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    Cleaning agent for a semiconductor device and a method of manufacturing a semiconductor device
    1.
    发明授权
    Cleaning agent for a semiconductor device and a method of manufacturing a semiconductor device 失效
    半导体装置用清洗剂及半导体装置的制造方法

    公开(公告)号：US06462005B1

    公开(公告)日：2002-10-08

    申请号：US08369215

    申请日：1995-01-05

    申请人： Hideto Gotoh ,  Tetsuo Aoyama ,  Rieko Nakano ,  Hideki Fukuda

    发明人： Hideto Gotoh ,  Tetsuo Aoyama ,  Rieko Nakano ,  Hideki Fukuda

    IPC分类号： C11D162

    CPC分类号： H01L21/02071 ,  G03F7/425 ,  H01L21/02052

    摘要： A cleaning agent for use in the manufacture of a semiconductor device comprising an aqueous solution containing a quarternary ammonium salt and a fluoro compound, or an aqueous solution containing a quarternary ammonium salt and a fluoro compound, as well as an organic solvent selected from the group consisting of amides, lactones, nitriles, alcohols and esters. In the semiconductor device manufacturing process, after forming a mask with a photoresist, a wiring structure is formed by dry etching of a conductive layer, wherein a protecting deposition film has been formed on side walls of the conductive layer. Use of the cleaning agent enables the protecting deposition film to be removed in a highly reliable manner with the surface of the conductive layer being decontaminated and cleaned such that no corrosion of the conductive layer occurs.

    摘要翻译： 一种用于制造半导体器件的清洁剂，其包含含有季铵盐和氟化合物的水溶液，或含有季铵盐和氟化合物的水溶液，以及选自下组的有机溶剂 由酰胺，内酯，腈，醇和酯组成。 在半导体器件制造方法中，在用光致抗蚀剂形成掩模之后，通过干蚀刻导电层形成布线结构，其中在导电层的侧壁上形成保护沉积膜。 使用清洁剂能够以高度可靠的方式去除保护性沉积膜，同时导电层的表面被净化和清洁，使得不会发生导电层的腐蚀。

    Stripping and cleaning agent for removing dry-etching and photoresist residues from a semiconductor substrate, and a method for forming a line pattern using the stripping and cleaning agent
    3.
    发明授权
    Stripping and cleaning agent for removing dry-etching and photoresist residues from a semiconductor substrate, and a method for forming a line pattern using the stripping and cleaning agent 失效
    用于从半导体衬底去除干蚀刻和光致抗蚀剂残留物的剥离和清洁剂，以及使用剥离和清洁剂形成线图案的方法

    公开(公告)号：US5630904A

    公开(公告)日：1997-05-20

    申请号：US410726

    申请日：1995-03-27

    申请人： Tetsuo Aoyama ,  Rieko Nakano ,  Akira Ishihama ,  Koichiro Adachi

    发明人： Tetsuo Aoyama ,  Rieko Nakano ,  Akira Ishihama ,  Koichiro Adachi

    IPC分类号： G03F7/42 ,  H01L21/02 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  C09K13/00

    CPC分类号： H01L21/02071 ,  G03F7/422 ,  G03F7/425 ,  H01L21/02063 ,  H01L21/32138 ,  Y10S438/963

    摘要： Stripping and cleaning agent for removing dry-etching photoresist residues, and a method for forming an aluminum based line pattern using the stripping and cleaning agent. The stripping and cleaning agent contains (a) from 5 to 50% by weight of an organocarboxlic ammonium salt or an amine carboxylate, represented by the formula [R.sup.1 ]m[COONH.sub.p (R.sup.2)q]n, where R.sup.1 is hydrogen, or an alkyl or aryl group having from 1 to 18 carbon atoms; R.sup.2 is hydrogen, or an alkyl group having from 1 to 4 carbon atoms; m and n independently are integers of from 1 to 4, p is integer of from 1 to 4, q is integer of from 1 to 3, and p+q=4 and (b) from 0.5 to 15% by weight of a fluorine compound. The inventive method is advantageously applied to treating a dry-etched semiconductor substrate with the stripping and cleaning agent. The semiconductor substrate comprises a semiconductor wafer having thereon a conductive layer containing aluminum. The conductive layer is dry-etched through a patterned photoresist mask to form a wiring body having etched side walls. The dry etching forms a side wall protection film on the side walls. In accordance with the inventive method, the side wall protection film and other resist residues are completely released without corroding the wiring body.

    摘要翻译： 用于去除干蚀刻光刻胶残渣的剥离和清洁剂，以及使用剥离和清洁剂形成铝基线图案的方法。 剥离剂和清洁剂含有（a）5-50重量％的由式[R1] m [COONHp（R2）q] n表示的有机碳铵铵盐或胺羧酸盐，其中R 1是氢，或 具有1至18个碳原子的烷基或芳基; R2是氢或具有1至4个碳原子的烷基; m和n独立地为1至4的整数，p为1至4的整数，q为1至3的整数，p + q = 4和（b）0.5至15重量％的氟 复合。 本发明的方法有利地应用于用剥离和清洁剂处理干蚀刻的半导体衬底。 半导体衬底包括其上具有含有铝的导电层的半导体晶片。 通过图案化的光致抗蚀剂掩模对导电层进行干蚀刻，以形成具有蚀刻侧壁的布线体。 干蚀刻在侧壁上形成侧壁保护膜。 根据本发明的方法，侧壁保护膜和其它抗蚀剂残留物完全释放而不会腐蚀布线体。