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    Driver's eye image detecting device and method in drowsy driver warning system
    1.
    发明申请
    Driver's eye image detecting device and method in drowsy driver warning system 审中-公开
    驾驶员眼睛图像检测装置和方法在昏昏欲睡的司机警告系统中

    公开(公告)号：US20050163383A1

    公开(公告)日：2005-07-28

    申请号：US10929258

    申请日：2004-08-30

    申请人： Hee-Jung Kim ,  Ho-Jun Lee ,  Kyong-Ha Park

    发明人： Hee-Jung Kim ,  Ho-Jun Lee ,  Kyong-Ha Park

    IPC分类号： G08B21/06 ,  G06K9/00 ,  G06K9/62

    CPC分类号： G06K9/00597

    摘要： A device for detecting a driver's eye image, which includes a camera for photographing a driver who is sitting in a car and outputting a photographed facial image of the driver, an eye template storing section for storing an eye template in the form of a standard human eye, and a control section for detecting an eye image from the driver's facial image inputted from the camera using the stored eye template. The device can rapidly obtain a driver's eye image for a drowsy driver warning system.

    摘要翻译： 一种用于检测驾驶员眼睛图像的装置，其包括摄像机，用于拍摄坐在汽车中的驾驶员并输出驾驶员的拍摄面部图像;眼模板存储部分，用于以标准人的形式存储眼模板 眼睛和控制部分，用于使用存储的眼睛模板从驾驶员从相机输入的面部图像中检测眼睛图像。 该设备可以快速获得驾驶员的眼睛图像，用于昏昏欲睡的驾驶员警告系统。

    Retardation compensators of negative C-type for liquid crystal display
    2.
    发明授权
    Retardation compensators of negative C-type for liquid crystal display 有权
    用于液晶显示的负C型延迟补偿器

    公开(公告)号：US08470413B2

    公开(公告)日：2013-06-25

    申请号：US12087739

    申请日：2007-01-11

    申请人： Hee-Jung Kim ,  Dong-Ryul Kim ,  Ho-Jun Lee ,  Sang-Uk Ryu ,  Hyo-Sun Lee ,  Boong-Goon Jeong ,  Dae-Woo Nam ,  Ju-Eun Cha

    发明人： Hee-Jung Kim ,  Dong-Ryul Kim ,  Ho-Jun Lee ,  Sang-Uk Ryu ,  Hyo-Sun Lee ,  Boong-Goon Jeong ,  Dae-Woo Nam ,  Ju-Eun Cha

    IPC分类号： C09K19/00

    CPC分类号： G02F1/1333 ,  G02B1/04 ,  G02B5/3083 ,  G02F1/133634 ,  Y10T428/10 ,  Y10T428/1036 ,  Y10T428/105 ,  Y10T428/31786 ,  C08L81/00

    摘要： Disclosed is a negative C-type retardation compensator for a liquid crystal display. The negative C-type retardation compensator for the liquid crystal display includes polyarylate having a thio group or a sulfur oxide group in a polymer main chain thereof. Accordingly, the retardation compensator has an absolute value of negative retardation that is larger in a thickness direction than a retardation compensator which includes polyarylate having no thio group or sulfur oxide group in a polymer main chain thereof even though the retardation compensator having the thio group or sulfur oxide group and the retardation compensator having no thio group or sulfur oxide group are the same as each other in thickness. Thereby, the negative C-type retardation compensator for liquid crystal displays is capable of being desirably applied to the liquid crystal displays.

    摘要翻译： 公开了用于液晶显示器的负C型延迟补偿器。 用于液晶显示器的负C型延迟补偿器包括其聚合物主链中具有硫基或硫氧化物基团的多芳基化合物。 因此，延迟补偿器具有在包含聚合物主链中不含硫基或硫氧化物基团的多芳基化物的延迟补偿器的厚度方向上的负相位差绝对值即使具有硫基的相位差补偿器或 硫氧化物基团和没有硫基或硫氧化物基团的延迟补偿器的厚度彼此相同。 由此，液晶显示器的负C型延迟补偿器能够适用于液晶显示器。

    Retardation Compensators of Negative C-Type For Liquid Crystal Display
    4.
    发明申请
    Retardation Compensators of Negative C-Type For Liquid Crystal Display 有权
    液晶显示器负C型延迟补偿器

    公开(公告)号：US20090002613A1

    公开(公告)日：2009-01-01

    申请号：US12087739

    申请日：2006-11-15

    申请人： Hee-Jung Kim ,  Dong-Ryul Kim ,  Ho-Jun Lee ,  Sang-Uk Ryu ,  Hyo-Sun Lee ,  Boong-Goon Jeong ,  Dae-Woo Nam ,  Ju-Eun Cha

    发明人： Hee-Jung Kim ,  Dong-Ryul Kim ,  Ho-Jun Lee ,  Sang-Uk Ryu ,  Hyo-Sun Lee ,  Boong-Goon Jeong ,  Dae-Woo Nam ,  Ju-Eun Cha

    IPC分类号： G02F1/13363 ,  B29D11/00

    CPC分类号： G02F1/1333 ,  G02B1/04 ,  G02B5/3083 ,  G02F1/133634 ,  Y10T428/10 ,  Y10T428/1036 ,  Y10T428/105 ,  Y10T428/31786 ,  C08L81/00

    摘要： Disclosed is a negative C-type retardation compensator for a liquid crystal display. The negative C-type retardation compensator for the liquid crystal display includes polyarylate having a thio group or a sulfur oxide group in a polymer main chain thereof. Accordingly, the retardation compensator has an absolute value of negative retardation that is larger in a thickness direction than a retardation compensator which includes polyarylate having no thio group or sulfur oxide group in a polymer main chain thereof even though the retardation compensator having the thio group or sulfur oxide group and the retardation compensator having no thio group or sulfur oxide group are the same as each other in thickness. Thereby, the negative C-type retardation compensator for liquid crystal displays is capable of being desirably applied to the liquid crystal displays.

    摘要翻译： 公开了用于液晶显示器的负C型延迟补偿器。 用于液晶显示器的负C型延迟补偿器包括其聚合物主链中具有硫基或硫氧化物基团的多芳基化合物。 因此，延迟补偿器具有在包含聚合物主链中不含硫基或硫氧化物基团的多芳基化物的延迟补偿器的厚度方向上的负相位差绝对值即使具有硫基的相位差补偿器或 硫氧化物基团和没有硫基或硫氧化物基团的延迟补偿器的厚度彼此相同。 由此，液晶显示器的负C型延迟补偿器能够适用于液晶显示器。

    Thin film transistor array panel and method of manufacturing the same
    8.
    发明授权
    Thin film transistor array panel and method of manufacturing the same 有权
    薄膜晶体管阵列面板及其制造方法

    公开(公告)号：US08334538B2

    公开(公告)日：2012-12-18

    申请号：US12875228

    申请日：2010-09-03

    申请人： Ho-Jun Lee ,  Yeo-Geon Yoon ,  Hyoung-Wook Lee ,  Mi-Ae Lee

    发明人： Ho-Jun Lee ,  Yeo-Geon Yoon ,  Hyoung-Wook Lee ,  Mi-Ae Lee

    IPC分类号： H01L33/00 ,  H01L21/84

    CPC分类号： H01L27/124 ,  H01L27/1244 ,  H01L27/1288

    摘要： A thin film transistor array panel includes: an insulation substrate; a gate line disposed on the insulation substrate and including a compensation pattern protruding from the gate line; a first data line and a second data line both intersecting the gate line; a first thin film transistor connected to the gate line and the first data line; a second thin film transistor connected to the gate line and the second data line; and a first pixel electrode and a second pixel electrode connected to the first thin film transistor and the second thin film transistor, respectively. The first pixel electrode and the second pixel electrode share the compensation pattern.

    摘要翻译： 薄膜晶体管阵列面板包括：绝缘基板; 栅极线，设置在所述绝缘基板上并且包括从所述栅极线突出的补偿图案; 第一数据线和第二数据线都与所述栅极线相交; 连接到栅极线和第一数据线的第一薄膜晶体管; 连接到栅极线和第二数据线的第二薄膜晶体管; 以及分别连接到第一薄膜晶体管和第二薄膜晶体管的第一像素电极和第二像素电极。 第一像素电极和第二像素电极共享补偿图案。

    Compound semiconductor substrate grown on metal layer, method of manufacturing the same, and compound semiconductor device using the same
    9.
    发明授权
    Compound semiconductor substrate grown on metal layer, method of manufacturing the same, and compound semiconductor device using the same 有权
    在金属层上生长的化合物半导体衬底，其制造方法和使用其的化合物半导体器件

    公开(公告)号：US08158501B2

    公开(公告)日：2012-04-17

    申请号：US12967897

    申请日：2010-12-14

    申请人： Yong-Jin Kim ,  Doo-Soo Kim ,  Ho-Jun Lee ,  Dong-Kun Lee

    发明人： Yong-Jin Kim ,  Doo-Soo Kim ,  Ho-Jun Lee ,  Dong-Kun Lee

    IPC分类号： H01L21/02

    CPC分类号： H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/20 ,  H01L33/38

    摘要： The present invention relates to a compound semiconductor substrate and a method for manufacturing the same. The present invention provides the manufacturing method which coats spherical balls on a substrate, forms a metal layer between the spherical balls, removes the spherical balls to form openings, and grows a compound semiconductor layer from the openings. According to the present invention, the manufacturing method can be simplified and grow a high quality compound semiconductor layer rapidly, simply and inexpensively, as compared with a conventional ELO (Epitaxial Lateral Overgrowth) method or a method for forming a compound semiconductor layer on a metal layer. And, the metal layer serves as one electrode of a light emitting device and a light reflecting film to provide a light emitting device having reduced power consumption and high light emitting efficiency.

    摘要翻译： 化合物半导体基板及其制造方法技术领域本发明涉及化合物半导体基板及其制造方法。 本发明提供一种制造方法，其在基板上涂布球形球，在球形球之间形成金属层，去除球形球以形成开口，并从开口生长化合物半导体层。 根据本发明，与传统的ELO（外延横向生长）方法或在金属上形成化合物半导体层的方法相比，可以简化和简单且廉价地生产高质量的化合物半导体层 层。 并且，金属层用作发光器件和光反射膜的一个电极，以提供具有降低的功率消耗和高发光效率的发光器件。

    Method of manufacturing thin film transistor substrate
    10.
    发明授权
    Method of manufacturing thin film transistor substrate 有权
    制造薄膜晶体管基板的方法

    公开(公告)号：US08153463B2

    公开(公告)日：2012-04-10

    申请号：US12729172

    申请日：2010-03-22

    申请人： Hong-Kee Chin ,  Yunjong Yeo ,  Sanggab Kim ,  Junho Song ,  Kyehun Lee ,  Ho-Jun Lee

    发明人： Hong-Kee Chin ,  Yunjong Yeo ,  Sanggab Kim ,  Junho Song ,  Kyehun Lee ,  Ho-Jun Lee

    IPC分类号： H01L21/00

    CPC分类号： H01L27/1288 ,  H01L27/1214

    摘要： A method of manufacturing a thin film transistor substrate includes a first process in which a gate line pattern including a gate line and a gate electrode is formed with a first conductive material on a substrate using a first mask, a second process in which a first insulating layer is formed on the substrate and a data line pattern including a data line, a source electrode, and a drain electrode is formed with a second conductive material using a second mask, and a third process in which a second insulating layer is formed on the substrate and a pixel electrode connected to the drain electrode is formed on the second insulating layer with a third conductive material.

    摘要翻译： 制造薄膜晶体管基板的方法包括第一工艺，其中包括栅极线和栅电极的栅极线图案使用第一掩模在基板上形成第一导电材料;第二工艺，其中第一绝缘 在衬底上形成层，并且使用第二掩模，用第二导电材料形成包括数据线，源电极和漏电极的数据线图案，以及在第二掩模上形成第二绝缘层的第三工艺 连接到漏极的衬底和像素电极用第三导电材料形成在第二绝缘层上。