公开(公告)号：US3974769A

公开(公告)日：1976-08-17

申请号：US581058

申请日：1975-05-27

申请人： Frederick Hochberg ,  Arnold Reisman

发明人： Frederick Hochberg ,  Arnold Reisman

IPC分类号： G03G15/10 ,  B41J2/01 ,  B41M1/42 ,  B41M7/00 ,  G01D15/16 ,  G03G9/08 ,  G03G13/10 ,  G03G15/11 ,  G03G19/00 ,  G03G5/12

CPC分类号： B41M7/00 ,  B41M1/42 ,  G01D15/16 ,  G03G9/08 ,  Y10S101/37

摘要： A first mist having at least one material is selectively applied to selected portions of a recording surface to form desired characters or other information thereon. A second mist of a material which reacts with the one material is applied to the recording surface. The reaction of the two materials forms a compound on the selected portions of the recording surface having a sufficient contrast with the recording surface to produce characters or other information on the recording surface. If the one material has an ink applied therewith to the recording surface, the material in the second mist reacts with the one material to enhance the contrast of the ink on the recording surface.

摘要翻译： 具有至少一种材料的第一雾被选择性地施加到记录表面的选定部分以形成所需的字符或其它信息。 将与该材料反应的材料的第二雾施加到记录表面。 两种材料的反应在记录表面的选定部分上形成与记录表面具有足够对比度的化合物，以在记录表面上产生字符或其他信息。 如果一种材料将油墨施加到记录表面上，则第二雾中的材料与一种材料反应，以增强记录表面上的油墨的对比度。

公开(公告)号：US5168078A

公开(公告)日：1992-12-01

申请号：US631671

申请日：1990-12-21

申请人： Arnold Reisman ,  Iwona Turlik

发明人： Arnold Reisman ,  Iwona Turlik

IPC分类号： H01L23/48 ,  H01L23/535

CPC分类号： H01L23/535 ,  H01L23/481 ,  H01L2924/0002 ,  Y10S148/012 ,  Y10S148/135

摘要： A method of forming a high density semiconductor structure including one or more buried metal layers. One or more metal layers may be formed on a first semiconductor substrate, with the metal layer or layers being insulated from one another and from the substrate. One or more metal layers may be formed on the surface of a second substrate which may or may not be a semiconductor substrate. The topmost metal layers, either or both of which may have an insulating layer thereon, are placed in contact and heated in an oxidizing ambient atmosphere to form a bond therebetween. One or more vias connect the buried metal layers to the active devices in the substrates. The buried metal layers may form buried power and ground planes and buried metallization patterns for device interconnection.

摘要翻译： 一种形成包括一个或多个掩埋金属层的高密度半导体结构的方法。 一个或多个金属层可以形成在第一半导体衬底上，金属层彼此绝缘并且与衬底绝缘。 可以在可以是半导体衬底也可以不是半导体衬底的第二衬底的表面上形成一个或多个金属层。 将其中的一个或两者中的一个或两个可以具有绝缘层的最顶层金属层放置在接触中并在氧化环境气氛中加热以在它们之间形成结合。 一个或多个通孔将掩埋的金属层连接到基板中的有源器件。 掩埋金属层可以形成掩埋电源和接地层以及用于器件互连的掩埋金属化图案。

公开(公告)号：US5145714A

公开(公告)日：1992-09-08

申请号：US605688

申请日：1990-10-30

申请人： Arnold Reisman ,  Dorota Temple ,  Iwona Turlik

发明人： Arnold Reisman ,  Dorota Temple ,  Iwona Turlik

IPC分类号： H01L21/3205 ,  H01L21/768 ,  H05K3/22

CPC分类号： H01L21/76892 ,  H01L21/32051 ,  H05K3/225

摘要： A thermally activated method of depositing a metal on a localized microscopic portion of a substrate, that can be carried out at relatively low process temperatures, and that is particularly useful for depositing metals in an amount and purity sufficient for electrical conductivity on substrates containing microelectronic circuits and devices or their respective precursors. The method comprises heating a substrate in the presence of a vaporized metal-organic composition to a first temperature that is just below the temperature at which the vaporized metal-organic composition will dissociate into a metal and an organic-containing portion, and then raising the temperature of a localized portion of the heated substrate from the first temperature to a second, higher temperature at which the vaporized metal-organic composition will dissociate into a metal and an organic-containing portion but below the temperature at which the organic-containing portion will decompose to produce and deposit organic decomposition products upon the localized portion, and until an amount of the dissociated metal sufficient for electrical conductivity deposits upon the localized portion.

摘要翻译： 一种热激活的方法，其在基底的局部微观部分上沉积金属，其可以在相对较低的工艺温度下进行，并且特别适用于在含有微电子电路的基底上沉积足够导电性的量和纯度的金属 设备或其各自的前体。 该方法包括在蒸发的金属 - 有机组合物的存在下将基底加热至刚好低于蒸发的金属 - 有机组合物将分解成金属和含有机物部分的温度的第一温度，然后将 被加热的衬底的局部部分的温度从第一温度升至第二较高的温度，在此温度下蒸发的金属 - 有机组合物将分解成金属和含有机物的部分，但低于含有有机物部分的温度 分解产生并将有机分解产物沉积在局部部分上，并且直到一定量的离解金属足以导电沉积在局部部分上。

公开(公告)号：US5112439A

公开(公告)日：1992-05-12

申请号：US585238

申请日：1990-11-14

申请人： Arnold Reisman ,  Gary W. Jones

发明人： Arnold Reisman ,  Gary W. Jones

IPC分类号： C23C16/04 ,  C23C16/14 ,  H01L21/20 ,  H01L21/285 ,  H01L21/3065 ,  H01L21/768

CPC分类号： H01L21/02546 ,  C23C16/04 ,  C23C16/14 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/28525 ,  H01L21/28562 ,  H01L21/30655 ,  H01L21/76879 ,  Y10S438/913

摘要： An alternating cyclic (A.C.) method for selectively depositing materials, on the surface of a substrate without depositing the material on an adjacent mask layer. A gas of a reducible compound of the material and a reducing gas, preferably hydrogen, are simultaneously flowed through a reaction chamber to deposit the material on the substrate surface and to a lesser extent on the mask layer. Then, the flow of reducing gas is interrupted to cause the reducible compound gas to etch the material which forms on the mask layer in a disproportionation reaction. The deposition and etch steps are repeated in an alternating cyclic fashion until the requisite thickness is deposited. The process may take place in a single reaction chamber, using only the reducible compound gas and pulsed flow of the reducing gas.

摘要翻译： 用于在衬底的表面上选择性地沉积材料的交替循环（A.C.）方法，而不在相邻掩模层上沉积材料。 材料的可还原化合物和还原气体（优选氢气）的气体同时流过反应室，以将材料沉积在衬底表面上并在较小程度上沉积在掩模层上。 然后，中和还原气体的流动导致可还原化合物气体在歧化反应中蚀刻在掩模层上形成的材料。 以交替的循环方式重复沉积和蚀刻步骤，直到沉积必需的厚度。 该过程可以在单个反应室中进行，仅使用可还原的化合物气体和还原气体的脉冲流。

公开(公告)号：US5098494A

公开(公告)日：1992-03-24

申请号：US356005

申请日：1989-05-23

申请人： Arnold Reisman

发明人： Arnold Reisman

IPC分类号： C04B37/00

CPC分类号： C04B37/006 ,  C04B37/005 ,  C04B2235/6567 ,  C04B2235/658 ,  C04B2237/062 ,  C04B2237/064 ,  C04B2237/121 ,  C04B2237/16 ,  C04B2237/365 ,  C04B2237/366 ,  C04B2237/708 ,  C04B2237/72 ,  Y10T428/24926 ,  Y10T428/252 ,  Y10T428/2949

摘要： Ceramic parts may be bonded by forming bonding layers of silicon dioxide, silicon, metal or metal oxide on the parts, placing the bonding layers adjacent one another and heating in an oxidizing ambient atmosphere to form an oxide bond therebetween. Pressure may be applied between the ceramic parts to aid in bonding. A reliable bonded ceramic structure is thereby provided.

公开(公告)号：US5037775A

公开(公告)日：1991-08-06

申请号：US402794

申请日：1989-09-05

申请人： Arnold Reisman

发明人： Arnold Reisman

IPC分类号： C23C16/04 ,  C23C16/08 ,  C23C16/14 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3065 ,  H01L21/768

CPC分类号： H01L21/28562 ,  C23C16/04 ,  C23C16/14 ,  H01L21/30655 ,  H01L21/76879 ,  Y10S148/057 ,  Y10S148/058

摘要： An alternating cyclic (A.C.) method for selectively depositing single element semiconductor materials, on the surface of a substrate without depositing the material on an adjacent mask layer. A gas of a reducible compound of the material and a reducing gas, preferably hydrogen, are simultaneously flowed through a reaction chamber to deposit the material on the substrate surface and to a lesser extent on the mask layer. Then, the flow of reducing gas is interrupted to cause the reducible compound gas to etch the material which forms on the mask layer in a disproportionation reaction. The deposition and etch steps are repeated in an alternating cyclic fashion until the requisite thickness is deposited. The process may take place in a single reaction chamber, using only the reducible compound gas and pulsed flow of the reducing gas.

公开(公告)号：US4774630A

公开(公告)日：1988-09-27

申请号：US781981

申请日：1985-09-30

申请人： Arnold Reisman ,  Carlton M. Osburn ,  Lih-Tyng Hwang ,  Jagdish Narayan

发明人： Arnold Reisman ,  Carlton M. Osburn ,  Lih-Tyng Hwang ,  Jagdish Narayan

IPC分类号： H01L23/32 ,  G02B6/42 ,  H01L21/60 ,  H01L23/473 ,  H01L23/498 ,  H01R33/76 ,  H05K7/10 ,  H02B1/00

CPC分类号： H01L24/80 ,  G02B6/42 ,  H01L23/473 ,  H01L23/498 ,  H05K7/1061 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/3025

摘要： Apparatus for mounting a semiconductor device chip and making electrical connections thereto is disclosed. A semiconductor device chip has its backside connected to the surface of a substrate, and its upper surface includes a plurality of electrical pads across the entire surface thereof. A translator chip having a plurality of first electrical contacts disposed generally across the interior portion thereof are in electrical contact with the semiconductor device chip electrical pads, and a plurality of second electrical contacts disposed generally around the perimeter of the translator chip are electrically connected with the electrical terminals in the substrate to which the chip is attached. Heat may be removed from the semiconductor device chip through its backside via cooling channels in the substrate.

摘要翻译： 公开了用于安装半导体器件芯片并与其连接的装置。 半导体器件芯片的背面连接到衬底的表面，并且其上表面在其整个表面上包括多个电焊盘。 具有大致横跨其内部布置的多个第一电触点的转换器芯片与半导体器件芯片电焊垫电接触，并且大体上围绕转换器芯片的周边设置的多个第二电触头与 芯片所连接的基板中的电端子。 可以通过其背面通过衬底中的冷却通道从半导体器件芯片去除热量。

公开(公告)号：US4007464A

公开(公告)日：1977-02-08

申请号：US543600

申请日：1975-01-23

申请人： Ernest Bassous ,  Lawrence Kuhn ,  Arnold Reisman ,  Howard H. Taub

发明人： Ernest Bassous ,  Lawrence Kuhn ,  Arnold Reisman ,  Howard H. Taub

IPC分类号： B41J2/025 ,  B41J2/16 ,  G06K15/10 ,  H04N1/034 ,  G01D15/18

CPC分类号： B41J2/1629 ,  B41J2/025 ,  B41J2/162 ,  B41J2/1631

摘要： In an ink jet printing system, a single nozzle or an array of nozzles are etched in a semiconductor material such as silicon. Each nozzle has polygonal or N-sided entrance and exit apertures of different cross-sectional area. Preferably, the nozzle is in the shape of a truncated pyramid with the entrance and exit apertures being substantially square in cross-section. The corners of the apertures and wall interfaces may be rounded to reduce stress concentrations.

摘要翻译： 在喷墨打印系统中，在诸如硅的半导体材料中蚀刻单个喷嘴或喷嘴阵列。 每个喷嘴具有不同横截面积的多边形或N侧入口和出口孔。 优选地，喷嘴是截头棱锥的形状，其中入口孔和出口孔的横截面基本上是正方形。 孔和壁界面的角可以是圆形的以减少应力集中。

公开(公告)号：US4667404A

公开(公告)日：1987-05-26

申请号：US781982

申请日：1985-09-30

申请人： Arnold Reisman ,  Carlton M. Osburn

发明人： Arnold Reisman ,  Carlton M. Osburn

IPC分类号： H01L21/3205 ,  H01L21/48 ,  H01L21/82 ,  H01L23/52 ,  H01L23/538 ,  H05K1/00 ,  H05K3/02

CPC分类号： H01L23/5382 ,  H01L21/485 ,  H05K1/0289 ,  H01L2924/0002 ,  Y10T29/49156

摘要： A microelectronics apparatus and a method of fabricating customized connections between wiring planes superposed on a substrate is disclosed. A first wiring plane having multiple conductors is formed upon the substrate. An insulating layer is formed that overlies and electrically insulates the first wiring plane. A second wiring plane having multiple conductors is formed above the insulating layer by forming multiple conductors that are electrically connected to the first wiring plane with selected conductors of the first wiring plane being electrically connected to selected conductors of the second wiring plane. The connections may be modified by breaking selected ones of the electrical connections between the first and second wiring planes to customize the electrical interconnections.

摘要翻译： 公开了一种微电子设备和在叠置在基板上的布线平面之间制造定制连接的方法。 具有多个导体的第一布线平面形成在基板上。 形成绝缘层，其覆盖并使第一布线平面电绝缘。 通过形成与第一布线平面电连接的多个导体，在绝缘层的上方形成具有多个导体的第二布线平面，第一布线面的选定导体与第二布线平面的选定导体电连接。 可以通过断开第一和第二布线平面之间的电连接的选定的连接来修改连接以定制电互连。

公开(公告)号：US4364166A

公开(公告)日：1982-12-21

申请号：US298551

申请日：1981-09-02

申请人： Billy L. Crowder ,  Arnold Reisman

发明人： Billy L. Crowder ,  Arnold Reisman

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L23/29 ,  H01L23/31 ,  H01L23/522 ,  H01L23/532 ,  H01L27/108 ,  H01L29/49 ,  H01L21/225

CPC分类号： H01L29/4983 ,  H01L21/28061 ,  H01L23/291 ,  H01L23/3171 ,  H01L23/5222 ,  H01L23/53271 ,  H01L27/10805 ,  H01L29/4933 ,  H01L29/66606 ,  H01L2924/0002 ,  H01L2924/19041 ,  Y10S438/958

摘要： An improved interconnection for semiconductor integrated circuits is provided by a member made of doped polycrystalline silicon and metal silicide that provides the simultaneous advantages of high conductivity and reduced overlap capacitance in multilayer integrated circuit devices. Such interconnecting members are useable to produce field effect transistor type devices.

摘要翻译： 半导体集成电路的改进的互连由掺杂多晶硅和金属硅化物制成的构件提供，其提供了多层集成电路器件中高导电性和降低重叠电容的同时优势。 这种互连构件可用于产生场效应晶体管型器件。