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    Process and donor elements for transferring thermally sensitive materials to substrates by thermal imaging
    6.
    发明授权
    Process and donor elements for transferring thermally sensitive materials to substrates by thermal imaging 有权
    通过热成像将热敏材料转移到基板上的工艺和供体元件

    公开(公告)号：US07316874B2

    公开(公告)日：2008-01-08

    申请号：US10807363

    申请日：2004-03-23

    申请人： Graciela Beatriz Blanchet-Fincher

    发明人： Graciela Beatriz Blanchet-Fincher

    IPC分类号： G03C5/54 ,  G03F7/34

    CPC分类号： B41M5/42 ,  B41M5/41 ,  B41M5/44 ,  B41M5/465 ,  B41M2205/06 ,  B41M2205/12 ,  B41M2205/30 ,  B41M2205/38 ,  H01L51/0013 ,  H01L51/56 ,  H01L2251/5338 ,  Y10S430/146 ,  Y10S430/165

    摘要： Methods of forming a patterned semiconducting-dielectric material on a substrate by thermal processes are disclosed, comprising heating a thermally imageable donor element comprising a substrate and a transfer layer of semiconductive material in conjunction with a dielectric. The donor is exposed with the positive image of the desired pattern to be formed on the receiver, such that the exposed portions of the layer of semiconductive and dielectric material are simultaneously transferred, forming the desired pattern of semiconductive and dielectric material on the receiver. The semiconducting material can be patterned to form a thin film transistor. The method can also be used to pattern a light-emitting polymer or small molecule in conjunction with the charge injection layer to form the light-emitting display for light-sensitive organic electronic devices. Donor elements for use in the process are also disclosed. Methods for forming thin film transistors and donor elements for use in the processes, are also disclosed.

    摘要翻译： 公开了通过热过程在衬底上形成图案化的半导体介电材料的方法，包括加热包含衬底的可热成像的施主元件和与电介质结合的半导体材料的转移层。 供体以要形成在接收器上的期望图案的正像曝光，使得半导体和介电材料层的暴露部分同时转移，在接收器上形成期望的半导体和介电材料图案。 半导体材料可以被图案化以形成薄膜晶体管。 该方法还可以用于与电荷注入层结合形成发光聚合物或小分子，以形成光敏有机电子器件的发光显示器。 还公开了用于该方法的供体元件。 还公开了用于形成用于该方法的薄膜晶体管和施主元件的方法。