公开(公告)号：US08958138B2

公开(公告)日：2015-02-17

申请号：US13483095

申请日：2012-05-30

申请人： Hidekazu Nitta ,  Makoto Ohkura ,  Takuo Kaitoh ,  Katsumi Matsumoto

发明人： Hidekazu Nitta ,  Makoto Ohkura ,  Takuo Kaitoh ,  Katsumi Matsumoto

IPC分类号： G02B26/02 ,  G02B26/08 ,  B81B3/00

CPC分类号： G02B26/085 ,  B81B3/0072 ,  B81B2201/045 ,  B81C2201/0167

摘要： In a movable shutter-system display device, a movable shutter includes an amorphous silicon film material which has a low residual stress and thus is stable. A display device includes a display panel comprising a first substrate and a second substrate. The display panel includes a plurality of pixels; each of the plurality of pixels includes a movable shutter including amorphous silicon and a driving circuit for driving the movable shutter; and the amorphous silicon included in the movable shutter is formed of at least two amorphous silicon films, and where any two amorphous silicon films adjacent to each other among the at least two amorphous silicon films are a first amorphous silicon film and a second amorphous silicon film stacked on the first amorphous silicon film, the first amorphous silicon film and the second amorphous silicon film have different characteristic values.

摘要翻译： 在可移动快门系统显示装置中，可移动遮板包括具有低残余应力并因此是稳定的非晶硅膜材料。 显示装置包括：显示面板，包括第一基板和第二基板。 显示面板包括多个像素; 所述多个像素中的每一个包括可移动快门，其包括非晶硅和用于驱动所述活动快门的驱动电路; 并且包括在可移动快门中的非晶硅由至少两个非晶硅膜形成，并且其中在所述至少两个非晶硅膜中彼此相邻的两个非晶硅膜是第一非晶硅膜和第二非晶硅膜 堆叠在第一非晶硅膜上，第一非晶硅膜和第二非晶硅膜具有不同的特性值。

公开(公告)号：US20120307334A1

公开(公告)日：2012-12-06

申请号：US13483095

申请日：2012-05-30

申请人： Hidekazu NITTA ,  Makoto Ohkura ,  Takuo Kaitoh ,  Katsumi Matsumoto

发明人： Hidekazu NITTA ,  Makoto Ohkura ,  Takuo Kaitoh ,  Katsumi Matsumoto

IPC分类号： G02B26/02 ,  H01L33/08

CPC分类号： G02B26/085 ,  B81B3/0072 ,  B81B2201/045 ,  B81C2201/0167

摘要： In a movable shutter-system display device, a movable shutter includes an amorphous silicon film material which has a low residual stress and thus is stable. A display device includes a display panel comprising a first substrate and a second substrate. The display panel includes a plurality of pixels; each of the plurality of pixels includes a movable shutter including amorphous silicon and a driving circuit for driving the movable shutter; and the amorphous silicon included in the movable shutter is formed of at least two amorphous silicon films, and where any two amorphous silicon films adjacent to each other among the at least two amorphous silicon films are a first amorphous silicon film and a second amorphous silicon film stacked on the first amorphous silicon film, the first amorphous silicon film and the second amorphous silicon film have different characteristic values.

摘要翻译： 在可移动快门系统显示装置中，可移动遮板包括具有低残余应力并因此是稳定的非晶硅膜材料。 显示装置包括：显示面板，包括第一基板和第二基板。 显示面板包括多个像素; 所述多个像素中的每一个包括可移动快门，其包括非晶硅和用于驱动所述活动快门的驱动电路; 并且包括在可移动快门中的非晶硅由至少两个非晶硅膜形成，并且其中在至少两个非晶硅膜中彼此相邻的两个非晶硅膜是第一非晶硅膜和第二非晶硅膜 堆叠在第一非晶硅膜上，第一非晶硅膜和第二非晶硅膜具有不同的特性值。

公开(公告)号：US07180095B2

公开(公告)日：2007-02-20

申请号：US10780724

申请日：2004-02-19

申请人： Takahiro Kamo ,  Toshihiko Itoga ,  Takuo Kaitoh ,  Makoto Ohkura

发明人： Takahiro Kamo ,  Toshihiko Itoga ,  Takuo Kaitoh ,  Makoto Ohkura

IPC分类号： H01L29/15

CPC分类号： H01L29/4908 ,  H01L27/12 ,  H01L27/1214

摘要： In a display device including thin film transistors formed on an insulation substrate, the thin film transistor includes a semiconductor layer, a gate electrode and a gate insulation film which is interposed between the semiconductor layer and the gate electrode. The gate insulation film includes at least one layer of deposition film which is deposited by a deposition method, and the carbon concentration of the gate insulation film which is formed without interposing other deposition film deposited by a deposition method between the one deposition film and the semiconductor layer has the distribution in which the carbon concentration is smaller at a side close to the semiconductor layer than at a side remote from the semiconductor layer. Due to such a constitution, it is possible to obviate the elevation of a level of an interface of the insulation film with respect to a poly silicon layer and it is also possible to obviate an increase of fixed charges in the inside of the insulation film in the thin film transistor.

摘要翻译： 在包括形成在绝缘基板上的薄膜晶体管的显示装置中，薄膜晶体管包括半导体层，栅电极和栅极绝缘膜，其夹在半导体层和栅电极之间。 栅极绝缘膜包括通过沉积方法沉积的至少一层沉积膜，并且形成栅极绝缘膜的碳浓度，而不将其通过沉积方法沉积的其它沉积膜沉积在一个沉积膜和半导体之间 在半导体层附近的一侧的碳浓度比远离半导体层的一侧具有更小的分布。 由于这样的结构，可以避免绝缘膜相对于多晶硅层的界面的高度的上升，并且还可以避免绝缘膜内部的固定电荷的增加 薄膜晶体管。

公开(公告)号：US07388228B2

公开(公告)日：2008-06-17

申请号：US11174674

申请日：2005-07-06

申请人： Hideo Tanabe ,  Shigeo Shimomura ,  Makoto Ohkura ,  Masaaki Kurita ,  Yasukazu Kimura ,  Takao Nakamura

发明人： Hideo Tanabe ,  Shigeo Shimomura ,  Makoto Ohkura ,  Masaaki Kurita ,  Yasukazu Kimura ,  Takao Nakamura

IPC分类号： H01L21/84 ,  H01L29/76

CPC分类号： H01L27/1288 ,  G02F1/13454 ,  G02F1/136227 ,  G02F1/1368 ,  H01L27/1214 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78633

摘要： Thin film transistors for a display device each include a semiconductor layer made of polysilicon having a channel region, drain and source regions at both sides of the channel region and doped with impurity of high concentration, and an LDD region arranged either between the drain region and the channel region or between the source region and the channel region and doped with impurity of low concentration. An insulation film is formed over an upper surface of the semiconductor layer and has a film thickness which decreases in a step-like manner as it extends to the channel region, the LDD region, the drain and the source regions; and a gate electrode is formed over the channel region through the insulation film. Such a constitution can enhance the numerical aperture and can suppress the magnitude of stepped portions in a periphery of the thin film transistor.

摘要翻译： 用于显示装置的薄膜晶体管每个都包括由多晶硅制成的半导体层，该多晶硅具有沟道区，沟道区两侧的漏极和源极区，掺杂有高浓度的杂质;以及LDD区，其布置在漏极区和 沟道区域或源极区域和沟道区域之间，并掺杂低浓度的杂质。 在半导体层的上表面上形成绝缘膜，其厚度随其延伸到沟道区，LDD区，漏极和源极区而呈阶梯状减小; 并且通过绝缘膜形成在沟道区域上方的栅电极。 这种结构可以提高数值孔径并且可以抑制薄膜晶体管的周边中的阶梯部分的大小。

公开(公告)号：US07227186B2

公开(公告)日：2007-06-05

申请号：US11123496

申请日：2005-05-04

申请人： Takuo Tamura ,  Kiyoshi Ogata ,  Yoichi Takahara ,  Kazuhiko Horikoshi ,  Hironaru Yamaguchi ,  Makoto Ohkura ,  Hironobu Abe ,  Masakazu Saitou ,  Yoshinobu Kimura ,  Toshihiko Itoga

发明人： Takuo Tamura ,  Kiyoshi Ogata ,  Yoichi Takahara ,  Kazuhiko Horikoshi ,  Hironaru Yamaguchi ,  Makoto Ohkura ,  Hironobu Abe ,  Masakazu Saitou ,  Yoshinobu Kimura ,  Toshihiko Itoga

IPC分类号： H01L21/20

CPC分类号： H01L29/66757 ,  H01L29/78675 ,  Y10S438/969

摘要： An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.

摘要翻译： 激光照射多次非晶硅膜以使由多个晶粒构成的膜同时抑制邻接晶粒的边界处的突起的形成，以实现多晶硅薄膜晶体管，其至少部分地在其中 晶粒簇或至少两个晶粒的聚集体，在平面（111）中具有优选的取向，并且具有高电子迁移率为200cm 2 / Vs以上。

公开(公告)号：US20070041410A1

公开(公告)日：2007-02-22

申请号：US11588387

申请日：2006-10-27

申请人： Mikio Hongo ,  Sachio Uto ,  Mineo Nomoto ,  Toshihiko Nakata ,  Mutsuko Hatano ,  Shinya Yamaguchi ,  Makoto Ohkura

发明人： Mikio Hongo ,  Sachio Uto ,  Mineo Nomoto ,  Toshihiko Nakata ,  Mutsuko Hatano ,  Shinya Yamaguchi ,  Makoto Ohkura

IPC分类号： H01S3/10 ,  G02B27/10

CPC分类号： H01L21/02683 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757

摘要： Apparatus for fabricating a display device includes a stage capable of mounting an insulating substrate of the display device and moving the insulating substrate, linear scales which detect a position or moving distance of the substrate, a laser oscillator which generates continuous-waves laser light, a modulator which turns ON/OFF the continuous-wave laser light, a beam forming optic which shapes the continuous-wave laser light passing through the modulator into a linear or rectangular form, an objective lens which projects the at least one of the laser light on the insulating substrate so as to irradiate the insulating substrate with the laser light. The controller counts signals generated by the linear scales for every movement of the stage for a given distance, causes the modulator to turn the generated continuous-wave laser light in an ON state at time when a position of the insulating substrate on which the laser light irradiation is to be started reaches an area on which the laser light is projected, and causes the modulator to turn the generated continuous-wave laser light in an OFF state at another time.

摘要翻译： 用于制造显示装置的装置包括能够安装显示装置的绝缘基板并移动绝缘基板的台，检测基板的位置或移动距离的线性标尺，产生连续波激光的激光振荡器， 将连续波激光切换为ON / OFF的调制器，将通过调制器的连续波激光成形为直线或矩形的光束形成光学器件，将至少一个激光投射到的物镜 绝缘基板，以激光照射绝缘基板。 控制器对于给定距离的级的每次移动来对由线性标尺产生的信号进行计数，使得调制器将产生的连续波激光在其上的激光的绝缘基板的位置处于接通状态 照射开始到达投射激光的区域，并且使得调制器在另一时间将所产生的连续波激光转为OFF状态。

公开(公告)号：US20050242354A1

公开(公告)日：2005-11-03

申请号：US11174674

申请日：2005-07-06

申请人： Hideo Tanabe ,  Shigeo Shimomura ,  Makoto Ohkura ,  Masaaki Kurita ,  Yasukazu Kimura ,  Takao Nakamura

发明人： Hideo Tanabe ,  Shigeo Shimomura ,  Makoto Ohkura ,  Masaaki Kurita ,  Yasukazu Kimura ,  Takao Nakamura

IPC分类号： G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/76 ,  H01L29/786

CPC分类号： H01L27/1288 ,  G02F1/13454 ,  G02F1/136227 ,  G02F1/1368 ,  H01L27/1214 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78633

摘要： Thin film transistors for a display device each include a semiconductor layer made of polysilicon having a channel region, drain and source regions at both sides of the channel region and doped with impurity of high concentration, and an LDD region arranged either between the drain region and the channel region or between the source region and the channel region and doped with impurity of low concentration. An insulation film is formed over an upper surface of the semiconductor layer and has a film thickness which decreases in a step-like manner as it extends to the channel region, the LDD region, the drain and the source regions; and a gate electrode is formed over the channel region through the insulation film. Such a constitution can enhance the numerical aperture and can suppress the magnitude of stepped portions in a periphery of the thin film transistor.

摘要翻译： 用于显示装置的薄膜晶体管每个都包括由多晶硅制成的半导体层，该多晶硅具有沟道区，沟道区两侧的漏极和源极区，掺杂有高浓度的杂质;以及LDD区，其布置在漏极区和 沟道区域或源极区域和沟道区域之间，并掺杂低浓度的杂质。 在半导体层的上表面上形成绝缘膜，其厚度随其延伸到沟道区，LDD区，漏极和源极区而呈阶梯状减小; 并且通过绝缘膜形成在沟道区域上方的栅电极。 这种结构可以提高数值孔径并且可以抑制薄膜晶体管的周边中的阶梯部分的大小。

公开(公告)号：US06716688B2

公开(公告)日：2004-04-06

申请号：US10299218

申请日：2002-11-18

申请人： Takuo Tamura ,  Kiyoshi Ogata ,  Yoichi Takahara ,  Kazuhiko Horikoshi ,  Hironaru Yamaguchi ,  Makoto Ohkura ,  Hironobu Abe ,  Masakazu Saitou ,  Yoshinobu Kimura ,  Toshihiko Itoga

发明人： Takuo Tamura ,  Kiyoshi Ogata ,  Yoichi Takahara ,  Kazuhiko Horikoshi ,  Hironaru Yamaguchi ,  Makoto Ohkura ,  Hironobu Abe ,  Masakazu Saitou ,  Yoshinobu Kimura ,  Toshihiko Itoga

IPC分类号： H01L2184

CPC分类号： H01L29/66757 ,  H01L29/78675 ,  Y10S438/969

摘要： An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.

摘要翻译： 激光照射多次非晶硅膜以使由多个晶粒构成的膜同时抑制邻接晶粒的边界处的突起的形成，以实现多晶硅薄膜晶体管，其至少部分地在其中 晶粒簇或至少两个晶粒的聚集体，在平面（111）中具有优选的取向，并且具有200cm 2 / Vs以上的高电子迁移率。

公开(公告)号：US06670638B2

公开(公告)日：2003-12-30

申请号：US09793972

申请日：2001-02-28

申请人： Takuo Tamura ,  Kiyoshi Ogata ,  Yoichi Takahara ,  Hironaru Yamaguchi ,  Yoshinobu Kimura ,  Makoto Ohkura ,  Hironobu Abe ,  Shigeo Shimomura ,  Masakazu Saitou ,  Michiko Takahashi

发明人： Takuo Tamura ,  Kiyoshi Ogata ,  Yoichi Takahara ,  Hironaru Yamaguchi ,  Yoshinobu Kimura ,  Makoto Ohkura ,  Hironobu Abe ,  Shigeo Shimomura ,  Masakazu Saitou ,  Michiko Takahashi

IPC分类号： H01L2904

CPC分类号： H01L29/66757 ,  G02F1/13454 ,  G02F1/1368 ,  G02F2202/104 ,  H01L29/78675

摘要： Disclosed is a polysilicon film adapted for use in a liquid crystal display, and method of manufacturing such film. In manufacturing the film, a native oxide layer formed on a surface of an amorphous silicon film is completely removed by a hydrofluoric acid solution, followed by immersing in an H2O2 solution to newly form an extremely thin oxide layer, prior to a crystallizing processing performed by a laser beam irradiation. The crystallizing processing forms a polysilicon film formed of crystal grains Preferentially oriented on the (111) plane in a direction parallel to the substrate surface, an average crystal grain size being not larger than 300 nm, the standard deviation of the grain sizes being not larger than 30% of the average grain size, and the standard deviation of the roughness being not larger than 10% of the average grain size.

摘要翻译： 公开了适用于液晶显示器的多晶硅膜及其制造方法。 在制造膜时，通过氢氟酸溶液将形成在非晶硅膜表面上的天然氧化物层完全除去，随后在H 2 O 2溶液中浸渍以形成极薄的氧化物层，然后在结晶处理之前进行 激光束照射。 结晶处理形成由晶粒形成的多晶硅膜，在（111）面上沿着平行于基板表面的方向优先取向，平均晶粒尺寸不大于300nm，晶粒尺寸的标准偏差不大 超过平均粒径的30％，粗糙度的标准偏差不大于平均粒径的10％。

公开(公告)号：US4599133A

公开(公告)日：1986-07-08

申请号：US491544

申请日：1983-05-04

申请人： Masanobu Miyao ,  Makoto Ohkura ,  Iwao Takemoto ,  Masao Tamura

发明人： Masanobu Miyao ,  Makoto Ohkura ,  Iwao Takemoto ,  Masao Tamura

IPC分类号： C01B33/02 ,  C30B1/02 ,  C30B11/00 ,  C30B13/34 ,  C30B29/06 ,  H01L21/208 ,  H01L21/31 ,  C30B13/24

CPC分类号： C30B13/34 ,  C30B11/003 ,  Y10S117/904 ,  Y10S117/905

摘要： On a semiconductor substrate surface, a plurality of polycrystalline or amorphous silicon films and a plurality of insulator films which are substantially transparent to an irradiating energy beam and each of which has an opening are formed so as to be alternately stacked. Thereafter, the plurality of polycrystalline or amorphous silicon films are turned into a single crystal by irradiating them with the energy beam.

摘要翻译： 在半导体衬底表面上形成多个多晶或非晶硅膜以及对照射能量束基本透明并且每个具有开口的多个绝缘膜，以便交替堆叠。 此后，通过用能量束照射多个多晶或非晶硅膜将其变成单晶。