公开(公告)号：US06270646B1

公开(公告)日：2001-08-07

申请号：US09473909

申请日：1999-12-28

申请人： Erick Gregory Walton ,  Dean S. Chung ,  Lara Sandra Collins ,  William E. Corbin, Jr. ,  Hariklia Deligianni ,  Daniel Charles Edelstein ,  James E. Fluegel ,  Josef Warren Korejwa ,  Peter S. Locke ,  Cyprian Emeka Uzoh

发明人： Erick Gregory Walton ,  Dean S. Chung ,  Lara Sandra Collins ,  William E. Corbin, Jr. ,  Hariklia Deligianni ,  Daniel Charles Edelstein ,  James E. Fluegel ,  Josef Warren Korejwa ,  Peter S. Locke ,  Cyprian Emeka Uzoh

IPC分类号： C25D522

CPC分类号： C25D17/14 ,  C25D5/06

摘要： A metal plating apparatus is described which includes a compressible member having a conductive surface covering substantially all of the surface of the substrate to be plated. The plating current is thereby transmitted over a wide area of the substrate, rather than a few localized contact points. The compressible member is porous so as to absorb the plating solution and transmit the plating solution to the substrate. The wafer and compressible member may rotate with respect to each other. The compressible member may be at cathode potential or may be a passive circuit element.

摘要翻译： 描述了一种金属电镀装置，其包括具有覆盖待镀基板的基本上所有表面的导电表面的可压缩构件。 因此，电镀电流在衬底的广泛区域上传输，而不是几个局部接触点。 可压缩构件是多孔的，以便吸收电镀液并将电镀液传输到基底。 晶片和可压缩构件可以相对于彼此旋转。 可压缩构件可以处于阴极电位，或者可以是无源电路元件。

公开(公告)号：US07678258B2

公开(公告)日：2010-03-16

申请号：US10615794

申请日：2003-07-10

申请人： Panayotis Andricacos ,  Dean S. Chung ,  Hariklia Deligianni ,  James E. Fluegel ,  Keith T. Kwietniak ,  Peter S. Locke ,  Darryl D. Restaino ,  Soon-Cheon Seo ,  Philippe M. Vereecken ,  Erick G. Walton

发明人： Panayotis Andricacos ,  Dean S. Chung ,  Hariklia Deligianni ,  James E. Fluegel ,  Keith T. Kwietniak ,  Peter S. Locke ,  Darryl D. Restaino ,  Soon-Cheon Seo ,  Philippe M. Vereecken ,  Erick G. Walton

IPC分类号： C25D5/00

CPC分类号： C23C18/1617 ,  C23C18/1683 ,  C25D21/12 ,  C25D21/18

摘要： An improved method of stabilizing wet chemical baths is disclosed. Typically such baths are used in processes for treating workpieces, for example, plating processes for plating metal onto substrates. In particular, the present invention relates to copper plating baths. More particularly, the present invention relates to the stability of copper plating baths. More particularly, the present invention relates to prevention of void formation by monitoring the accumulation of deleterious by-products in copper plating baths.

摘要翻译： 公开了一种稳定湿化学浴的改进方法。 通常，这种浴用于处理工件的工艺中，例如用于将金属电镀到基底上的电镀工艺。 特别地，本发明涉及镀铜浴。 更具体地说，本发明涉及镀铜浴的稳定性。 更具体地，本发明涉及通过监测铜电镀浴中有害副产物的积累来防止空隙形成。

公开(公告)号：US07227265B2

公开(公告)日：2007-06-05

申请号：US10810719

申请日：2004-03-29

申请人： Panayotis C. Andricacos ,  Steven H. Boettcher ,  Dean S. Chung ,  Hariklia Deligianni ,  James E. Fluegel ,  Wilma Jean Horkans ,  Keith T. Kwietniak ,  Peter S. Locke ,  Christopher C. Parks ,  Soon-Cheon Seo ,  Andrew H. Simon ,  Erick G. Walton

发明人： Panayotis C. Andricacos ,  Steven H. Boettcher ,  Dean S. Chung ,  Hariklia Deligianni ,  James E. Fluegel ,  Wilma Jean Horkans ,  Keith T. Kwietniak ,  Peter S. Locke ,  Christopher C. Parks ,  Soon-Cheon Seo ,  Andrew H. Simon ,  Erick G. Walton

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/2885 ,  C25D3/38 ,  C25D5/024 ,  C25D5/18 ,  C25D7/123 ,  H01L21/76877

摘要： Interconnect structures with copper conductors being at least substantially free of internal seams or voids are obtained employing an electroplating copper bath containing dissolved cupric salt wherein the concentration of the salt is at least about 0.4 molar and up to about 0.5 molar concentration of an acid. Also provided are copper damascene structures having an aspect ratio of greater than about 3 and a width of less than about 0.275 μm and via openings filled with electroplated copper than is substantially free of internal seams or voids.

摘要翻译： 使用包含溶解的铜盐的电镀铜浴获得至少基本上不含内部接缝或空隙的铜导体的互连结构，其中盐的浓度为酸的至少约0.4摩尔浓度至高达约0.5摩尔浓度。 还提供了具有大于约3的宽高比和小于约0.275μm的宽度的铜镶嵌结构以及填充有电镀铜的通孔，基本上不含内部接缝或空隙。

公开(公告)号：US06471845B1

公开(公告)日：2002-10-29

申请号：US09461849

申请日：1999-12-15

申请人： John O. Dukovic ,  William E. Corbin, Jr. ,  Erick G. Walton ,  Peter S. Locke ,  Panayotis C. Andricacos ,  James E. Fluegel ,  Evan Patton ,  Jonathan Reid

发明人： John O. Dukovic ,  William E. Corbin, Jr. ,  Erick G. Walton ,  Peter S. Locke ,  Panayotis C. Andricacos ,  James E. Fluegel ,  Evan Patton ,  Jonathan Reid

IPC分类号： C25D2112

CPC分类号： C25D21/12 ,  Y10T137/2509

摘要： A method for controlling the composition of a chemical bath in which predictive dosing is used to account for changes in the composition of the bath in which the operating characteristics of the process are partitioned into a plurality of operating modes and the consumption or generation of materials related to the process are determined empirically and additions of material are made as appropriate.

摘要翻译： 用于控制化学浴的组成的方法，其中使用预测剂量来解释浴的组成的变化，其中过程的操作特性被划分为多种操作模式以及相关材料的消耗或产生 根据经验确定该过程，并酌情添加材料。

公开(公告)号：US20100051501A1

公开(公告)日：2010-03-04

申请号：US12201553

申请日：2008-08-29

申请人： William E. Corbin, JR. ,  Alison K. Easton ,  James E. Fluegel ,  Christopher W. Long ,  James H. Peterman ,  Laura Mauer

发明人： William E. Corbin, JR. ,  Alison K. Easton ,  James E. Fluegel ,  Christopher W. Long ,  James H. Peterman ,  Laura Mauer

IPC分类号： B65D85/00

CPC分类号： H01L21/67393

摘要： A wafer carrying structure is provided that allows more efficient operation of the opening and closing mechanisms. More specifically, the wafer carrier includes pressure relief structures that provide appropriate pressure equalization during the opening and closing operations of the wafer carrier. This allows doors on the wafer to be more easily opened and closed while also providing significant environmental isolation for the wafers during transport operations. Relief structures specifically designed to remain closed except for those brief periods of time where pressure relief is necessary to equalize pressure during opening and closing of the carrier.

摘要翻译： 提供了允许更有效地操作打开和关闭机构的晶片承载结构。 更具体地，晶片载体包括在晶片载体的打开和关闭操作期间提供适当的压力平衡的压力释放结构。 这允许晶片上的门更容易地打开和关闭，同时还在运输操作期间为晶片提供显着的环境隔离。 特别设计为保持关闭的救济结构，除了需要压力释放以在打开和关闭载体的过程中平衡压力的短暂时间内。

公开(公告)号：US07407605B2

公开(公告)日：2008-08-05

申请号：US11751788

申请日：2007-05-22

申请人： Darryl D. Restaino ,  Donald F. Canaperi ,  Judith M. Rubino ,  Sean P. E. Smith ,  Richard O. Henry ,  James E. Fluegel ,  Mahadevaiyer Krishnan

发明人： Darryl D. Restaino ,  Donald F. Canaperi ,  Judith M. Rubino ,  Sean P. E. Smith ,  Richard O. Henry ,  James E. Fluegel ,  Mahadevaiyer Krishnan

IPC分类号： H01B1/00

CPC分类号： H01L21/288 ,  C23C18/1241 ,  C23C18/1607 ,  C23C18/1608 ,  C23C18/1844 ,  C23C18/50 ,  H01L21/76849 ,  H01L21/76874 ,  H05K3/244 ,  H05K2203/0716 ,  H05K2203/072

摘要： An aqueous seeding solution of palladium acetate, acetic acid and chloride.

摘要翻译： 乙酸钯，乙酸和氯化钠的水溶液接种溶液。

公开(公告)号：US06395164B1

公开(公告)日：2002-05-28

申请号：US09414224

申请日：1999-10-07

申请人： Panayotis Andricacos ,  James E. Fluegel ,  John G. Gaudiello ,  Ronald D. Goldblatt ,  Sandra G. Malhotra ,  Milan Paunovic

发明人： Panayotis Andricacos ,  James E. Fluegel ,  John G. Gaudiello ,  Ronald D. Goldblatt ,  Sandra G. Malhotra ,  Milan Paunovic

IPC分类号： C25D712

CPC分类号： H01L21/76868 ,  C23C18/161 ,  C23C18/1653 ,  C25D7/123 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76873

摘要： An electroless touch-up process for repairing copper metallization deposited in dual damascene structures with high aspect ratios. An initial copper strike layer is produced by directional deposition techniques such that discontinuous sidewall coverage occurs. An evolutionary electroless touch-up process then proceeds to conformally grow the copper layer on all surfaces. The result of the evolutionary process is to produce a continuous copper strike layer that can be used with conventional electroplating techniques.

摘要翻译： 用于修复沉积在具有高纵横比的双镶嵌结构中的铜金属化的无电镀修补方法。 通过定向沉积技术产生初始铜击穿层，从而发生不连续的侧壁覆盖。 然后进行进化的无电触摸处理以在所有表​​面上保形地生长铜层。 进化过程的结果是产生可与常规电镀技术一起使用的连续铜击穿层。

公开(公告)号：US07901490B2

公开(公告)日：2011-03-08

申请号：US11972118

申请日：2008-01-10

申请人： David J. Clark ,  Alison K. Easton ,  James E. Fluegel ,  James H. Peterman

发明人： David J. Clark ,  Alison K. Easton ,  James E. Fluegel ,  James H. Peterman

IPC分类号： C23C16/00

CPC分类号： H01L21/67379 ,  H01L21/67393 ,  Y10S206/832

摘要： A system and method of reducing the introduction of foreign material to wafers. A system includes an enclosure structured and arranged to carry wafers used in semiconductor device manufacturing, and an attractive material arranged as at least a portion of an interior surface of the enclosure.

摘要翻译： 减少异物引入晶片的系统和方法。 系统包括构造和布置成承载用于半导体器件制造的晶片的外壳，以及布置为外壳的内表面的至少一部分的有吸引力的材料。

公开(公告)号：US06241868B1

公开(公告)日：2001-06-05

申请号：US09541018

申请日：2000-03-31

申请人： Glen N. Biggs ,  Donald M. Brewer ,  James E. Fluegel ,  Suryanarayana Kaja ,  Ashwani K. Malhotra ,  Phillip W. Palmatier

发明人： Glen N. Biggs ,  Donald M. Brewer ,  James E. Fluegel ,  Suryanarayana Kaja ,  Ashwani K. Malhotra ,  Phillip W. Palmatier

IPC分类号： C25D502

CPC分类号： C25D7/123 ,  C25D17/004 ,  C25D17/005 ,  H05K3/242 ,  H05K2203/1147 ,  H05K2203/1572 ,  H05K2203/1581

摘要： A method for electroplating a film onto a substrate. Electrical power is supplied to the plating surface through electrical contact made to contact pads on the underside of the substrate. Contact to the contact pads is made within a liquid-tight region. The contact pads are connected to the plating surface through the substrate. Because the contact scheme is provided within a liquid-tight region on the underside of the substrate, the contacts do not erode or become plated, nor do they consume an area of the plating surface.

摘要翻译： 一种将膜电镀到基底上的方法。 通过与衬底底面上的接触焊盘的电接触将电力提供给电镀表面。 接触垫的接触在液密区域内进行。 接触垫通过基板连接到电镀表面。 由于接触方案设置在基板下侧的液密区域内，触点不会腐蚀或变成电镀，也不消耗电镀表面的区域。

公开(公告)号：US20090180848A1

公开(公告)日：2009-07-16

申请号：US11972118

申请日：2008-01-10

申请人： David J. Clark ,  Alison K. Easton ,  James E. Fluegel ,  James H. Peterman

发明人： David J. Clark ,  Alison K. Easton ,  James E. Fluegel ,  James H. Peterman

IPC分类号： H01L21/673

CPC分类号： H01L21/67379 ,  H01L21/67393 ,  Y10S206/832

摘要： A system and method of reducing the introduction of foreign material to wafers. A system includes an enclosure structured and arranged to carry wafers used in semiconductor device manufacturing, and an attractive material arranged as at least a portion of an interior surface of the enclosure.

摘要翻译： 减少异物引入晶片的系统和方法。 系统包括构造和布置成承载用于半导体器件制造的晶片的外壳，以及布置为外壳的内表面的至少一部分的有吸引力的材料。