公开(公告)号：US06270646B1

公开(公告)日：2001-08-07

申请号：US09473909

申请日：1999-12-28

申请人： Erick Gregory Walton ,  Dean S. Chung ,  Lara Sandra Collins ,  William E. Corbin, Jr. ,  Hariklia Deligianni ,  Daniel Charles Edelstein ,  James E. Fluegel ,  Josef Warren Korejwa ,  Peter S. Locke ,  Cyprian Emeka Uzoh

发明人： Erick Gregory Walton ,  Dean S. Chung ,  Lara Sandra Collins ,  William E. Corbin, Jr. ,  Hariklia Deligianni ,  Daniel Charles Edelstein ,  James E. Fluegel ,  Josef Warren Korejwa ,  Peter S. Locke ,  Cyprian Emeka Uzoh

IPC分类号： C25D522

CPC分类号： C25D17/14 ,  C25D5/06

摘要： A metal plating apparatus is described which includes a compressible member having a conductive surface covering substantially all of the surface of the substrate to be plated. The plating current is thereby transmitted over a wide area of the substrate, rather than a few localized contact points. The compressible member is porous so as to absorb the plating solution and transmit the plating solution to the substrate. The wafer and compressible member may rotate with respect to each other. The compressible member may be at cathode potential or may be a passive circuit element.

摘要翻译： 描述了一种金属电镀装置，其包括具有覆盖待镀基板的基本上所有表面的导电表面的可压缩构件。 因此，电镀电流在衬底的广泛区域上传输，而不是几个局部接触点。 可压缩构件是多孔的，以便吸收电镀液并将电镀液传输到基底。 晶片和可压缩构件可以相对于彼此旋转。 可压缩构件可以处于阴极电位，或者可以是无源电路元件。

公开(公告)号：US06709562B1

公开(公告)日：2004-03-23

申请号：US09348632

申请日：1999-07-06

申请人： Panayotis Constantinou Andricacos ,  Hariklia Deligianni ,  John Owen Dukovic ,  Daniel Charles Edelstein ,  Wilma Jean Horkans ,  Chao-Kun Hu ,  Jeffrey Louis Hurd ,  Kenneth Parker Rodbell ,  Cyprian Emeka Uzoh ,  Kwong-Hon Wong

发明人： Panayotis Constantinou Andricacos ,  Hariklia Deligianni ,  John Owen Dukovic ,  Daniel Charles Edelstein ,  Wilma Jean Horkans ,  Chao-Kun Hu ,  Jeffrey Louis Hurd ,  Kenneth Parker Rodbell ,  Cyprian Emeka Uzoh ,  Kwong-Hon Wong

IPC分类号： C25D712

CPC分类号： H01L21/2885 ,  C25D3/38 ,  C25D7/123 ,  H01L21/76877

摘要： A process is described for the fabrication of submicron interconnect structures for integrated circuit chips. Void-free and seamless conductors are obtained by electroplating Cu from baths that contain additives and are conventionally used to deposit level, bright, ductile, and low-stress Cu metal. The capability of this method to superfill features without leaving voids or seams is unique and superior to that of other deposition approaches. The electromigration resistance of structures making use of Cu electroplated in this manner is superior to the electromigration resistance of AlCu structures or structures fabricated using Cu deposited by methods other than electroplating.

摘要翻译： 描述了用于制造用于集成电路芯片的亚微米互连结构的过程。 通过从包含添加剂的浴中电镀Cu获得无空隙和无缝导体，并且通常用于沉积水平，光亮，延展性和低应力Cu金属。 这种方法在不留下空隙或接缝的情况下超滤特征的能力是独一无二的，优于其他沉积方法。 以这种方式使用电镀Cu的结构的电迁移电阻优于AlCu结构或使用不是电镀方法沉积的Cu制造的结构的电迁移电阻。

公开(公告)号：US06437440B1

公开(公告)日：2002-08-20

申请号：US09759258

申请日：2001-01-16

申请人： Cyril Cabral, Jr. ,  Patrick William Dehaven ,  Daniel Charles Edelstein ,  David Peter Klaus ,  James Manley Pollard, III ,  Carol L. Stanis ,  Cyprian Emeka Uzoh

发明人： Cyril Cabral, Jr. ,  Patrick William Dehaven ,  Daniel Charles Edelstein ,  David Peter Klaus ,  James Manley Pollard, III ,  Carol L. Stanis ,  Cyprian Emeka Uzoh

IPC分类号： H01L2940

CPC分类号： H01L21/76846 ,  H01L21/76843 ,  H01L23/53223 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/5329 ,  H01L24/11 ,  H01L24/12 ,  H01L29/4933 ,  H01L2224/05124 ,  H01L2224/05181 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05684 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/10329 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/013

摘要： An interconnect structure and barrier layer for electrical interconnections is described incorporating a layer of TaN in the hexagonal phase between a first material such as Cu and a second material such as Al, W, and PbSn. A multilayer of TaN in the hexagonal phase and Ta in the alpha phase is also described as a barrier layer. The invention overcomes the problem of Cu diffusion into materials desired to be isolated during temperature anneal at 500° C.

摘要翻译： 描述了用于电互连的互连结构和阻挡层，其结合了诸如Cu的第一材料和诸如Al，W和PbSn的第二材料之间的六方相中的TaN层。 六方相中的TaN多层和α相中的Ta也被描述为阻挡层。 本发明克服了在500℃的温度退火期间将Cu扩散到期望分离的材料中的问题。

公开(公告)号：US5884990A

公开(公告)日：1999-03-23

申请号：US949314

申请日：1997-10-14

申请人： Joachim Norbert Burghartz ,  Daniel Charles Edelstein ,  Christopher Vincent Jahnes ,  Cyprian Emeka Uzoh

发明人： Joachim Norbert Burghartz ,  Daniel Charles Edelstein ,  Christopher Vincent Jahnes ,  Cyprian Emeka Uzoh

IPC分类号： H01F17/00 ,  H01F17/06 ,  H01F27/28 ,  H01F30/16 ,  H01F41/04 ,  H01L23/522 ,  H01F5/00 ,  H01F7/06

CPC分类号： H01L23/5227 ,  H01F17/0006 ,  H01F17/0033 ,  H01F27/2804 ,  H01F27/2895 ,  H01F30/16 ,  H01F41/042 ,  H01F41/046 ,  H01F17/06 ,  H01L2924/0002 ,  Y10T29/4902

摘要： High quality factor (Q) spiral and toroidal inductor and transformer are disclosed that are compatible with silicon very large scale integration (VLSI) processing, consume a small IC area, and operate at high frequencies. The spiral inductor has a spiral metal coil deposited in a trench formed in a dielectric layer over a substrate. The metal coil is enclosed in ferromagnetic liner and cap layers, and is connected to an underpass contact through a metal filled via in the dielectric layer. The spiral inductor also includes ferromagnetic cores lines surrounded by the metal spiral coil. A spiral transformer is formed by vertically stacking two spiral inductors, or placing them side-by-side over a ferromagnetic bridge formed below the metal coils and cores lines. The toroidal inductor includes a toroidal metal coil with a core having ferromagnetic strips. The toroidal metal coil is segmented into two coils each having a pair of ports to form a toroidal transformer.

摘要翻译： 公开了与硅非常大规模集成（VLSI）处理兼容的高质量因子（Q）螺旋和环形电感器和变压器，消耗小的IC区域并在高频下操作。 螺旋电感器具有沉积在形成在衬底上的电介质层中的沟槽中的螺旋金属线圈。 金属线圈封装在铁磁衬垫和盖层中，并通过电介质层中的金属填充通孔连接到地下通道接触。 螺旋电感器还包括由金属螺旋线圈包围的铁磁芯线。 通过垂直堆叠两个螺旋电感器或将它们并排放置在形成在金属线圈和芯线下方的铁磁桥上，形成螺旋形变压器。 环形电感器包括具有铁磁条的芯的环形金属线圈。 环形金属线圈被分成两个线圈，每个线圈具有一对端口以形成环形变压器。

公开(公告)号：US06399496B1

公开(公告)日：2002-06-04

申请号：US09714504

申请日：2000-11-16

申请人： Daniel Charles Edelstein ,  James McKell Edwin Harper ,  Chao-Kun Hu ,  Andrew H. Simon ,  Cyprian Emeka Uzoh

发明人： Daniel Charles Edelstein ,  James McKell Edwin Harper ,  Chao-Kun Hu ,  Andrew H. Simon ,  Cyprian Emeka Uzoh

IPC分类号： H01L2144

CPC分类号： H01L21/76843 ,  H01L21/76871 ,  H01L21/76877 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention discloses an interconnection structure for providing electrical communication with an electronic device which includes a body that is formed substantially of copper and a seed layer of either a copper alloy or a metal that does not contain copper sandwiched between the copper conductor body and the electronic device for improving the electromigration resistance, the adhesion property and other surface properties of the interconnection structure. The present invention also discloses methods for forming an interconnection structure for providing electrical connections to an electronic device by first depositing a seed layer of copper alloy or other metal that does not contain copper on an electronic device, and then forming a copper conductor body on the seed layer intimately bonding to the layer such that electromigration resistance, adhesion and other surface properties of the interconnection structure are improved.

摘要翻译： 本发明公开了一种用于与电子设备进行电连接的互连结构，该电子设备包括基本上由铜形成的主体和不包含铜的铜合金或金属的籽晶层夹在铜导体本体和 用于提高互连结构的电迁移电阻，粘附性等表面性质的电子器件。 本发明还公开了用于形成互连结构的方法，该互连结构用于通过首先在电子器件上沉积铜合金或不含铜的其它金属的种子层，然后在其上形成铜导体，从而提供与电子器件的电连接 种子层紧密地结合到层上，使得互连结构的电迁移阻力，粘附性和其它表面性质得到改善。

公开(公告)号：US06291885B1

公开(公告)日：2001-09-18

申请号：US08896925

申请日：1997-07-18

申请人： Cyril Cabral, Jr. ,  Patrick William DeHaven ,  Daniel Charles Edelstein ,  David Peter Klaus ,  James Manley Pollard, III ,  Carol L. Stanis ,  Cyprian Emeka Uzoh

发明人： Cyril Cabral, Jr. ,  Patrick William DeHaven ,  Daniel Charles Edelstein ,  David Peter Klaus ,  James Manley Pollard, III ,  Carol L. Stanis ,  Cyprian Emeka Uzoh

IPC分类号： H01L2348

CPC分类号： H01L21/76846 ,  H01L21/76843 ,  H01L23/53223 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/5329 ,  H01L24/11 ,  H01L24/12 ,  H01L29/4933 ,  H01L2224/05124 ,  H01L2224/05181 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05684 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/10329 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/013

摘要： An interconnect structure and barrier layer for electrical interconnections is described incorporating a layer of TaN in the hexagonal phase between a first material such as Cu and a second material such as Al, W, and PbSn. A multilayer of TaN in the hexagonal phase and Ta in the alpha phase is also described as a barrier layer. The invention overcomes the problem of Cu diffusion into materials desired to be isolated during temperature anneal at 500° C.

摘要翻译： 描述了用于电互连的互连结构和阻挡层，其结合了诸如Cu的第一材料和诸如Al，W和PbSn的第二材料之间的六方相中的TaN层。 六方相中的TaN多层和α相中的Ta也被描述为阻挡层。 本发明克服了在500℃的温度退火期间将Cu扩散到期望分离的材料中的问题。

公开(公告)号：US6114937A

公开(公告)日：2000-09-05

申请号：US949316

申请日：1997-10-14

申请人： Joachim Norbert Burghartz ,  Daniel Charles Edelstein ,  Christopher Vincent Jahnes ,  Cyprian Emeka Uzoh

发明人： Joachim Norbert Burghartz ,  Daniel Charles Edelstein ,  Christopher Vincent Jahnes ,  Cyprian Emeka Uzoh

IPC分类号： H01F17/00 ,  H01F17/06 ,  H01F27/28 ,  H01F30/16 ,  H01F41/04 ,  H01L23/522 ,  H01F5/00

CPC分类号： H01L23/5227 ,  H01F17/0006 ,  H01F17/0033 ,  H01F27/2804 ,  H01F27/2895 ,  H01F30/16 ,  H01F41/042 ,  H01F41/046 ,  H01F17/06 ,  H01L2924/0002 ,  Y10T29/4902

摘要： High quality factor (Q) spiral and toroidal inductor and transformer are disclosed that are compatible with silicon very large scale integration (VLSI) processing, consume a small IC area, and operate at high frequencies. The spiral inductor has a spiral metal coil deposited in a trench formed in a dielectric layer over a substrate. The metal coil is enclosed in ferromagnetic liner and cap layers, and is connected to an underpass contact through a metal filled via in the dielectric layer. The spiral inductor also includes ferromagnetic cores lines surrounded by the metal spiral coil. A spiral transformer is formed by vertically stacking two spiral inductors, or placing them side-by-side over a ferromagnetic bridge formed below the metal coils and cores lines. The toroidal inductor includes a toroidal metal coil with a core having ferromagnetic strips. The toroidal metal coil is segmented into two coils each having a pair of ports to form a toroidal transformer.

摘要翻译： 公开了与硅非常大规模集成（VLSI）处理兼容的高质量因子（Q）螺旋和环形电感器和变压器，消耗小的IC区域并在高频下操作。 螺旋电感器具有沉积在形成在衬底上的电介质层中的沟槽中的螺旋金属线圈。 金属线圈封装在铁磁衬垫和盖层中，并通过电介质层中的金属填充通孔连接到地下通道接触。 螺旋电感器还包括由金属螺旋线圈包围的铁磁芯线。 通过垂直堆叠两个螺旋电感器或将它们并排放置在形成在金属线圈和芯线下方的铁磁桥上，形成螺旋形变压器。 环形电感器包括具有铁磁条的芯的环形金属线圈。 环形金属线圈被分成两个线圈，每个线圈具有一对端口以形成环形变压器。

公开(公告)号：US6054329A

公开(公告)日：2000-04-25

申请号：US949315

申请日：1997-10-14

申请人： Joachim Norbert Burghartz ,  Daniel Charles Edelstein ,  Christopher Vincent Jahnes ,  Cyprian Emeka Uzoh

发明人： Joachim Norbert Burghartz ,  Daniel Charles Edelstein ,  Christopher Vincent Jahnes ,  Cyprian Emeka Uzoh

IPC分类号： H01F17/00 ,  H01F17/06 ,  H01F27/28 ,  H01F30/16 ,  H01F41/04 ,  H01L23/522 ,  H01L21/00

CPC分类号： H01L23/5227 ,  H01F17/0006 ,  H01F17/0033 ,  H01F27/2804 ,  H01F27/2895 ,  H01F30/16 ,  H01F41/042 ,  H01F41/046 ,  H01F17/06 ,  H01L2924/0002 ,  Y10T29/4902

摘要： High quality factor (Q) spiral and toroidal inductor and transformer are disclosed that are compatible with silicon very large scale integration (VLSI) processing, consume a small IC area, and operate at high frequencies. The spiral inductor has a spiral metal coil deposited in a trench formed in a dielectric layer over a substrate. The metal coil is enclosed in ferromagnetic liner and cap layers, and is connected to an underpass contact through a metal filled via in the dielectric layer. The spiral inductor also includes ferromagnetic cores lines surrounded by the metal spiral coil. A spiral transformer is formed by vertically stacking two spiral inductors, or placing them side-by-side over a ferromagnetic bridge formed below the metal coils and cores lines. The toroidal inductor includes a toroidal metal coil with a core having ferromagnetic strips. The toroidal metal coil is segmented into two coils each having a pair of ports to form a toroidal transformer.

摘要翻译： 公开了与硅非常大规模集成（VLSI）处理兼容的高质量因子（Q）螺旋和环形电感器和变压器，消耗小的IC区域并在高频下操作。 螺旋电感器具有沉积在形成在衬底上的电介质层中的沟槽中的螺旋金属线圈。 金属线圈封装在铁磁衬垫和盖层中，并通过电介质层中的金属填充通孔连接到地下通道接触。 螺旋电感器还包括由金属螺旋线圈包围的铁磁芯线。 通过垂直堆叠两个螺旋电感器或将它们并排放置在形成在金属线圈和芯线下方的铁磁桥上，形成螺旋形变压器。 环形电感器包括具有铁磁条的芯的环形金属线圈。 环形金属线圈被分成两个线圈，每个线圈具有一对端口以形成环形变压器。

公开(公告)号：US06181012B2

公开(公告)日：2001-01-30

申请号：US09067851

申请日：1998-04-27

申请人： Daniel Charles Edelstein ,  James McKell Edwin Harper ,  Chao-Kun Hu ,  Andrew H. Simon ,  Cyprian Emeka Uzoh

发明人： Daniel Charles Edelstein ,  James McKell Edwin Harper ,  Chao-Kun Hu ,  Andrew H. Simon ,  Cyprian Emeka Uzoh

IPC分类号： H01L23532

CPC分类号： H01L21/76843 ,  H01L21/76871 ,  H01L21/76877 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention discloses an interconnection structure for providing electrical communication with an electronic device which includes a body that is formed substantially of copper and a seed layer of either a copper alloy or a metal that does not contain copper sandwiched between the copper conductor body and the electronic device for improving the electromigration resistance, the adhesion property and other surface properties of the interconnection structure. The present invention also discloses, methods for forming an interconnection structure for providing electrical connections to an electronic device by first depositing a seed layer of copper alloy or other metal that does not contain copper on an electronic device, and then forming a copper conductor body on the seed layer intimately bonding to the layer such that electromigration resistance, adhesion and other surface properties of the interconnection structure are improved.

摘要翻译： 本发明公开了一种用于与电子设备进行电连接的互连结构，该电子设备包括基本上由铜形成的主体和不包含铜的铜合金或金属的籽晶层夹在铜导体本体和 用于提高互连结构的电迁移电阻，粘附性等表面性质的电子器件。 本发明还公开了用于形成用于提供与电子设备的电连接的互连结构的方法，该方法是首先在电子设备上沉积不含铜的铜合金或其他金属种子层，然后在铜 种子层紧密地结合到层上，使得互连结构的电迁移阻力，粘附性和其它表面性质得到改善。

公开(公告)号：US6103096A

公开(公告)日：2000-08-15

申请号：US968190

申请日：1997-11-12

申请人： Madhav Datta ,  Daniel Charles Edelstein ,  Cyprian Emeka Uzoh

发明人： Madhav Datta ,  Daniel Charles Edelstein ,  Cyprian Emeka Uzoh

IPC分类号： C25D7/12 ,  C25F7/00 ,  H01L21/00 ,  H01L21/3063 ,  H05K3/07 ,  C25D17/00

CPC分类号： H01L21/6708 ,  C25F7/00 ,  H01L21/3063 ,  H01L21/67075 ,  C25D7/12

摘要： An electrochemical etching apparatus and method increasing the rate at which material is removed from a substrate such as a metallic surface. The apparatus includes an electrolyte delivery system positioned below and centered beneath the center of the substrate (e.g., a wafer) to be etched so that the center axis of the delivery system corresponds to the center of the wafer. The electrolyte delivery system and the wafer are then rotated relative to each other as the electrolyte is discharged from the delivery system and toward the surface of the wafer. A corresponding method for electrochemically etching a surface of the wafer with an electrolyte is also provided.

摘要翻译： 一种电化学蚀刻装置和方法，其提高从诸如金属表面的基底去除材料的速率。 该装置包括位于待蚀刻的衬底（例如，晶片）的中心下方并居中的电解质输送系统，使得输送系统的中心轴对应于晶片的中心。 随着电解质从输送系统排出并朝向晶片的表面，电解质输送系统和晶片然后相对于彼此旋转。 还提供了用电解质电蚀刻晶片表面的相应方法。