公开(公告)号：US20050034665A1

公开(公告)日：2005-02-17

申请号：US10948342

申请日：2004-09-24

申请人： Takaharu Kondo ,  Masafumi Sano ,  Koichi Matsuda ,  Makoto Higashikawa

发明人： Takaharu Kondo ,  Masafumi Sano ,  Koichi Matsuda ,  Makoto Higashikawa

IPC分类号： C23C16/24 ,  C23C16/509 ,  C23C16/54 ,  C30B25/10 ,  H01L21/205 ,  H01L31/0376 ,  H01L31/04 ,  H01L31/18 ,  C23C16/00

CPC分类号： C23C16/24 ,  C23C16/5096 ,  C23C16/545 ,  C30B25/105 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/0376 ,  H01L31/1824 ,  Y02E10/545 ,  Y02P70/521

摘要： A film, typically a silicon-based film, is formed on a substrate by means of a plasma CVD process using a high frequency wave in a condition where a resistance element made of a different material than that of the substrate is provided on the electric path between the substrate and the earth. The resultant film shows a high quality and an improved adhesion strength while it can be formed at a practically high rate.

摘要翻译： 通过使用高频波的等离子体CVD工艺在基板上形成膜，通常为硅基膜，在电路上设置由与基板不同的材料制成的电阻元件 在基底和地球之间。 所得到的膜可以以实际高的速率形成，并且显示出高质量和改善的粘合强度。

公开(公告)号：US06803080B2

公开(公告)日：2004-10-12

申请号：US10231308

申请日：2002-08-30

申请人： Takaharu Kondo ,  Masafumi Sano ,  Koichi Matsuda ,  Makoto Higashikawa

发明人： Takaharu Kondo ,  Masafumi Sano ,  Koichi Matsuda ,  Makoto Higashikawa

IPC分类号： H05H102

CPC分类号： C23C16/24 ,  C23C16/5096 ,  C23C16/545 ,  C30B25/105 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/0376 ,  H01L31/1824 ,  Y02E10/545 ,  Y02P70/521

摘要： A film, typically a silicon-based film, is formed on a substrate by means of a plasma CVD process using a high frequency wave in a condition where a resistance element made of a different material than that of the substrate is provided on the electric path between the substrate and the earth. The resultant film shows a high quality and an improved adhesion strength while it can be formed at a practically high rate.

摘要翻译： 通过使用高频波的等离子体CVD工艺在基板上形成膜，通常为硅基膜，在电路上设置由与基板不同的材料制成的电阻元件 在基底和地球之间。 所得到的膜可以以实际高的速率形成，并且显示出高质量和改善的粘合强度。

公开(公告)号：US06472248B2

公开(公告)日：2002-10-29

申请号：US09758345

申请日：2001-01-12

申请人： Atsushi Shiozaki ,  Masafumi Sano ,  Toshimitsu Kariya ,  Takaharu Kondo ,  Makoto Higashikawa ,  Koichi Matsuda

发明人： Atsushi Shiozaki ,  Masafumi Sano ,  Toshimitsu Kariya ,  Takaharu Kondo ,  Makoto Higashikawa ,  Koichi Matsuda

IPC分类号： H01L2100

CPC分类号： H01L31/03685 ,  H01L21/0237 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02675 ,  H01L31/028 ,  H01L31/03926 ,  H01L31/048 ,  H01L31/075 ,  H01L31/076 ,  H01L31/1824 ,  H01L31/1872 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A photovoltaic element having a stacked structure comprising a first semiconductor layer containing no crystalline phase, a second semiconductor layer containing approximately spherical microcrystalline phases, and a third semiconductor layer containing pillar microcrystalline phases which are stacked in this order, wherein said spherical microcrystalline phases of said second semiconductor layer on the side of said third semiconductor layer have an average size which is greater than that of said spherical microcrystalline phases of said second semiconductor layer on the side of said first semiconductor layer.

摘要翻译： 一种具有叠层结构的光电元件，包括不含结晶相的第一半导体层，含有近似球形微晶相的第二半导体层，以及包含柱状微晶相的第三半导体层，该第三半导体层依次层叠，其中所述 所述第三半导体层侧的第二半导体层的平均尺寸大于所述第二半导体层在所述第一半导体层一侧的所述球形微晶相的平均尺寸。

公开(公告)号：US06706336B2

公开(公告)日：2004-03-16

申请号：US10055974

申请日：2002-01-28

申请人： Takaharu Kondo ,  Masafumi Sano ,  Koichi Matsuda ,  Makoto Higashikawa

发明人： Takaharu Kondo ,  Masafumi Sano ,  Koichi Matsuda ,  Makoto Higashikawa

IPC分类号： C23C1624

CPC分类号： H01J37/32467 ,  C23C16/24 ,  C23C16/4404 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/182 ,  H01L31/202 ,  Y02E10/546 ,  Y02P70/521

摘要： A silicon-based film of excellent photoelectric characteristics can be obtained by introducing a source gas containing silicon halide and hydrogen into the interior of a vacuum vessel, at least a part of the interior being covered with a silicon-containing solid, generating plasma in the space of the interior of the vacuum vessel, and forming a silicon-based film on a substrate provided in the interior of the vacuum vessel.

摘要翻译： 通过将含有卤化硅和氢气的源气体引入真空容器的内部可以获得优异的光电特性的硅基膜，至少一部分内部被含硅固体覆盖，在 真空容器内部的空间，并且在设置在真空容器内部的基板上形成硅基膜。

公开(公告)号：US06812499B2

公开(公告)日：2004-11-02

申请号：US09982845

申请日：2001-10-22

申请人： Takaharu Kondo ,  Makoto Higashikawa ,  Masafumi Sano ,  Koichi Matsuda

发明人： Takaharu Kondo ,  Makoto Higashikawa ,  Masafumi Sano ,  Koichi Matsuda

IPC分类号： H01L3300

CPC分类号： H01L31/075 ,  H01L31/03682 ,  H01L31/03767 ,  H01L31/076 ,  H01L31/1804 ,  Y02E10/546 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A silicon based film is provided which comprises a crystal phase formed on a substrate with a surface shape represented by a function f, wherein the silicon-based film is formed on a substrate with a surface shape having a standard deviation of an inclination arctan (df/dx) from 15° to 55° within the range of a sampling length dx from 20 nm to 100 nm. Raman scattering strength resulting from an amorphous component in the silicon-based film is not more than a Raman scattering strength resulting from a crystalline component. A difference between a spacing in a direction parallel to a principal surface of the substrate and a spacing of a single crystal silicon is within the range of 0.2% to 1.0% with regard to the spacing of the single crystal silicon.

摘要翻译： 提供了一种硅基膜，其包括形成在具有由功能f表示的表面形状的基板上的晶相，其中所述硅基膜形成在具有倾斜度的标准偏差（df）的表面形状的基板上 / dx）在20nm至100nm的采样长度dx的范围内从15°至55°。 由硅基膜中的无定形成分产生的拉曼散射强度不大于由结晶成分产生的拉曼散射强度。 相对于单晶硅的间隔，平行于基板的主面的方向的间隔和单晶硅的间隔之间的差在0.2％〜1.0％的范围内。

公开(公告)号：US06706335B2

公开(公告)日：2004-03-16

申请号：US09865549

申请日：2001-05-29

申请人： Takaharu Kondo ,  Koichi Matsuda ,  Makoto Higashikawa

发明人： Takaharu Kondo ,  Koichi Matsuda ,  Makoto Higashikawa

IPC分类号： H05H102

CPC分类号： H01L31/202 ,  C23C16/24 ,  C23C16/509 ,  C30B25/105 ,  C30B29/06 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/03767 ,  H01L31/1824 ,  Y02E10/545 ,  Y02P70/521

摘要： In a high frequency plasma CVD using a source gas comprising a silicon halide and hydrogen, the value of Q defined by Q=Po×PR/S/d is controlled so as to be 50 or more, wherein Po (W) is a supplied power, S (cm2) is the area of a high frequency introducing electrode, d (cm) is a distance between the high frequency introducing electrode and a substrate, and PR (mTorr) is a pressure. Thereby, a method of forming a silicon thin film, a silicon thin film and a photovoltaic element excellent in photoelectric characteristics are provided which attain a film forming rate of an industrially practical level.

摘要翻译： 在使用包含硅卤化物和氢的源气体的高频等离子体CVD中，由Q = PoxPR / S / d定义的Q值为50以上，其中Po（W）为供电电力， S（cm 2）是高频引入电极的面积，d（cm）是高频引入电极和衬底之间的距离，PR（mTorr）是压力。 因此，提供了一种形成硅薄膜，硅薄膜和光电特性优异的光电元件的方法，其获得了工业实用水平的成膜速率。

公开(公告)号：US20050189012A1

公开(公告)日：2005-09-01

申请号：US10693914

申请日：2003-10-28

申请人： Takaharu Kondo ,  Noboru Toyama ,  Ryo Hayashi ,  Yuichi Sonoda ,  Tomonori Nishimoto ,  Satoru Yamada ,  Makoto Higashikawa ,  Masumitsu Iwata ,  Yusuke Miyamoto

发明人： Takaharu Kondo ,  Noboru Toyama ,  Ryo Hayashi ,  Yuichi Sonoda ,  Tomonori Nishimoto ,  Satoru Yamada ,  Makoto Higashikawa ,  Masumitsu Iwata ,  Yusuke Miyamoto

IPC分类号： C23C14/08 ,  C23C28/04 ,  C25D9/04 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/0392 ,  H01L31/18 ,  H01L31/00

CPC分类号： H01L31/0392 ,  C23C14/086 ,  C23C28/044 ,  C23C28/30 ,  C23C28/323 ,  C23C28/324 ,  C23C28/345 ,  C25D9/04 ,  H01L31/022425 ,  H01L31/03529 ,  H01L31/03921 ,  H01L31/18 ,  Y02E10/50

摘要： In a zinc oxide film having a plurality of texture constituents comprised of hills each having structure wherein a first surface borders on a second surface along one curved line, texture constituents in which first surfaces the hills of the texture constituents have have an average angle of inclination in a size within the range of from 30 degrees or more to 60 degrees or less and second surfaces have an average angle of inclination in a size within the range of from 10 degrees or more to 35 degrees or less account for at least a half of the plurality of texture constituents. This enables improvement in characteristics and durability of zinc oxide films used as optical confinement layers in photovoltaic devices, and also enables formation thereof at a low cost.

摘要翻译： 在具有多个纹理构成的氧化锌膜中，每个纹理组成由具有结构的山丘构成，其中第一表面沿着一个曲线边界在第二表面上，其中纹理成分的第一表面纹理成分的山丘具有平均倾角 尺寸在30度以上至60度以下的范围内，第二表面具有在10度以上至35度以下的尺寸的平均倾斜角，占至少一半以上 多个纹理成分。 这使得能够改善用作光电器件中的光限制层的氧化锌膜的特性和耐久性，并且还能够以低成本形成。

公开(公告)号：US6132817A

公开(公告)日：2000-10-17

申请号：US822607

申请日：1997-03-19

申请人： Nobuo Tokutake ,  Masafumi Sano ,  Ryo Hayashi ,  Makoto Higashikawa

发明人： Nobuo Tokutake ,  Masafumi Sano ,  Ryo Hayashi ,  Makoto Higashikawa

IPC分类号： H01L31/04 ,  H01L21/304 ,  H01L31/0392 ,  H01L31/052 ,  H01L31/076 ,  H01L31/20 ,  B05D3/10 ,  H05H1/24

CPC分类号： H01L31/076 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521

摘要： A method of manufacturing a photoelectric transducer forms a functional film on a conductive substrate. The method comprises applying ultrasonic cleaning with a cleaning liquid containing water to the conductive substrate, then allowing the surface of the conductive substrate to contact purified water so as to import uniform oxidation and then forming the functional film thereon. The functional film is characterized in being formed with a metal layer as light-reflecting layer, a reflection enhancing layer, and a semiconductor photovoltaic device layer, prepared by a plasma CVD method, comprising a non-monocrystalline material containing silicon atoms as the matrix.

摘要翻译： 光电转换器的制造方法在导电性基板上形成功能膜。 该方法包括将超声波清洗用含有水的清洗液施加到导电性基材上，然后使导电性基材的表面与净化水接触，进行均匀氧化，然后在其上形成功能膜。 功能膜的特征在于，通过等离子体CVD法制备的金属层作为光反射层，反射增强层和半导体光电器件层，其包含含有硅原子作为基体的非单晶材料。

公开(公告)号：US06645573B2

公开(公告)日：2003-11-11

申请号：US09261499

申请日：1999-03-03

申请人： Makoto Higashikawa ,  Masafumi Sano

发明人： Makoto Higashikawa ,  Masafumi Sano

IPC分类号： H05H124

CPC分类号： C23C16/545 ,  C23C16/24 ,  C23C16/509

摘要： A process for forming a microcrystalline silicon series thin film by arranging a long substrate in a vacuum chamber so as to oppose an electrode provided in the vacuum chamber and while transporting the long substrate in a longitudinal direction, causing glow discharge between the electrode and the long substrate to deposit the microcrystalline silicon series thin film on the long substrate, wherein a plurality of bar-like shaped electrodes as the electrode are arranged such that they are perpendicular to a normal line of the long substrate and their intervals to the long substrate are all or partially different. The glow discharge is caused using a high frequency power with an oscillation frequency in a range of from 50 MHz to 550 MHz, whereby depositing the microcrystalline series thin film on the long substrate. An apparatus suitable for practicing the process is included.

摘要翻译： 一种微晶硅系列薄膜的制造方法，其特征在于，在真空室内配置长衬底以与设在真空室中的电极相对，并且沿长度方向输送长衬底，从而在电极与长电极之间产生辉光放电 衬底以将微晶硅系列薄膜沉积在长衬底上，其中多个作为电极的棒状电极被布置成使得它们垂直于长衬底的法线，并且它们与长衬底的间隔全部 或部分不同。 使用振荡频率在50MHz〜550MHz范围内的高频功率引起辉光放电，由此将微晶系列薄膜沉积在长基板上。 包括适用于实施该过程的装置。

公开(公告)号：US07897868B2

公开(公告)日：2011-03-01

申请号：US10807103

申请日：2004-03-24

申请人： Koichi Matsuda ,  Makoto Higashikawa ,  Tetsuro Nakamura

发明人： Koichi Matsuda ,  Makoto Higashikawa ,  Tetsuro Nakamura

IPC分类号： H01L31/0392 ,  H01L31/0376

CPC分类号： H01L31/0687 ,  H01L31/046 ,  H01L31/0549 ,  H01L31/076 ,  H01L31/1824 ,  H01L31/202 ,  Y02E10/52 ,  Y02E10/544 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： A stacked photovoltaic element comprising a plurality of unit photovoltaic elements each composed of a pn- or pin-junction, connected to each other in series, wherein a zinc oxide layer is provided at least one position between the unit photovoltaic elements, and the zinc oxide layer has resitivity varying in the thickness direction.

摘要翻译： 一种堆叠的光伏元件，包括多个单元光电元件，每个单元光伏元件各自由pn或pin-junction组成，彼此串联连接，其中氧化锌层设置在单元光电元件和氧化锌之间的至少一个位置 层具有在厚度方向上变化的电位。