公开(公告)号：US20130092950A1

公开(公告)日：2013-04-18

申请号：US13615421

申请日：2012-09-13

申请人： Hajime FUJIKURA ,  Michiko Matsuda ,  Taichiroo Konno

发明人： Hajime FUJIKURA ,  Michiko Matsuda ,  Taichiroo Konno

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： C30B25/186 ,  C30B29/403 ,  H01L33/007 ,  H01L33/02

摘要： A nitride semiconductor growth substrate includes a principal surface including a C-plane of a sapphire substrate, and a convex portion that is formed on the principal surface, has a cone or pyramid shape or a truncated cone or pyramid shape, is disposed to form a lattice pattern in a top view thereof, and includes a side surface inclined at an angle of less than 90 degrees relative to the principal surface. The convex portion has a height of 0.5 to 3 μm from the principal surface. A distance between adjacent ones of the convex portion is 1 to 6 μm. The side surface of the convex portion has a surface roughness (RMS) of not more than 10 nm.

摘要翻译： 氮化物半导体生长衬底包括包括蓝宝石衬底的C面的主表面和形成在主表面上的具有锥形或棱锥形或截锥形或棱锥形状的凸部，以形成 并且包括相对于主表面以小于90度的角度倾斜的侧表面。 凸部的主面的高度为0.5〜3μm。 相邻的凸部之间的距离为1〜6μm。 凸部的侧面的表面粗糙度（RMS）为10nm以下。

公开(公告)号：US09236252B2

公开(公告)日：2016-01-12

申请号：US13569983

申请日：2012-08-08

申请人： Taichiroo Konno ,  Hajime Fujikura ,  Michiko Matsuda

发明人： Taichiroo Konno ,  Hajime Fujikura ,  Michiko Matsuda

IPC分类号： C30B25/08 ,  H01L21/02 ,  C30B25/14 ,  C30B29/40

CPC分类号： H01L21/0262 ,  C30B25/08 ,  C30B25/14 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02581 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/36

摘要： A metal chloride gas generator includes: a tube reactor including a receiving section for receiving a metal on an upstream side, and a growing section in which a growth substrate is placed on a downstream side; a gas inlet pipe arranged to extend from an upstream end with a gas inlet via the receiving section to the growing section, for introducing a gas from the upstream end to supply the gas to the receiving section, and supplying a metal chloride gas produced by a reaction between the gas and the metal in the receiving section to the growing section; and a heat shield plate placed in the reactor to thermally shield the upstream end from the growing section. The gas inlet pipe is bent between the upstream end and the heat shield plate.

摘要翻译： 金属氯化物气体发生器包括：管式反应器，包括用于在上游侧接收金属的接收部分和生长基底放置在下游侧的生长部分; 气体入口管，其布置成从具有通过接收部的气体入口的上游端延伸到生长部分，用于从上游端引入气体以将气体供应到接收部分，并且供应由 接收部分中的气体和金属与生长部分之间的反应; 以及放置在反应器中以将上游端与生长部分进行热屏蔽的隔热板。 进气管在上游端和隔热板之间弯曲。

公开(公告)号：US09105755B2

公开(公告)日：2015-08-11

申请号：US13524300

申请日：2012-06-15

申请人： Hajime Fujikura ,  Taichiroo Konno ,  Michiko Matsuda

发明人： Hajime Fujikura ,  Taichiroo Konno ,  Michiko Matsuda

IPC分类号： H01L21/02 ,  H01L29/872 ,  H01L29/66 ,  H01L33/00 ,  H01L33/12 ,  H01L33/32 ,  H01L29/20

CPC分类号： H01L29/872 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66212 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32

摘要： There is provided a nitride semiconductor epitaxial substrate having a group III nitride semiconductor layer with C-plane as a surface, grown on a substrate via a buffer layer of the group III nitride semiconductor containing Al, wherein the buffer layer has an inversion domain on the surface.

摘要翻译： 提供了具有C面作为表面的III族氮化物半导体层的氮化物半导体外延衬底，其经由包含Al的III族氮化物半导体的缓冲层在衬底上生长，其中缓冲层在其上具有反转畴 表面。

公开(公告)号：US08786052B2

公开(公告)日：2014-07-22

申请号：US13610496

申请日：2012-09-11

申请人： Hajime Fujikura ,  Taichiroo Konno ,  Yuichi Oshima

发明人： Hajime Fujikura ,  Taichiroo Konno ,  Yuichi Oshima

IPC分类号： H01L29/20 ,  H01L29/04

CPC分类号： C30B25/02 ,  C30B25/14 ,  C30B25/16 ,  C30B25/165 ,  C30B29/406 ,  H01L29/2003

摘要： A nitride semiconductor crystal producing method, a nitride semiconductor epitaxial wafer, and a nitride semiconductor freestanding substrate, by which it is possible to suppress the occurrence of cracking in the nitride semiconductor crystal and to ensure the enhancement of the yield of the nitride semiconductor crystal. The nitride semiconductor crystal producing method includes growing a nitride semiconductor crystal over a seed crystal substrate, while applying an etching action to an outer end of the seed crystal substrate during the growing of the nitride semiconductor crystal.

摘要翻译： 氮化物半导体晶体制造方法，氮化物半导体外延晶片和氮化物半导体独立基板，可以抑制氮化物半导体晶体中的裂纹的发生，并且确保提高氮化物半导体晶体的产率。 氮化物半导体晶体制造方法包括在氮化物半导体晶体生长期间，在晶种基板上生长氮化物半导体晶体，同时在晶种基板的外端施加蚀刻作用。

公开(公告)号：US20130069075A1

公开(公告)日：2013-03-21

申请号：US13610496

申请日：2012-09-11

申请人： Hajime Fujikura ,  Taichiroo Konno ,  Yuichi Oshima

发明人： Hajime Fujikura ,  Taichiroo Konno ,  Yuichi Oshima

IPC分类号： C30B25/16 ,  C30B25/14 ,  H01L29/20

CPC分类号： C30B25/02 ,  C30B25/14 ,  C30B25/16 ,  C30B25/165 ,  C30B29/406 ,  H01L29/2003

摘要： A nitride semiconductor crystal producing method, a nitride semiconductor epitaxial wafer, and a nitride semiconductor freestanding substrate, by which it is possible to suppress the occurrence of cracking in the nitride semiconductor crystal and to ensure the enhancement of the yield of the nitride semiconductor crystal. The nitride semiconductor crystal producing method includes growing a nitride semiconductor crystal over a seed crystal substrate, while applying an etching action to an outer end of the seed crystal substrate during the growing of the nitride semiconductor crystal.

摘要翻译： 氮化物半导体晶体制造方法，氮化物半导体外延晶片和氮化物半导体独立基板，可以抑制氮化物半导体晶体中的裂纹的发生，并且确保提高氮化物半导体晶体的产率。 氮化物半导体晶体制造方法包括在氮化物半导体晶体生长期间，在晶种基板上生长氮化物半导体晶体，同时在晶种基板的外端施加蚀刻作用。

公开(公告)号：US08664663B2

公开(公告)日：2014-03-04

申请号：US13571535

申请日：2012-08-10

申请人： Taichiroo Konno ,  Hajime Fujikura

发明人： Taichiroo Konno ,  Hajime Fujikura

IPC分类号： H01L29/15

CPC分类号： H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02576 ,  H01L33/007 ,  H01L33/12 ,  H01L33/20

摘要： A nitride semiconductor template includes a substrate, and a group III nitride semiconductor layer having an oxygen-doped layer formed on the substrate, and a silicon-doped layer formed on the oxygen-doped layer. A total thickness of the group III nitride semiconductor layer is not smaller than 4 μm and not greater than 10 μm, and an average silicon carrier concentration in the silicon-doped layer is not lower than 1×1018 cm−3 and not higher than 5×1018 cm−3.

摘要翻译： 氮化物半导体模板包括衬底和在衬底上形成有氧掺杂层的III族氮化物半导体层和形成在氧掺杂层上的硅掺杂层。 III族氮化物半导体层的总厚度不小于4μm并且不大于10μm，并且掺硅层中的平均硅载流子浓度不低于1×1018cm-3且不高于5 ×1018厘米-3。

公开(公告)号：US07723731B2

公开(公告)日：2010-05-25

申请号：US11907895

申请日：2007-10-18

申请人： Taichiroo Konno ,  Takashi Furuya

发明人： Taichiroo Konno ,  Takashi Furuya

IPC分类号： H01L33/00

CPC分类号： H01L33/14 ,  H01L33/0079 ,  H01L33/02 ,  H01L33/30 ,  H01L33/405

摘要： A first conductivity type cladding layer 2, a first side multilayer 9, an active layer 4, a second side multilayer 10, and a second conductivity type cladding layer 3 are provided in a semiconductor light emitting device. The first side multilayer 9 is provided between the first conductivity type cladding layer 2 and the active layer 4, and the second side multilayer 10 is provided between the active layer 4 and the second conductivity type cladding layer 3. Each of the multilayer 9, 10 is transparent with respect to the light generated at the active layer 4, having a bandgap larger than that of the active layer 4, and lattice-matched with the active layer 4.

摘要翻译： 在半导体发光器件中设置第一导电型包层2，第一侧多层9，有源层4，第二侧多层10和第二导电型包覆层3。 在第一导电型包覆层2和有源层4之间设置第一侧面叠层体9，在有源层4和第二导电型覆盖层3之间设置第二侧面层叠体10。 相对于在有源层4处产生的光具有比有源层4的带隙更大的透光性，并且与有源层4晶格匹配。

公开(公告)号：US07675072B2

公开(公告)日：2010-03-09

申请号：US11955063

申请日：2007-12-12

申请人： Taichiroo Konno ,  Masahiro Arai

发明人： Taichiroo Konno ,  Masahiro Arai

IPC分类号： H01L27/15

CPC分类号： H01L33/42 ,  H01L33/02

摘要： In a light emitting diode, a light-emitting region is including an active layer provided between a first conductivity type cladding layer formed on the semiconductor substrate and a second conductivity type cladding layer. A transparent conductive film made of a metal oxide is located over the light-emitting region. A layer for preventing exfoliation of the transparent conductive film, the preventing layer being made of a compound semiconductor contains at least aluminum and is located between the light-emitting region and the transparent conductive film. The layer for preventing exfoliation of the transparent conductive film contains a conductivity type determining impurity in a concentration of 1×1019 cm−3 or higher.

摘要翻译： 在发光二极管中，发光区域包括设置在形成在半导体衬底上的第一导电型包覆层和第二导电型包覆层之间的有源层。 由金属氧化物构成的透明导电膜位于发光区域的上方。 作为防止透明导电膜脱落的层，由化合物半导体形成的防止层至少含有铝，位于发光区域和透明导电膜之间。 用于防止透明导电膜剥离的层含有1×10 19 cm -3以上的浓度的导电型确定性杂质。

公开(公告)号：US07368759B2

公开(公告)日：2008-05-06

申请号：US11485420

申请日：2006-07-13

申请人： Masahiro Arai ,  Taichiroo Konno ,  Kazuyuki Iizuka ,  Katsuya Akimoto

发明人： Masahiro Arai ,  Taichiroo Konno ,  Kazuyuki Iizuka ,  Katsuya Akimoto

IPC分类号： H01L33/00

CPC分类号： H01L33/14 ,  H01L33/30

摘要： A semiconductor light emitting device has a light-emitting portion formed on a semiconductor substrate, an As-based p-type contact layer formed thereon, a current spreading layer formed thereon of a metal oxide material, and a buffer layer formed between the p-type cladding layer and the p-type contact layer. The buffer layer has a group III/V semiconductor with a p-type conductivity and hydrogen or carbon included intentionally or unavoidably therein, and the buffer layer has a thickness equal to or greater than a diffusion length L of a dopant doped into the p-type contact layer.

摘要翻译： 半导体发光器件具有形成在半导体衬底上的发光部分，形成在其上的As型p型接触层，在其上形成金属氧化物材料的电流扩散层，以及形成在p型接触层之间的缓冲层， 型包覆层和p型接触层。 缓冲层具有p型导电性的III / V族半导体，有意或不可避免地含有氢或碳，缓冲层的厚度等于或大于掺杂到p型导电体中的掺杂剂的扩散长度L， 型接触层。

公开(公告)号：US20070075319A1

公开(公告)日：2007-04-05

申请号：US11485316

申请日：2006-07-13

申请人： Taichiroo Konno ,  Kazuyuki Iizuka ,  Masahiro Arai

发明人： Taichiroo Konno ,  Kazuyuki Iizuka ,  Masahiro Arai

IPC分类号： H01L33/00

CPC分类号： H01L33/14 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02546 ,  H01L33/02 ,  H01L33/025

摘要： A semiconductor light-emitting device with a transparent conductive film has: a light-emitting portion formed on a semiconductor substrate, the light-emitting portion having an n-type clad layer, an active layer and a p-type clad layer; an As-based contact layer formed on the light-emitting portion, the contact layer being doped with a p-type dopant of 1×1019/cm3 or more; a current spreading layer formed on the contact layer, the current spreading layer being formed of a transparent conductive film made of a metal oxide material; and a buffer layer formed between the contact layer and the p-type clad layer. The buffer layer has two or more buffer layer parts, and the adjacent buffer layer parts are different each other in material or composition.

摘要翻译： 具有透明导电膜的半导体发光器件具有形成在半导体衬底上的发光部分，所述发光部分具有n型覆盖层，有源层和p型覆盖层; 形成在发光部分上的基于As的接触层，所述接触层掺杂有1×10 19 / cm 3以上的p型掺杂物; 形成在所述接触层上的电流扩展层，所述电流扩散层由由金属氧化物材料制成的透明导电膜形成; 以及形成在所述接触层和所述p型覆盖层之间的缓冲层。 缓冲层具有两个以上的缓冲层部分，相邻的缓冲层部分在材料或组成上彼此不同。