公开(公告)号：US10347504B2

公开(公告)日：2019-07-09

申请号：US15892775

申请日：2018-02-09

Applicant: Entegris, Inc.

Inventor： Steven Bilodeau ,  Emanuel I. Cooper ,  Jaeseok Lee ,  WonLae Kim ,  Jeffrey A. Barnes

IPC: H01L21/311 ,  G03F7/42 ,  H01L21/02 ,  H01L21/027

Abstract: A method and composition for removing bulk and/or ion-implanted resist material from microelectronic devices have been developed. The compositions effectively remove the ion-implanted resist material while not damaging the silicon-containing or germanium-containing materials.

公开(公告)号：US20190074188A1

公开(公告)日：2019-03-07

申请号：US16122940

申请日：2018-09-06

Applicant: Entegris, Inc.

Inventor： Emanuel Cooper ,  Steven Bilodeau ,  Wen-Haw Dai ,  Min-Chieh Yang ,  Sheng-Hung Tu ,  Hsing-Chen Wu ,  Sean Kim ,  SeongJin Hong

IPC: H01L21/311 ,  C09K13/08

Abstract: Described are compositions and methods useful for wet-etching a microelectronic device substrate that includes silicon nitride; the compositions including phosphoric acid, hexafluorosilicic acid, and an amino alkoxy silane, and optionally one or more additional optional ingredients; a wet etching method of a substrate that includes silicon nitride and silicon oxide, that uses a composition as described, can achieve useful or improved silicon nitride etch rate, useful or improved silicon nitride selectivity, a combination of these, and optionally a reduction in particles present at a substrate surface after etching.

公开(公告)号：US10957547B2

公开(公告)日：2021-03-23

申请号：US15742334

申请日：2016-07-07

Applicant: Entegris, Inc.

Inventor： Steven Bilodeau ,  Emanuel I. Cooper

IPC: H01L21/306 ,  C09K13/08 ,  C09K13/06

Abstract: Compositions useful for the selective removal of silicon germanium materials relative to germanium-containing materials and silicon-containing materials from a microelectronic device having same thereon. The removal compositions include at least one diol and are tunable to achieve the required SiGe:Ge removal selectivity and etch rates.

公开(公告)号：US10651045B2

公开(公告)日：2020-05-12

申请号：US16122940

申请日：2018-09-06

Applicant: Entegris, Inc.

Inventor： Emanuel Cooper ,  Steven Bilodeau ,  Wen-Haw Dai ,  Min-Chieh Yang ,  Sheng-Hung Tu ,  Hsing-Chen Wu ,  Sean Kim ,  SeongJin Hong

IPC: H01L21/311 ,  C09K13/08 ,  H01L21/02 ,  H01L21/67 ,  H01L21/306 ,  C30B33/10

Abstract: Described are compositions and methods useful for wet-etching a microelectronic device substrate that includes silicon nitride; the compositions including phosphoric acid, hexafluorosilicic acid, and an amino alkoxy silane, and optionally one or more additional optional ingredients; a wet etching method of a substrate that includes silicon nitride and silicon oxide, that uses a composition as described, can achieve useful or improved silicon nitride etch rate, useful or improved silicon nitride selectivity, a combination of these, and optionally a reduction in particles present at a substrate surface after etching.

公开(公告)号：US10290505B2

公开(公告)日：2019-05-14

申请号：US15752640

申请日：2016-08-12

Applicant: Entegris, Inc.

Inventor： Steven Bilodeau ,  Emanuel I. Cooper ,  Hsing-Chen Wu ,  Min-Chieh Yang

IPC: H01L21/02 ,  H01L21/28 ,  H01L21/762

Abstract: Compositions useful for the passivation of germanium-containing materials on a microelectronic device having same thereon.

公开(公告)号：US20180337253A1

公开(公告)日：2018-11-22

申请号：US15777837

申请日：2016-11-22

Applicant: ENTEGRIS, Inc.

Inventor： Steven Bilodeau ,  Emanuel I. Cooper

IPC: H01L29/66 ,  C09K13/08 ,  H01L21/3213

CPC classification number: C09K13/08 ,  H01L21/32134 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545

Abstract: A removal composition and process for selectively removing p-doped polysilicon (e.g., boron-doped polysilicon) relative to silicon nitride from a microelectronic device having said material thereon. The substrate preferably comprises a high-k/metal gate integration scheme.

公开(公告)号：US10340150B2

公开(公告)日：2019-07-02

申请号：US15103593

申请日：2014-12-16

Applicant: Entegris, Inc. ,  ATMI TAIWAN CO., LTD.

Inventor： Steven Bilodeau ,  Jeffrey A. Barnes ,  Emanuel Cooper ,  Hsing-Chen Wu ,  Sheng-Hung Tu ,  Thomas Parson ,  Min-chieh Yang

IPC: H01L21/3213 ,  C09K13/00 ,  H01L21/3205 ,  H01L29/16 ,  H01L29/26 ,  H01L29/45 ,  C09G1/04 ,  H01L21/24

Abstract: Compositions and methods for selectively removing unreacted metal material (e.g., unreacted nickel) relative to metal germanide (e.g., NiGe), metal-III-V materials, and germanium from microelectronic devices having same thereon. The compositions are substantially compatible with other materials present on the microelectronic device such as low-k dielectrics and silicon nitride.

公开(公告)号：US20180240674A1

公开(公告)日：2018-08-23

申请号：US15752640

申请日：2016-08-12

Applicant: Entegris, Inc.

Inventor： Steven Bilodeau ,  Emanuel I. Cooper ,  Hsing-Chen Wu ,  Min-Chieh Yang

IPC: H01L21/28 ,  H01L21/762 ,  H01L21/02

CPC classification number: H01L21/28255 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02664 ,  H01L21/762

Abstract: Compositions useful for the passivation of germanium-containing materials on a microelectronic device having same thereon.

公开(公告)号：US10991809B2

公开(公告)日：2021-04-27

申请号：US15777837

申请日：2016-11-22

Applicant: ENTEGRIS, Inc.

Inventor： Steven Bilodeau ,  Emanuel I Cooper

IPC: C09K13/08 ,  H01L21/02 ,  H01L21/04 ,  H01L21/225 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3213 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66

Abstract: A removal composition and process for selectively removing p-doped polysilicon (e.g., boron-doped polysilicon) relative to silicon nitride from a microelectronic device having said material thereon. The substrate preferably comprises a high-k/metal gate integration scheme.

公开(公告)号：US10475658B2

公开(公告)日：2019-11-12

申请号：US15108696

申请日：2014-12-29

Applicant: ENTEGRIS, INC.

Inventor： Steven Bilodeau ,  Emanuel I. Cooper

IPC: H01L21/306 ,  H01L21/3213

Abstract: Compositions useful for the selective removal of silicon-containing materials relative to germanium-containing materials, and vice versa, from a microelectronic device having same thereon. The removal compositions include at least one diol and are tunable to achieve the required Si:Ge removal selectivity and etch rates.