Optoelectronic component
    1.
    发明授权
    Optoelectronic component 有权
    光电元件

    公开(公告)号:US07838357B2

    公开(公告)日:2010-11-23

    申请号:US10494160

    申请日:2002-10-28

    IPC分类号: H01L218/8238

    摘要: Optoelectronic component, having a housing body (2), an optoelectronic semiconductor chip (3) arranged in a recess (6) of the housing body, and having electrical terminals (1A, 1B), the semiconductor chip being electrically conductively connected to the electrical terminals of the leadframe. The housing body (2) is formed from an encapsulation material, with a filler which has a high degree of reflection in a wavelength range from the UV range.

    摘要翻译: 具有壳体(2),布置在壳体主体的凹部(6)中的光电子半导体芯片(3),并具有电端子(1A,1B)的光电子部件,该半导体芯片导电地连接到电气 引线框的端子。 壳体(2)由封装材料形成,其具有在从UV范围的波长范围内具有高反射度的填料。

    Optoelectronic semiconductor component
    2.
    发明授权
    Optoelectronic semiconductor component 有权
    光电半导体元件

    公开(公告)号:US09029907B2

    公开(公告)日:2015-05-12

    申请号:US13515256

    申请日:2010-11-17

    摘要: An optoelectronic semiconductor component includes a radiation emitting semiconductor chip having a radiation coupling out area. Electromagnetic radiation generated in the semiconductor chip leaves the semiconductor chip via the radiation coupling out area. A converter element is disposed downstream of the semiconductor chip at its radiation coupling out area. The converter element is configured to convert electromagnetic radiation emitted by the semiconductor chip. The converter element has a first surface facing away from the radiation coupling out area. A reflective encapsulation encapsulates the semiconductor chip and portions of the converter element at side areas in a form-fitting manner. The first surface of the converter element is free of the reflective encapsulation.

    摘要翻译: 光电子半导体元件包括具有辐射耦合输出区域的辐射发射半导体芯片。 在半导体芯片中产生的电磁辐射通过辐射耦合输出区离开半导体芯片。 转换器元件设置在半导体芯片的辐射耦合输出区域的下游。 转换器元件被配置为转换由半导体芯片发射的电磁辐射。 转换器元件具有背离辐射耦合输出区域的第一表面。 反射封装以形状配合的方式将半导体芯片和转换器元件的部分封装在侧面区域。 转换器元件的第一表面没有反射封装。

    Method for Producing a Housing for an Optoelectronic Semiconductor Device, Housing, and Optoelectronic Semiconductor Device
    4.
    发明申请
    Method for Producing a Housing for an Optoelectronic Semiconductor Device, Housing, and Optoelectronic Semiconductor Device 有权
    用于生产光电半导体器件,外壳和光电半导体器件的壳体的方法

    公开(公告)号:US20120280116A1

    公开(公告)日:2012-11-08

    申请号:US13513784

    申请日:2010-11-17

    摘要: A method can be used to produce a housing for an optoelectronic semiconductor device. A reflector part, which has an inner area configured to reflect electromagnetic radiation, is encased in places with a housing material using an injection molding method. The inner area of the reflector part remains free of the housing material at least in places. The reflector part is formed with a first plastic material and the housing material is formed with a second plastic material that is different than the first plastic material. The first plastic material and the second plastic material differ from one another with regard to at least thermal stability or resistance to electromagnetic radiation.

    摘要翻译: 可以使用一种方法来生产用于光电半导体器件的外壳。 具有构造成反射电磁辐射的内部区域的反射器部件使用注射成型方法被封装在具有外壳材料的位置。 至少在地方,反射器部分的内部区域保持没有外壳材料。 反射器部分形成有第一塑料材料,壳体材料形成有与第一塑料材料不同的第二塑料材料。 关于至少热稳定性或耐电磁辐射,第一塑料材料和第二塑料材料彼此不同。

    Optical element and optoelectronic component comprising such an optical element
    5.
    发明授权
    Optical element and optoelectronic component comprising such an optical element 有权
    包括这种光学元件的光学元件和光电子部件

    公开(公告)号:US08168991B2

    公开(公告)日:2012-05-01

    申请号:US11904173

    申请日:2007-09-26

    申请人: Gertrud Kräuter

    发明人: Gertrud Kräuter

    IPC分类号: H01L33/00

    摘要: An optical element (1) is specified comprising an optical body (2) containing a plastic material. The optical body (2) is completely encapsulated by a protective layer (3) containing a silicon oxide. An optoelectronic component comprising such an optical element is furthermore described.

    摘要翻译: 光学元件(1)被规定为包括含有塑料材料的光学体(2)。 光学体(2)被含有氧化硅的保护层(3)完全封装。 进一步描述包括这种光学元件的光电子部件。

    METHOD FOR PRODUCING A LIGHT-EMITTING DIODE
    6.
    发明申请
    METHOD FOR PRODUCING A LIGHT-EMITTING DIODE 有权
    生产发光二极管的方法

    公开(公告)号:US20120070926A1

    公开(公告)日:2012-03-22

    申请号:US13265407

    申请日:2010-04-08

    申请人: Gertrud Kräuter

    发明人: Gertrud Kräuter

    IPC分类号: H01L33/50

    摘要: A method for producing a light-emitting diode includes providing a light-emitting diode chip including a semiconductor body, and applying a luminescence conversion material to an outer area of the semiconductor body by thermal spraying such that at least part of electromagnetic radiation generated during operation of the light-emitting diode impinges on the luminescence conversion material, or providing a radiation-transmissive carrier, applying a luminescence conversion material to an outer area of the carrier by thermal spraying, and arranging the carrier at a radiation exit area of the light-emitting diode chip such that at least part of electromagnetic radiation generated during operation of the light-emitting diode impinges on the luminescence conversion material.

    摘要翻译: 一种制造发光二极管的方法包括提供包括半导体本体的发光二极管芯片,并通过热喷涂将发光转换材料施加到半导体主体的外部区域,使得在操作期间产生的电磁辐射的至少一部分 所述发光二极管照射在所述发光转换材料上,或者提供辐射透射载体,通过热喷涂将发光转换材料施加到所述载体的外部区域,以及将所述载体布置在所述发光二极管的辐射出射区域处, 使得在发光二极管的操作期间产生的电磁辐射的至少一部分撞击发光转换材料。

    Optoelectronic Semiconductor Component
    10.
    发明申请
    Optoelectronic Semiconductor Component 有权
    光电半导体元件

    公开(公告)号:US20120299041A1

    公开(公告)日:2012-11-29

    申请号:US13515256

    申请日:2010-11-17

    IPC分类号: H01L33/60

    摘要: An optoelectronic semiconductor component includes a radiation emitting semiconductor chip having a radiation coupling out area. Electromagnetic radiation generated in the semiconductor chip leaves the semiconductor chip via the radiation coupling out area. A converter element is disposed downstream of the semiconductor chip at its radiation coupling out area. The converter element is configured to convert electromagnetic radiation emitted by the semiconductor chip. The converter element has a first surface facing away from the radiation coupling out area. A reflective encapsulation encapsulates the semiconductor chip and portions of the converter element at side areas in a form-fitting manner. The first surface of the converter element is free of the reflective encapsulation.

    摘要翻译: 光电子半导体元件包括具有辐射耦合输出区域的辐射发射半导体芯片。 在半导体芯片中产生的电磁辐射通过辐射耦合输出区离开半导体芯片。 转换器元件设置在半导体芯片的辐射耦合输出区域的下游。 转换器元件被配置为转换由半导体芯片发射的电磁辐射。 转换器元件具有背离辐射耦合输出区域的第一表面。 反射封装以形状配合的方式将半导体芯片和转换器元件的部分封装在侧面区域。 转换器元件的第一表面没有反射封装。