公开(公告)号：US4599133A

公开(公告)日：1986-07-08

申请号：US491544

申请日：1983-05-04

申请人： Masanobu Miyao ,  Makoto Ohkura ,  Iwao Takemoto ,  Masao Tamura

发明人： Masanobu Miyao ,  Makoto Ohkura ,  Iwao Takemoto ,  Masao Tamura

IPC分类号： C01B33/02 ,  C30B1/02 ,  C30B11/00 ,  C30B13/34 ,  C30B29/06 ,  H01L21/208 ,  H01L21/31 ,  C30B13/24

CPC分类号： C30B13/34 ,  C30B11/003 ,  Y10S117/904 ,  Y10S117/905

摘要： On a semiconductor substrate surface, a plurality of polycrystalline or amorphous silicon films and a plurality of insulator films which are substantially transparent to an irradiating energy beam and each of which has an opening are formed so as to be alternately stacked. Thereafter, the plurality of polycrystalline or amorphous silicon films are turned into a single crystal by irradiating them with the energy beam.

摘要翻译： 在半导体衬底表面上形成多个多晶或非晶硅膜以及对照射能量束基本透明并且每个具有开口的多个绝缘膜，以便交替堆叠。 此后，通过用能量束照射多个多晶或非晶硅膜将其变成单晶。

公开(公告)号：US4551742A

公开(公告)日：1985-11-05

申请号：US640570

申请日：1984-08-14

申请人： Iwao Takemoto ,  Shiya Ohba ,  Masakazu Aoki ,  Haruhisa Ando ,  Masaaki Nakai ,  Toshifumi Ozaki ,  Masao Tamura ,  Masanobu Miyao

发明人： Iwao Takemoto ,  Shiya Ohba ,  Masakazu Aoki ,  Haruhisa Ando ,  Masaaki Nakai ,  Toshifumi Ozaki ,  Masao Tamura ,  Masanobu Miyao

IPC分类号： H01L27/14 ,  H01L27/146 ,  H01L31/14 ,  H04N5/335 ,  H04N5/359 ,  H04N5/374 ,  H04N9/07

CPC分类号： H01L27/14654

摘要： A solid-state imaging device is provided with picture elements which are each composed of a photoelectric conversion element and a MOS transistor as a switching element and which are arranged in the form of a matrix. A scanning mechanism sequentially scans the picture elements to sequentially read out photoelectric conversion signals. To eliminate smear and reduce parasitic capacitance, a high-impurity-concentration diffusion layer serving as an output terminal of the MOS transistor constituting the picture element is formed on an insulator layer for isolating the elements.

摘要翻译： 固态成像装置具有由光电转换元件和MOS晶体管作为开关元件构成并以矩阵形式配置的像素。 扫描机构顺序地扫描像素以顺序地读出光电转换信号。 为了消除污迹并降低寄生电容，在用于隔离元件的绝缘体层上形成用作构成像素的MOS晶体管的输出端的高杂质浓度扩散层。

公开(公告)号：US4351674A

公开(公告)日：1982-09-28

申请号：US182825

申请日：1980-08-29

申请人： Isao Yoshida ,  Yasuo Wada ,  Masao Tamura ,  Masanobu Miyao ,  Makoto Ohkura ,  Nobuyoshi Natsuaki ,  Takashi Tokuyama

发明人： Isao Yoshida ,  Yasuo Wada ,  Masao Tamura ,  Masanobu Miyao ,  Makoto Ohkura ,  Nobuyoshi Natsuaki ,  Takashi Tokuyama

IPC分类号： H01L27/04 ,  H01L21/22 ,  H01L21/268 ,  H01L21/3215 ,  H01L21/822 ,  H01L29/78 ,  H01L21/265 ,  H01L21/263

CPC分类号： H01L21/268 ,  H01L21/32155 ,  Y10S148/091

摘要： A region containing a high concentration of impurity and a desired region adjacent thereto are fused by irradiation with a laser beam, to diffuse the impurity in the lateral direction into the desired region and to render the desired region a low resistance.Since this method can execute only the lateral diffusion of the impurity without affecting other portions, it is very useful for forming a high breakdown voltage MIS-FET, a resistor etc.

摘要翻译： 含有高浓度杂质的区域和与其相邻的期望区域通过用激光束照射而熔化，从而将横向杂质扩散到所需区域并使所需区域呈现低电阻。 由于该方法只能执行杂质的横向扩散而不影响其它部分，因此形成高击穿电压MIS-FET，电阻等非常有用。

公开(公告)号：US4565584A

公开(公告)日：1986-01-21

申请号：US460801

申请日：1983-01-25

申请人： Masao Tamura ,  Makoto Ohkura ,  Masanobu Miyao ,  Nobuyoshi Natsuaki ,  Naotsugu Yoshihiro ,  Takashi Tokuyama ,  Hiroshi Ishihara

发明人： Masao Tamura ,  Makoto Ohkura ,  Masanobu Miyao ,  Nobuyoshi Natsuaki ,  Naotsugu Yoshihiro ,  Takashi Tokuyama ,  Hiroshi Ishihara

IPC分类号： H01L21/20 ,  C30B1/02 ,  C30B1/08 ,  H01L21/31 ,  H01L21/263 ,  H01L21/205

CPC分类号： C30B1/08 ,  C30B1/023 ,  Y10S148/003 ,  Y10S148/09 ,  Y10S148/123 ,  Y10S438/909

摘要： An amorphous or polycrystalline film which continuously covers the exposed surface of a single crystal substrate and an insulating film, is deposited in ultra-high vacuum and then heat-treated. The film is subjected to solid phase epitaxial growth at a temperature far lower than in prior-art methods, whereby a single crystal film is formed.

摘要翻译： 连续覆盖单晶基板和绝缘膜的暴露表面的非晶或多晶膜沉积在超高真空中，然后进行热处理。 在远低于现有技术方法的温度下对该膜进行固相外延生长，从而形成单晶膜。

公开(公告)号：US4498951A

公开(公告)日：1985-02-12

申请号：US423206

申请日：1982-09-24

申请人： Masao Tamura ,  Naotsugu Yoshihiro ,  Nobuyoshi Natsuaki ,  Masanobu Miyao ,  Makoto Ohkura ,  Hideo Sunami ,  Takashi Tokuyama

发明人： Masao Tamura ,  Naotsugu Yoshihiro ,  Nobuyoshi Natsuaki ,  Masanobu Miyao ,  Makoto Ohkura ,  Hideo Sunami ,  Takashi Tokuyama

IPC分类号： H01L21/31 ,  H01L21/20 ,  H01L21/263 ,  H01L21/268 ,  C30B25/04

CPC分类号： H01L21/02381 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02675 ,  H01L21/2636 ,  H01L21/268 ,  Y10S117/904 ,  Y10S117/905 ,  Y10S148/003 ,  Y10S148/09 ,  Y10S148/123 ,  Y10S438/969

摘要： The whole surface of a polycrystalline or amorphous semiconductor film deposited so as to continuously cover the surface of a single-crystal substrate and an insulating film is irradiated with a laser beam or electron beam, thereby to selectively melt only those parts of the polycrystalline or amorphous semiconductor film which overlie the insulating film. Thus, a single-crystal semiconductor film is formed only the insular insulating film formed on the single-crystal substrate.

摘要翻译： 用激光束或电子束照射沉积以连续覆盖单晶衬底和绝缘膜的表面的多晶或非晶半导体膜的整个表面，从而仅选择地熔化多晶或非晶 覆盖绝缘膜的半导体膜。 因此，单晶半导体膜仅形成在单晶衬底上形成的绝缘膜。

公开(公告)号：US4394191A

公开(公告)日：1983-07-19

申请号：US217224

申请日：1980-12-17

申请人： Yasuo Wada ,  Hiroo Usui ,  Makoto Ohkura ,  Masanobu Miyao ,  Masao Tamura ,  Takashi Tokuyama

发明人： Yasuo Wada ,  Hiroo Usui ,  Makoto Ohkura ,  Masanobu Miyao ,  Masao Tamura ,  Takashi Tokuyama

IPC分类号： C01B33/02 ,  C23C16/24 ,  H01L21/20 ,  H01L21/268 ,  H01L29/04 ,  H01L29/36 ,  H01L21/263 ,  B05D3/06

CPC分类号： H01L21/268 ,  H01L29/04 ,  H01L29/36 ,  Y10S438/934

摘要： A polycrystalline silicon film is implanted with an impurity in large amounts and is heated to be annealed, whereupon it is irradiated with a laser beam to be annealed.Thus, a polycrystalline silicon film of very low resistivity consisting of a second layer whose activated impurity concentration is equal to or below a solid solubility and a first layer whose activated impurity concentration is above the solid solubility is formed.

摘要翻译： 多晶硅膜被大量注入杂质，并加热退火，然后用待退火的激光束进行照射。 因此，形成具有活性杂质浓度等于或低于固体溶解度的第二层和活性杂质浓度高于固溶度的第一层的非常低电阻率的多晶硅膜。

公开(公告)号：US4751557A

公开(公告)日：1988-06-14

申请号：US904397

申请日：1986-09-08

申请人： Hideo Sunami ,  Tokuo Kure ,  Yoshifumi Kawamoto ,  Masao Tamura ,  Masanobu Miyao

发明人： Hideo Sunami ,  Tokuo Kure ,  Yoshifumi Kawamoto ,  Masao Tamura ,  Masanobu Miyao

IPC分类号： G11C11/401 ,  H01L21/033 ,  H01L21/763 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/10 ,  H01L27/108 ,  H01L29/78 ,  G11C11/40

CPC分类号： H01L21/763 ,  H01L21/033 ,  H01L27/10841

摘要： A semiconductor memory wherein a part of each capacitor is formed on side walls of an island region surrounded with a recess formed in a semiconductor substrate, and the island region and other regions are electrically isolated by the recess.

摘要翻译： 一种半导体存储器，其中每个电容器的一部分形成在由形成在半导体衬底中的凹部包围的岛状区域的侧壁上，并且岛状区域和其它区域通过凹部电隔离。

公开(公告)号：US5357131A

公开(公告)日：1994-10-18

申请号：US93033

申请日：1993-07-19

申请人： Hideo Sunami ,  Tokuo Kure ,  Yoshifumi Kawamoto ,  Masao Tamura ,  Masanobu Miyao

发明人： Hideo Sunami ,  Tokuo Kure ,  Yoshifumi Kawamoto ,  Masao Tamura ,  Masanobu Miyao

IPC分类号： H01L21/033 ,  H01L21/308 ,  H01L27/108 ,  H01L27/12

CPC分类号： H01L27/1203 ,  H01L21/0337 ,  H01L21/3086 ,  H01L27/1082 ,  H01L27/10832 ,  H01L27/10841

摘要： A semiconductor memory wherein a part of each capacitor is formed on side walls of an island region surrounded with a recess formed in a semiconductor substrate, and the island region and other regions are electrically isolated by the recess.

摘要翻译： 一种半导体存储器，其中每个电容器的一部分形成在由形成在半导体衬底中的凹部包围的岛状区域的侧壁上，并且岛状区域和其它区域通过凹部电隔离。

公开(公告)号：US4984030A

公开(公告)日：1991-01-08

申请号：US201100

申请日：1988-05-31

申请人： Hideo Sunami ,  Tokuo Kure ,  Yoshifumi Kawamoto ,  Masao Tamura ,  Masanobu Miyao

发明人： Hideo Sunami ,  Tokuo Kure ,  Yoshifumi Kawamoto ,  Masao Tamura ,  Masanobu Miyao

IPC分类号： G11C11/401 ,  H01L21/033 ,  H01L21/763 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/10 ,  H01L27/108 ,  H01L29/78

CPC分类号： H01L21/763 ,  H01L21/033 ,  H01L27/10841

摘要： A semiconductor memory wherein a part of each capacitor is formed on side walls of an island region surrounded with a recess formed in a semiconductor substrate, and the island region and other regions are electrically isolated by the recess.

公开(公告)号：US4808546A

公开(公告)日：1989-02-28

申请号：US9476

申请日：1987-02-02

申请人： Masahiro Moniwa ,  Masanobu Miyao ,  Shoji Shukuri ,  Eiichi Murakami ,  Terunori Warabisako ,  Masao Tamura ,  Nobuyoshi Natsuaki ,  Kiyonori Ohyu ,  Tadashi Suzuki ,  Yuuichi Madokoro ,  Yasuo Wada

发明人： Masahiro Moniwa ,  Masanobu Miyao ,  Shoji Shukuri ,  Eiichi Murakami ,  Terunori Warabisako ,  Masao Tamura ,  Nobuyoshi Natsuaki ,  Kiyonori Ohyu ,  Tadashi Suzuki ,  Yuuichi Madokoro ,  Yasuo Wada

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/762 ,  H01L21/265 ,  H01L21/26

CPC分类号： H01L29/66772 ,  H01L21/2022 ,  H01L21/76248 ,  Y10S148/003 ,  Y10S148/048 ,  Y10S148/09 ,  Y10S148/154

摘要： Of an amorphous Si film, a region to be formed into a lowly doped region such as the channel region of an MOS transistor is covered with a mask and an uncovered region is doped with an impurity. After this, the amorphous Si film is annealed and turned to signal crystal through solid phase epitaxial growth, and the mask itself is used as the electrode of a semiconductor device. By this impurity doping, a large-sized single-crystal Si film can be formed, and the impurity doping can be conducted in self-alignment with the electrode formation to produce a highly integrated semiconductor circuit.

摘要翻译： 在非晶Si膜中，用掩模覆盖要形成诸如MOS晶体管的沟道区域的低掺杂区域的区域，并且未覆盖区域掺杂有杂质。 之后，通过固相外延生长使非晶Si膜退火并转向信号晶体，并且将掩模本身用作半导体器件的电极。 通过这种杂质掺杂，可以形成大尺寸的单晶Si膜，并且杂质掺杂可以与电极形成自对准，以产生高度集成的半导体电路。