本发明的实施方案提供了一种用于在基板上沉积种子层的方法，该方法具有无电解方法，并随后在单个基板处理平台上用ECP工艺填充基板上的互连特征。 其它方面提供了一种用于在衬底上沉积种子层的方法，在衬底上填充互连特征，或者在衬底上顺序地沉积种子层和填充互连特征。 一个实施例提供了一种在衬底互连上形成覆盖层的方法。 方法包括使用蒸气干燥器进行基板的沉积前和沉积后清洁以及用于后沉积清洁的刷盒室。

公开(公告)号：US20060251801A1

公开(公告)日：2006-11-09

申请号：US11385484

申请日：2006-03-20

申请人： Timothy Weidman ,  Srinivas Gandikota ,  Michael Stewart ,  Avgerinos Gelatos ,  Arulkumar Shanmugasundram

发明人： Timothy Weidman ,  Srinivas Gandikota ,  Michael Stewart ,  Avgerinos Gelatos ,  Arulkumar Shanmugasundram

IPC分类号： B05D5/12

CPC分类号： C23C18/1678 ,  B82Y30/00 ,  C23C16/0227 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/14 ,  C23C18/1608 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/31 ,  C23C18/32 ,  C23C18/34 ,  C23C18/38 ,  C23C18/40 ,  C23C18/48 ,  C25D5/34 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76874 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments of the invention provide a simplified method of filling contact level features formed in a semiconductor device. In general the method includes a novel method of forming a contact level feature that contains a silicide interface and a tungsten CVD deposited layer. The processes discussed below are less complex and less time consuming than other conventional contact level interconnect formation processes and thus will have an improved device yield.

摘要翻译： 本发明的实施例提供了一种填充形成在半导体器件中的接触电平特征的简化方法。 通常，该方法包括形成包含硅化物界面和钨CVD沉积层的接触电平特征的新方法。 下面讨论的方法比其它常规的接触电平互连形成过程更不复杂和更耗时，因此将具有改进的器件产量。

公开(公告)号：US20060252252A1

公开(公告)日：2006-11-09

申请号：US11385290

申请日：2006-03-20

申请人： Zhize Zhu ,  Timothy Weidman ,  Michael Stewart ,  Arulkumar Shanmugasundram ,  Nety Krishna ,  Anthony Konecni

发明人： Zhize Zhu ,  Timothy Weidman ,  Michael Stewart ,  Arulkumar Shanmugasundram ,  Nety Krishna ,  Anthony Konecni

IPC分类号： H01L21/4763 ,  H01L21/44

CPC分类号： C23C18/1678 ,  B82Y30/00 ,  C23C16/0227 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/14 ,  C23C18/1608 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/31 ,  C23C18/32 ,  C23C18/34 ,  C23C18/38 ,  C23C18/40 ,  C23C18/48 ,  C25D5/34 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76874 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： In one embodiment, a method for depositing a material on a substrate is provided which includes positioning a substrate containing a contact within a process chamber, exposing the substrate to at least one pretreatment step and depositing a fill the contact vias by an electroless deposition process. The pretreatment step contains multiple processes for exposing the substrate to a wet-clean solution, a hydrogen fluoride solution, a tungstate solution, a palladium activation solution, an acidic rinse solution, a complexing agent solution or combinations thereof. Generally, the HARC via contains a tungsten oxide surface and the shallow contact via may contain a tungsten silicide surface. In some example, the substrate is pretreated such that both vias are filled at substantially the same time by a nickel-containing material through an electroless deposition process.

摘要翻译： 在一个实施例中，提供了一种用于在衬底上沉积材料的方法，其包括将包含接触件的衬底定位在处理室内，将衬底暴露于至少一个预处理步骤，并通过无电沉积工艺沉积接触孔。 预处理步骤包含用于将基底暴露于湿清洁溶液，氟化氢溶液，钨酸盐溶液，钯活化溶液，酸性漂洗溶液，络合剂溶液或其组合的多种方法。 通常，HARC通孔包含氧化钨表面，浅接触通孔可以含有硅化钨表面。 在一些实例中，将基材预处理，使得通过无电镀沉积工艺通过含镍材料在几乎相同的时间填充两个通孔。

公开(公告)号：US20060246217A1

公开(公告)日：2006-11-02

申请号：US11385047

申请日：2006-03-20

申请人： Timothy Weidman ,  Michael Stewart ,  Zhize Zhu ,  Arulkumar Shanmugasundram ,  Srinivas Gandikota ,  Avgerinos Gelatos

发明人： Timothy Weidman ,  Michael Stewart ,  Zhize Zhu ,  Arulkumar Shanmugasundram ,  Srinivas Gandikota ,  Avgerinos Gelatos

IPC分类号： B28B19/00 ,  C23C18/34

CPC分类号： C23C18/1893 ,  B82Y30/00 ,  C23C18/1651 ,  C23C18/32 ,  C23C18/34 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/288 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76847 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76874 ,  H01L21/76879 ,  H01L21/76889

摘要： Embodiments as described herein provide methods for depositing a material on a substrate during electroless deposition processes, as well as compositions of the electroless deposition solutions. In one embodiment, the substrate contains a contact aperture having an exposed silicon contact surface. In another embodiment, the substrate contains a contact aperture having an exposed silicide contact surface. The apertures are filled with a metal contact material by exposing the substrate to an electroless deposition process. The metal contact material may contain a cobalt material, a nickel material, or alloys thereof. Prior to filling the apertures, the substrate may be exposed to a variety of pretreatment processes, such as preclean processes and activations processes. A preclean process may remove organic residues, native oxides, and other contaminants during a wet clean process or a plasma etch process. Embodiments of the process also provide the deposition of additional layers, such as a capping layer.

摘要翻译： 本文所述的实施方案提供了在无电沉积工艺期间在基材上沉积材料的方法以及无电沉积溶液的组合物。 在一个实施例中，衬底包含具有暴露的硅接触表面的接触孔。 在另一个实施例中，衬底包含具有暴露的硅化物接触表面的接触孔。 通过将基板暴露于无电镀沉积工艺，用金属接触材料填充孔。 金属接触材料可以包含钴材料，镍材料或其合金。 在填充孔之前，衬底可以暴露于各种预处理工艺，例如预清洗工艺和激活工艺。 预清洗方法可以在湿式清洁工艺或等离子体蚀刻工艺期间去除有机残余物，天然氧化物和其它污染物。 该方法的实施方案还提供附加层的沉积，例如覆盖层。

公开(公告)号：US20060264043A1

公开(公告)日：2006-11-23

申请号：US11385043

申请日：2006-03-20

申请人： Michael Stewart ,  Timothy Weidman ,  Arulkumar Shanmugasundram ,  David Eaglesham

发明人： Michael Stewart ,  Timothy Weidman ,  Arulkumar Shanmugasundram ,  David Eaglesham

IPC分类号： H01L21/44

CPC分类号： C23C18/1893 ,  B82Y30/00 ,  C23C18/1651 ,  C23C18/32 ,  C23C18/34 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/288 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76847 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76874 ,  H01L21/76879 ,  H01L21/76889

摘要： Embodiments as described herein provide methods for depositing a material on a substrate during electroless deposition processes, as well as compositions of the electroless deposition solutions. In one embodiment, the substrate contains a contact aperture having an exposed silicon contact surface. In another embodiment, the substrate contains a contact aperture having an exposed silicide contact surface. The apertures are filled with a metal contact material by exposing the substrate to an electroless deposition process. The metal contact material may contain a cobalt material, a nickel material, or alloys thereof. Prior to filling the apertures, the substrate may be exposed to a variety of pretreatment processes, such as preclean processes and activations processes. A preclean process may remove organic residues, native oxides, and other contaminants during a wet clean process or a plasma etch process. Embodiments of the process also provide the deposition of additional layers, such as a capping layer.

摘要翻译： 本文所述的实施方案提供了在无电沉积工艺期间在基材上沉积材料的方法以及无电沉积溶液的组合物。 在一个实施例中，衬底包含具有暴露的硅接触表面的接触孔。 在另一个实施例中，衬底包含具有暴露的硅化物接触表面的接触孔。 通过将基板暴露于无电镀沉积工艺，用金属接触材料填充孔。 金属接触材料可以包含钴材料，镍材料或其合金。 在填充孔之前，衬底可以暴露于各种预处理工艺，例如预清洗工艺和激活工艺。 预清洗方法可以在湿式清洁工艺或等离子体蚀刻工艺期间去除有机残余物，天然氧化物和其它污染物。 该方法的实施方案还提供附加层的沉积，例如覆盖层。

公开(公告)号：US20070099806A1

公开(公告)日：2007-05-03

申请号：US11385041

申请日：2006-03-20

申请人： Michael Stewart ,  Timothy Weidman

发明人： Michael Stewart ,  Timothy Weidman

IPC分类号： C11D7/32

CPC分类号： C11D7/08 ,  C11D7/3218 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/76814

摘要： Embodiments of the invention are provided which include compositions of buffered oxide etch (BOE) solutions and methods that use the BOE solutions during a process to selectively remove a native oxide layer from a substrate surface containing thermal oxide layers. The BOE solutions generally contain HF and alkanolamine compounds. The viscosity of the BOE solution may be adjusted by varying a concentration ratio of at least two alkanolamine compounds. In one example, a BOE solution is provided which includes, by weight, a first alkanolamine concentration within a range from about 0.5% to about 10%, a second alkanolamine concentration within a range from about 0.5% to about 10%, a HF concentration within a range from about 0.5% to about 10%, a water concentration within a range from about 80% to about 98%, a pH value within a range from about 3.5 to about 5, and a viscosity within a range from about 10 cP to about 30 cP.

摘要翻译： 提供本发明的实施方案，其包括缓冲氧化物蚀刻（BOE）溶液的​​组合物和在工艺期间使用BOE溶液从含有热氧化物层的衬底表面选择性去除自然氧化物层的方法。 京东方解决方案通常含有HF和链烷醇胺化合物。 可以通过改变至少两种链烷醇胺化合物的浓度比来调节BOE溶液的粘度。 在一个实例中，提供BOE溶液，其包含按重量计在约0.5％至约10％的范围内的第一链烷醇胺浓度，约0.5％至约10％范围内的第二链烷醇胺浓度，HF浓度 在约0.5％至约10％的范围内，水浓度在约80％至约98％的范围内，pH值在约3.5至约5的范围内，并且粘度在约10cP 至约30cP。

公开(公告)号：US20070108404A1

公开(公告)日：2007-05-17

申请号：US11553878

申请日：2006-10-27

申请人： Michael Stewart ,  Timothy Weidman

发明人： Michael Stewart ,  Timothy Weidman

IPC分类号： C09K13/00

CPC分类号： C11D7/08 ,  C11D7/3218 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/76814

摘要： Embodiments of the invention provide processes to form a high quality contact level connection to devices formed on a substrate. In one embodiment, a method for depositing a material on a substrate is provided which includes exposing the substrate to a buffered oxide etch solution to form a silicon hydride layer during a pretreatment process, depositing a metal silicide layer on the substrate, and depositing a first metal layer (e.g., tungsten) on the metal silicide layer. The buffered oxide etch solution may contain hydrogen fluoride and an alkanolamine compound, such as ethanolamine diethanolamine, or triethanolamine. The metal silicide layer may contain cobalt, nickel, or tungsten and may be deposited by an electroless deposition process. In one example, the substrate is exposed to an electroless deposition solution containing a solvent and a complexed metal compound.

摘要翻译： 本发明的实施例提供了与形成在基板上的装置形成高质量接触电平连接的方法。 在一个实施例中，提供了一种用于在衬底上沉积材料的方法，其包括将衬底暴露于缓冲氧化物蚀刻溶液以在预处理工艺期间形成硅氢化物层，在衬底上沉积金属硅化物层，以及沉积第一 在金属硅化物层上的金属层（例如，钨）。 缓冲氧化物蚀刻溶液可以含有氟化氢和链烷醇胺化合物，例如乙醇胺二乙醇胺或三乙醇胺。 金属硅化物层可以包含钴，镍或钨，并且可以通过无电沉积工艺沉积。 在一个实例中，将基底暴露于含有溶剂和络合的金属化合物的无电沉积溶液。

公开(公告)号：US10197330B2

公开(公告)日：2019-02-05

申请号：US15419297

申请日：2017-01-30

申请人： Michael Stewart

发明人： Michael Stewart

IPC分类号： F26B3/28 ,  F26B23/00 ,  D06F59/04 ,  F26B9/00 ,  F26B21/06 ,  A61L2/10 ,  A61L2/16

摘要： An apparatus for drying a garment is provided, including a main member, at least one light source, and at least one air source. The main member includes an outer surface configured for receiving the garment, and a plurality of apertures disposed along the outer surface. The light source emits a UV-C light, and the air source blows air. The UV-C light from the light source and air from the air source can at least partially pass through the outer surface. The apertures are in communication with at least the air source.

公开(公告)号：US20160271803A1

公开(公告)日：2016-09-22

申请号：US15167309

申请日：2016-05-27

申请人： Michael Stewart

发明人： Michael Stewart

IPC分类号： B25J11/00 ,  A61L2/24 ,  A61L2/10 ,  B25J5/00 ,  B25J19/02

CPC分类号： B25J11/0085 ,  A61L2/10 ,  A61L2/24 ,  A61L2202/14 ,  A61L2202/16 ,  B25J5/007 ,  B25J9/08 ,  B25J19/02 ,  B62D57/024 ,  B62D57/032 ,  G05D1/0038 ,  G05D2201/0203 ,  Y10S901/01

摘要： A robotic platform is provided having a disinfection unit configured to disinfect a technical area.

摘要翻译： 提供了一种机器人平台，其具有被配置为消毒技术区域的消毒单元。

公开(公告)号：US08898929B2

公开(公告)日：2014-12-02

申请号：US13591537

申请日：2012-08-22

申请人： Michael Stewart

发明人： Michael Stewart

IPC分类号： F26B23/00 ,  F26B3/28 ,  D06F59/04 ,  F26B9/00

CPC分类号： F26B3/283 ,  A61L2/10 ,  A61L2/16 ,  A61L2202/11 ,  A61L2202/26 ,  D06F59/04 ,  F26B3/28 ,  F26B9/003 ,  F26B21/06 ,  F26B23/00

摘要： An apparatus for drying gloves is provided, including a main member, at least one light source, and at least one air source. The main member includes an outer surface configured for receiving a glove, and a plurality of apertures disposed along the outer surface. The light source emits a UV-C light, and the air source blows air. The UV-C light from the light source and air from the air source can at least partially pass through the outer surface. The apertures are in communication with at least the air source.

摘要翻译： 提供了一种用于干燥手套的装置，包括主构件，至少一个光源和至少一个空气源。 主构件包括构造成用于容纳手套的外表面和沿着外表面设置的多个孔。 光源发出UV-C光，空气源吹空气。 来自光源的UV-C光和来自空气源的空气可以至少部分地通过外表面。 孔至少与空气源连通。