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    Catalyst for removing aromatic halogenated compounds comprising dioxin, carbon monoxide, and nitrogen oxide and use thereof
    1.
    发明申请
    Catalyst for removing aromatic halogenated compounds comprising dioxin, carbon monoxide, and nitrogen oxide and use thereof 审中-公开
    用于除去包含二恶英，一氧化碳和氮氧化物的芳族卤代化合物的催化剂及其用途

    公开(公告)号：US20060258528A1

    公开(公告)日：2006-11-16

    申请号：US11491139

    申请日：2006-07-24

    申请人： Du-Soung Kim ,  Jihn-Koo Lee ,  Bong-Soo Kim ,  Seung-Jae Lee ,  Myoung-Jin Kha

    发明人： Du-Soung Kim ,  Jihn-Koo Lee ,  Bong-Soo Kim ,  Seung-Jae Lee ,  Myoung-Jin Kha

    IPC分类号： B01J23/00

    CPC分类号： B01J21/063 ,  B01D53/865 ,  B01D53/8662 ,  B01D2257/2064 ,  B01J23/18 ,  B01J23/682 ,  B01J23/683 ,  B01J23/686 ,  B01J23/687 ,  B01J27/053 ,  B01J35/04 ,  B01J37/0242

    摘要： The present invention relates to a catalyst for removing aromatic halogenated compounds comprising dioxin, carbon monoxide and nitrogen oxide simultaneously and a method for preparing the catalyst, more particularly, a catalyst comprising 0.1 to 5% by weight of vanadium, 1 to 12% by weight of metals in 6A family and 0.1 to 10% by weight of Ag in titania carrier or, alternatively, a catalyst produced by impregnating said catalyst in 0.05 to 1M sulfuric acid solution to carry out acid treatment. The catalyst according to the present invention has improved efficiency for removing 1,2-dichlorobenzene as a reactant model of dioxin and carbon monoxide rather than existing catalysts and also, alternative efficiency for removing nitrogen oxide substantially equal to commonly known catalysts, so that the catalyst can effectively control various air pollutants contained in exhaust gas.

    摘要翻译： 本发明涉及一种用于同时除去包含二恶英，一氧化碳和氮氧化物的芳族卤代化合物的催化剂，以及一种制备该催化剂的方法，更具体地说，涉及一种催化剂，其包含0.1-5重量％的钒，1至12重量％ 的6A族金属和0.1〜10重量％的Ag在二氧化钛载体中，或者是通过将所述催化剂浸渍在0.05〜1M硫酸溶液中进行酸处理而制备的催化剂。 根据本发明的催化剂具有提高的作为二恶英和一氧化碳的反应物模型的1,2-二氯苯的效率，而不是现有的催化剂，以及用于除去基本上等于通常已知的催化剂的氮氧化物的替代效率，使得催化剂 可有效控制废气中含有的各种空气污染物。

    Method and apparatus for managing digital rights of secure removable media
    4.
    发明授权
    Method and apparatus for managing digital rights of secure removable media 有权
    用于管理安全可移动媒体的数字权利的方法和装置

    公开(公告)号：US08683610B2

    公开(公告)日：2014-03-25

    申请号：US13566700

    申请日：2012-08-03

    申请人： Seung-Jae Lee ,  Te-Hyun Kim

    发明人： Seung-Jae Lee ,  Te-Hyun Kim

    IPC分类号： G06F7/04

    CPC分类号： H04L9/3273 ,  G06F21/10 ,  H04L9/3247 ,  H04L63/0428 ,  H04L63/10 ,  H04L63/12 ,  H04L2209/603 ,  H04L2463/062 ,  H04L2463/101

    摘要： A terminal for managing digital rights of a memory card inserted into the terminal and has a processor and a memory, the digital rights allowing the terminal to access digital contents. The terminal includes a processor configured to manage a digital rights and to exchange information with the memory card, the information including a terminal ID and a memory card ID; perform a mutual authentication procedure with the memory card; receive, from a contents provider, a trigger message which indicates to the terminal that a digital rights for the memory card is prepared in the contents provider; if a parameter included in the trigger message does not indicate the memory card, perform a procedure for obtaining a digital rights for the terminal; and if a parameter included in the trigger message indicates the memory card, perform a procedure for requesting a digital rights for the memory card.

    摘要翻译： 一种用于管理插入终端中的存储卡的数字版权的终端，具有处理器和存储器，该数字版权允许终端访问数字内容。 终端包括处理器，被配置为管理数字版权并与存储卡交换信息，该信息包括终端ID和存储卡ID; 与存储卡执行相互认证程序; 从内容提供者接收触发消息，向终端指示在内容提供商中准备存储卡的数字版权; 如果包括在触发消息中的参数不指示存储卡，则执行用于获得终端的数字版权的过程; 并且如果包括在触发消息中的参数指示存储卡，则执行请求存储卡的数字版权的过程。

    Method of manufacturing semiconductor device
    5.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08617991B2

    公开(公告)日：2013-12-31

    申请号：US13526960

    申请日：2012-06-19

    申请人： Jung-Chan Lee ,  Yoo-Jung Lee ,  Ki-Hyung Ko ,  Dae-Young Kwak ,  Seung-Jae Lee ,  Jae-Sung Hur ,  Sang-Bom Kang ,  Cheol Kim ,  Bo-Un Yoon

    发明人： Jung-Chan Lee ,  Yoo-Jung Lee ,  Ki-Hyung Ko ,  Dae-Young Kwak ,  Seung-Jae Lee ,  Jae-Sung Hur ,  Sang-Bom Kang ,  Cheol Kim ,  Bo-Un Yoon

    IPC分类号： H01L21/44

    CPC分类号： H01L29/4983 ,  H01L21/76895 ,  H01L21/82345 ,  H01L29/49 ,  H01L29/66545 ,  H01L29/78

    摘要： A method of manufacturing a semiconductor device includes forming an interlayer dielectric film that has first and second trenches on first and second regions of a substrate, respectively, forming a first metal layer along a sidewall and a bottom surface of the first trench and along a top surface of the interlayer dielectric film in the first region, forming a second metal layer along a sidewall and a bottom surface of the second trench and along a top surface of the interlayer dielectric film in the second region, forming a first sacrificial layer pattern on the first metal layer such that the first sacrificial layer fills a portion of the first trench, forming a first electrode layer by etching the first metal layer and the second metal layer using the first sacrificial layer pattern, and removing the first sacrificial layer pattern.

    摘要翻译： 一种制造半导体器件的方法包括：在衬底的第一和第二区域上分别形成具有第一和第二沟槽的层间电介质膜，沿着第一沟槽的侧壁和底表面沿顶部形成第一金属层 在所述第一区域中的所述层间电介质膜的表面，沿着所述第二沟槽的侧壁和底表面沿着所述第二区域中的所述层间电介质膜的顶表面形成第二金属层，在所述第二区域中形成第一牺牲层图案 第一金属层，使得第一牺牲层填充第一沟槽的一部分，通过使用第一牺牲层图案蚀刻第一金属层和第二金属层形成第一电极层，以及去除第一牺牲层图案。

    Method for managing user domain in digital rights management and system thereof
    8.
    发明授权
    Method for managing user domain in digital rights management and system thereof 有权
    数字版权管理中的用户域管理方法及其系统

    公开(公告)号：US07930250B2

    公开(公告)日：2011-04-19

    申请号：US11760571

    申请日：2007-06-08

    申请人： Seung-Jae Lee ,  Te-Hyun Kim ,  Youn-Sung Chu ,  Kiran Kumar Keshavamurthy

    发明人： Seung-Jae Lee ,  Te-Hyun Kim ,  Youn-Sung Chu ,  Kiran Kumar Keshavamurthy

    IPC分类号： G06F21/00

    CPC分类号： G06F21/10

    摘要： A method for managing a specific domain (or user domain), for example leaving the domain by a specific device after fully returning a Rights Object (RO) taken by the specific device, instead of deactivating the RO, when leaving the specific domain, the method in which the device desiring to leave the specific domain moves its RO to another device desiring to join the specific domain and thereafter leaves the specific domain under the control of a Domain Authority/Domain Enforcement Agent (DA/DEA).

    摘要翻译： 一种用于管理特定域（或用户域）的方法，例如在完全返回特定设备所采用的权限对象（RO）之后由特定设备离开域，而不是在离开特定域时停用RO 方法，其中期望离开特定域的设备将其RO移动到希望加入特定域的另一个设备，然后将特定域保留在域授权/域强制代理（DA / DEA）的控制之下。

    RECHARGEABLE BATTERY
    9.
    发明申请
    RECHARGEABLE BATTERY 有权
    可充电电池

    公开(公告)号：US20110086262A1

    公开(公告)日：2011-04-14

    申请号：US12860692

    申请日：2010-08-20

    申请人： Jun-Sik Kim ,  Po-Jung Hwang ,  Seung-Jae Lee ,  Yoo-Myung Kang ,  Sung-Soo Kim

    发明人： Jun-Sik Kim ,  Po-Jung Hwang ,  Seung-Jae Lee ,  Yoo-Myung Kang ,  Sung-Soo Kim

    IPC分类号： H01M2/02

    CPC分类号： H01M2/0212 ,  H01M2/0277 ,  H01M2/0285 ,  H01M2/0287 ,  H01M2/266 ,  H01M2/30

    摘要： A rechargeable battery is disclosed. The rechargeable battery comprises: a central electrode portion comprising a positive electrode, a negative electrode and a separator; a first electrode portion extending from a first end of the central electrode portion; a second electrode portion extending from a second end of the central electrode portion opposite the first end; a central case enclosing the central electrode portion; a first electrode case enclosing the first electrode portion, wherein the first electrode case is coupled to the central case such that an overlapping part of the first electrode case encloses a part of the central electrode portion at the first end, and the central case encloses the overlapping part of the first electrode case; and a second electrode case enclosing the second electrode portion, wherein the second electrode case is coupled to the central case such that an overlapping part of the second electrode case encloses a part of the central electrode portion at the second end, and the central case encloses the overlapping part of the second electrode case.

    摘要翻译： 公开了可充电电池。 可充电电池包括：中心电极部分，包括正极，负极和隔板; 从所述中心电极部的第一端延伸的第一电极部; 从所述中心电极部分的与所述第一端相对的第二端延伸的第二电极部分; 封闭中心电极部分的中心壳体; 包围第一电极部分的第一电极壳体，其中第一电极壳体联接到中心壳体，使得第一电极壳体的重叠部分在第一端处包围中心电极部分的一部分，并且中心壳体包围 第一电极壳的重叠部分; 以及封闭所述第二电极部分的第二电极壳体，其中所述第二电极壳体联接到所述中央壳体，使得所述第二电极壳体的重叠部分在所述第二端处包围所述中心电极部分的一部分，并且所述中央壳体包围 第二电极壳体的重叠部分。

    Multi bit flash memory device and method of programming the same
    10.
    发明授权
    Multi bit flash memory device and method of programming the same 有权
    多位闪存器件及其编程方法相同

    公开(公告)号：US07920420B2

    公开(公告)日：2011-04-05

    申请号：US12000209

    申请日：2007-12-11

    申请人： Seung-Jae Lee

    发明人： Seung-Jae Lee

    IPC分类号： G11C16/04

    CPC分类号： G11C16/10 ,  G11C11/5628 ,  G11C16/3454 ,  G11C2211/5621

    摘要： A method of programming a flash memory device may include dividing a plurality of memory cells into a plurality of groups according to a threshold voltage state, the memory cells configured to store multi bit data. The plurality of memory cells may be programmed with a program data. The memory cells of the divided groups may be respectively selected and programmed by divided group during the programming of the plurality of memory cells.

    摘要翻译： 一种对闪速存储器件进行编程的方法可以包括根据阈值电压状态将多个存储器单元分成多个组，存储器单元被配置为存储多位数据。 多个存储器单元可以用程序数据编程。 在多个存储单元的编程期间，分割组的存储单元可以分别被分组选择和编程。