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    Inductively coupled HDP-CVD reactor
    1.
    发明授权
    Inductively coupled HDP-CVD reactor 失效
    电感耦合HDP-CVD反应器

    公开(公告)号：US06182602B2

    公开(公告)日：2001-02-06

    申请号：US08865018

    申请日：1997-05-29

    申请人： Fred C. Redeker ,  Romuald Nowak ,  Tetsuya Ishikawa ,  Troy Detrick ,  Jay Dee Pinson, II

    发明人： Fred C. Redeker ,  Romuald Nowak ,  Tetsuya Ishikawa ,  Troy Detrick ,  Jay Dee Pinson, II

    IPC分类号： C23C1600

    CPC分类号： H01J37/32449 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32862

    摘要： The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.

    摘要翻译： 本发明提供一种HDP-CVD工具，其使用能够在晶片上具有优异的间隙填充和覆盖膜沉积的掺杂和未掺杂的二氧化硅的同时沉积和溅射。 本发明的工具包括：双RF区电感耦合等离子体源; 双区气体分配系统; 工具内的温度控制表面; 对称成形的涡轮分子抽水室体; 双冷却区静电吸盘; 全陶瓷/铝合金室; 和远程等离子体室清洁系统。

    High density plasma CVD reactor with combined inductive and capacitive coupling
    3.
    发明授权
    High density plasma CVD reactor with combined inductive and capacitive coupling 失效
    具有组合电感和电容耦合的高密度等离子体CVD反应堆

    公开(公告)号：US06220201B1

    公开(公告)日：2001-04-24

    申请号：US09111625

    申请日：1998-07-07

    申请人： Romuald Nowak ,  Kevin Fairbairn ,  Fred C. Redeker

    发明人： Romuald Nowak ,  Kevin Fairbairn ,  Fred C. Redeker

    IPC分类号： C23C1600

    CPC分类号： H01J37/32091 ,  H01J37/321 ,  H01J37/3244

    摘要： The invention is embodied in a plasma reactor having a vacuum chamber with a cylindrical side portion and a ceiling at a certain height above the top of the cylindrical side portion, a wafer-holding pedestal near the bottom of the vacuum chamber, gas injection ports near the cylindrical side portion and a vacuum pump, the reactor including a generally planar disk-shaped conductive ceiling electrode adjacent the ceiling, a helical coil antenna having a bottom winding near the top of the cylindrical side portion and a top winding generally corresponding to the second diameter near the planar disk-shaped conductive ceiling electrode, the helical coil antenna substantially spanning the height between the top of the cylindrical side portion and the ceiling, and a switch for individually connecting each one of the coil antenna, the ceiling electrode and the wafer pedestal to one of (a) a respective RF power source or (b) ground or (c) a floating potential (i.e., unconnected to any potential source). The invention is also embodied in a plasma reactor having a vacuum chamber, a wafer-holding pedestal near the bottom of the vacuum chamber, gas injection ports and a vacuum pump, the reactor including a conductive ceiling electrode at the top of the chamber, a coil antenna having a top generally coplanar with the ceiling electrode and a base generally coinciding with a circumference of the vacuum chamber, and a switch for individually connecting each one of the coil antenna, the ceiling electrode and the wafer pedestal to one of (a) a respective RF power source, or (b) ground or (c) a floating potential. In one embodiment, the reactor is a chemical vapor deposition plasma reactor.

    摘要翻译： 本发明体现在具有真空室的等离子体反应器中，该真空室具有圆柱形侧部和位于圆柱形侧部顶部上方一定高度的顶部，靠近真空室底部的晶片保持基座，靠近气体注入口的气体注入口 圆柱形侧部和真空泵，反应器包括与天花板相邻的大致平面的盘形导电顶板电极，具有靠近圆柱形侧部顶部的底部绕组的螺旋线圈天线和通常对应于第二 直径靠近平面盘状导电天花板电极，螺旋线圈天线基本跨越圆柱形侧部的顶部与天花板之间的高度，以及用于单独连接线圈天线，天花板电极和晶片中的每一个的开关 （a）相应的RF电源或（b）接地或（c）浮动电位之一（即，未连接到任何电位 资源）。 本发明还体现在具有真空室，靠近真空室底部的晶片保持基座，气体注入端口和真空泵的等离子体反应器中，该反应器包括位于室顶部的导电天花板电极， 线圈天线​​具有与天花板电极大致共面的顶部和大致与真空室的圆周重合的基座，以及用于将线圈天线，天花板电极和晶片基座中的每一个单独连接到（a） 相应的RF电源，或（b）接地或（c）浮动电位。 在一个实施方案中，反应器是化学气相沉积等离子体反应器。

    High density plasma CVD reactor with combined inductive and capacitive coupling
    4.
    发明授权
    High density plasma CVD reactor with combined inductive and capacitive coupling 失效
    具有组合电感和电容耦合的高密度等离子体CVD反应堆

    公开(公告)号：US5865896A

    公开(公告)日：1999-02-02

    申请号：US766053

    申请日：1996-12-16

    申请人： Romuald Nowak ,  Kevin Fairbairn ,  Fred C. Redeker

    发明人： Romuald Nowak ,  Kevin Fairbairn ,  Fred C. Redeker

    IPC分类号： H01J37/32 ,  C23C16/00 ,  C23C14/00 ,  C23F1/02

    CPC分类号： H01J37/32091 ,  H01J37/321 ,  H01J37/3244

    摘要： The invention is embodied in a plasma reactor having a vacuum chamber with a cylindrical side portion and a ceiling at a certain height above the top of the cylindrical side portion, a wafer-holding pedestal near the bottom of the vacuum chamber, gas injection ports near the cylindrical side portion and a vacuum pump, the reactor including a generally planar disk-shaped conductive ceiling electrode adjacent the ceiling, a helical coil antenna having a bottom winding near the top of the cylindrical side portion and a top winding generally corresponding to the second diameter near the planar disk-shaped conductive ceiling electrode, the helical coil antenna substantially spanning the height between the top of the cylindrical side portion and the ceiling, and a switch for individually connecting each one of the coil antenna, the ceiling electrode and the wafer pedestal to one of (a) a respective RF power source or (b) ground or (c) a floating potential (i.e., unconnected to any potential source). The invention is also embodied in a plasma reactor having a vacuum chamber, a wafer-holding pedestal near the bottom of the vacuum chamber, gas injection ports and a vacuum pump, the reactor including a conductive ceiling electrode at the top of the chamber, a coil antenna having a top generally coplanar with the ceiling electrode and a base generally coinciding with a circumference of the vacuum chamber, and a switch for individually connecting each one of the coil antenna, the ceiling electrode and the wafer pedestal to one of (a) a respective RF power source, or (b) ground or (c) a floating potential. In one embodiment, the reactor is a chemical vapor depostion plasma reactor.

    摘要翻译： 本发明体现在具有真空室的等离子体反应器中，该真空室具有圆柱形侧部和位于圆柱形侧部顶部上方一定高度的顶部，靠近真空室底部的晶片保持基座，靠近气体注入口的气体注入口 圆柱形侧部和真空泵，反应器包括与天花板相邻的大致平面的盘状导电顶板电极，具有靠近圆柱形侧部顶部的底部绕组的螺旋线圈天线和通常对应于第二 直径靠近平面盘状导电天花板电极，螺旋线圈天线基本跨越圆柱形侧部的顶部与天花板之间的高度，以及用于单独连接线圈天线，天花板电极和晶片中的每一个的开关 （a）相应的RF电源或（b）接地或（c）浮动电位之一（即，未连接到任何电位 资源）。 本发明还体现在具有真空室，靠近真空室底部的晶片保持基座，气体注入端口和真空泵的等离子体反应器中，该反应器包括位于室顶部的导电天花板电极， 线圈天线​​具有与天花板电极大致共面的顶部和大致与真空室的圆周重合的基座，以及用于将线圈天线，天花板电极和晶片基座中的每一个单独连接到（a） 相应的RF电源，或（b）接地或（c）浮动电位。 在一个实施方案中，反应器是化学气相沉积等离子体反应器。

    Method of operating high density plasma CVD reactor with combined inductive and capacitive coupling
    5.
    发明授权
    Method of operating high density plasma CVD reactor with combined inductive and capacitive coupling 失效
    操作具有组合电感和电容耦合的高密度等离子体CVD反应堆的方法

    公开(公告)号：US06465051B1

    公开(公告)日：2002-10-15

    申请号：US08751899

    申请日：1996-11-18

    申请人： Turgut Sahin ,  Fred C. Redeker ,  Romuald Nowak ,  Shijian Li ,  Timothy Dyer ,  Derek R. Witty

    发明人： Turgut Sahin ,  Fred C. Redeker ,  Romuald Nowak ,  Shijian Li ,  Timothy Dyer ,  Derek R. Witty

    IPC分类号： H05H146

    CPC分类号： H01J37/32862 ,  C23C16/4405 ,  H01J37/32082

    摘要： The invention is embodied in a method of cleaning a plasma reactor by creating a vacuum in the chamber while introducing an etchant gas into the chamber through the gas injection ports, and applying RF energy to a ceiling electrode in the chamber while not necessarily applying RF energy to the coil antenna, so as to strike a predominantly capacitively coupled plasma in the vacuum chamber. In another embodiment the method includes, whenever the reactor is to be operated in an inductive coupling mode, applying RF power to the reactors coil antenna while grounding the ceiling electrode, and whenever the reactor is to be operated in a capacitive coupling mode, applying RF power to the ceiling electrode, and whenever the reactor is to be cleaned, cleaning the reactor by applying RF power to the ceiling electrode and to the coil antenna while introducing an etchant gas into the vacuum chamber. In yet another embodiment the method includes performing chemical vapor deposition on a wafer by introducing a deposition precursor gas into the chamber while maintaining an inductively coupled plasma therein by applying RF power to the coil antenna while grounding the ceiling electrode, and cleaning the reactor by introducing a precursor cleaning gas into the chamber while maintaining a capacitively coupled plasma in the chamber by applying RF power to the ceiling electrode.

    摘要翻译： 本发明体现在一种通过在室中产生真空来清洁等离子体反应器的方法，同时通过气体注入口将蚀刻剂气体引入室中，并且将RF能量施加到室中的顶板电极，而不一定施加RF能量 到线圈天线，以便在真空室中击穿主要电容耦合的等离子体。 在另一个实施例中，该方法包括：每当反应器以电感耦合模式工作时，在将天线电极接地的同时向反应器线圈天线施加RF功率，并且每当反应器以电容耦合模式工作时，施加RF 电源到天花板电极，并且每当要清洁反应堆时，通过向天花板电极和线圈天线施加RF功率来清洁反应器，同时将蚀刻剂气体引入真空室。 在另一个实施方案中，该方法包括通过将沉积前体气体引入室中，同时通过在将天线电极接地的同时向线圈天线施加RF功率来维持其中的电感耦合等离子体来执行化学气相沉积，并通过引入来清洁反应器 前体清洗气体进入室，同时通过向天花板电极施加RF功率来在室内维持电容耦合的等离子体。

    Deposition chamber and method for depositing low dielectric constant films
    6.
    发明授权
    Deposition chamber and method for depositing low dielectric constant films 失效
    沉积室和沉积低介电常数膜的方法

    公开(公告)号：US06833052B2

    公开(公告)日：2004-12-21

    申请号：US10283565

    申请日：2002-10-29

    申请人： Shijian Li ,  Yaxin Wang ,  Fred C. Redeker ,  Tetsuya Ishikawa ,  Alan W. Collins

    发明人： Shijian Li ,  Yaxin Wang ,  Fred C. Redeker ,  Tetsuya Ishikawa ,  Alan W. Collins

    IPC分类号： C23F1600

    CPC分类号： C23C16/45574 ,  C23C16/401 ,  C23C16/45512 ,  C23C16/45514 ,  C23C16/45576 ,  H01J37/3244

    摘要： An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.

    摘要翻译： 改进的沉积室（2）包括限定容纳衬底支撑件（14）的腔室（18）的壳体（4）。 氧和SiF 4的混合物通过一组第一喷嘴（34）输送，并且硅烷通过一组第二喷嘴（34a）输送到围绕衬底支撑件的周边（40）的腔室中。 将硅烷（或硅烷和SiF 4的混合物）和氧分别从孔口（64,76）中心地注入到基底上方的腔室中。 气体的均匀分散与每种气体的最佳流速相结合，导致薄膜均匀低（低于3.4）的介电常数。

    Gas distribution in deposition chambers
    9.
    发明授权
    Gas distribution in deposition chambers 有权
    沉积室中的气体分布

    公开(公告)号：US06251187B1

    公开(公告)日：2001-06-26

    申请号：US09433086

    申请日：1999-11-03

    申请人： Shijian Li ,  Fred C. Redeker ,  Tetsuya Ishikawa

    发明人： Shijian Li ,  Fred C. Redeker ,  Tetsuya Ishikawa

    IPC分类号： C23C1600

    CPC分类号： C23C16/507 ,  C23C16/4405 ,  C23C16/455 ,  C23C16/5096 ,  C23C16/517 ,  H01J37/3244

    摘要： An improved deposition chamber (2) includes a housing (4) defining a vacuum chamber (18) which houses a substrate support (14). A set of first nozzles (34) have orifices (38) opening into the vacuum chamber in a circumferential pattern spaced apart from and generally overlying the periphery (40) of the substrate support. One or more seconds nozzle (56, 56a), positioned centrally above the substrate support, inject process gases into the vacuum chamber to improve deposition thickness uniformity. Deposition thickness uniformity is also improved by ensuring that the process gases are supplied to the first nozzles at the same pressure. If needed, enhanced cleaning of the nozzles can be achieved by slowly drawing a cleaning gas from within the vacuum chamber in a reverse flow direction through the nozzles using a vacuum pump (84).

    摘要翻译： 改进的沉积室（2）包括限定容纳衬底支撑件（14）的真空室（18）的壳体（4）。 一组第一喷嘴（34）具有以与基板支撑件的周边（40）间隔开并且通常覆盖基板支撑件的周边（40）的圆周图案而开口进入真空室的孔口（38）。 位于基板支架上方中心的一个或多个秒喷嘴（56,56a）将工艺气体注入真空室以改善沉积厚度均匀性。 通过确保将工艺气体以相同的压力供应到第一喷嘴，也提高了沉积厚度均匀性。 如果需要，可以通过使用真空泵（84）通过喷嘴沿反向流动方向从真空室内缓慢地抽取清洁气体来实现喷嘴的增强清洁。