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    PLASMA-ENHANCED ETCHING IN AN AUGMENTED PLASMA PROCESSING SYSTEM.
    1.
    发明申请
    PLASMA-ENHANCED ETCHING IN AN AUGMENTED PLASMA PROCESSING SYSTEM. 有权
    在等离子体加工系统中进行等离子体增强蚀刻。

    公开(公告)号：US20140054269A1

    公开(公告)日：2014-02-27

    申请号：US13626793

    申请日：2012-09-25

    申请人： Eric A. Hudson ,  Andrew D. Bailey, III ,  Rajinder Dhindsa

    发明人： Eric A. Hudson ,  Andrew D. Bailey, III ,  Rajinder Dhindsa

    IPC分类号： C23F1/00

    CPC分类号： H01L21/3065 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32192 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32458 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67069

    摘要： Methods for etching a substrate in a plasma processing chamber having at least a primary plasma generating region and a secondary plasma generating region separated from said primary plasma generating region by a semi-barrier structure. The method includes generating a primary plasma from a primary feed gas in the primary plasma generating region. The method also includes generating a secondary plasma from a secondary feed gas in the secondary plasma generating region to enable at least some species from the secondary plasma to migrate into the primary plasma generating region. The method additionally includes etching the substrate with the primary plasma after the primary plasma has been augmented with migrated species from the secondary plasma.

    摘要翻译： 用于蚀刻具有至少一个初级等离子体产生区域的等离子体处理室中的衬底和通过半屏障结构从所述初级等离子体产生区域分离的次级等离子体产生区域的方法。 该方法包括从主要等离子体产生区域中的主进料气体产生主要等离子体。 该方法还包括从次级等离子体产生区域中的二次进料气体产生二次等离子体，以使至少一些来自第二等离子体的物质迁移到初级等离子体产生区域。 该方法另外包括在初级等离子体已经用来自二次等离子体的迁移物质增强之后用初级等离子体蚀刻基板。

    Wiggling control for pseudo-hardmask
    2.
    发明授权
    Wiggling control for pseudo-hardmask 有权
    伪硬掩码的摆动控制

    公开(公告)号：US08304262B2

    公开(公告)日：2012-11-06

    申请号：US13029824

    申请日：2011-02-17

    申请人： Ben-Li Sheu ,  Rajinder Dhindsa ,  Vinay Pohray ,  Eric A. Hudson ,  Andrew D. Bailey, III

    发明人： Ben-Li Sheu ,  Rajinder Dhindsa ,  Vinay Pohray ,  Eric A. Hudson ,  Andrew D. Bailey, III

    IPC分类号： H01L21/00 ,  H01L21/4763 ,  H01L21/461 ,  H01L21/302

    CPC分类号： H01L21/31116 ,  H01L21/31144

    摘要： A method for etching features in an etch layer. A conditioning for a patterned pseudo-hardmask of amorphous carbon or polysilicon disposed over the etch layer is provided, where the conditioning comprises providing a fluorine free deposition gas comprising a hydrocarbon gas, forming a plasma from the fluorine free deposition gas, providing a bias less than 500 volts, and forming a deposition on top of the patterned pseudo-hardmask. The etch layer is etched through the patterned pseudo-hardmask.

    摘要翻译： 一种用于蚀刻蚀刻层中的特征的方法。 提供了一种用于设置在蚀刻层上的非晶碳或多晶硅的图案化伪硬掩模的调理，其中调节包括提供包含烃气体的无氟沉积气体，从无氟沉积气体形成等离子体， 超过500伏，并且在图案化伪硬掩模的顶部上形成沉积物。 蚀刻层通过图案化伪硬掩模进行蚀刻。

    TRIODE REACTOR DESIGN WITH MULTIPLE RADIOFREQUENCY POWERS
    4.
    发明申请
    TRIODE REACTOR DESIGN WITH MULTIPLE RADIOFREQUENCY POWERS 有权
    三重反应器设计与多种无线电功能

    公开(公告)号：US20130126475A1

    公开(公告)日：2013-05-23

    申请号：US13301725

    申请日：2011-11-21

    申请人： Rajinder Dhindsa ,  Alexei Marakhtanov ,  Gerardo Delgadino ,  Eric Hudson ,  Bi Ming Yen ,  Andrew D. Bailey, III

    发明人： Rajinder Dhindsa ,  Alexei Marakhtanov ,  Gerardo Delgadino ,  Eric Hudson ,  Bi Ming Yen ,  Andrew D. Bailey, III

    IPC分类号： C23F1/00 ,  H05H1/24 ,  C23F1/08

    CPC分类号： H01J37/32091 ,  H01J37/32165

    摘要： Methods, systems, and computer programs are presented for semiconductor manufacturing are provided. One wafer processing apparatus includes: a top electrode; a bottom electrode; a first radio frequency (RF) power source; a second RF power source; a third RF power source; a fourth RF power source; and a switch. The first, second, and third power sources are coupled to the bottom electrode. Further, the switch is operable to be in one of a first position or a second position, where the first position causes the top electrode to be connected to ground, and the second position causes the top electrode to be connected to the fourth RF power source.

    摘要翻译： 提供了半导体制造方法，系统和计算机程序。 一个晶片处理装置包括：顶部电极; 底部电极; 第一射频（RF）电源; 第二RF电源; 第三射频电源; 第四RF电源; 和开关。 第一，第二和第三电源耦合到底部电极。 此外，开关可操作为处于第一位置或第二位置之一，其中第一位置使顶部电极连接到地，而第二位置使顶部电极连接到第四RF电源 。

    Local plasma confinement and pressure control arrangement and methods thereof
    5.
    发明授权
    Local plasma confinement and pressure control arrangement and methods thereof 有权
    局部血浆限制和压力控制布置及其方法

    公开(公告)号：US08900398B2

    公开(公告)日：2014-12-02

    申请号：US12872982

    申请日：2010-08-31

    申请人： Rajinder Dhindsa ,  Michael C. Kellogg ,  Babak Kadkhodayan ,  Andrew D. Bailey, III

    发明人： Rajinder Dhindsa ,  Michael C. Kellogg ,  Babak Kadkhodayan ,  Andrew D. Bailey, III

    IPC分类号： H01L21/3065 ,  H01J37/32

    CPC分类号： H01J37/32642 ,  H01J37/32623

    摘要： An arrangement for performing pressure control within a processing chamber substrate processing is provided. The arrangement includes a peripheral ring configured at least for surrounding a confined chamber volume that is configured for sustaining a plasma for etching the substrate during substrate processing. The peripheral ring includes a plurality of slots that is configured at least for exhausting processed byproduct gas from the confined chamber volume during substrate processing. The arrangement also includes a conductive control ring that is positioned next to the peripheral ring and is configured to include plurality of slots. The pressure control is achieved by moving the conductive control ring relative to the peripheral ring such that a first slot on the peripheral ring and a second slot on the conductive control ring are offset with respect to one another in a range of zero offset to full offset.

    摘要翻译： 提供了一种用于在处理室衬底处理中执行压力控制的装置。 该装置包括至少围绕限制室容积配置的外围环，该限定室容积被配置为在衬底处理期间维持用于刻蚀衬底的等离子体。 周边环包括多个狭槽，其被构造成至少在衬底处理期间从受限腔体积中排出经处理的副产物气体。 该布置还包括导电控制环，该导电控制环位于外围环旁边并且被配置为包括多个狭槽。 通过相对于外围环移动导电控制环来实现压力控制，使得外围环上的第一槽和导电控制环上的第二槽相对于彼此在零偏移到全偏移的范围内彼此偏移 。

    RF GROUND RETURN IN PLASMA PROCESSING SYSTEMS AND METHODS THEREFOR
    6.
    发明申请
    RF GROUND RETURN IN PLASMA PROCESSING SYSTEMS AND METHODS THEREFOR 审中-公开
    等离子体处理系统中的RF接地回路及其方法

    公开(公告)号：US20140060739A1

    公开(公告)日：2014-03-06

    申请号：US13662331

    申请日：2012-10-26

    申请人： Rajinder Dhindsa ,  Alexei Marakhtanov ,  Michael C. Kellogg ,  Andy Desepte ,  Andrew D. Bailey, III

    发明人： Rajinder Dhindsa ,  Alexei Marakhtanov ,  Michael C. Kellogg ,  Andy Desepte ,  Andrew D. Bailey, III

    IPC分类号： H01J37/04

    CPC分类号： H01J37/04 ,  H01J37/32091 ,  H01J37/32174

    摘要： Methods and apparatus for operating the plasma processing chamber of a plasma processing tool in at least two modes are disclosed. In the first mode, the substrate-bearing assembly is movable within a gap-adjustable range to adjust the gap between the electrodes to accommodate different processing requirements. In this first mode, RF ground return path continuity is maintained irrespective of the gap distance as long as the gap distance is within the gap-adjustable range. In the second mode, the substrate bearing assembly is capable of moving to further open the gap to accommodate unimpeded substrate loading/unloading.

    摘要翻译： 公开了以至少两种模式操作等离子体处理工具的等离子体处理室的方法和装置。 在第一模式中，基板支承组件可在间隙可调节范围内移动，以调节电极之间的间隙以适应不同的加工要求。 在该第一模式中，只要间隙距离在间隙可调整范围内，RF接地返回路径连续性被维持而与间隙距离无关。 在第二模式中，基板支承组件能够移动以进一步打开间隙以适应无阻碍的基板装载/卸载。

    Pulsed Plasma Chamber in Dual Chamber Configuration
    8.
    发明申请
    Pulsed Plasma Chamber in Dual Chamber Configuration 审中-公开
    脉冲等离子室双腔配置

    公开(公告)号：US20130059448A1

    公开(公告)日：2013-03-07

    申请号：US13227404

    申请日：2011-09-07

    申请人： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Eric Hudson ,  Andrew D. Bailey, III

    发明人： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Eric Hudson ,  Andrew D. Bailey, III

    IPC分类号： H01L21/3065 ,  H01L21/306 ,  C23F1/08

    摘要： Embodiments for processing a substrate in a pulsed plasma chamber are provided. A processing apparatus with two chambers, separated by a plate fluidly connecting the chambers, includes a continuous wave (CW) controller, a pulse controller, and a system controller. The CW controller sets the voltage and the frequency for a first radio frequency (RF) power source coupled to a top electrode. The pulse controller is operable to set voltage, frequency, ON-period duration, and OFF-period duration for a pulsed RF signal generated by a second RF power source coupled to the bottom electrode. The system controller is operable to set parameters to regulate the flow of species between the chambers to assist in the negative-ion etching, to neutralize excessive positive charge on the wafer surface during afterglow in the OFF period, and to assist in the re-striking of the bottom plasma during the ON period.

    摘要翻译： 提供了用于在脉冲等离子体室中处理衬底的实施例。 具有两个腔室的处理装置，由流体连接腔室的板分开，包括连续波（CW）控制器，脉冲控制器和系统控制器。 CW控制器设置耦合到顶部电极的第一射频（RF）电源的电压和频率。 脉冲控制器可操作地为耦合到底部电极的第二RF电源产生的脉冲RF信号设置电压，频率，接通周期持续时间和关闭周期持续时间。 系统控制器可操作以设定参数以调节室之间的物质流动，以辅助负离子蚀刻，以在关闭期间中止余辉期间晶片表面上的过多正电荷，并且辅助重击 在ON期间的底部等离子体。

    WIGGLING CONTROL FOR PSEUDO-HARDMASK
    9.
    发明申请
    WIGGLING CONTROL FOR PSEUDO-HARDMASK 有权
    PSEUDO-HARDMASK的激光控制

    公开(公告)号：US20120214310A1

    公开(公告)日：2012-08-23

    申请号：US13029824

    申请日：2011-02-17

    申请人： Ben-Li Sheu ,  Rajinder Dhindsa ,  Vinay Pohray ,  Eric A. Husdon ,  Andrew D. Bailey, III

    发明人： Ben-Li Sheu ,  Rajinder Dhindsa ,  Vinay Pohray ,  Eric A. Husdon ,  Andrew D. Bailey, III

    IPC分类号： H01L21/311 ,  C23F1/08

    CPC分类号： H01L21/31116 ,  H01L21/31144

    摘要： A method for etching features in an etch layer. A conditioning for a patterned pseudo-hardmask of amorphous carbon or polysilicon disposed over the etch layer is provided, where the conditioning comprises providing a fluorine free deposition gas comprising a hydrocarbon gas, forming a plasma from the fluorine free deposition gas, providing a bias less than 500 volts, and forming a deposition on top of the patterned pseudo-hardmask. The etch layer is etched through the patterned pseudo-hardmask.

    摘要翻译： 一种用于蚀刻蚀刻层中的特征的方法。 提供了一种用于设置在蚀刻层上的非晶碳或多晶硅的图案化伪硬掩模的调理，其中调节包括提供包含烃气体的无氟沉积气体，从无氟沉积气体形成等离子体， 超过500伏，并且在图案化伪硬掩模的顶部上形成沉积物。 蚀刻层通过图案化伪硬掩模进行蚀刻。