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公开(公告)号：US07682944B2
公开(公告)日：2010-03-23
申请号：US11957154
申请日：2007-12-14
IPC分类号： H01L21/20
CPC分类号： H01L21/02639 , H01L21/0237 , H01L21/0254 , H01L21/0265 , H01L29/2003 , H01L29/66462
摘要： A substrate comprising a trench lateral epitaxial overgrowth structure including a trench cavity, wherein the trench cavity includes a growth-blocking layer or patterned material supportive of a coalescent Pendeo layer thereon, on at least a portion of an inside surface of the trench. Such substrate is suitable for carrying out lateral epitaxial overgrowth to form a bridged lateral overgrowth formation overlying the trench cavity. The bridged lateral overgrowth formation provides a substrate surface on which epitaxial layers can be grown in the fabrication of microelectronic devices such as laser diodes, high electron mobility transistors, ultraviolet light emitting diodes, and other devices in which low dislocation density is critical. The epitaxial substrate structures of the invention can be formed without the necessity for deep trenches, such as are required in conventional Pendeo epitaxial overgrowth structures.
摘要翻译： 一种衬底，包括包括沟槽腔的沟槽横向外延生长结构，其中所述沟槽腔在所述沟槽的内表面的至少一部分上包括支撑其上的聚结Pendeo层的生长阻挡层或图案化材料。 这种衬底适用于进行横向外延过度生长以形成覆盖在沟槽腔上的桥接横向过度生长层。 桥接的横向过生长形成提供衬底表面，在衬底表面上，可以在其中制造微电子器件（例如激光二极管，高电子迁移率晶体管，紫外发光二极管以及低位错密度至关重要的其它器件）中生长外延层。 可以形成本发明的外延衬底结构，而不需要诸如常规Pendeo外延过度生长结构中所需的深沟槽。
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公开(公告)号：US20090152565A1
公开(公告)日：2009-06-18
申请号：US11957154
申请日：2007-12-14
CPC分类号： H01L21/02639 , H01L21/0237 , H01L21/0254 , H01L21/0265 , H01L29/2003 , H01L29/66462
摘要： A substrate comprising a trench lateral epitaxial overgrowth structure including a trench cavity, wherein the trench cavity includes a growth-blocking layer or patterned material supportive of a coalescent Pendeo layer thereon, on at least a portion of an inside surface of the trench. Such substrate is suitable for carrying out lateral epitaxial overgrowth to form a bridged lateral overgrowth formation overlying the trench cavity. The bridged lateral overgrowth formation provides a substrate surface on which epitaxial layers can be grown in the fabrication of microelectronic devices such as laser diodes, high electron mobility transistors, ultraviolet light emitting diodes, and other devices in which low dislocation density is critical. The epitaxial substrate structures of the invention can be formed without the necessity for deep trenches, such as are required in conventional Pendeo epitaxial overgrowth structures.
摘要翻译： 一种衬底，包括包括沟槽腔的沟槽横向外延生长结构，其中所述沟槽腔在所述沟槽的内表面的至少一部分上包括支撑其上的聚结Pendeo层的生长阻挡层或图案化材料。 这种衬底适用于进行横向外延过度生长以形成覆盖在沟槽腔上的桥接横向过度生长层。 桥接的横向过生长形成提供衬底表面，在衬底表面上，可以在其中制造微电子器件（例如激光二极管，高电子迁移率晶体管，紫外发光二极管以及低位错密度至关重要的其它器件）中生长外延层。 可以形成本发明的外延衬底结构，而不需要诸如常规Pendeo外延过度生长结构中所需的深沟槽。
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公开(公告)号：US09781803B2
公开(公告)日：2017-10-03
申请号：US12325208
申请日：2008-11-30
申请人： George R. Brandes
发明人： George R. Brandes
CPC分类号： H05B33/0887 , H05B33/089
摘要： A thermal management system for reducing or eliminating heat-mediated degradation of LED performance and/or operating life. The system may include a thermal controller arranged to respond to an LED operating condition, and to responsively limit temperature in the LED. The thermal controller in one implementation includes a bypass circuit containing a bypass control element, such as a varistor, Zener diode, or antifuse device, and arranged to divert current from flowing to the LED so that the LED remains in a cool state, e.g., below 75° C. The system may be arranged to (I) at least partially attenuate the power supplied to an LED so as to reduce heat generation in such LED and maintain the LED below a threshold temperature and/or (II) remove heat from the LED to maintain temperature of the LED below a threshold temperature.
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公开(公告)号：US08390101B2
公开(公告)日：2013-03-05
申请号：US13428039
申请日：2012-03-23
IPC分类号： H01L29/20
CPC分类号： H01L29/2003 , C30B25/02 , C30B29/40 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/02664 , H01L29/861 , H01L29/868 , H01L29/872
摘要： The present invention relates to various switching device structures including Schottky diode, P-N diode, and P-I-N diode, which are characterized by low defect density, low crack density, low pit density and sufficient thickness (>2.5 um) GaN layers of low dopant concentration ( 2 KV).
摘要翻译： 本发明涉及包括肖特基二极管，PN二极管和PIN二极管的各种开关器件结构，其特征在于低缺陷密度，低裂纹密度，低凹坑密度和足够厚度（>2.5μm）低掺杂剂浓度的GaN层（ 在导电GaN层上生长的<1E16cm-3）。 这些器件在异质外延衬底（<2KV）上实现了更高的击穿电压，并且在同质外延衬底（> 2KV）上实现了极高的击穿电压。
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公开(公告)号：US08378463B2
公开(公告)日：2013-02-19
申请号：US12974332
申请日：2010-12-21
申请人： George R. Brandes , Robert P. Vaudo , Xueping Xu
发明人： George R. Brandes , Robert P. Vaudo , Xueping Xu
IPC分类号： H01L29/04
CPC分类号： H01S5/32341 , Y10S438/973
摘要： A microelectronic assembly in which a semiconductor device structure is directionally positioned on an off-axis substrate. In an illustrative implementation, a laser diode is oriented on a GaN substrate wherein the GaN substrate includes a GaN (0001) surface off-cut from the direction predominantly towards either the or the family of directions. For a off-cut substrate, a laser diode cavity may be oriented along the direction parallel to lattice surface steps of the substrate in order to have a cleaved laser facet that is orthogonal to the surface lattice steps. For a off-cut substrate, the laser diode cavity may be oriented along the direction orthogonal to lattice surface steps of the substrate in order to provide a cleaved laser facet that is aligned with the surface lattice steps.
摘要翻译： 一种微电子组件，其中半导体器件结构定向地定位在离轴衬底上。 在说明性实施方案中，激光二极管定向在GaN衬底上，其中GaN衬底包括从（0001）方向偏离的GaN（0001）表面，主要朝向<11 20>或<1100> 方向。 对于<11 20>截割衬底，激光二极管空腔可以沿着平行于衬底的晶格表面台阶的<100°方向取向，以便具有与表面晶格步骤正交的切割的激光刻面。 对于<100>切割衬底，激光二极管空腔可以沿着与衬底的晶格表面台阶正交的<100°方向取向，以便提供与表面晶格步骤对准的切割的激光刻面。
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公开(公告)号：US08297061B2
公开(公告)日：2012-10-30
申请号：US11832785
申请日：2007-08-02
申请人： George R. Brandes
发明人： George R. Brandes
IPC分类号： F25B21/00
CPC分类号： H01L33/644 , C09K11/7771 , H01L33/44 , H01L33/502 , H01L33/507 , H01L33/60 , H01L2224/48091 , Y10T29/4935 , H01L2924/00014
摘要： A microelectronic device that in operation generates or includes component(s) that generate heat, in which the device comprises a heat conversion medium that converts such heat into a light emission having a shorter wavelength than such heat, to thereby cool the device and dissipate the unwanted heat by such light output. The heat conversion medium can include an upconverting luminophoric material, e.g., an anti-Stokes phosphor or phosphor composition. The provision of such heat conversion medium enables thermal management of microelectronic devices, e.g., optoelectronic devices, to be achieved in an efficient manner, to prolong the operational service life of devices such as LEDs, laser diodes, etc. that are degraded in performance by excessive heat generation in their operation.
摘要翻译： 在运行中产生或包括产生热量的组件的微电子器件，其中该器件包括将这种热转换成具有比该热量更短的波长的光发射的热转换介质，从而冷却该器件并消散 不必要的热量通过这种光输出。 热转换介质可以包括上转换发光体材料，例如反斯托克斯荧光体或磷光体组合物。 提供这样的热转换介质使得能够以有效的方式实现微电子器件（例如光电器件）的热管理，以延长由性能下降的器件（例如LED，激光二极管等）的器件的使用寿命 其运行过热发热。
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公开(公告)号：US20110248836A1
公开(公告)日：2011-10-13
申请号：US12758007
申请日：2010-04-11
IPC分类号： G08B5/00
CPC分类号： H01L25/167 , H01L25/0753 , H01L33/486 , H01L33/58 , H01L33/60 , H01L2224/32245 , H01L2224/32257 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/12032 , H01L2924/12044 , H01L2924/13033 , H01L2924/00014 , H01L2924/00
摘要： A solid state emitter or emitter package has an associated information containing element including machine readable encoded information that may be indicative of or enable retrieval of information useful for operation and/or control of at least one emitter An information containing element may be dynamically updateable, and may receive signals from at least one sensor arranged to sense a condition or characteristic of an emitter device. Operation of at least one emitter may be adjusted responsive to sensed values and predeveloped operating settings correlated to such values to mitigate degradation of output characteristics. A lighting device such as a lamp or light fixture may include an information exchange element arranged to communicate with an information containing element of an emitter or emitter package. Operation of a lighting device may depend on authentication of an emitter by a lighting.
摘要翻译： 固态发射器或发射器封装具有关联的信息包含元件，其包括机器可读编码信息，其可以指示或使得能够检索对于至少一个发射器的操作和/或控制有用的信息。包含信息的元件可以是动态可更新的，以及 可以从布置成感测发射器装置的状态或特性的至少一个传感器接收信号。 至少一个发射器的操作可以响应于与这些值相关联的感测值和预先开发的操作设置而被调整，以减轻输出特性的劣化。 诸如灯或灯具的照明装置可以包括被布置为与发射器或发射器封装的信息容纳元件通信的信息交换元件。 照明装置的操作可以取决于通过照明对发射器的认证。
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8.发明授权III-nitride optoelectronic device structure with high Al AlGaN diffusion barrier 有权具有高Al AlGaN扩散阻挡层的III族氮化物光电子器件结构公开(公告)号：US07282744B2
公开(公告)日：2007-10-16
申请号：US10840515
申请日：2004-05-06
申请人： Jeffrey S. Flynn , Huoping Xin , George R. Brandes
发明人： Jeffrey S. Flynn , Huoping Xin , George R. Brandes
IPC分类号： H01L29/22
摘要： A III-nitride electronic device structure including doped material, an active region and a barrier material arranged to suppress transport of dopant from the doped material into the active region, wherein the barrier material comprises high-Al content AlxGayN, wherein x+y=1, and x≧0.50. In a specific aspect, AIN is used as a migration/diffusion barrier layer at a thickness of from about 5 to about 200 Angstroms, to suppress flux of magnesium and/or silicon dopant material into the active region of the III-nitride electronic device, e.g., a UV LED optoelectronic device.
摘要翻译： 一种III族氮化物电子器件结构，包括掺杂材料，有源区和阻挡材料，其被布置成抑制掺杂剂从掺杂材料转移到有源区中，其中阻挡材料包括高Al含量的Al x 其中x + y = 1，x> = 0.50。 在一个具体方面，将AIN用作厚度为约5至约200埃的迁移/扩散阻挡层，以抑制镁和/或硅掺杂剂材料流入III族氮化物电子器件的有源区， 例如，UV LED光电器件。
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公开(公告)号：US06680489B1
公开(公告)日：2004-01-20
申请号：US09557165
申请日：2000-04-25
申请人： George R. Brandes , Chris S. Christos , Xueping Xu
发明人： George R. Brandes , Chris S. Christos , Xueping Xu
IPC分类号： H01L310312
CPC分类号： H01L28/20 , H01J1/3042 , H01J2201/30403 , H01J2201/319 , H01J2329/00 , H01L31/03765 , Y02E10/548
摘要： Amorphous silicon carbide thin film structures, including: protective coatings for windows in infrared process stream monitoring systems and sensor domes, heated windows, electromagnetic interference shielding members and integrated micromachined sensors; high-temperature sensors and circuits; and diffusion barrier layers in VLSI circuits. The amorphous silicon carbide thin film structures are readily formed, e.g., by sputtering at low temperatures.
摘要翻译： 无定形碳化硅薄膜结构，包括：红外线工艺流监测系统和传感器圆顶中的窗户保护涂层，加热窗，电磁干扰屏蔽构件和集成微机械传感器; 高温传感器和电路; 和VLSI电路中的扩散阻挡层。 非晶碳化硅薄膜结构容易形成，例如通过在低温下溅射。
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公开(公告)号：US06379210B2
公开(公告)日：2002-04-30
申请号：US09727023
申请日：2000-11-29
IPC分类号： H01J902
CPC分类号： H01J1/3042 , H01J2201/30426 , H01J2201/319 , H01J2329/00
摘要： A cathode structure suitable for a flat panel display is provided with coated emitters. The emitters are formed with material, typically nickel, capable of growing to a high aspect ratio. These emitters are then coated with carbon containing material for improving the chemical robustness and reducing the work function. One coating process is a DC plasma deposition process in which acetylene is pumped through a DC plasma reactor to create a DC plasma for coating the cathode structure. An alternative coating process is to electrically deposit raw carbon-based material onto the surface of the emitters, and subsequently reduce the raw carbon-based material to the carbon containing material. Work function of coated emitters is typically reduced by about 0.8 to 1.0 eV.
摘要翻译： 适用于平板显示器的阴极结构设置有涂覆的发射器。 发射体由能够生长到高纵横比的材料（通常为镍）形成。 然后，这些发射体涂覆有含碳材料，以改善化学稳定性并降低功函数。 一个涂覆工艺是DC等离子体沉积工艺，其中将乙炔泵送通过DC等离子体反应器以产生用于涂覆阴极结构的DC等离子体。 另一种涂覆方法是将原始碳基材料电沉积到发射体的表面上，随后将原始的碳基材料还原成含碳材料。 涂覆发射体的功函数通常降低约0.8至1.0eV。
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