公开(公告)号：US07112760B2

公开(公告)日：2006-09-26

申请号：US10456741

申请日：2003-06-09

申请人： Hiromi Ishikawa ,  Akinori Harada ,  Kazuhiko Nagano ,  Yoji Okazaki ,  Takeshi Fujii ,  Hideo Yamanaka ,  Hiromitsu Yamakawa

发明人： Hiromi Ishikawa ,  Akinori Harada ,  Kazuhiko Nagano ,  Yoji Okazaki ,  Takeshi Fujii ,  Hideo Yamanaka ,  Hiromitsu Yamakawa

IPC分类号： B23K26/00

CPC分类号： B23K26/0608 ,  B23K26/0604 ,  C23C14/28 ,  C23C16/483

摘要： A laser annealer has a laser light source with at least one GaN-type semiconductor laser and is configured so as to form emission points that emit laser beams having a wavelength of 350 to 450 nm, and a scanning device for scanning an annealing surface with the laser beams. The laser annealer may have a spatial light modulator for modulating the laser beams, and in which pixel portions whose light modulating states change in accordance with control signals are arranged on a substrate. The invention is applied to a laser thin-film forming apparatus. The apparatus has a laser source that has at least one semiconductor laser and is configured so as to form emission points, and an optical system for focusing laser beams into a single beam in the width direction of a substrate.

公开(公告)号：US20050282306A1

公开(公告)日：2005-12-22

申请号：US11196967

申请日：2005-08-04

申请人： Hideo Yamanaka

发明人： Hideo Yamanaka

IPC分类号： H01L27/14 ,  H01L21/00 ,  H01L21/46 ,  H01L23/00 ,  H01L27/146 ,  H01L27/148

CPC分类号： H01L27/14618 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14692 ,  H01L27/14837 ,  H01L27/14843 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05548 ,  H01L2224/05624 ,  H01L2224/16225 ,  H01L2224/45144 ,  H01L2924/00014 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/05099

摘要： A method of production of an ultra-thin semiconductor chip and an ultra-thin back-illuminated solid-state image pickup device utilizing a semiconductor layer formed on a support substrate via an insulating layer to improve separation performance of a semiconductor layer from a support substrate and thereby improve the productivity and quality-including the steps of forming a base comprised of a support substrate on which a porous layer or other peeling layer, a second semiconductor layer, an insulating layer, and a first semiconductor layer are stacked; forming solid-state image pickup sensor units and projecting connection electrodes to be connected to the solid-state image pickup sensor units in the first semiconductor layer; forming scores reaching the peeling layer along separation lines for separation into individual solid-state image pickup devices; forming a resin protective film filling the scores, covering the first semiconductor layer, and exposing the connection electrodes; peeling off the support substrate via the peeling layer as an interface; and cutting from the second semiconductor layer side along the resin protective film filled in the scores to separate individual solid-state image pickup devices.

摘要翻译： 一种制造超薄半导体芯片的方法以及利用通过绝缘层形成在支撑基板上的半导体层的超薄背照式固态图像拾取装置，以改善半导体层与支撑基板的分离性能 从而提高生产率和质量 - 包括形成由多孔层或其它剥离层，第二半导体层，绝缘层和第一半导体层堆叠在其上的支撑基板构成的基底的步骤; 形成固态摄像传感器单元和连接到第一半导体层中的固态摄像传感器单元的投影连接电极; 沿着分离线形成到达剥离层的分数，以分离成单独的固态图像拾取装置; 形成填充分数的树脂保护膜，覆盖第一半导体层，暴露连接电极; 通过剥离层作为界面剥离支撑基板; 以及沿着填充了分数的树脂保护膜从第二半导体层侧切割以分离单独的固态图像拾取装置。

公开(公告)号：US20050173720A1

公开(公告)日：2005-08-11

申请号：US11104961

申请日：2005-04-13

申请人： Hideo Yamanaka ,  Kikuo Kaise

发明人： Hideo Yamanaka ,  Kikuo Kaise

IPC分类号： G02B3/00 ,  G02F1/1335 ,  H01L29/22

CPC分类号： G02B3/0031 ,  G02B3/0056 ,  G02F1/133526 ,  G02F2001/133567 ,  G02F2202/023 ,  Y10S359/90

摘要： A method of producing a microlens array includes a patterning step of forming a first optical resin layer having a first refractive index on a transparent substrate and forming a plurality of microlens planes arrayed in a two-dimensional pattern on the front surface of the first optical resin layer; a planarizing step of forming a planarized second optical resin layer; a joining step of providing a support layer on which a transparent protective film is previously formed; and a removing step of removing the support layer in such a manner that only the protective film remains on the second optical resin layer. The planarizing step is performed by filling irregularities of the microlens planes with a resin having a second refractive index and planarizing the front surface, opposed to the microlens planes, of the resin, to form the planarized second optical resin layer, and the joining step is performed by joining the support layer to the planarized second optical resin layer. With this method, a microlens array excellent in surface accuracy and flatness can be produced without the need of provision of a support layer made from glass.

公开(公告)号：US20050074954A1

公开(公告)日：2005-04-07

申请号：US10680548

申请日：2003-10-07

申请人： Hideo Yamanaka

发明人： Hideo Yamanaka

IPC分类号： H01L27/14 ,  H01L21/00 ,  H01L21/46 ,  H01L23/00 ,  H01L27/146 ,  H01L27/148

CPC分类号： H01L27/14618 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14692 ,  H01L27/14837 ,  H01L27/14843 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05548 ,  H01L2224/05624 ,  H01L2224/16225 ,  H01L2224/45144 ,  H01L2924/00014 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/05099

摘要： A method for producing an ultra-thin semiconductor chip and an ultra-thin back-illuminated solid-state image pickup device utilizing a semiconductor layer formed on a support substrate via an insulating layer to improve separation performance of a semiconductor layer from a support substrate and thereby improve the productivity and quality. The method uses two porous peeling layers on opposite sides of a substrate to produce an ultra-thin substrate.

摘要翻译： 一种用于制造超薄半导体芯片的方法和利用经由绝缘层形成在支撑基板上的半导体层的超薄背照式固态图像拾取装置，以改善半导体层与支撑基板的分离性能，以及 从而提高生产力和质量。 该方法在衬底的相对侧上使用两个多孔剥离层以产生超薄衬底。

公开(公告)号：US06825070B2

公开(公告)日：2004-11-30

申请号：US10301839

申请日：2002-11-22

申请人： Hideo Yamanaka ,  Hisayoshi Yamoto ,  Yuichi Satou ,  Hajime Yagi

发明人： Hideo Yamanaka ,  Hisayoshi Yamoto ,  Yuichi Satou ,  Hajime Yagi

IPC分类号： H01L2136

CPC分类号： H01L27/1222 ,  G02F1/13454 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/66772 ,  H01L29/78621 ,  H01L29/78645 ,  H01L29/78648

摘要： A single crystal silicon is graphoepitaxially grown using a step formed on a substrate as a seed by a catalyst process, and the obtained single crystal silicon layer is used for a dual gate type MOSTFT in an electro-optical apparatus such as a display section of a peripheral driving circuit integration type LCD. A single crystal silicon thin film having high electron/hole mobility is formed into a uniform film at a relatively low temperature, which enables the manufacturing of an active matrix substrate incorporated with a high-performance driver which can be used in a TFT display.

摘要翻译： 使用通过催化剂工艺在作为晶种的基板上形成台阶的方法将单晶硅生长，并将得到的单晶硅层用于诸如显示部分的电光装置中的双栅型MOSTFT 外围驱动电路集成型LCD。 具有高电子/空穴迁移率的单晶硅薄膜在相对较低的温度下形成均匀的膜，这使得能够制造掺入可用于TFT显示器的高性能驱动器的有源矩阵基板。

公开(公告)号：US06492190B2

公开(公告)日：2002-12-10

申请号：US09798832

申请日：2001-03-02

申请人： Hideo Yamanaka ,  Hisayoshi Yamoto ,  Yuuichi Sato ,  Hajime Yagi

发明人： Hideo Yamanaka ,  Hisayoshi Yamoto ,  Yuuichi Sato ,  Hajime Yagi

IPC分类号： H01L2100

CPC分类号： C30B13/00 ,  C30B29/06 ,  G02F1/13454 ,  H01L21/02532 ,  H01L21/02625 ,  H01L21/02628 ,  H01L29/42384 ,  H01L29/78603 ,  H01L29/78609 ,  H01L29/78621 ,  H01L29/78648

摘要： A single-crystal silicon layer is formed by graphoepitaxy from a low-melting-point metal layer which contains dissolved polycrystalline or amorphous silicon, or from a melt of a silicon-containing low-melting-point metal, using step differences formed on a substrate as a seed for the epitaxial growth. This single-crystal silicon layer is used as dual-gate MOSTFTS, or bottom-gate MOSTFTS, of an electrooptical device such as an LCD integrating a display section and a peripheral-driving-circuit section. This process enables production of a uniform single-crystal silicon thin-film having high electron/hole mobility at a relatively low temperature. The display section includes LDD-nMOSTFTs or pMOSTFTs having high switching characteristics and a low leakage current. The peripheral-driving-circuit section includes cMOSTFTs, nMOSTFTs, pMOSTFTs, or a combination thereof, having high driving ability.

摘要翻译： 单晶硅层通过使用含有溶解的多晶或非晶硅的低熔点金属层或从含硅低熔点金属的熔体利用在基板上形成的台阶差而进行的图案形成 作为外延生长的种子。 该单晶硅层用作诸如集成显示部分和外围驱动电路部分的LCD的电光器件的双栅MOSTFTS或底栅MOSTFTS。 该方法能够在相对低的温度下生产具有高电子/空穴迁移率的均匀的单晶硅薄膜。 显示部分包括具有高开关特性和低漏电流的LDD-nMOSTFT或pMOSTFT。 外围驱动电路部分包括具有高驱动能力的cMOSTFT，nMOSTFT，pMOSTFT或其组合。

公开(公告)号：US06346718B1

公开(公告)日：2002-02-12

申请号：US09413497

申请日：1999-10-06

申请人： Hideo Yamanaka ,  Hisayoshi Yamoto ,  Yuichi Satou ,  Hajime Yagi

发明人： Hideo Yamanaka ,  Hisayoshi Yamoto ,  Yuichi Satou ,  Hajime Yagi

IPC分类号： H01L2974

CPC分类号： H01L29/6678 ,  G02F1/13454 ,  H01L27/12 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78648 ,  H01L29/78654

摘要： An electro-optic device, such as an LCD, includes a display unit and a peripheral drive circuit unit on a single substrate. A gate comprising a gate electrode and gate insulation film is formed on a surface of the substrate. A layer of a substance having good lattice compatibility with monocrystalline silicon is formed over the gate insulation film. A layer of monocrystalline silicon is formed over the substance layer. Monocrystalline silicon is heteroepitaxially grown by catalytic CVD or the like using a crystalline sapphire film formed on the substrate to form the monocrystalline silicon layer. The monocrystalline silicon layer is used as a dual gate MOSTFT of the electro-optic device.

摘要翻译： 诸如LCD的电光装置在单个基板上包括显示单元和外围驱动电路单元。 在基板的表面上形成包括栅电极和栅极绝缘膜的栅极。 在栅极绝缘膜上形成与单晶硅具有良好晶格相容性的物质层。 在物质层上形成一层单晶硅。 单晶硅通过催化CVD等异质外延生长，使用形成在基板上的结晶蓝宝石膜形成单晶硅层。 单晶硅层用作电光器件的双栅MOSTFT。

公开(公告)号：US5835179A

公开(公告)日：1998-11-10

申请号：US919818

申请日：1997-08-29

申请人： Hideo Yamanaka

发明人： Hideo Yamanaka

IPC分类号： G09F9/00 ,  G02F1/133 ,  G02F1/1335 ,  G02F1/1333

CPC分类号： G02F1/133385 ,  G02F1/1335

摘要： A liquid crystal display for a projector, including a pair of substrates, a liquid crystal sealed in a space defined between the pair of substrates, and a translucent radiating plate mounted on at least one of the pair of substrates through a translucent adhesive. With this configuration, heat generated in the liquid crystal display can be efficiently dissipated to the outside with a simple structure. Further, degradation of a displayed image quality due to variations in cell gap can be prevented.

摘要翻译： 一种用于投影仪的液晶显示器，包括一对基板，密封在一对基板之间的空间中的液晶和通过半透明粘合剂安装在该对基板中的至少一个基板上的半透明散热板。 利用这种结构，可以以简单的结构将在液晶显示器中产生的热量有效地散发到外部。 此外，可以防止由于单元间隙的变化而导致的显示图像质量的劣化。

公开(公告)号：US5641714A

公开(公告)日：1997-06-24

申请号：US585776

申请日：1996-01-16

申请人： Hideo Yamanaka

发明人： Hideo Yamanaka

IPC分类号： H01L21/66 ,  H01L21/301 ,  H01L21/304 ,  H01L21/78 ,  H01L23/544 ,  H01L21/302

CPC分类号： H01L21/6836 ,  H01L21/78 ,  H01L23/544 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68386 ,  H01L2223/54473 ,  H01L2924/0002 ,  Y10S148/028 ,  Y10S438/977

摘要： According to the present invention, a method of manufacturing members, with a plurality of members being formed together on a single substrate and the substrate being cut in such a manner as to be divided into individual members after a characteristic evaluation of the members is carried out, comprises the steps of, carrying out the evaluation of the characteristics and applying ink marks of a prescribed height to surfaces of members deemed to have been defective, affixing a protective tape having an adhesive layer of a thickness equal to or greater than the height of the ink marks, to the surface of the substrate and cutting the substrate in such a manner as to be divided into individual members after a lower surface of the substrate has been ground or polished.

摘要翻译： 根据本发明，一种制造构件的方法，其中在单个基板上一起形成多个构件，并且在构件的特征评估之后进行切割以分割成单个构件的基板 包括以下步骤：对被认为是有缺陷的部件的表面进行特性评价，并将规定高度的墨标记施加到表面上，将具有厚度等于或大于 油墨标记到基板的表面上，并且在基板的下表面被研磨或抛光之后以这样的方式切割成单独的构件。

公开(公告)号：US4771217A

公开(公告)日：1988-09-13

申请号：US30057

申请日：1987-03-25

申请人： Hideo Yamanaka

发明人： Hideo Yamanaka

IPC分类号： H03K17/66 ,  H04N3/22 ,  H04N3/227 ,  H01J29/54

CPC分类号： H04N3/227 ,  H03K17/661

摘要： A deflection current from a vertical deflection output circuit is supplied to a series circuit of a vertical deflection coil and a capacitor. A pair of transistors are coupled to a DC voltage source in a complementary arrangement. The bases of these transistors are coupled to a slidable end of a variable resistor coupled to the DC voltage source, respectively through constant voltage elements, which are coupled to each other in the opposite directions. The node of these two transistors is coupled to the node of the deflection coil and the capacitor. As the position of the slidable end of the variable resistor is moved away from the center, one transistor of the pair becomes conductive. With this arrangement, a deflection current free of ripple components can be supplied to the deflection coil in order to adjust the vertical position of an image on the screen of a CRT.

摘要翻译： 来自垂直偏转输出电路的偏转电流被提供给垂直偏转线圈和电容器的串联电路。 一对晶体管以互补的布置耦合到DC电压源。 这些晶体管的基极分别通过恒定电压元件耦合到耦合到DC电压源的可变电阻器的可滑动端，所述恒定电压元件在相反方向上彼此耦合。 这两个晶体管的节点耦合到偏转线圈和电容器的节点。 随着可变电阻器的可滑动端的位置离开中心，该对的一个晶体管变得导通。 利用这种布置，可以向偏转线圈提供没有纹波分量的偏转电流，以便调节CRT屏幕上的图像的垂直位置。