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1.发明授权公开(公告)号：US06714392B2
公开(公告)日：2004-03-30
申请号：US09906475
申请日：2001-07-16
申请人： Heinz Opolka , Paul-Werner Von Basse , Thomas Scheiter , Rainer Grossmann , Christian Peters , Reinhard Fischbach , Andreas Gaymann , Thomas Rosteck , Domagoj Siprak , Thorsten Sasse , Reinhard Göllner , Justin Bierner , Michael Melzl , Klaus Hammer , Markus Witte
发明人： Heinz Opolka , Paul-Werner Von Basse , Thomas Scheiter , Rainer Grossmann , Christian Peters , Reinhard Fischbach , Andreas Gaymann , Thomas Rosteck , Domagoj Siprak , Thorsten Sasse , Reinhard Göllner , Justin Bierner , Michael Melzl , Klaus Hammer , Markus Witte
IPC分类号： H05F300
CPC分类号： H01L23/60 , G06K9/00053 , H01L2924/0002 , H01L2924/00
摘要： An electronic component is described and has a dielectric layer which is constructed on a substrate, conductive surfaces that are constructed on the dielectric layer, and an electrically conductive guard structure. The guard structure is disposed in a plane above the conductive surfaces such that the conductive surfaces are not completely covered by the guard structure.
摘要翻译： 描述了电子部件，并且具有构造在基板上的介电层，构造在电介质层上的导电表面和导电保护结构。 防护结构设置在导电表面上方的平面中，使得导电表面不被保护结构完全覆盖。
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公开(公告)号：US07054469B2
公开(公告)日：2006-05-30
申请号：US10060431
申请日：2002-01-30
IPC分类号： G06K9/00
CPC分类号： G06K9/00053 , G01D5/24
摘要： A conductor layer is patterned into flat portions, for example of a fingerprint sensor that effects capacitive measurement. The conductor layer is fragmented in a lattice-like manner by cutouts so that an applied passivation layer rests on a base layer that is present beneath the conductor layer. The interlaminar shear strength of the passivation is increased in this way.
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3.发明授权Semiconductor component having double passivating layers formed of two passivating layers of different dielectric materials 失效半导体元件具有由两种不同介电材料的钝化层形成的双钝化层公开(公告)号：US06664612B2
公开(公告)日：2003-12-16
申请号：US09757328
申请日：2001-01-09
IPC分类号： H01L2358
CPC分类号： G06K9/0002 , H01L21/3145
摘要： A semiconductor component with passivation includes at least two double passivating layers, of which an uppermost is applied to a planar surface of a layer located therebelow. The double passivating layers include two layers of different dielectric materials, for example silicon oxide and silicon nitride. The respective thicknesses of the individual passivating layers can be adapted to dimensions of the structuring of the layer to which the passivation is applied. This produces a reliable passivation which is particularly suitable for capacitively measuring fingerprint sensors.
摘要翻译： 具有钝化的半导体部件包括至少两个双钝化层，其中最上层被施加到位于其下方的层的平坦表面。 双钝化层包括两层不同的介电材料，例如氧化硅和氮化硅。 单个钝化层的各自的厚度可以适应于施加钝化层的层的结构尺寸。 这产生了可靠的钝化，其特别适用于电容测量指纹传感器。
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公开(公告)号：US06365888B2
公开(公告)日：2002-04-02
申请号：US09782733
申请日：2001-02-13
IPC分类号： H01L2700
CPC分类号： G06K9/0002
摘要： A grid-shaped array of conductor areas is used for capacitive image acquisition. Shielding conductors are disposed in each case between the conductors that are provided for measurement. During a plurality of charging and discharging cycles, the potential is always carried along on the conductors belonging to a respective pixel in order to prevent displacement currents between the shielding capacitors. By way of example, a compensation line with a feedback operational amplifier can be used for identically altering the electrical potentials on the conductors.
摘要翻译： 导体区域的格子阵列用于电容图像采集。 每个壳体中的屏蔽导体都设置在用于测量的导体之间。 在多个充电和放电循环期间，为了防止屏蔽电容器之间的位移电流，电势总是沿着属于相应像素的导体承载。 作为示例，具有反馈运算放大器的补偿线可以用于相同地改变导体上的电位。
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公开(公告)号：US6140689A
公开(公告)日：2000-10-31
申请号：US202837
申请日：1998-12-21
CPC分类号： G01L9/0073 , H04R19/005
摘要： In a relative pressure sensor or miniaturized microphone as a micromechanical sensor component, a polysilicon membrane is arranged over a polysilicon membrane of an SOI substrate. A recess that is connected to the cavity between the membrane and the body silicon layer by openings in the body silicon layer is present in the substrate on the back side. Given an excursion of the membrane, a pressure equalization can therefore occur in the cavity as a result of these openings. The measurement occurs capacitatively by electrical connection of the electrically conductively doped membrane and a doped region formed in the body silicon layer.
摘要翻译： PCT No.PCT / DE97 / 02740 Sec。 371 1998年12月21日第 102（e）日期1998年12月21日PCT 1997年11月21日PCT PCT。 第WO98 / 23934号公报 日期1998年6月4日在作为微机械传感器部件的相对压力传感器或小型化麦克风中，多晶硅膜布置在SOI衬底的多晶硅膜上。 通过体硅层中的开口连接到膜和体硅层之间的空腔的凹部存在于背面的基板中。 考虑到膜的偏移，由于这些开口，因此在空腔中可以发生压力平衡。 测量通过导电掺杂膜的电连接和形成在体硅层中的掺杂区电容地进行。
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公开(公告)号：US5450754A
公开(公告)日：1995-09-19
申请号：US207067
申请日：1994-03-08
申请人： Markus Biebl , Thomas Scheiter , Helmut Klose
发明人： Markus Biebl , Thomas Scheiter , Helmut Klose
CPC分类号： G01L19/02 , G01L9/0073
摘要： A pressure sensor comprises a matrix of diaphragms of polysilicon which, via a structure of electrical conductors, are arranged at an upper side of a silicon substrate for the determination of their variable electrical capacitance dependent on the pressure stressing. These diaphragms are present in at least two different sizes. Capacitances of these diaphragms of a same size are respectively connected to form a sub-unit such that basic capacitances of these sub-units are of a respectively same size.
摘要翻译： 压力传感器包括多晶硅膜的矩阵，其经由电导体的结构布置在硅衬底的上侧，用于根据压力应力确定其可变电容。 这些隔膜以至少两种不同的尺寸存在。 相同尺寸的这些隔膜的电容分别连接以形成子单元，使得这些子单元的基本电容具有相同的尺寸。
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7.发明授权
公开(公告)号：US5373181A
公开(公告)日：1994-12-13
申请号：US142713
申请日：1993-10-25
申请人： Thomas Scheiter , Markus Biebl , Helmut Klose
发明人： Thomas Scheiter , Markus Biebl , Helmut Klose
IPC分类号： H01L27/04 , B81B1/00 , G01B7/28 , G01L1/14 , G06K9/00 , G06T1/00 , H01L21/822 , H01L29/04 , H01L21/44
CPC分类号： G01L1/146 , G01L1/148 , G06K9/0002
摘要： A grid-like arrangement of membranes of doped polysilicon are mounted on a substrate but are electrically insulated therefrom each membrane extends over a cavity and is joined to the substrate at at least two supporting locations so that they cavity lies between the membrane and the substrate. Changes in an electrical quantity existing between the membranes and the substrate are measured as forces exerted on the grid-like arrangement of sensor elements so that the ridges in the skin on a finger tip may be sensed for detecting a fingerprint.
摘要翻译： 掺杂多晶硅膜的栅状布置安装在基板上，但是与其电绝缘，每个膜在空腔上延伸并且在至少两个支撑位置处连接到基板，使得其空腔位于膜和基板之间。 测量存在于膜和基底之间的电量的变化作为施加在传感器元件的格栅状布置上的力，从而可以感测指尖上的皮肤中的脊以检测指纹。
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公开(公告)号：US6020050A
公开(公告)日：2000-02-01
申请号：US930947
申请日：1997-10-10
CPC分类号： G01L1/148 , G01P15/0802 , G01P15/125 , H01L2924/0002 , Y10T428/24917 , Y10T428/24926
摘要： A semiconductor chip has a membrane mounted on supports that are held in the material of the chip so that the membrane is supported at a space from the chip. The membrane may be a metal layer. The supports are columns or webs that extend into the chip material. Electrical connections to the membrane may be made by conductive supports.
摘要翻译： PCT No.PCT / DE96 / 00575 Sec。 371日期：1997年10月10日 102（e）日期1997年10月10日PCT 1996年4月1日PCT PCT。 公开号WO96 / 32627 日期1996年10月17日半导体芯片具有安装在保持在芯片的材料中的支撑件上的膜，使得膜被从芯片的空间支撑。 膜可以是金属层。 支撑体是延伸到芯片材料中的柱或网。 与膜的电连接可以由导电支撑件制成。
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公开(公告)号：US5447067A
公开(公告)日：1995-09-05
申请号：US207080
申请日：1994-03-08
申请人： Markus Biebl , Thomas Scheiter , Helmut Klose
发明人： Markus Biebl , Thomas Scheiter , Helmut Klose
CPC分类号： G01P15/125 , G01P15/0802 , G01P15/123 , G01P2015/0814
摘要： An acceleration sensor has a proof mass attached by resilient elements, in the form of micromechanical components, in a monocrystalline silicon layer of an SOI (silicon-on-insulator) substrate, the insulator layer of the substrate being removed under the structure which is susceptible to acceleration, in order to enable free mobility of the micromechanical components. Piezoresistors are provided for detecting movement of the proof mass, the piezoresistors supplying electrical signals to an evaluation circuit.
摘要翻译： 加速度传感器具有通过在MEMS（绝缘体上硅）衬底的单晶硅层中以微机械部件的形式的弹性元件附着的校验物质，该衬底的绝缘体层在易感的结构下被去除 以加速，以便实现微机械部件的自由移动。 提供压阻器用于检测检测质量块的运动，压电电阻器将电信号提供给评估电路。
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公开(公告)号：US5431051A
公开(公告)日：1995-07-11
申请号：US219538
申请日：1994-03-29
申请人： Markus Biebl , Thomas Scheiter , Helmut Klose
发明人： Markus Biebl , Thomas Scheiter , Helmut Klose
CPC分类号： G01P15/0894
摘要： An acceleration sensor is produced on a silicon substrate by etching to leave a cantilevered beam of polysilicon with a tip on the substrate projecting toward this beam. Acceleration of the sensor causes the beam to bend, thereby changing the spacing between the tip and the beam, and thereby also changing the tunnel current, which is measured. Electrodes are provided that, given application of a potential thereto, effect an electrostatic compensation of the bending of the beam.
摘要翻译： 通过蚀刻在硅衬底上产生加速度传感器，以留下多晶硅的悬臂梁，衬底上的尖端朝向该梁突出。 传感器的加速度导致光束弯曲，从而改变尖端和光束之间的间距，从而也改变测量的隧道电流。 提供电极，其给予施加电位以对光束的弯曲进行静电补偿。
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