摘要:
A semiconductor device and manufacturing the semiconductor device are described. There is provided a method of manufacturing a semiconductor device including, disposing a lead frame inside an outer lead so as to couple between a coupling portion and a coupling acceptance portion, the lead frame including a chip mounting portion and the coupling acceptance portion, the outer lead including a frame portion with outer terminal portions and the coupling portion, disposing a semiconductor chip on the chip mounting portion, connecting between the outer terminal portions and the semiconductor chip with a plurality of wires or leads, sealing the outer terminal portion, the lead frame disposed the semiconductor chip on and the wires or the leads by a mold resin, cutting off the outer terminal portions from the outer lead, and uncoupling the coupling portion from the coupling acceptance portion.
摘要:
A semiconductor device and manufacturing the semiconductor device are described. There is provided a method of manufacturing a semiconductor device including, disposing a lead frame inside an outer lead so as to couple between a coupling portion and a coupling acceptance portion, the lead frame including a chip mounting portion and the coupling acceptance portion, the outer lead including a frame portion with outer terminal portions and the coupling portion, disposing a semiconductor chip on the chip mounting portion, connecting between the outer terminal portions and the semiconductor chip with a plurality of wires or leads, sealing the outer terminal portion, the lead frame disposed the semiconductor chip on and the wires or the leads by a mold resin, cutting off the outer terminal portions from the outer lead, and uncoupling the coupling portion from the coupling acceptance portion.
摘要:
According to one embodiment, a lead frame includes a die pad having a mounting surface on which a semiconductor chip is mounted, plural leads having inner leads and outer leads, and a connecting member that extends from the die pad to both ends of a plurality of leads and connects the die pad and the plurality leads so that the ends of the inner leads are positioned above of the mounting surface.
摘要:
A plurality of semiconductor chips is each arranged over a first conductor. Each of semiconductor chips has a first main electrode, a second main electrode and a control electrode. A second conductor is electrically connected to the second main electrode and has columns each having an upper surface arranged over each of the semiconductor chips and equal to the number of the semiconductor chips. A circuit board has openings penetrated by the columns and equal to the number of the semiconductor chips and has a first insulating film, a third conductive film arranged on a back surface of the first insulating film and electrically connected to the second conductor, and a fourth conductive film arranged on a surface of the first insulating film and electrically connected to the control electrode.
摘要:
A pressure-contact type semiconductor device comprises a plurality of semiconductor elements (IGBTs) which are in pressure contact with one another, and in which first main electrodes are electrically connected to a first common main power source plate (pressure-contact type emitter electrode plate), and second main electrodes are electrically connected to a second common main power source plate (pressure-contact type collector electrode). The pressure-contact type semiconductor device also includes a common control signal board which is constituted by a printed circuit board or a multi-layered printed circuit board, and extends over spaces between rows of semiconductor elements, thereby forming a path for sending a control signal.
摘要:
A press-contact type semiconductor device comprises: a plurality of semiconductor elements each of which has a first main electrode and a control electrode and a second main electrode; a second common main power source plate having the semiconductor elements positioned on a front surface thereof and electrically connected to the second main electrodes; a first common main power source plate arranged on the front surfaces of the semiconductor elements and electrically connected to the first main electrodes; a common control signal/main current plate arranged between semiconductor elements and including at least control signal wiring layers and main current wiring layers; conductive connectors for electrically connecting at least the main current wiring layers and the first common maim power source plate; and conductive elastic members for electrically connecting the main current wiring layers or the first common main power source plate to the conductive connectors by elasticity.
摘要:
According to one embodiment, the base plate includes first and a second faces that are opposed to each other; the second face has a contoured rear surface, and the first area is set in the center of the plate. There is a second area with via holes in the peripheral areas of the center part. Also, the thickness of the second area is less than the thickness of the first area.