公开(公告)号：US06447636B1

公开(公告)日：2002-09-10

申请号：US09505578

申请日：2000-02-16

申请人： Xue-Yu Qian ,  Zhi-Wen Sun ,  Maocheng Li ,  John Holland ,  Arthur H. Sato ,  Valentin N. Todorov ,  Patrick L. Leahey ,  Robert E. Ryan

发明人： Xue-Yu Qian ,  Zhi-Wen Sun ,  Maocheng Li ,  John Holland ,  Arthur H. Sato ,  Valentin N. Todorov ,  Patrick L. Leahey ,  Robert E. Ryan

IPC分类号： H05H100

CPC分类号： H01J37/32009 ,  H01J37/32082 ,  H01J37/3299 ,  H05H1/46

摘要： The invention provides a system and a method for dynamic RF inductive and capacitive coupling control to improve plasma substrate processing, as well as for achieving contamination and defect reduction. A plasma reactor includes a substrate support disposed in a chamber. An RF coil is disposed adjacent the chamber for inductively coupling RF energy into the chamber. An electrode is disposed adjacent the chamber and has a voltage for capacitively coupling energy into the chamber. The electrode is spaced from the substrate support and the RF coil. An electrode adjusting member is coupled with the electrode for dynamically adjusting the voltage in the electrode to vary the capacitive coupling for improved plasma ignition and plasma stability. A Faraday shield may be placed between the RF coil and the plasma process region in the chamber to suppress capacitive coupling of the RF coil. Sensors may be provided to monitor the amounts of inductive coupling and capacitive coupling to provide feedback to a controller which is used to adjust the inductive coupling and capacitive coupling in real time to stabilize the plasma and achieve improved processing.

摘要翻译： 本发明提供了用于动态RF感应和电容耦合控制以改善等离子体基板处理以及实现污染和缺陷减少的系统和方法。 等离子体反应器包括设置在室中的基板支撑件。 射频线圈邻近该腔室设置，用于将射频能量感应耦合到腔室中。 电极邻近该腔室设置并且具有用于将能量电容耦合到腔室中的电压。 电极与衬底支架和RF线圈间隔开。 电极调节构件与电极耦合以动态地调节电极中的电压，以改变电容耦合以改善等离子体点火和等离子体稳定性。 法拉第屏蔽可以放置在RF线圈和腔室中的等离子体处理区域之间，以抑制RF线圈的电容耦合。 可以提供传感器来监测电感耦合和电容耦合的量以向控制器提供反馈，该控制器用于实时调整电感耦合和电容耦合以稳定等离子体并实现改进的处理。

公开(公告)号：US20070079936A1

公开(公告)日：2007-04-12

申请号：US11445559

申请日：2006-06-02

申请人： Maocheng Li ,  John Holland ,  Patrick Leahey ,  Xueyu Qian ,  Michael Barnes ,  Jon Clinton ,  You Wang ,  Nianci Han

发明人： Maocheng Li ,  John Holland ,  Patrick Leahey ,  Xueyu Qian ,  Michael Barnes ,  Jon Clinton ,  You Wang ,  Nianci Han

IPC分类号： B31B1/60 ,  C23F1/00 ,  C23C16/00

CPC分类号： H01P1/08 ,  B32B2315/02 ,  C04B35/63452 ,  C04B37/003 ,  C04B37/005 ,  C04B37/008 ,  C04B2237/10 ,  C04B2237/34 ,  C04B2237/341 ,  C04B2237/343 ,  C04B2237/708 ,  H01J37/32082 ,  Y10T156/10

摘要： A bonded multi-layer RF window may include an external layer of dielectric material having desired thermal properties, an internal layer of dielectric material exposed to plasma inside a reaction chamber, and an intermediate layer of bonding material between the external layer and the internal layer. Heat produced by the chemical reaction inside the chamber and by the transmission of RF energy through the window may be conducted from the internal layer to the external layer, which may be cooled during a semiconductor wafer manufacturing process. A bonded multi-layer RF window may include cooling conduits for circulating coolant to facilitate cooling of the internal layer; additionally or alternatively, gas distribution conduits and gas injection apertures may be included for delivering one or more process gases into a reaction chamber. A system including a plasma reaction chamber may employ the inventive bonded multi-layer RF window.

摘要翻译： 键合的多层RF窗可以包括具有期望的热性质的外部介电材料层，暴露于反应室内的等离子体的介电材料的内部层，以及外层和内层之间的接合材料的中间层。 通过室内的化学反应和通过窗口的RF能量传递产生的热量可以从内层传导到外层，其可在半导体晶片制造过程中被冷却。 粘合的多层RF窗可以包括用于循环冷却剂以便于冷却内层的冷却管道; 另外或替代地，可以包括气体分配管道和气体注入孔，用于将一个或多个处理气体输送到反应室中。 包括等离子体反应室的系统可以采用本发明的结合的多层RF窗口。

公开(公告)号：US20060188742A1

公开(公告)日：2006-08-24

申请号：US11037587

申请日：2005-01-18

申请人： Brian West ,  Maocheng Li ,  Hong Wang

发明人： Brian West ,  Maocheng Li ,  Hong Wang

IPC分类号： B44C1/22 ,  B60J10/00 ,  C25F3/00 ,  B21C37/00 ,  B21H8/00

CPC分类号： C23C14/564 ,  H01J37/32458 ,  H01J2237/022 ,  Y10T428/12201

摘要： A substrate processing chamber component capable of being exposed to an energized gas in a process chamber has a component structure, and a surface on the structure with first and second spiral grooves, which can oppose one another. Process residues adhere to the surface during processing of a substrate in an energized gas to reduce contamination of the substrate.

摘要翻译： 能够在处理室中暴露于通电气体的基板处理室部件具有部件结构，并且具有可以彼此相对的第一和第二螺旋槽的结构上的表面。 在通电气体中的衬底处理期间，工艺残留物粘附到表面上，以减少衬底的污染。

公开(公告)号：US06827869B2

公开(公告)日：2004-12-07

申请号：US10194167

申请日：2002-07-11

申请人： Dragan Podlesnik ,  Thorsten Lill ,  Jeff Chinn ,  Shaoher X. Pan ,  Anisul Khan ,  Maocheng Li ,  Yiqiong Wang

发明人： Dragan Podlesnik ,  Thorsten Lill ,  Jeff Chinn ,  Shaoher X. Pan ,  Anisul Khan ,  Maocheng Li ,  Yiqiong Wang

IPC分类号： H01L21302

CPC分类号： H01L27/1087 ,  B81B2201/052 ,  B81B2203/0315 ,  B81B2203/033 ,  B81C1/00119 ,  B81C2201/016 ,  H01L21/3065 ,  H01L21/3086

摘要： The present disclosure pertains to our discovery of a particularly efficient method for etching a multi-part cavity in a substrate. The method provides for first etching a shaped opening, depositing a protective layer over at least a portion of the inner surface of the shaped opening, and then etching a shaped cavity directly beneath and in continuous communication with the shaped opening. The protective layer protects the etch profile of the shaped opening during etching of the shaped cavity, so that the shaped opening and the shaped cavity can be etched to have different shapes, if desired. In particular embodiments of the method of the invention, lateral etch barrier layers and/or implanted etch stops are also used to direct the etching process. The method of the invention can be applied to any application where it is necessary or desirable to provide a shaped opening and an underlying shaped cavity having varying shapes. The method is also useful whenever it is necessary to maintain tight control over the dimensions of the shaped opening.

摘要翻译： 本公开涉及我们发现用于蚀刻衬底中的多部分空腔的特别有效的方法。 该方法提供了首先蚀刻成形开口，在成形开口的内表面的至少一部分上沉积保护层，然后直接在成形开口下面蚀刻成形腔，并与成形开口连续连通。 保护层在蚀刻成形腔体期间保护成形开口的蚀刻轮廓，从而如果需要，成形开口和成形腔体可以被蚀刻以具有不同的形状。 在本发明方法的特定实施例中，横向蚀刻阻挡层和/或注入的蚀刻停止点也用于引导蚀刻工艺。 本发明的方法可以应用于需要或期望提供具有不同形状的成形开口和下面的成形腔的任何应用。 只要需要对成形开口的尺寸进行严格控制，该方法也是有用的。

公开(公告)号：US06380095B1

公开(公告)日：2002-04-30

申请号：US09716074

申请日：2000-11-16

申请人： Wei Liu ,  Yiqiong Wang ,  Maocheng Li ,  Anisul Khan ,  Shaoher Pan ,  Dragan Podlesnik

发明人： Wei Liu ,  Yiqiong Wang ,  Maocheng Li ,  Anisul Khan ,  Shaoher Pan ,  Dragan Podlesnik

IPC分类号： H01L21302

CPC分类号： H01L21/3065

摘要： The present invention pertains to an etch chemistry and method useful for the etching of silicon surfaces. The method is particularly useful in the deep trench etching of silicon where profile control is important. In the case of deep trench etching, at least a portion of the substrate toward the bottom of the trench is etched using a combination of reactive gases including a fluorine-containing compound which does not contain silicon (FC); a silicon-containing compound (SC) which does not contain fluorine; and oxygen (O2).

摘要翻译： 本发明涉及用于蚀刻硅表面的蚀刻化学和方法。 该方法在硅的深沟槽蚀刻中特别有用，其中轮廓控制是重要的。 在深沟槽蚀刻的情况下，使用包含不含硅（FC）的含氟化合物的反应性气体的组合来蚀刻朝向沟槽底部的至少一部分衬底; 不含氟的含硅化合物（SC）; 和氧气（O2）。

公开(公告)号：US6127278A

公开(公告)日：2000-10-03

申请号：US985771

申请日：1997-12-05

申请人： Yiqiong Wang ,  Maocheng Li ,  Shaoher Pan

发明人： Yiqiong Wang ,  Maocheng Li ,  Shaoher Pan

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/8242 ,  H01L27/108 ,  H01L21/00

CPC分类号： H01L21/3065

摘要： A multistep etch process for forming high aspect ratio trenches in silicon having a silicon oxide and/or silicon nitride hardmask. In a first step, an etch composition of HBr and oxygen is used, depositing a passivation layer on the sidewalls and producing slightly tapered openings. In the second step, an etch composition of a fluorine-containing gas such as SF.sub.6, HBr and oxygen is used, producing more vertical openings at a high etch rate. The taper of the openings during the second step can be controlled by adjusting the relative amount of HBr or SF.sub.6 employed. This process is a clean process that does not require cleaning of the etch chamber between etch steps.

摘要翻译： 用于在具有氧化硅和/或氮化硅硬掩模的硅中形成高纵横比沟槽的多级蚀刻工艺。 在第一步骤中，使用HBr和氧气的蚀刻组合物，在侧壁上沉积钝化层并产生稍微锥形的开口。 在第二步骤中，使用诸如SF 6，HBr和氧的含氟气体的蚀刻组合物，以高蚀刻速率产生更多的垂直开口。 可以通过调节使用的HBr或SF6的相对量来控制第二步骤期间的开口的锥度。 该工艺是一种清洁工艺，不需要在蚀刻步骤之间清洁蚀刻室。