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1.发明授权Method of creating patterned multilayer films for use in production of semiconductor circuits and systems 失效制造用于制造半导体电路和系统的图案化多层膜的方法
公开(公告)号：US4908298A
公开(公告)日：1990-03-13
申请号：US117383
申请日：1987-10-30
IPC分类号： G03F7/40
CPC分类号： G03F7/405 , Y10S438/948
摘要： A method is provided for creating multilayer patterned films wherein at least one layer is an etch-resistant patterned layer, and wherein either positive or negative tone patterns can be obtained.The etch-resistant patterned layer is obtained by reacting a patterned polymeric film containing reactive functional groups with an organometallic reagent such as a silicon-containing compound. The pattern is subsequently transferred through adjacent polymeric layers using an oxygen plasma or equivalent dry-etch method.
摘要翻译： 提供了一种用于产生多层图案化膜的方法，其中至少一层是耐蚀刻图案层，并且其中可以获得正或负色调图案。 通过使含有反应性官能团的图案化聚合物膜与有机金属试剂如含硅化合物反应，获得耐蚀刻图案层。 随后使用氧等离子体或等效的干法蚀刻方法将图案转移通过相邻的聚合物层。
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2.发明授权
公开(公告)号：US4551418A
公开(公告)日：1985-11-05
申请号：US702514
申请日：1985-02-19
IPC分类号： H01L21/30 , G03F7/20 , G03F7/26 , G03F7/38 , H01L21/027 , H01L21/302 , H01L21/3065 , G03C5/00
CPC分类号： G03F7/265
摘要： Negative relief images are generated by a process comprising the use of cationic polymerization and plasma etching.
摘要翻译： 负浮雕图像通过包括使用阳离子聚合和等离子体蚀刻的方法产生。
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公开(公告)号：US4552833A
公开(公告)日：1985-11-12
申请号：US609690
申请日：1984-05-14
IPC分类号： G03F7/30 , G03F7/038 , G03F7/039 , G03F7/26 , G03F7/36 , G03F7/38 , H01L21/027 , G03C5/16 , G03C1/72
摘要： A negative tone resist image is achieved by (1) coating a substrate with a film of a polymer containing a masked, reactive functionality; (2) imagewise exposing the film to radiation in a fashion such that the masked functionality is liberated; (3) contacting the film with an organometallic reagent; (4) developing the relief image by the oxygen plasma etching.
摘要翻译： 负色调抗蚀剂图像通过（1）用含有掩蔽的反应性官能团的聚合物膜涂覆基材来实现; （2）以使掩蔽的功能被释放的方式将膜成像曝光于辐射; （3）使膜与有机金属试剂接触; （4）通过氧等离子体蚀刻显影浮雕图像。
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公开(公告)号：US4657845A
公开(公告)日：1987-04-14
申请号：US818584
申请日：1986-01-14
摘要： A positive tone photoresist is obtained without a solvent development step. The resist is a polymer containing masked reactive functionality which is imagewise exposed to unmask the functionality then treated with a non-organometallic reagent to remask that functionality. Following flood exposure, the resist is treated with an organometallic reagent containing an element which forms a non-volatile oxide. It is then developed by means of oxygen reactive ion etching.
摘要翻译： 在没有溶剂显影步骤的情况下获得正色调光致抗蚀剂。 抗蚀剂是含有掩蔽的反应性官能团的聚合物，其被成像曝光以揭示随后用非有机金属试剂处理的功能以重新获得该功能。 在暴露曝光后，用含有形成非挥发性氧化物的元素的有机金属试剂处理抗蚀剂。 然后通过氧反应离子蚀刻来开发。
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5.发明授权Process for enhancing the resistance of a resist image to reactive ion etching and to thermal flow 失效用于增强抗蚀剂图像对反应离子蚀刻和热流的电阻的方法
公开(公告)号：US4690838A
公开(公告)日：1987-09-01
申请号：US899589
申请日：1986-08-25
IPC分类号： H01L21/302 , G03F7/40 , H01L21/027 , H01L21/3065 , G03C5/00 , B05D3/04
CPC分类号： G03F7/405
摘要： The reactive ion etching and thermal flow resistance of a resist image is enhanced by contacting the resist image with an alkyl metal compound of magnesium or aluminum.
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公开(公告)号：US5322765A
公开(公告)日：1994-06-21
申请号：US796527
申请日：1991-11-22
申请人： Nicholas J. Clecak , Willard E. Conley , Ranee W.-L. Kwong , Leo L. Linehan , Scott A. MacDonald , Harbans S. Sachdev , Hubert Schlosser , Carlton G. Willson
发明人： Nicholas J. Clecak , Willard E. Conley , Ranee W.-L. Kwong , Leo L. Linehan , Scott A. MacDonald , Harbans S. Sachdev , Hubert Schlosser , Carlton G. Willson
IPC分类号： G03F7/004 , G03F7/029 , G03F7/038 , G03F7/039 , G03F7/26 , G03F7/36 , G03F7/38 , H01L21/027 , H01L21/30 , G03C1/72 , G03F7/00
摘要： Dry developable top surface imageable photoresist compositions which comprise, in admixture, a film-forming aromatic polymer resin activated to electrophilic substitution, an acid catalyzable agent capable of being inserted into the aromatic polymer resin, and a radiation degradable acid generating compound and processes for generating positive tone resist images on substrates therewith.
摘要翻译： 干可显影的顶表面可成像光致抗蚀剂组合物，其包含活化成亲电取代的成膜芳族聚合物树脂，能够插入到芳族聚合物树脂中的酸催化剂，以及可辐射降解酸生成化合物和产生 正色调抵消了基板上的图像。
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7.发明授权Process for imaging of photoresist including treatment of the photoresist with an organometallic compound 失效用于光刻胶成像的方法，包括用有机金属化合物处理光致抗蚀剂
公开(公告)号：US5250395A
公开(公告)日：1993-10-05
申请号：US735420
申请日：1991-07-25
申请人： Robert D. Allen , Scott A. MacDonald , Dennis R. McKean , Hubert Schlosser , Robert J. Twieg , Gregory M. Wallraff , Carlton G. Willson
发明人： Robert D. Allen , Scott A. MacDonald , Dennis R. McKean , Hubert Schlosser , Robert J. Twieg , Gregory M. Wallraff , Carlton G. Willson
摘要： The present invention relates to a process for negative tone imaging of photoresist to improve resolution of lithographic patterns.
摘要翻译： 本发明涉及光刻胶的负色调成像方法，以提高光刻图案的分辨率。
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公开(公告)号：US4810601A
公开(公告)日：1989-03-07
申请号：US880212
申请日：1986-06-30
申请人： Robert D. Allen , Kaolin N. Chiong , Ming-Fea Chow , Scott A. MacDonald , Jer-Ming Yang , Carlton G. Willson
发明人： Robert D. Allen , Kaolin N. Chiong , Ming-Fea Chow , Scott A. MacDonald , Jer-Ming Yang , Carlton G. Willson
CPC分类号： G03F7/265 , G03F7/038 , G03F7/2022 , Y10S430/143 , Y10S430/167 , Y10S430/168
摘要： The present invention is concerned with methods of converting a single resist layer into a multilayered resist.The upper portion of the single resist layer can be converted into a dry-etch resistant form. The conversion can be a blanket conversion of the upper portion of the resist layer or can be a patterned conversion of areas within the upper portion of the layer. A patternwise-converted resist can be oxygen plasma developed.The upper portion of the single resist layer can be patternwise converted into a chemically different composition or structure having altered absorptivity toward radiation. The difference in radiation absorptivity within the patterned upper portion of the resist enables subsequent use of blanket irradiation of the resist surface to create differences in chemical solubility between areas having the altered absorptivity toward radiation and non-altered areas. The difference in chemical solubility enables wet development of the patterned resist.
摘要翻译： 本发明涉及将单个抗蚀剂层转化为多层抗蚀剂的方法。 单个抗蚀剂层的上部可以转化成耐干蚀刻形式。 该转换可以是抗蚀剂层的上部的覆盖转化，或者可以是层的上部内的区域的图案化转换。 图案转换的抗蚀剂可以是氧等离子体显影。 单个抗蚀剂层的上部可以被图案化地转换成具有改变的对辐射的吸收率的化学上不同的组成或结构。 在图案化的抗蚀剂上部中的辐射吸收率的差异使得随后可以使用抗蚀剂表面的毯式照射，从而在对辐射和未改变的区域具有改变的吸收率的区域之间产生化学溶解度的差异。 化学溶解度的差异使得图案化抗蚀剂的湿显影。
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9.发明授权Fully undercut resist systems using E-beam lithography for the fabrication of high resolution MR sensors 有权使用电子束光刻的完全底切抗蚀剂系统用于制造高分辨率MR传感器公开(公告)号：US06821715B2
公开(公告)日：2004-11-23
申请号：US09853345
申请日：2001-05-10
申请人： Robert Edward Fontana, Jr. , Jordan A. Katine , Jennifer Liu , Scott A. MacDonald , Michael J. Rooks , Hugo Alberto Emilio Santini
发明人： Robert Edward Fontana, Jr. , Jordan A. Katine , Jennifer Liu , Scott A. MacDonald , Michael J. Rooks , Hugo Alberto Emilio Santini
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3116 , G11B5/3163 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , Y10T29/49032 , Y10T29/49044 , Y10T29/49052
摘要： A suspended resist bridge suitable for lithographically patterning MR sensors having trackwidths narrower than 0.2 micron is fabricated using the method of the present invention. First, PMGI is spun onto a substrate to form a first thin resist layer. Next, PMMA is spun onto the first resist layer to form a second resist layer. The PMMA layer is exposed to an electron beam to pattern the trackwidth of the MR sensors. E-beam exposed PMMA is then developed in an IPA solution. The resist structure is then placed in a basic solution for dissolving PMGI, which results in a fully undercut resist bridge that is used for patterning the MR sensors.
摘要翻译： 使用本发明的方法制造适于光刻图形具有窄于0.2微米的轨道宽度的MR传感器的悬浮抗蚀桥。 首先，将PMGI旋转到基板上以形成第一薄抗蚀剂层。 接下来，将PMMA旋涂到第一抗蚀剂层上以形成第二抗蚀剂层。 将PMMA层暴露于电子束以对MR传感器的轨道宽度进行图案化。 然后在IPA解决方案中开发电子束暴露的PMMA。 然后将抗蚀剂结构放置在用于溶解PMGI的碱性溶液中，这导致用于图案化MR传感器的完全底切抗蚀剂桥。
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10.发明授权
公开(公告)号：US5312717A
公开(公告)日：1994-05-17
申请号：US949963
申请日：1992-09-24
申请人： Harbans S. Sachdev , John C. Forster , Leo L. Linehan , Scott A. MacDonald , K. Paul L. Muller , Walter E. Mlynko , Linda K. Somerville
发明人： Harbans S. Sachdev , John C. Forster , Leo L. Linehan , Scott A. MacDonald , K. Paul L. Muller , Walter E. Mlynko , Linda K. Somerville
摘要： A method for transferring a pattern through a photoresist layer in the fabrication of submicron semiconductor devices structures is disclosed. A photoresist is provided on a substrate and the same is imagewise exposed with a desired pattern to form exposed and unexposed patterned areas in the top surface of the photoresist. The photoresist is then baked to form cross-linked regions in the exposed pattern areas of the photoresist. Silylation is then performed to incorporate silicon into the unexposed patterned areas of the photoresist, wherein some incorporation of silicon occurs in the exposed patterned crosslinked areas of the photoresist. The patterned photoresist is subsequently etched using a high density, low pressure, anisotropic O.sub.2 plasma alone to produce residue-free images with vertical wall profiles in the photoresist. This method is particularly advantageous with RFI reactive ion etch systems.
摘要翻译： 公开了在制造亚微米半导体器件结构中通过光致抗蚀剂层转印图案的方法。 在基板上提供光致抗蚀剂，并将其以所需图案成像曝光，以在光致抗蚀剂的顶表面中形成曝光和未曝光的图案区域。 然后将光致抗蚀剂烘烤以在光致抗蚀剂的暴露图案区域中形成交联区域。 然后进行硅烷化以将硅结合到光致抗蚀剂的未曝光图案区域中，其中硅的一些掺入发生在光致抗蚀剂的暴露的图案化交联区域中。 随后使用高密度，低压，各向异性O 2等离子体蚀刻图案化的光致抗蚀剂，以在光致抗蚀剂中产生具有垂直壁分布的无残留图像。 该方法对于RFI反应离子蚀刻系统是特别有利的。
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