公开(公告)号：US5168069A

公开(公告)日：1992-12-01

申请号：US312133

申请日：1989-02-17

申请人： Frank W. Smith ,  Mark A. Hollis ,  Arthur R. Calawa ,  Vicky Diadiuk ,  Han Q. Le

发明人： Frank W. Smith ,  Mark A. Hollis ,  Arthur R. Calawa ,  Vicky Diadiuk ,  Han Q. Le

IPC分类号： H01L21/20 ,  H01L21/285 ,  H01L21/335 ,  H01L21/337 ,  H01L21/338 ,  H01L21/8252 ,  H01L29/10 ,  H01L29/51 ,  H01L29/812 ,  H01L31/09 ,  H01L31/18 ,  H01S5/02 ,  H01S5/026 ,  H01S5/223

CPC分类号： H01L29/517 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02631 ,  H01L21/02634 ,  H01L21/28587 ,  H01L21/8252 ,  H01L29/1075 ,  H01L29/66462 ,  H01L29/66863 ,  H01L29/66924 ,  H01L29/8128 ,  H01L31/09 ,  H01L31/184 ,  H01S5/0208 ,  H01S5/021 ,  H01S5/026 ,  H01S5/223 ,  Y02E10/544 ,  Y02P70/521 ,  Y10S148/003 ,  Y10S148/025 ,  Y10S148/041 ,  Y10S148/056 ,  Y10S148/154 ,  Y10S438/971

摘要： An ultra-high-speed photoconductive device is described which comprises a homoepitaxial semi-insulating III-V layer, or body, upon which ohmic/conductive contacts, or strips, separated by a small gap, are formed. The semi-insulating body, or layer, is produced by low temperature growth of III-V compounds by MBE. In a GaAs embodiment, the layer is grown under arsenic stable growth conditions, at a substrate temperature preferably in the range of 150.degree. to about 300.degree. C.

摘要翻译： 描述了一种超高速光电导器件，其包括同质外延半绝缘III-V层或体，在其上形成由小间隙分开的欧姆/导电触点或条带。 半绝缘体或层是通过MBE的III-V化合物的低温生长而产生的。 在GaAs实施方案中，该层在砷稳定生长条件下生长，在衬底温度下优选在150℃至约300℃的范围内。

公开(公告)号：US5332918A

公开(公告)日：1994-07-26

申请号：US938385

申请日：1992-08-31

申请人： Frank W. Smith ,  Mark A. Hollis ,  Arthur R. Calawa ,  Vicky Diadiuk ,  Han Q. Le

发明人： Frank W. Smith ,  Mark A. Hollis ,  Arthur R. Calawa ,  Vicky Diadiuk ,  Han Q. Le

IPC分类号： H01L21/20 ,  H01L21/285 ,  H01L21/335 ,  H01L21/337 ,  H01L21/338 ,  H01L21/8252 ,  H01L29/10 ,  H01L29/51 ,  H01L29/812 ,  H01L31/09 ,  H01L31/18 ,  H01S5/02 ,  H01S5/026 ,  H01S5/223 ,  H01L27/14 ,  H01L23/485 ,  H01L31/00

CPC分类号： H01L29/517 ,  H01L21/28587 ,  H01L21/8252 ,  H01L29/1075 ,  H01L29/66462 ,  H01L29/66863 ,  H01L29/66924 ,  H01L29/8128 ,  H01L31/09 ,  H01L31/184 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02631 ,  H01S5/0208 ,  H01S5/021 ,  H01S5/026 ,  H01S5/223 ,  Y02E10/544

摘要： An ultra-high-speed photoconductive device is described which comprises a homoepitaxial semi-insulating III-V layer, or body, upon which ohmic/conductive contacts, or strips, separated by a small gap, are formed. The semi-insulating body, or layer, is produced by low temperature growth of III-V compounds by MBE. In a GaAs embodiment, the layer is grown under arsenic stable growth conditions, at a substrate temperature preferably in the range of 150.degree. to about 300.degree. C.

摘要翻译： 描述了一种超高速光电导器件，其包括同质外延半绝缘III-V层或体，在其上形成由小间隙分开的欧姆/导电触点或条带。 半绝缘体或层是通过MBE的III-V化合物的低温生长而产生的。 在GaAs实施方案中，该层在砷稳定生长条件下生长，在衬底温度下优选在150℃至约300℃的范围内。

公开(公告)号：US4952527A

公开(公告)日：1990-08-28

申请号：US157806

申请日：1988-02-19

申请人： Arthur R. Calawa ,  Frank W. Smith ,  Michael J. Manfra ,  Chang-Lee Chen

发明人： Arthur R. Calawa ,  Frank W. Smith ,  Michael J. Manfra ,  Chang-Lee Chen

IPC分类号： H01L21/20 ,  H01L21/285 ,  H01L21/335 ,  H01L21/337 ,  H01L21/338 ,  H01L21/8252 ,  H01L29/10 ,  H01L29/51 ,  H01L29/812 ,  H01L31/09 ,  H01L31/18 ,  H01S5/02 ,  H01S5/026 ,  H01S5/223

CPC分类号： H01L29/517 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02631 ,  H01L21/02634 ,  H01L21/28587 ,  H01L21/8252 ,  H01L29/1075 ,  H01L29/66462 ,  H01L29/66863 ,  H01L29/66924 ,  H01L29/8128 ,  H01L31/09 ,  H01L31/184 ,  H01S5/0208 ,  H01S5/021 ,  H01S5/026 ,  H01S5/223 ,  Y02E10/544 ,  Y02P70/521 ,  Y10S148/003 ,  Y10S148/025 ,  Y10S148/041 ,  Y10S148/056 ,  Y10S148/154 ,  Y10S438/971

摘要： A new III-IV buffer material is described which is produced by low temperature growth of III-V compounds by MBE that has unique and desirable properties, particularly for closely spaced, submicron gate length active III-V semiconductor devices, such as HEMT's, MESFET's and MISFET's. In the case of the III-V material, GaAs, the buffer is grown under arsenic stable growth conditions, at a growth rate of 1 micron/hour, and at a substrate temperature preferably in the range of 150 to about 300.degree. C. The new material is crystalline, highly resistive, optically inactive, and can be overgrown with high quality III-V active layers.

摘要翻译： 描述了新的III-IV缓冲材料，其通过MBE的III-V化合物的低温生长产生，其具有独特和期望的性质，特别是对于紧密间隔的亚微米栅极长度有源III-V半导体器件，例如HEMT，MESFET 和MISFET的。 在III-V材料GaAs的情况下，缓冲液在砷稳定生长条件下以1微米/小时的生长速率和优选在150至约300℃的衬底温度下生长。 新材料是结晶的，高度电阻的，光学上无活性的，并且可以用高质量的III-V有源层过度生长。

公开(公告)号：US5411914A

公开(公告)日：1995-05-02

申请号：US884651

申请日：1992-05-15

申请人： Chang-Lee Chen ,  Leonard J. Mahoney ,  Michael J. Manfra ,  Frank W. Smith ,  Arthur R. Calawa

发明人： Chang-Lee Chen ,  Leonard J. Mahoney ,  Michael J. Manfra ,  Frank W. Smith ,  Arthur R. Calawa

IPC分类号： H01L21/20 ,  H01L21/285 ,  H01L21/335 ,  H01L21/337 ,  H01L21/338 ,  H01L21/8252 ,  H01L29/10 ,  H01L29/51 ,  H01L29/812 ,  H01L31/09 ,  H01L31/18 ,  H01S5/02 ,  H01S5/026 ,  H01S5/223 ,  H01L21/203

CPC分类号： H01L29/66863 ,  H01L21/28587 ,  H01L21/8252 ,  H01L29/1075 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/66924 ,  H01L29/8128 ,  H01L31/09 ,  H01L31/184 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02631 ,  H01L2924/0002 ,  H01S5/0208 ,  H01S5/021 ,  H01S5/026 ,  H01S5/223 ,  Y02E10/544 ,  Y02P70/521 ,  Y10S438/933 ,  Y10S438/971

摘要： A new III-V buffer or passivation material is described which is produced by low temperature growth (LTG) of III-V compounds. The material has unique and desirable properties, particularly for closely spaced, submicron gate length active III-V semiconductor FET devices, such as HEMT's, MESFET's and MISFET's. The LTG material is grown under ambient conditions which incorporate an excess of the more volatile of the III-V species into the grown material. The new material is crystalline, highly resistive, relatively insensitive to light, and can be overgrown with high quality III-V active layers or used as a passivation material to insulate and protect active device structures.

摘要翻译： 描述了通过III-V化合物的低温生长（LTG）产生的新的III-V缓冲液或钝化材料。 该材料具有独特且理想的特性，特别是对于紧密间隔的亚微米栅极长度有源III-V半导体FET器件，如HEMT，MESFET和MISFET。 LTG材料在环境条件下生长，其中将过量的III-V族更易挥发的物质掺入生长的材料中。 新材料是结晶的，高度电阻的，对光相对不敏感，并且可以长满高质量的III-V有源层或用作钝化材料以绝缘并保护有源器件结构。

公开(公告)号：US20090114542A1

公开(公告)日：2009-05-07

申请号：US11935544

申请日：2007-11-06

申请人： Sriranga S. Boyapati ,  Frank W. Smith ,  Kin-Sang Lam

发明人： Sriranga S. Boyapati ,  Frank W. Smith ,  Kin-Sang Lam

IPC分类号： C25D5/00

CPC分类号： C25D5/02 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/76877

摘要： A process of forming an electronic device can include placing a seed layer into an electroplating solution within an electroplating tool. The electroplating tool can include a first electrode and a second electrode, wherein the first electrode is electrically connected to the seed layer. The process can also include depositing a first portion of a conductive layer using a first signal of a first type (e.g., direct current) between the first electrode and a second electrode, and depositing a second portion of the conductive layer over the first portion of the conductive layer, using a second signal of a second type (e.g., alternating current) between the first electrode and the second electrode of the electroplating tool.

摘要翻译： 形成电子器件的过程可以包括将种子层放置在电镀工具内的电镀溶液中。 电镀工具可以包括第一电极和第二电极，其中第一电极电连接到种子层。 该方法还可以包括使用第一类型的第一信号（例如，直流）在第一电极和第二电极之间沉积导电层的第一部分，以及将导电层的第二部分沉积在第一部分的第一部分上 所述导电层使用所述电镀工具的所述第一电极和所述第二电极之间的第二类型的第二信号（例如交流电）。

公开(公告)号：US5663639A

公开(公告)日：1997-09-02

申请号：US183057

申请日：1994-01-18

申请人： Elliott R. Brown ,  Frank W. Smith

发明人： Elliott R. Brown ,  Frank W. Smith

IPC分类号： H01L31/0232 ,  H01L31/108 ,  H01S5/062 ,  G01R19/00 ,  H01J40/14 ,  H04B10/06

CPC分类号： H01L31/0232 ,  H01L31/1085 ,  H01S5/0623

摘要： An apparatus and method for optical heterodyne conversion and a radiation source and integrated diagnostics using the apparatus and method are disclosed. The radiation source can operate in a high-power narrow-band mode in which a constant-frequency output is provided or in a low-power broadband mode in which the frequency is tunable to allow the radiation source to act as a sweep oscillator. The apparatus or photomixer includes two sets of interdigitated conductive electrodes formed on top of a crystal lattice formed of column III-V compounds, particularly InAlGaAs compounds. Additional column V atoms are interspersed within the lattice structure to form defect energy states in the bandgap of the host material. The region of the material between the interdigitated electrodes is illuminated by optical radiation containing two different frequencies. Photon absorption in the material causes a current at the difference frequency to be generated and coupled to the interdigitated electrodes. The current is then coupled to a planar transmission line or antenna structure to generate coherent, continuous-wave, unimodal radiation in the microwave, millimeter-wave, or submillimeter-wave regions.

摘要翻译： 公开了一种用于光学外差转换的装置和方法以及使用该装置和方法的辐射源和综合诊断。 辐射源可以在其中提供恒定频率输出的高功率窄带模式中工作，或者在频率可调的低功率宽带模式中工作，以允许辐射源充当扫频振荡器。 该装置或光混混器包括形成在由III-V族化合物，特别是InAlGaAs化合物形成的晶格之上的两组交叉指导电极。 额外的列V原子散布在晶格结构内，以在主体材料的带隙中形成缺陷能态。 交叉电极之间的材料区域被包含两个不同频率的光辐射照射。 材料中的光子吸收导致产生差频的电流并耦合到叉指电极。 然后将电流耦合到平面传输线或天线结构，以在微波，毫米波或亚毫米波区域中产生相干，连续波，单峰辐射。

公开(公告)号：US5387821A

公开(公告)日：1995-02-07

申请号：US974965

申请日：1992-11-12

申请人： Paul B. Steciuk ,  Frank W. Smith ,  Carol A. Lupo

发明人： Paul B. Steciuk ,  Frank W. Smith ,  Carol A. Lupo

IPC分类号： H02J3/01 ,  H02J3/18 ,  H02J3/00

CPC分类号： H02J3/01 ,  H02J3/1821 ,  Y02E40/30 ,  Y02E40/40 ,  Y02P80/11

摘要： An electrical power distribution system of an industrial plant or a commercial building and having a capacity for delivering at least 500 KVA, includes a voltage step-down transformer connected between an AC source of electrical energy and a pair of power distribution line conductors across which there is connected a pulsed inductive load, such as a motor with a thyrister speed controller. The power factor of the system is corrected by a power factor correction capacitor connected directly across the system power distribution line conductors. Pulsed inductive loads tend to excite large harmonic currents in such systems having both a transformer and a power factor correction capacitor directly across the distribution line conductors. A filter, made up of a filter capacitor and a filter inductor tuned exactly to one harmonic, are connected in a series circuit branch that is connected directly across the system power distribution line conductors. The name plate KVAR rating of and capacitance of the filter capacitor is chosen to be much smaller than corresponding KVAR rating and capacitance of the power factor correction capacitor in order to make the function of the power factor correction capacitor and the function of the filter essentially independent of each other. This independence is attributable to the substantially no current flow of frequency of the AC power source through the filter capacitor and substantially no current at the harmonic frequency to which the filter is tuned flows through the power factor capacitor.

摘要翻译： 工业设备或商业建筑物的电力分配系统具有至少500KVA的输送能力，包括连接在AC电源和一对配电线导体之间的电压降压变压器， 连接有脉冲感应负载，例如带有可控硅速度控制器的电机。 通过直接连接在系统配电线路导体上的功率因数校正电容来校正系统的功率因数。 脉冲感应负载倾向于在具有变压器和功率因数校正电容器的系统中直接跨越配电线路导体激发大的谐波电流。 由滤波电容器和精确调谐到一个谐波的滤波电感器组成的滤波器连接在直接连接在系统配电线路导线上的串联电路支路中。 滤波电容器的铭牌KVAR额定值和电容选择为远小于功率因数校正电容器的相应KVAR额定值和电容，以使功率因数校正电容器的功能和滤波器的功能基本独立 的对方 这种独立性归因于通过滤波电容器的AC电源的电流基本上没有电流流动，并且滤波器被调谐到的谐波频率基本上没有电流流过功率因数电容器。