公开(公告)号：US09445731B2

公开(公告)日：2016-09-20

申请号：US13468511

申请日：2012-05-10

申请人： Hideaki Fukuzawa ,  Osamu Nishimura ,  Takehiko Suzuki ,  Michiko Hara ,  Yoshihiko Fuji

发明人： Hideaki Fukuzawa ,  Osamu Nishimura ,  Takehiko Suzuki ,  Michiko Hara ,  Yoshihiko Fuji

IPC分类号： A61B5/02 ,  A61B5/021 ,  A61B5/00

CPC分类号： A61B5/02141 ,  A61B5/02125 ,  A61B5/6832 ,  A61B2562/0223

摘要： According to one embodiment, a pulse wave velocity measuring device includes a first sensor, a second sensor, a base body and a calculation unit. The first sensor is configured to sense a pulse wave propagating through an interior of a vessel. The second sensor is separated from the first sensor and is configured to sense the pulse wave. The base body is configured to hold the first sensor and the second sensor and regulate a distance between the first sensor and the second sensor. The calculation unit is configured to derive a difference between a time of the sensing of the pulse wave by the first sensor and a time of the sensing of the pulse wave by the second sensor.

摘要翻译： 根据一个实施例，脉搏波速度测量装置包括第一传感器，第二传感器，基体和计算单元。 第一传感器被配置为感测通过血管内部传播的脉波。 第二传感器与第一传感器分离并被配置为感测脉搏波。 基体构造成保持第一传感器和第二传感器并调节第一传感器和第二传感器之间的距离。 计算单元被配置为导出由第一传感器检测脉搏波的时间与第二传感器对脉搏波的感测时间之间的差异。

公开(公告)号：US08973446B2

公开(公告)日：2015-03-10

申请号：US13730016

申请日：2012-12-28

申请人： Hideaki Fukuzawa ,  Akihiko Enamito ,  Osamu Nishimura ,  Michiko Hara ,  Hiromi Yuasa ,  Yoshihiko Fuji ,  Masayuki Kii ,  Eizo Fujisawa

发明人： Hideaki Fukuzawa ,  Akihiko Enamito ,  Osamu Nishimura ,  Michiko Hara ,  Hiromi Yuasa ,  Yoshihiko Fuji ,  Masayuki Kii ,  Eizo Fujisawa

IPC分类号： G01B7/16 ,  G01L9/00 ,  G01L9/16 ,  G01L1/12

CPC分类号： G01L1/12 ,  G01L1/125 ,  G01L9/005 ,  G01L9/008 ,  G01L9/16

摘要： According to one embodiment, a pressure sensor includes a base, and a first sensor unit. The first sensor unit includes a first transducer thin film, a first strain sensing device and a second strain sensing device. The first strain sensing device includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and the second magnetic layers. The second strain sensing device is provided apart from the first strain sensing device on the first membrane surface and provided at a location different from a location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third and the fourth magnetic layers, the first and the second intermediate layers being nonmagnetic. The first and the second strain sensing devices, and the barycenter are in a straight line.

摘要翻译： 根据一个实施例，压力传感器包括基座和第一传感器单元。 第一传感器单元包括第一换能器薄膜，第一应变感测装置和第二应变感测装置。 第一应变感测装置包括第一磁性层，第二磁性层和设置在第一和第二磁性层之间的第一中间层。 第二应变感测装置与第一膜表面上的第一应变感测装置分开设置，并且设置在与重心的位置不同的位置处，第二应变感测装置包括第三磁性层，第四磁性层和 第二中间层设置在第三和第四磁性层之间，第一和第二中间层是非磁性的。 第一和第二应变感测装置和重心处于直线。

公开(公告)号：US20130255393A1

公开(公告)日：2013-10-03

申请号：US13730016

申请日：2012-12-28

申请人： Hideaki Fukuzawa ,  Akihiko Enamito ,  Osamu Nishimura ,  Michiko Hara ,  Hiromi Yuasa ,  Yoshihiko Fuji ,  Masayuki Kii ,  Eizo Fujisawa

发明人： Hideaki Fukuzawa ,  Akihiko Enamito ,  Osamu Nishimura ,  Michiko Hara ,  Hiromi Yuasa ,  Yoshihiko Fuji ,  Masayuki Kii ,  Eizo Fujisawa

IPC分类号： G01L1/12

CPC分类号： G01L1/12 ,  G01L1/125 ,  G01L9/005 ,  G01L9/008 ,  G01L9/16

摘要： According to one embodiment, a pressure sensor includes a base, and a first sensor unit. The first sensor unit includes a first transducer thin film, a first strain sensing device and a second strain sensing device. The first strain sensing device includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and the second magnetic layers. The second strain sensing device is provided apart from the first strain sensing device on the first membrane surface and provided at a location different from a location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third and the fourth magnetic layers, the first and the second intermediate layers being nonmagnetic. The first and the second strain sensing devices, and the barycenter are in a straight line.

公开(公告)号：US09032808B2

公开(公告)日：2015-05-19

申请号：US13246069

申请日：2011-09-27

申请人： Devin Giddings ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Michiko Hara ,  Hiromi Yuasa

发明人： Devin Giddings ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Michiko Hara ,  Hiromi Yuasa

IPC分类号： G01L1/22 ,  G11B5/127 ,  G11B5/39 ,  G01R33/09 ,  H01L43/08 ,  H01F10/30 ,  A61B5/021 ,  A61B5/022 ,  H01F10/32

CPC分类号： G01R33/091 ,  A61B5/02108 ,  A61B5/022 ,  A61B2562/0247 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/399 ,  G11B2005/3996 ,  H01F10/30 ,  H01F10/325 ,  H01F10/3254 ,  H01F10/3259 ,  H01L43/08

摘要： According to one embodiment, a magneto-resistive effect device, includes a stacked body stacked on a substrate, a pair of first electrodes that feeds current to the stacked body, a strain introduction member, and a second electrode for applying a voltage to the strain introduction member. The stacked body includes a first magnetic layer that includes one or more metals selected from the group consisting of iron, cobalt, and nickel, a second magnetic layer stacked on the first magnetic layer, having a composition that is different from the first magnetic layer, and a spacer layer disposed between the first magnetic layer and the second magnetic layer.

摘要翻译： 根据一个实施例，磁阻效应装置包括堆叠在基板上的堆叠体，将一个电流馈送到堆叠体的一对第一电极，应变引入部件和用于向该应变施加电压的第二电极 介绍会员。 层叠体包括：第一磁性层，其包含选自铁，钴和镍的一种或多种金属，堆叠在第一磁性层上的具有与第一磁性层不同的组成的第二磁性层， 以及设置在第一磁性层和第二磁性层之间的间隔层。

公开(公告)号：US08933909B2

公开(公告)日：2015-01-13

申请号：US13479861

申请日：2012-05-24

申请人： Devin Giddings ,  Nobuyoshi Saito ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Michiko Hara ,  Hajime Yamaguchi

发明人： Devin Giddings ,  Nobuyoshi Saito ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Michiko Hara ,  Hajime Yamaguchi

IPC分类号： B82Y25/00 ,  G01N17/00 ,  G06F3/041

CPC分类号： G06F3/0412 ,  G06F3/0414

摘要： According to one embodiment, a touch panel includes first interconnections, second interconnections, sensor units and a control unit. The first interconnections are arranged along a first direction, and extend along a second direction intersecting with the first direction. The second interconnections are arranged along a third direction intersecting with the first direction, and extend along a fourth direction intersecting with the third direction. The sensor units are provided in intersection portions of the first and second interconnections, include first and second ferromagnetic layers, and an intermediate layer, allow a current to be passed, and have one end connected to the first interconnections and another end connected to the second interconnections. The control unit is connected to the first and second interconnections. An electric resistance of the sensor units changes in accordance with a stress applied. The control unit senses a change in the electric resistance.

摘要翻译： 根据一个实施例，触摸面板包括第一互连，第二互连，传感器单元和控制单元。 第一互连沿着第一方向布置，并且沿着与第一方向相交的第二方向延伸。 第二互连沿着与第一方向相交的第三方向布置，并且沿与第三方向相交的第四方向延伸。 传感器单元设置在第一和第二互连的交叉部分中，包括第一和第二铁磁层，以及中间层，允许电流通过，并且一端连接到第一互连，另一端连接到第二互连 互连。 控制单元连接到第一和第二互连。 传感器单元的电阻根据施加的应力而变化。 控制单元感测电阻的变化。

公开(公告)号：US20130242435A1

公开(公告)日：2013-09-19

申请号：US13728281

申请日：2012-12-27

申请人： Yoshihiko FUJI ,  Michiko Hara ,  Hideaki Fukuzawa ,  Hiromi Yuasa

发明人： Yoshihiko FUJI ,  Michiko Hara ,  Hideaki Fukuzawa ,  Hiromi Yuasa

IPC分类号： G11B5/127 ,  H01L43/10

CPC分类号： G11B5/1274 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3983 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

摘要： According to one embodiment, a magneto-resistance effect element includes: a first electrode; a second electrode; a first magnetic layer provided between the first and the second electrodes; a second magnetic layer provided between the first magnetic layer and the second electrode; and an oxide layer of a metal oxide provided between the first magnetic layer and the second magnetic layer. The oxide layer includes wustite crystal grains of a wustite structure with a (1 1 1) plane orientation containing iron. A lattice spacing of a (1 1 1) plane of the wustite crystal grains is not less than 0.253 nanometers and not more than 0.275 nanometers.

摘要翻译： 根据一个实施例，磁阻效应元件包括：第一电极; 第二电极; 设置在第一和第二电极之间的第一磁性层; 设置在所述第一磁性层和所述第二电极之间的第二磁性层; 以及设置在第一磁性层和第二磁性层之间的金属氧化物的氧化物层。 氧化物层包括具有含（111）面取向的方铁矿结构的方铁矿晶粒含铁。 方铁矿晶粒的（111）面的晶格间距不小于0.253纳米，不大于0.275纳米。

公开(公告)号：US20130076687A1

公开(公告)日：2013-03-28

申请号：US13479861

申请日：2012-05-24

申请人： Devin GIDDINGS ,  Nobuyoshi Saito ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Michiko Hara ,  Hajime Yamaguchi

发明人： Devin GIDDINGS ,  Nobuyoshi Saito ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Michiko Hara ,  Hajime Yamaguchi

IPC分类号： G06F3/045

CPC分类号： G06F3/0412 ,  G06F3/0414

摘要： According to one embodiment, a touch panel includes first interconnections, second interconnections, sensor units and a control unit. The first interconnections are arranged along a first direction, and extend along a second direction intersecting with the first direction. The second interconnections are arranged along a third direction intersecting with the first direction, and extend along a fourth direction intersecting with the third direction. The sensor units are provided in intersection portions of the first and second interconnections, include first and second ferromagnetic layers, and an intermediate layer, allow a current to be passed, and have one end connected to the first interconnections and another end connected to the second interconnections. The control unit is connected to the first and second interconnections. An electric resistance of the sensor units changes in accordance with a stress applied. The control unit senses a change in the electric resistance.

摘要翻译： 根据一个实施例，触摸面板包括第一互连，第二互连，传感器单元和控制单元。 第一互连沿着第一方向布置，并且沿着与第一方向相交的第二方向延伸。 第二互连沿着与第一方向相交的第三方向布置，并且沿与第三方向相交的第四方向延伸。 传感器单元设置在第一和第二互连的交叉部分中，包括第一和第二铁磁层，以及中间层，允许电流通过，并且一端连接到第一互连，另一端连接到第二互连 互连。 控制单元连接到第一和第二互连。 传感器单元的电阻根据施加的应力而变化。 控制单元感测电阻的变化。

公开(公告)号：US08228643B2

公开(公告)日：2012-07-24

申请号：US12585854

申请日：2009-09-25

申请人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Shuichi Murakami ,  Michiko Hara ,  Kunliang Zhang ,  Min Li ,  Erhard Schreck

发明人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Shuichi Murakami ,  Michiko Hara ,  Kunliang Zhang ,  Min Li ,  Erhard Schreck

IPC分类号： G11B5/39

CPC分类号： G01R33/093 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  G11B5/398 ,  G11B5/3983 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/307 ,  H01L43/08 ,  H01L43/12

摘要： A method for manufacturing a magneto-resistance effect element is provided. The magneto-resistance effect element includes a first magnetic layer including a ferromagnetic material, a second magnetic layer including a ferromagnetic material and a spacer layer provided between the first magnetic layer and the second magnetic layer, the spacer layer having an insulating layer and a conductive portion penetrating through the insulating layer. The method includes: forming a film to be a base material of the spacer layer; performing a first treatment using a gas including at least one of oxygen molecules, oxygen atoms, oxygen ions, oxygen plasma and oxygen radicals on the film; and performing a second treatment using a gas including at least one of nitrogen ions, nitrogen atoms, nitrogen plasma, and nitrogen radicals on the film submitted to the first treatment.

摘要翻译： 提供一种制造磁阻效应元件的方法。 磁阻效应元件包括包括铁磁材料的第一磁性层，包括铁磁材料的第二磁性层和设置在第一磁性层和第二磁性层之间的间隔层，间隔层具有绝缘层和导电 部分穿透绝缘层。 该方法包括：将膜形成为间隔层的基材; 使用包含氧分子，氧原子，氧离子，氧等离子体和氧自由基中的至少一种的气体进行第一处理; 以及使用包含氮离子，氮原子，氮等离子体和氮自由基中的至少一种的气体进行第一次处理的膜的第二处理。

公开(公告)号：US20110295128A1

公开(公告)日：2011-12-01

申请号：US13045759

申请日：2011-03-11

申请人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Alexander Devin Giddings ,  Michiko Hara ,  Shuichi Murakami

发明人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Alexander Devin Giddings ,  Michiko Hara ,  Shuichi Murakami

IPC分类号： A61B5/021

CPC分类号： A61B5/02141 ,  A61B5/0004 ,  A61B5/021 ,  A61B5/6824 ,  A61B5/6833 ,  A61B2560/0214 ,  A61B2562/028 ,  G01L9/16 ,  G01L19/06 ,  G01L19/069

摘要： A blood-pressure sensor includes a substrate, a first electrode, a magnetization fixed layer, a nonmagnetic layer, a magnetization free layer, and a second electrode. The substrate is bent to generate a tensile stress at least in a first direction. The first electrode is provided on the substrate. The magnetization fixed layer has magnetization to be fixed in a second direction, and is provided on the substrate. The nonmagnetic layer is provided on the magnetization fixed layer. The magnetization free layer has a magnetization direction which is different from the first direction and from a direction perpendicular to the first direction. The second electrode is provided on the magnetization free layer.

摘要翻译： 血压传感器包括基板，第一电极，磁化固定层，非磁性层，磁化自由层和第二电极。 弯曲基板至少在第一方向上产生拉伸应力。 第一电极设置在基板上。 磁化固定层具有在第二方向上固定的磁化，并且设置在基板上。 非磁性层设置在磁化固定层上。 磁化自由层具有不同于第一方向和与第一方向垂直的方向的磁化方向。 第二电极设置在无磁化层上。

公开(公告)号：US08824108B2

公开(公告)日：2014-09-02

申请号：US13728281

申请日：2012-12-27

申请人： Yoshihiko Fuji ,  Michiko Hara ,  Hideaki Fukuzawa ,  Hiromi Yuasa

发明人： Yoshihiko Fuji ,  Michiko Hara ,  Hideaki Fukuzawa ,  Hiromi Yuasa

IPC分类号： G11B5/39 ,  G11C11/16 ,  G11B5/127 ,  G01R33/09 ,  H01L43/10 ,  H01L43/08 ,  H01L27/22

CPC分类号： G11B5/1274 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3983 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

摘要： According to one embodiment, a magneto-resistance effect element includes: a first electrode; a second electrode; a first magnetic layer provided between the first and the second electrodes; a second magnetic layer provided between the first magnetic layer and the second electrode; and an oxide layer of a metal oxide provided between the first magnetic layer and the second magnetic layer. The oxide layer includes wustite crystal grains of a wustite structure with a (1 1 1) plane orientation containing iron. A lattice spacing of a (1 1 1) plane of the wustite crystal grains is not less than 0.253 nanometers and not more than 0.275 nanometers.

摘要翻译： 根据一个实施例，磁阻效应元件包括：第一电极; 第二电极; 设置在第一和第二电极之间的第一磁性层; 设置在所述第一磁性层和所述第二电极之间的第二磁性层; 以及设置在第一磁性层和第二磁性层之间的金属氧化物的氧化物层。 氧化物层包括具有含（111）面取向的方铁矿结构的方铁矿晶粒含铁。 方铁矿晶粒的（111）面的晶格间距不小于0.253纳米，不大于0.275纳米。