公开(公告)号：US20060251801A1

公开(公告)日：2006-11-09

申请号：US11385484

申请日：2006-03-20

申请人： Timothy Weidman ,  Srinivas Gandikota ,  Michael Stewart ,  Avgerinos Gelatos ,  Arulkumar Shanmugasundram

发明人： Timothy Weidman ,  Srinivas Gandikota ,  Michael Stewart ,  Avgerinos Gelatos ,  Arulkumar Shanmugasundram

IPC分类号： B05D5/12

CPC分类号： C23C18/1678 ,  B82Y30/00 ,  C23C16/0227 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/14 ,  C23C18/1608 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/31 ,  C23C18/32 ,  C23C18/34 ,  C23C18/38 ,  C23C18/40 ,  C23C18/48 ,  C25D5/34 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76874 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments of the invention provide a simplified method of filling contact level features formed in a semiconductor device. In general the method includes a novel method of forming a contact level feature that contains a silicide interface and a tungsten CVD deposited layer. The processes discussed below are less complex and less time consuming than other conventional contact level interconnect formation processes and thus will have an improved device yield.

摘要翻译： 本发明的实施例提供了一种填充形成在半导体器件中的接触电平特征的简化方法。 通常，该方法包括形成包含硅化物界面和钨CVD沉积层的接触电平特征的新方法。 下面讨论的方法比其它常规的接触电平互连形成过程更不复杂和更耗时，因此将具有改进的器件产量。

公开(公告)号：US20060246217A1

公开(公告)日：2006-11-02

申请号：US11385047

申请日：2006-03-20

申请人： Timothy Weidman ,  Michael Stewart ,  Zhize Zhu ,  Arulkumar Shanmugasundram ,  Srinivas Gandikota ,  Avgerinos Gelatos

发明人： Timothy Weidman ,  Michael Stewart ,  Zhize Zhu ,  Arulkumar Shanmugasundram ,  Srinivas Gandikota ,  Avgerinos Gelatos

IPC分类号： B28B19/00 ,  C23C18/34

CPC分类号： C23C18/1893 ,  B82Y30/00 ,  C23C18/1651 ,  C23C18/32 ,  C23C18/34 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/288 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76847 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76874 ,  H01L21/76879 ,  H01L21/76889

摘要： Embodiments as described herein provide methods for depositing a material on a substrate during electroless deposition processes, as well as compositions of the electroless deposition solutions. In one embodiment, the substrate contains a contact aperture having an exposed silicon contact surface. In another embodiment, the substrate contains a contact aperture having an exposed silicide contact surface. The apertures are filled with a metal contact material by exposing the substrate to an electroless deposition process. The metal contact material may contain a cobalt material, a nickel material, or alloys thereof. Prior to filling the apertures, the substrate may be exposed to a variety of pretreatment processes, such as preclean processes and activations processes. A preclean process may remove organic residues, native oxides, and other contaminants during a wet clean process or a plasma etch process. Embodiments of the process also provide the deposition of additional layers, such as a capping layer.

摘要翻译： 本文所述的实施方案提供了在无电沉积工艺期间在基材上沉积材料的方法以及无电沉积溶液的组合物。 在一个实施例中，衬底包含具有暴露的硅接触表面的接触孔。 在另一个实施例中，衬底包含具有暴露的硅化物接触表面的接触孔。 通过将基板暴露于无电镀沉积工艺，用金属接触材料填充孔。 金属接触材料可以包含钴材料，镍材料或其合金。 在填充孔之前，衬底可以暴露于各种预处理工艺，例如预清洗工艺和激活工艺。 预清洗方法可以在湿式清洁工艺或等离子体蚀刻工艺期间去除有机残余物，天然氧化物和其它污染物。 该方法的实施方案还提供附加层的沉积，例如覆盖层。

公开(公告)号：US20060251800A1

公开(公告)日：2006-11-09

申请号：US11385344

申请日：2006-03-20

申请人： Timothy Weidman ,  Kapila Wijekoon ,  Zhize Zhu ,  Avgerinos Gelatos ,  Amit Khandelwal ,  Arulkumar Shanmugasundram ,  Michael Yang ,  Fang Mei ,  Farhad Moghadam

发明人： Timothy Weidman ,  Kapila Wijekoon ,  Zhize Zhu ,  Avgerinos Gelatos ,  Amit Khandelwal ,  Arulkumar Shanmugasundram ,  Michael Yang ,  Fang Mei ,  Farhad Moghadam

IPC分类号： B05D5/12

CPC分类号： C23C18/1678 ,  B82Y30/00 ,  C23C16/0227 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/14 ,  C23C18/1608 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/31 ,  C23C18/32 ,  C23C18/34 ,  C23C18/38 ,  C23C18/40 ,  C23C18/48 ,  C25D5/34 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76874 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments of the invention generally provide methods of filling contact level features formed in a semiconductor device by depositing a barrier layer over the contact feature and then filing the layer using an PVD, CVD, ALD, electrochemical plating process (ECP) and/or electroless deposition processes. In one embodiment, the barrier layer has a catalytically active surface that will allow the electroless deposition of a metal on the barrier layer. In one aspect, the electrolessly deposited metal is copper or a copper alloy. In one aspect, the contact level feature is filled with a copper alloy by use of an electroless deposition process. In another aspect, a copper alloy is used to from a thin conductive copper layer that is used to subsequently fill features with a copper containing material by use of an ECP, PVD, CVD, and/or ALD deposition process. In one embodiment, a portion of the barrier layer is purposely allowed to react with traces of residual oxide at the silicon junction of the contact level feature to form a low resistance connection.

公开(公告)号：US20060252252A1

公开(公告)日：2006-11-09

申请号：US11385290

申请日：2006-03-20

申请人： Zhize Zhu ,  Timothy Weidman ,  Michael Stewart ,  Arulkumar Shanmugasundram ,  Nety Krishna ,  Anthony Konecni

发明人： Zhize Zhu ,  Timothy Weidman ,  Michael Stewart ,  Arulkumar Shanmugasundram ,  Nety Krishna ,  Anthony Konecni

IPC分类号： H01L21/4763 ,  H01L21/44

CPC分类号： C23C18/1678 ,  B82Y30/00 ,  C23C16/0227 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/14 ,  C23C18/1608 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/31 ,  C23C18/32 ,  C23C18/34 ,  C23C18/38 ,  C23C18/40 ,  C23C18/48 ,  C25D5/34 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76874 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： In one embodiment, a method for depositing a material on a substrate is provided which includes positioning a substrate containing a contact within a process chamber, exposing the substrate to at least one pretreatment step and depositing a fill the contact vias by an electroless deposition process. The pretreatment step contains multiple processes for exposing the substrate to a wet-clean solution, a hydrogen fluoride solution, a tungstate solution, a palladium activation solution, an acidic rinse solution, a complexing agent solution or combinations thereof. Generally, the HARC via contains a tungsten oxide surface and the shallow contact via may contain a tungsten silicide surface. In some example, the substrate is pretreated such that both vias are filled at substantially the same time by a nickel-containing material through an electroless deposition process.

摘要翻译： 在一个实施例中，提供了一种用于在衬底上沉积材料的方法，其包括将包含接触件的衬底定位在处理室内，将衬底暴露于至少一个预处理步骤，并通过无电沉积工艺沉积接触孔。 预处理步骤包含用于将基底暴露于湿清洁溶液，氟化氢溶液，钨酸盐溶液，钯活化溶液，酸性漂洗溶液，络合剂溶液或其组合的多种方法。 通常，HARC通孔包含氧化钨表面，浅接触通孔可以含有硅化钨表面。 在一些实例中，将基材预处理，使得通过无电镀沉积工艺通过含镍材料在几乎相同的时间填充两个通孔。

公开(公告)号：US20070111519A1

公开(公告)日：2007-05-17

申请号：US11428230

申请日：2006-06-30

申请人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Allen D'Ambra ,  Timothy Weidman ,  Michael Stewart ,  Eugene Rabinovich ,  Svetlana Sherman ,  Manoocher Birang ,  Yaxin Wang ,  Michael Yang ,  Bradley Hansen

发明人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Allen D'Ambra ,  Timothy Weidman ,  Michael Stewart ,  Eugene Rabinovich ,  Svetlana Sherman ,  Manoocher Birang ,  Yaxin Wang ,  Michael Yang ,  Bradley Hansen

IPC分类号： H01L21/44

CPC分类号： H01L21/288 ,  C23C18/1619 ,  C23C18/1653 ,  C23C18/168 ,  C23C18/1682 ,  C23C18/1685 ,  C23C18/1689 ,  C25D7/123 ,  C25D17/001 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/02087 ,  H01L21/28518 ,  H01L21/28562 ,  H01L21/67051 ,  H01L21/6719 ,  H01L21/6723 ,  H01L21/67751 ,  H01L21/68785 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76873 ,  H01L21/76874

摘要： Embodiments of the invention provide methods for depositing a material onto a surface of a substrate by using one or more electroless, electrochemical plating, CVD and/or ALD processes. Embodiments of the invention provide a method for depositing a seed layer on a substrate with an electroless process and to subsequently fill interconnect features on the substrate with an ECP process on a single substrate processing platform. Other aspects provide a method for depositing a seed layer on a substrate, fill interconnect features on a substrate, or sequentially deposit both a seed layer and fill interconnect features on the substrate. One embodiment provides a method for forming a capping layer over substrate interconnects. Methods include the use of a vapor dryer for pre- and post-deposition cleaning of substrates as well as a brush box chamber for post-deposition cleaning.

摘要翻译： 本发明的实施方案提供了通过使用一种或多种化学镀，CVD和/或ALD工艺将材料沉积到衬底的表面上的方法。 本发明的实施方案提供了一种用于在基板上沉积种子层的方法，该方法具有无电解方法，并随后在单个基板处理平台上用ECP工艺填充基板上的互连特征。 其它方面提供了一种用于在衬底上沉积种子层的方法，在衬底上填充互连特征，或者在衬底上顺序地沉积种子层和填充互连特征。 一个实施例提供了一种在衬底互连上形成覆盖层的方法。 方法包括使用蒸气干燥器进行基板的沉积前和沉积后清洁以及用于后沉积清洁的刷盒室。

公开(公告)号：US20060264043A1

公开(公告)日：2006-11-23

申请号：US11385043

申请日：2006-03-20

申请人： Michael Stewart ,  Timothy Weidman ,  Arulkumar Shanmugasundram ,  David Eaglesham

发明人： Michael Stewart ,  Timothy Weidman ,  Arulkumar Shanmugasundram ,  David Eaglesham

IPC分类号： H01L21/44

CPC分类号： C23C18/1893 ,  B82Y30/00 ,  C23C18/1651 ,  C23C18/32 ,  C23C18/34 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/288 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76847 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76874 ,  H01L21/76879 ,  H01L21/76889

摘要： Embodiments as described herein provide methods for depositing a material on a substrate during electroless deposition processes, as well as compositions of the electroless deposition solutions. In one embodiment, the substrate contains a contact aperture having an exposed silicon contact surface. In another embodiment, the substrate contains a contact aperture having an exposed silicide contact surface. The apertures are filled with a metal contact material by exposing the substrate to an electroless deposition process. The metal contact material may contain a cobalt material, a nickel material, or alloys thereof. Prior to filling the apertures, the substrate may be exposed to a variety of pretreatment processes, such as preclean processes and activations processes. A preclean process may remove organic residues, native oxides, and other contaminants during a wet clean process or a plasma etch process. Embodiments of the process also provide the deposition of additional layers, such as a capping layer.

摘要翻译： 本文所述的实施方案提供了在无电沉积工艺期间在基材上沉积材料的方法以及无电沉积溶液的组合物。 在一个实施例中，衬底包含具有暴露的硅接触表面的接触孔。 在另一个实施例中，衬底包含具有暴露的硅化物接触表面的接触孔。 通过将基板暴露于无电镀沉积工艺，用金属接触材料填充孔。 金属接触材料可以包含钴材料，镍材料或其合金。 在填充孔之前，衬底可以暴露于各种预处理工艺，例如预清洗工艺和激活工艺。 预清洗方法可以在湿式清洁工艺或等离子体蚀刻工艺期间去除有机残余物，天然氧化物和其它污染物。 该方法的实施方案还提供附加层的沉积，例如覆盖层。

公开(公告)号：US07273813B2

公开(公告)日：2007-09-25

申请号：US11053501

申请日：2005-02-08

申请人： Ramin Emami ,  Timothy Weidman ,  Sergey Lopatin ,  Hongbin Fang ,  Arulkumar Shanmugasundram

发明人： Ramin Emami ,  Timothy Weidman ,  Sergey Lopatin ,  Hongbin Fang ,  Arulkumar Shanmugasundram

IPC分类号： H01L21/44

CPC分类号： C23C18/1844 ,  C11D7/06 ,  C11D7/08 ,  C11D7/265 ,  C11D11/0047 ,  C23F1/18 ,  C23G1/103 ,  H01L21/02074 ,  H01L21/76826 ,  H01L21/76849 ,  H01L21/76877 ,  H01L21/76883

摘要： A method and cleaning solution that removes contaminants from a dielectric material and polished surfaces of copper interconnect structures prior to an electroless deposition of a capping layer without substantially adversely affecting the interconnect formed therefrom are disclosed. The cleaning solution includes combinations of a core mixture and sulfuric acid or sulfonic compounds such as sulfonic acids that include methanesulfonic acid. In one embodiment, the core mixture includes a citric acid solution and a pH adjuster such as tetra-methyl ammonium hydroxide or ammonia. One embodiment of the method includes providing a planarized substrate, applying the cleaning solution to the substrate to simultaneously clean at least one metal feature and a dielectric material of the substrate, and depositing the metal capping layer selectively on the at least one metal feature using electroless deposition.

摘要翻译： 公开了一种方法和清洁溶液，其在电绝缘沉积覆盖层之前从电介质材料和铜互连结构的抛光表面去除污染物，而基本上不利地影响由其形成的互连。 清洁溶液包括核混合物和硫酸或磺酸化合物如包括甲磺酸的磺酸的组合。 在一个实施方案中，核心混合物包括柠檬酸溶液和pH调节剂如四甲基氢氧化铵或氨。 该方法的一个实施例包括提供平坦化的基板，将清洁溶液施加到基板上以同时清洁基板的至少一个金属特征和介电材料，并且使用无电镀将金属覆盖层选择性地沉积在至少一个金属特征上 沉积

公开(公告)号：US20050263066A1

公开(公告)日：2005-12-01

申请号：US11043442

申请日：2005-01-26

申请人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Russell Ellwanger ,  Ian Pancham ,  Ramakrishna Cheboli ,  Timothy Weidman

发明人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Russell Ellwanger ,  Ian Pancham ,  Ramakrishna Cheboli ,  Timothy Weidman

IPC分类号： B05D3/10 ,  C23C18/16 ,  C23F1/00 ,  H01L21/00 ,  H01L21/306

CPC分类号： H01L21/67155 ,  C23C18/1628 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/6723

摘要： An electroless deposition system is provided. The system includes a processing mainframe, at least one substrate cleaning station positioned on the mainframe, and an electroless deposition station positioned on the mainframe. The electroless deposition station includes an environmentally controlled processing enclosure, a first processing station configured to clean and activate a surface of a substrate, a second processing station configured to electrolessly deposit a layer onto the surface of the substrate, and a substrate transfer shuttle positioned to transfer substrates between the first and second processing stations. The system also includes a substrate transfer robot positioned on the mainframe and configured to access an interior of the processing enclosure. The system also includes a substrate a fluid delivery system that is configured to deliver a processing fluid by use of a spraying process to a substrate mounted in the processing enclosure.

摘要翻译： 提供无电沉积系统。 该系统包括处理主机，位于主机上的至少一个基板清洗台和位于主机上的无电沉积站。 无电沉积站包括环境受控的处理外壳，被配置为清洁和激活基板的表面的第一处理站，被配置为将层无电沉积到基板的表面上的第二处理站，以及位于 在第一和第二处理站之间传送衬底。 该系统还包括位于主机上并被配置为访问处理外壳内部的基板传送机器人。 该系统还包括一个流体输送系统，该流体输送系统被配置成通过使用喷射过程将处理流体输送到安装在处理外壳中的基板。

公开(公告)号：US20070099417A1

公开(公告)日：2007-05-03

申请号：US11329785

申请日：2006-01-10

申请人： Hongbin Fang ,  Timothy Weidman ,  Fang Mei ,  Yaxin Wang ,  Arulkumar Shanmugasundram ,  Christopher Bencher ,  Mehul Naik

发明人： Hongbin Fang ,  Timothy Weidman ,  Fang Mei ,  Yaxin Wang ,  Arulkumar Shanmugasundram ,  Christopher Bencher ,  Mehul Naik

IPC分类号： H01L21/469

CPC分类号： H01L21/76843 ,  H01L21/76829 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76862 ,  H01L21/76864

摘要： A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on the substrate, reducing oxide formation on the capping layer, and then depositing a dielectric material. A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on a substrate, exposing the capping layer to a plasma, heating the substrate to more than about 100° C., and depositing a low dielectric constant material.

摘要翻译： 一种用于处理半导体衬底的方法和装置，包括在形成在衬底上的导电材料上沉积覆盖层，减少覆盖层上的氧化物形成，然后沉积电介质材料。 一种用于处理半导体衬底的方法和装置，包括在形成在衬底上的导电材料上沉积覆盖层，将覆盖层暴露于等离子体，将衬底加热到​​大于约100℃，以及沉积低介电常数材料 。

公开(公告)号：US20060246699A1

公开(公告)日：2006-11-02

申请号：US11385038

申请日：2006-03-20

申请人： Timothy Weidman ,  Arulkumar Shanmugasundram ,  Kapila Wijekoon ,  Schubert Chu ,  Frederick Wu ,  Kavita Shah

发明人： Timothy Weidman ,  Arulkumar Shanmugasundram ,  Kapila Wijekoon ,  Schubert Chu ,  Frederick Wu ,  Kavita Shah

IPC分类号： H01L21/44

CPC分类号： C23C18/40 ,  C23C18/1608 ,  C23C18/165 ,  H01L21/288 ,  H01L21/76802 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76877

摘要： Embodiments of the invention provide methods for forming conductive materials within contact features on a substrate by depositing a seed layer within a feature and subsequently filling the feature with a copper-containing material during an electroless deposition process. In one example, a copper electroless deposition solution contains levelers to form convexed or concaved copper surfaces. In another example, a seed layer is selectively deposited on the bottom surface of the aperture while leaving the sidewalls substantially free of the seed material during a collimated PVD process. In another example, the seed layer is conformably deposited by a PVD process and subsequently, a portion of the seed layer and the underlayer are plasma etched to expose an underlying contact surface. In another example, a ruthenium seed layer is formed on an exposed contact surface by an ALD process utilizing the chemical precursor ruthenium tetroxide.

摘要翻译： 本发明的实施例提供了通过在特征内沉积种子层并随后在无电沉积工艺期间用含铜材料填充该特征而在基底上的接触特征内形成导电材料的方法。 在一个实例中，铜无电解沉积溶液含有形成凸形或凹陷铜表面的矫直机。 在另一个实例中，在准直的PVD工艺期间，将籽晶层选择性地沉积在孔的底表面上，同时留下基本上不含种子材料的侧壁。 在另一个实例中，种子层通过PVD工艺顺应地沉积，随后种子层和底层的一部分被等离子体蚀刻以暴露下面的接触表面。 在另一个实例中，通过使用化学前体四氧化钌的ALD工艺在暴露的接触表面上形成钌籽晶层。