公开(公告)号：US09159683B2

公开(公告)日：2015-10-13

申请号：US14176697

申请日：2014-02-10

Applicant: GLOBALFOUNDRIES Inc. ,  Intermolecular Inc.

Inventor： Reiner Willeke ,  Tanya Atanasova ,  Anh Duong ,  Greg Nowling

IPC: H01L21/44 ,  H01L23/00 ,  H01L21/3213

CPC classification number: H01L24/11 ,  C23F1/02 ,  C23F1/26 ,  C23F1/34 ,  C23F1/44 ,  H01L21/32134 ,  H01L21/32139 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03614 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05572 ,  H01L2224/05582 ,  H01L2224/05647 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11848 ,  H01L2224/13022 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2924/014 ,  H01L2924/01082 ,  H01L2924/01047 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2924/01079 ,  H01L2924/01029 ,  H01L2924/01051 ,  H01L2924/00011 ,  H01L2924/00012 ,  H01L2924/04953 ,  H01L2924/04941

Abstract: Methods for etching copper in the fabrication of integrated circuits are disclosed. In one exemplary embodiment, a method for fabricating an integrated circuit includes providing an integrated circuit structure including a copper bump structure and a copper seed layer underlying and adjacent to the copper bump structure and etching the seed layer selective to the copper bump structure using a wet etching chemistry consisting of H3PO4 in a volume percentage of about 0.07 to about 0.36, H2O2 in a volume percentage of about 0.1 to about 0.7, and a remainder of H2O, and optionally NH4OH.

Abstract translation: 公开了在制造集成电路中蚀刻铜的方法。 在一个示例性实施例中，一种用于制造集成电路的方法包括提供集成电路结构，该集成电路结构包括铜凸块结构和位于铜凸块结构之下并与铜凸起结构相邻的铜籽晶层，并使用湿法蚀刻对铜凸块结构有选择性的晶种层 以约0.07至约0.36的体积百分比由H 3 PO 4组成的体积百分比为约0.1至约0.7的H 2 O 2，以及剩余的H 2 O和任选的NH 4 OH的蚀刻化学。

公开(公告)号：US20150228595A1

公开(公告)日：2015-08-13

申请号：US14176697

申请日：2014-02-10

Applicant: Intermolecular Inc. ,  GLOBALFOUNDRIES Inc.

Inventor： Reiner Willeke ,  Tanya Atanasova ,  Anh Duong ,  Greg Nowling

IPC: H01L23/00 ,  H01L21/3213

CPC classification number: H01L24/11 ,  C23F1/02 ,  C23F1/26 ,  C23F1/34 ,  C23F1/44 ,  H01L21/32134 ,  H01L21/32139 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03614 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05572 ,  H01L2224/05582 ,  H01L2224/05647 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11848 ,  H01L2224/13022 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2924/014 ,  H01L2924/01082 ,  H01L2924/01047 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2924/01079 ,  H01L2924/01029 ,  H01L2924/01051 ,  H01L2924/00011 ,  H01L2924/00012 ,  H01L2924/04953 ,  H01L2924/04941

Abstract: Methods for etching copper in the fabrication of integrated circuits are disclosed. In one exemplary embodiment, a method for fabricating an integrated circuit includes providing an integrated circuit structure including a copper bump structure and a copper seed layer underlying and adjacent to the copper bump structure and etching the seed layer selective to the copper bump structure using a wet etching chemistry consisting of H3PO4 in a volume percentage of about 0.07 to about 0.36, H2O2 in a volume percentage of about 0.1 to about 0.7, and a remainder of H2O, and optionally NH4OH.

Abstract translation: 公开了在制造集成电路中蚀刻铜的方法。 在一个示例性实施例中，一种用于制造集成电路的方法包括提供集成电路结构，该集成电路结构包括铜凸块结构和位于铜凸块结构之下并与铜凸起结构相邻的铜籽晶层，并使用湿法蚀刻对铜凸块结构有选择性的晶种层 以约0.07至约0.36的体积百分比由H 3 PO 4组成的体积百分比为约0.1至约0.7的H 2 O 2，以及剩余的H 2 O和任选的NH 4 OH的蚀刻化学。

公开(公告)号：US09214436B2

公开(公告)日：2015-12-15

申请号：US14172323

申请日：2014-02-04

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Tanya Andreeva Atanasova ,  Reiner Willeke ,  Anh Ngoc Duong

IPC: H01L21/44 ,  H01L23/00

CPC classification number: H01L24/05 ,  C23F1/18 ,  C23F1/26 ,  C23F1/44 ,  H01L21/32134 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03614 ,  H01L2224/0381 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05016 ,  H01L2224/05027 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11614 ,  H01L2224/1181 ,  H01L2224/11831 ,  H01L2224/13016 ,  H01L2224/13023 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13166 ,  H01L2924/0531 ,  H01L2924/0549 ,  H01L2924/20102 ,  H01L2924/206 ,  H01L2924/2064 ,  H01L2924/00014 ,  H01L2224/03462 ,  H01L2924/01047

Abstract: Methods for wet etching a UBM layer and the resulting devices are disclosed. Embodiments may include patterning metal bumps on a wafer that has at least two metal layers thereon; exposing the wafer to a first acid solution to remove a portion of a first of the two metal layers exposed by the patterning of the metal bumps; and exposing the wafer to a second acid solution to remove a portion a second of the two metal layers exposed by the patterning of the metal bumps and the exposure of the wafer to the first acid solution, wherein an undercut below the metal bumps, formed by removal of the portions of the first and second metal layers, is less than 1.5 microns.

Abstract translation: 公开了用于湿法蚀刻UBM层和所得到的器件的方法。 实施例可以包括在其上具有至少两个金属层的晶片上图案化金属凸块; 将晶片暴露于第一酸溶液以除去通过金属凸块的图案化暴露的两个金属层中的第一个金属层的第一部分; 以及将所述晶片暴露于第二酸溶液以除去通过所述金属凸块的图案化而露出的所述两个金属层中的一部分的一部分，以及所述晶片暴露于所述第一酸溶液，其中在所述金属凸块下方形成底切， 去除第一和第二金属层的部分小于1.5微米。