摘要:
A laser arrangement comprises an optically pumped laser (2) and at least one semiconductor laser (1) which emits pump radiation (6) for pumping the optically pumped laser (2). The semiconductor laser (1) contains a plurality of monolithically integrated active zones (3, 4, 5) arranged one above another, at least two of the plurality of active zones (3, 4, 5) emitting pump radiation (6) of different wavelengths. In this way, it is possible to pump different absorption bands of the optically pumped laser (2) using a single semiconductor laser (1).
摘要:
A semiconductor laser comprising a laser-active layer sequence (1) having a first main face (1003), on which is arranged a heat conducting layer (3) containing carbon nanotubes (30) and a method for producing such a semiconductor laser.
摘要:
A method for producing an organic electronic component comprises, in particular, the following steps: A) producing at least one functional layer stack (10) with the following substeps: A1) providing a flexible first substrate (1), A2) applying at least one organic layer (2) in large-area fashion on the first substrate (1) by means of a coil coating plant (90), and A3) singulating the first substrate (1) with the at least one organic layer (2) into a plurality of functional layer stacks (10); B) providing a second substrate (5), which has a lower flexibility and a higher impermeability with respect to moisture and oxygen than the first substrate (1); and C) applying the at least one of the plurality of the functional layer stacks (10) with a surface (11) of the first substrate (1) remote from the organic layer (2) on the second substrate (5).
摘要:
An edge emitting semiconductor laser containing a plurality of monolithically integrated laser diodes (1, 2, 3). Each laser diode (1, 2, 3) contains an active zone (11, 12, 13), with the active zones (11, 12, 13) being in each case arranged between waveguide layers (6), the waveguide layers (6) in each case adjoining a cladding layer (7, 8) at a side remote from the active zone (11, 12, 13). The cladding layers (7, 8) comprise inner cladding layers (7), which are arranged above a bottommost active zone (11) and below a topmost active zone (13), and outer cladding layers (8) which are arranged below the bottommost active zone (11) or above the topmost active zone (13). The inner cladding layers (7) have a smaller thickness than the outer cladding layers (8).
摘要:
A surface emitting semiconductor component (1) with an emission direction which comprises a semiconductor body (2). The semiconductor body comprises a plurality of active regions (4a, 4b) which are suitable for the generation of radiation and are arranged in a manner spaced apart from one another, a frequency-selective element (6) being formed in the semiconductor body.
摘要:
Optoelectronic organic component, comprising: a first electrode, a first planarization layer which is disposed on the first electrode, a first injection layer which is disposed on the planarization layer, an organic functional layer which is disposed on the injection layer, a second electrode which is disposed on the organic functional layer, wherein in the case that the first electrode is an anode, the following applies for the energy levels: EF-EHOMO,Inj.≦EF-EHOMO,Plan. and EF-EHOMO,Inj.
摘要:
An edge emitting semiconductor laser containing a plurality of monolithically integrated laser diodes (1, 2, 3). Each laser diode (1, 2, 3) contains an active zone (11, 12, 13), with the active zones (11, 12, 13) being in each case arranged between waveguide layers (6), the waveguide layers (6) in each case adjoining a cladding layer (7, 8) at a side remote from the active zone (11, 12, 13). The cladding layers (7, 8) comprise inner cladding layers (7), which are arranged above a bottommost active zone (11) and below a topmost active zone (13), and outer cladding layers (8) which are arranged below the bottommost active zone (11) or above the topmost active zone (13). The inner cladding layers (7) have a smaller thickness than the outer cladding layers (8).
摘要:
A radiation-emitting semiconductor component comprising a semiconductor body (3) with a first active zone (1) and a second active zone (2) arranged above the first active zone, the first active zone being provided for generating a radiation having a first wavelength λ1 (11) and the second active zone being provided for generating a radiation having a second wavelength λ2 (22), the radiation having the first wavelength λ1 being coherent and the radiation having the second wavelength λ2 being incoherent.
摘要:
A device comprising: a first substrate (1); a second substrate; at least one optoelectronic component (4) containing at least one organic material is arranged on the first substrate; the first substrate (1) and the second substrate (2) being arranged relative to one another in such a way that the optoelectronic component (4) is arranged between the first substrate (1) and the second substrate; a bonding material (3) is arranged between the first substrate (1) and the second substrate (2), said bonding material enclosing the optoelectronic component (4) in a frame type fashion and mechanically connecting the first and second substrates (1, 2) to one another; and wherein the bonding material (3) was softened by an exothermic chemical process of a reactive material (7) for mechanically connecting the substrates (1, 2).
摘要:
An arrangement (1) for holding a substrate (10) in a material deposition apparatus, which substrate (10) has a deposition side (10a) upon which material (M) is to be deposited, and which arrangement (1) comprises: a shadow mask (20) comprising a number of deposition openings (Di); a support structure (30) comprising a number of surround openings (Si); and a support structure holding means (6) for holding the support mask (30) and/or a substrate holding means (5) for holding the substrate (10), such that the support structure (30) is on the same side as the deposition side (10a) of the substrate (10), and the shadow mask (20) is positioned between the substrate (10) and the support structure (30) such that at least one deposition opening (Di) of the shadow mask (10) lies within a corresponding surround opening (Si) of the support structure (30).