Real time alarm classification and method of use
    8.
    发明授权
    Real time alarm classification and method of use 失效
    实时报警分类及使用方法

    公开(公告)号:US07570174B2

    公开(公告)日:2009-08-04

    申请号:US11693162

    申请日:2007-03-29

    IPC分类号: G08B17/10

    CPC分类号: G05B23/0281

    摘要: A real time alarm classification system and method of use and, more particularly, to a residual gas analyzer configured to identify specific root causes of an abnormal condition such as, for example, contamination, undesirable process variability and equipment malfunction in wafer processing. The real-time alarm classification system comprises a computer infrastructure operable to: generate top contributors associated with an alarm triggered by sensed abnormal conditions; compare the top contributors to contributors of historic RGA (residual gas analyzer) alarms of known root causes that were generated by a validated model; and provide a probable root cause of the sensed abnormal conditions when a match is found between the top contributors and the contributors associated with the historic RGA alarms of known root causes. A method and computer readable medium is also contemplated to provide the processes.

    摘要翻译: 更具体地说,涉及一种残留气体分析器,该残留气体分析器被配置为识别晶片处理中诸如污染,不期望的过程变化性和设备故障等异常状况的特定根本原因。 所述实时报警分类系统包括:计算机基础设施,其可操作地:产生与由感测到的异常状况触发的报警相关联的最高贡献者; 比较由经验证的模型生成的已知根本原因的历史RGA(残留气体分析仪)报警的贡献者的主要贡献者; 并且当在顶级贡献者和与已知根本原因的历史RGA警报相关联的贡献者之间找到匹配时,提供感测到的异常状况的可能的根本原因。 还考虑了一种方法和计算机可读介质来提供这些过程。

    Structure and method for detecting defects in BEOL processing
    9.
    发明授权
    Structure and method for detecting defects in BEOL processing 失效
    用于检测BEOL处理缺陷的结构和方法

    公开(公告)号:US08623673B1

    公开(公告)日:2014-01-07

    申请号:US13572720

    申请日:2012-08-13

    IPC分类号: H01L21/66 H01L21/306

    CPC分类号: H01L22/34 H01L22/30

    摘要: A test structure and method for monitoring process uniformity. Embodiments of the invention include test structures having a first metallization layer, a second metallization layer formed above the first metallization layer, a defect-generating region in a first metallization layer, a defect-dispersing region in the second metallization layer above the defect-generating region; and a defect-detecting region in the second metallization layer adjacent to the defect-dispersing region. The defect-generating region of the exemplary embodiment may have zero pattern density, uniform non-zero pattern density, or non-uniform non-zero pattern density. The defect-detecting region may include a test pattern such as, a comb-serpentine structure. Embodiments may include more than one defect-generating region, more than one defect-dispersing region, or more than one defect-detecting region. Embodiments may further include methods of manufacturing said test structures and methods of utilizing said test structures to monitor back end processes and determine if such processes are within specification limits.

    摘要翻译: 一种用于监测过程均匀性的测试结构和方法。 本发明的实施例包括具有第一金属化层的第一金属化层,在第一金属化层上形成的第二金属化层,第一金属化层中的缺陷产生区,在产生缺陷的第二金属化层中的缺陷分散区的测试结构 地区; 以及与所述缺陷分散区域相邻的所述第二金属化层中的缺陷检测区域。 示例性实施例的缺陷产生区域可以具有零图案密度,均匀的非零图案密度或非均匀非零图案密度。 缺陷检测区域可以包括诸如梳状蛇形结构的测试图案。 实施例可以包括多于一个缺陷产生区域,多于一个缺陷分散区域或多于一个缺陷检测区域。 实施例还可以包括制造所述测试结构的方法以及利用所述测试结构来监测后端处理并确定这些过程是否在规定范围内的方法。

    Novel Integration Process to Improve Focus Leveling Within a Lot Process Variation
    10.
    发明申请
    Novel Integration Process to Improve Focus Leveling Within a Lot Process Variation 有权
    新的集成过程,以提高在一个批次过程变化中的焦点调平

    公开(公告)号:US20120112302A1

    公开(公告)日:2012-05-10

    申请号:US12941375

    申请日:2010-11-08

    IPC分类号: H01L31/0232

    摘要: A method of improving the focus leveling response of a semiconductor wafer is described. The method includes combining organic and inorganic or metallic near infrared (NIR) hardmask on a semiconductor substrate; forming an anti-reflective coating (ARC) layer on the combined organic NIR-absorption and the inorganic or metallic NIR-absorption hardmask; and forming a photoresist layer on the ARC layer. A semiconductor structure is also described including a substrate, a resist layer located over the structure; and an absorptive layer located over the substrate. The absorptive layer includes an inorganic or metallic NIR-absorbing hardmask layer.

    摘要翻译: 描述了改善半导体晶片的聚焦调平响应的方法。 该方法包括在半导体衬底上组合有机和无机或金属近红外(NIR)硬掩模; 在组合的有机NIR吸收和无机或金属NIR吸收硬掩模上形成抗反射涂层(ARC)层; 以及在所述ARC层上形成光致抗蚀剂层。 还描述了半导体结构,其包括基板,位于结构上方的抗蚀剂层; 以及位于衬底上方的吸收层。 吸收层包括无机或金属NIR吸收硬掩模层。