摘要:
A process is disclosed for the production of metal sheets enamelled with two layers, wherein the sheet is coated, before shaping, with a polymer suspension. The sheet is then dried and shaped, and optionally is coated with an enamel frit. The sheet is then fired at a temperature of 560 to 850 degrees C. The binder in the polymer suspension is preferably a material which burns completely at melting and stoving temperature.
摘要:
A device for storing collectibles, including a base unit having a first receiving region that receives a first object and a second receiving region that receives a collectibles storage unit. The base unit has a connecting wall connecting the first and second side walls, and two receiving elements for mounting the storage unit. The first receiving region is delimited by the first side wall, the second side wall and the connecting wall. The second receiving region, open on at least one side and separated from the first receiving region by the connecting wall, is delimited by the first receiving element, the second receiving element and the connecting wall. The storage unit includes at least two segments connectable to and separable from each other, wherein each segment has a receiving region for receiving at least one collectible and wherein at least a partial region of each segment is transparent.
摘要:
In one embodiment, a method of forming a semiconductor package comprises providing a first die having contact regions on a top surface but not on an opposite bottom surface. A dielectric liner layer is deposited under the bottom surface of the first die. The first die is attached with the deposited dielectric liner layer to a die paddle of a substrate. A bond layer is disposed between the substrate and the dielectric liner layer.
摘要:
A semiconductor structure includes a semiconductor layer stack includes a semiconductor substrate of a first conductivity type, a heavily-doped buried layer of a second conductivity type, and a monocrystalline semiconductor layer of a third conductivity type formed on top of the semiconductor layer and the buried layer, a contact to the buried layer, the contact formed in a contact hole, and a lateral insulation of different portions of the semiconductor structure, the insulation formed in an isolation trench. A contact to the semiconductor substrate may be formed within the isolation trench.
摘要:
A semiconductor structure includes a semiconductor layer stack includes a semiconductor substrate of a first conductivity type, a heavily-doped buried layer of a second conductivity type, and a monocrystalline semiconductor layer of a third conductivity type formed on top of the semiconductor layer and the buried layer, a contact to the buried layer, the contact formed in a contact hole, and a lateral insulation of different portions of the semiconductor structure, the insulation formed in an isolation trench. A contact to the semiconductor substrate may be formed within the isolation trench.
摘要:
The present invention is directed to a process for the preparation of air drying binders containing free isocyanate groups, having thixotropic properties and prepared by reacting aromatic diamines which have at least one alkyl substituent in the ortho position to each amino group with either prepolymers or semi-prepolymers containing free isocyanate groups and based on polyisocyanate mixture of the diphenylmethane series containing at least 20% by weight of 2,4'-diisocyanatodiphenylmethane and organic polyhydroxyl compounds or mixtures of these prepolymers or semi-prepolymers with prepolymers or semi-prepolymers based on other organic polyisocyanates, provided that the mixture contains at least 3% of the prepolymers or semi-prepolymers based on polyisocyanate mixtures of the diphenylmethane series. The invention further relates to the binders produced by this process and their use for the preparation of coating and sealing compounds which harden under the influence of atmospheric moisture.
摘要:
The present invention is directed to a process for applying a chemically resistant coating to a substrate which entails coating a substrate with a composition containing(a) a liquid polyisocyanate component which is present in an amount sufficient to provide an isocyanate index for said composition of at least 30,(b) a polyol component containing at least one organic polyhydroxyl compound having an alcoholic hydroxyl group content of about 0.5 to 15% by weight,(c) water in a quantity of from 20 to 60% by weight, based on the weight of component (b),(d) glycerine in a quantity of about 40 to 200% by weight, based on the weight of component (b), and(e) at least one alkaline earth metal hydroxide or oxide in a quantity of about 50 to 1000% by weight, based on the weight of the glycerine.
摘要:
According to an embodiment, a method of forming a semiconductor device includes: providing a wafer having a semiconductor substrate with a first side a second side opposite the first side, and a dielectric region arranged on the first side; mounting the wafer with the first side on a carrier system; etching a deep vertical trench from the second side through the semiconductor substrate to the dielectric region, thereby insulating a mesa region from the remaining semiconductor substrate; and filling the deep vertical trench with a dielectric material.
摘要:
A semiconductor component includes a semiconductor body, in which are formed: a substrate of a first conduction type, a buried semiconductor layer of a second conduction type arranged on the substrate, and a functional unit semiconductor layer of a third conduction type arranged on the buried semiconductor layer, in which at least two semiconductor functional units arranged laterally alongside one another are provided. The buried semiconductor layer is part of at least one semiconductor functional unit, the semiconductor functional units being electrically insulated from one another by an isolation structure which permeates the functional unit semiconductor layer, the buried semiconductor layer, and the substrate. The isolation structure includes at least one trench and an electrically conductive contact to the substrate, the contact to the substrate being electrically insulated from the functional unit semiconductor layer and the buried layer by the at least one trench.
摘要:
A semiconductor component includes a semiconductor body, in which are formed: a substrate of a first conduction type, a buried semiconductor layer of a second conduction type arranged on the substrate, and a functional unit semiconductor layer of a third conduction type arranged on the buried semiconductor layer, in which at least two semiconductor functional units arranged laterally alongside one another are provided. The buried semiconductor layer is part of at least one semiconductor functional unit, the semiconductor functional units being electrically insulated from one another by an isolation structure which permeates the functional unit semiconductor layer, the buried semiconductor layer, and the substrate. The isolation structure includes at least one trench and an electrically conductive contact to the substrate, the contact to the substrate being electrically insulated from the functional unit semiconductor layer and the buried layer by the at least one trench.