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1.发明授权
公开(公告)号：US5656404A
公开(公告)日：1997-08-12
申请号：US554394
申请日：1995-11-06
CPC分类号： G03G5/08221 , G03G5/08235
摘要： A light receiving member having a light receiving layer comprising a photoconductive layer and a surface layer disposed on a conductive substrate, wherein the photoconductive layer comprises, from the side of the substrate, a first photoconductive layer constituted by an amorphous material containing silicon atoms as a matrix, carbon atoms, hydrogen atoms and fluorine atoms, and a second photoconductive layer constituted by an amorphous material containing silicon atoms as a matrix, and at least one kind of atoms selected from hydrogen atoms and fluorine atoms, wherein the content of said fluorine atoms in the first photoconductive layer is from 1 to 95 atomic ppm based on the content of said silicon atoms.
摘要翻译： 一种具有光接收层的光接收元件，该光接收层包括光电导层和设置在导电基底上的表面层，其中该光电导层包括从该基片一侧的第一光电导层，该第一光电导层由含有硅原子的非晶态材料构成 基质，碳原子，氢原子和氟原子，以及由含有硅原子作为基体的非晶质材料构成的第二光电导层，以及选自氢原子和氟原子的至少一种原子，其中所述氟原子的含量 在第一光电导层中，基于所述硅原子的含量为1至95原子ppm。
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公开(公告)号：US5433790A
公开(公告)日：1995-07-18
申请号：US344610
申请日：1994-11-18
申请人： Hiroaki Niino , Tetsuya Takei , Ryuji Okamura
发明人： Hiroaki Niino , Tetsuya Takei , Ryuji Okamura
IPC分类号： C23C16/50 , C23C16/511 , G03G5/08 , H01J37/32 , H01L21/205 , H05H1/46 , C23C16/30
CPC分类号： C23C16/511 , H01J37/32192 , H01J37/32238
摘要： A deposit film forming apparatus is disclosed. Cylindrical substrates are disposed within a reaction vessel to be substantially sealed so as to surround a discharge space, and microwave introducing means is provided to form a microwave discharge plasma containing a reactant arising from a source gas and contributing to the formation of film, apply the voltage to an electrode provided on said discharge space, and form a deposit film on a surface of said substrate, characterized in that said microwave introducing means except for at least a microwave introducing dielectric window is constituted of two areas made of mutually different materials, a first area for transmitting the microwave is composed of a metal, and a second area in contact with the plasma is composed of a dielectric of which the product of a dielectric constant (.epsilon.) and a dielectric loss tangent (tan .delta.) at a frequency of used microwave is equal to or less than 2.times.10.sup.-2.
摘要翻译： 公开了一种沉积膜形成装置。 圆柱形基板设置在反应容器内，以基本上密封以包围放电空间，并且提供微波引入装置以形成包含源气体产生的反应物并有助于膜形成的微波放电等离子体， 电压施加到设置在所述放电空间上的电极，并且在所述衬底的表面上形成沉积膜，其特征在于除了至少微波引入电介质窗口之外的所述微波导入装置由相互不同的材料制成的两个区域构成， 用于传输微波的第一区域由金属组成，并且与等离子体接触的第二区域由电介质组成，介电常数（ε）和介电损耗角正切（tanδ）的乘积频率为 使用的微波等于或小于2×10-2。
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3.发明授权Microwave plasma CVD apparatus with a deposition chamber having a circumferential wall comprising a curved moving substrate web and a microwave applicator means having a specific dielectric member on the exterior thereof 失效具有沉积室的微波等离子体CVD装置，其具有包括弯曲移动衬底腹板的周向壁和在其外部具有特定电介质构件的微波施加器装置
公开(公告)号：US5514217A
公开(公告)日：1996-05-07
申请号：US261655
申请日：1994-06-07
申请人： Hiroaki Niino , Tetsuya Takei , Masahiro Kanai , Ryuji Okamura
发明人： Hiroaki Niino , Tetsuya Takei , Masahiro Kanai , Ryuji Okamura
IPC分类号： C23C16/50 , C23C16/511 , C23C16/54 , H01L21/205 , H01L31/04 , H01L31/20 , C23C16/00
CPC分类号： C23C16/511 , C23C16/545 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： An apparatus for continuously forming a functional deposited film on a continuously moving web member by microwave plasma CVD process, said apparatus comprises: a substantially enclosed columnar film-forming chamber having a curved circumferential wall formed by curving and projecting said web member as said web member is moving in the longitudinal direction by curved portion-forming means, said film-forming chamber having a film-forming space defined by a curved moving web member constituting said circumferential in which plasma is generated; at least a microwave applicator means capable of radiating a microwave energy in the direction of microwave to propagate, said microwave applicator means being mounted to said film forming chamber through one of the two side faces thereof such that part of said microwave applicator means is plunged into said film-forming space, at least said part of microwave applicator means having a dielectric exterior constituted by a dielectric material having a value of 2.times.10.sup.-2 or less in the product of the dielectric constant (.epsilon.) and the dielectric dissipation factor (tan .delta.) with respect to the frequency of microwave used;means for evacuating said film-forming chamber; means for introducing a film-forming raw material gas into said film-forming chamber; and a temperature controlling means.
摘要翻译： 一种用于通过微波等离子体CVD工艺在连续移动的网状构件上连续地形成功能沉积膜的装置，所述装置包括：基本上封闭的柱状成膜室，具有弯曲周向壁，该弯曲周壁通过弯曲和突出所述腹板构件而形成， 通过弯曲部分形成装置在纵向方向上移动，所述成膜室具有由形成有等离子体的周向的弯曲移动幅材构成的成膜空间; 至少一个能够沿微波方向辐射微波能量以传播的微波施加器装置，所述微波施加器装置通过其两个侧面之一安装到所述成膜室，使得所述微波施加装置的一部分被插入 所述成膜空间，所述微波施加器装置的至少所述部分具有由介电常数（ε）和介电损耗因数（tanδ）的乘积中的介电材料构成的电介质材料，所述电介质外部具有2×10 -2或更小的值 ）相对于使用微波的频率; 用于抽出所述成膜室的装置; 用于将成膜原料气体引入所述成膜室的装置; 和温度控制装置。
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4.发明授权Vacuum processing apparatus in which high frequency powers having mutually different frequencies are used to generate plasma for processing an article 有权使用具有相互不同的频率的高频功率来产生处理物品的等离子体的真空处理装置公开(公告)号：US07051671B2
公开(公告)日：2006-05-30
申请号：US10875404
申请日：2004-06-25
申请人： Makoto Aoki , Toshiyasu Shirasuna , Hiroaki Niino , Kazuyoshi Akiyama , Hitoshi Murayama , Shinji Tsuchida , Daisuke Tazawa , Yukihiro Abe
发明人： Makoto Aoki , Toshiyasu Shirasuna , Hiroaki Niino , Kazuyoshi Akiyama , Hitoshi Murayama , Shinji Tsuchida , Daisuke Tazawa , Yukihiro Abe
IPC分类号： C23C16/00
CPC分类号： H01J37/32174 , G03G5/08278 , H01J37/32082 , H01J37/32165 , H01J37/32183 , H01J37/32568
摘要： A vacuum processing method including placing an article to be processed in a reaction container and simultaneously supplying at least two high-frequency powers having different frequencies to the same high-frequency electrode to generate plasma in the reaction container by the high-frequency powers introduced into the reaction container from the high-frequency electrode. The frequencies and power values of the at least two high-frequency powers supplied satisfy a required relationship.
摘要翻译： 一种真空处理方法，包括将待处理的物品放置在反应容器中，同时向相同的高频电极提供具有不同频率的至少两个高频电源，以通过被引入到高频电极的高频功率在反应容器中产生等离子体 来自高频电极的反应容器。 提供的至少两个高频功率的频率和功率值满足所需的关系。
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5.发明授权公开(公告)号：US06849123B2
公开(公告)日：2005-02-01
申请号：US10195398
申请日：2002-07-16
IPC分类号： G03G5/08 , C23C16/24 , C23C16/32 , C23C16/509 , H01J37/32 , H01L21/205 , H01L31/18 , H01L31/20 , C30B25/10
CPC分类号： H01J37/32082 , C23C16/24 , C23C16/325 , C23C16/509 , H01J37/32165 , H01L31/1804 , H01L31/202 , Y02E10/547 , Y02P70/521
摘要： To plasma-process a substrate having a large area uniformly at a high process speed to form a deposition film with uniform thickness and quality and favorable characteristics. A first high frequency power (with a frequency f1 and a power P1) and a second high frequency power (with a frequency f2 and a power P2) supplied to an electrode from a first high frequency power supply and a second high frequency power supply, respectively, are set so that the frequencies are equal to or higher than 10 MHz and equal to or lower than 250 MHz, a ratio of the frequency f2 to the frequency f1 (f2/f1) is equal to or higher than 0.1 and equal to or lower than 0.9, and a ratio of the power P2 to a total power (P1+P2) is equal to or higher than 0.1 and equal to or lower than 0.9. The frequency f2 is changed during processing the substrate.
摘要翻译： 为了以高处理速度对具有大面积均匀的基板进行等离子体处理，以形成均匀厚度和质量以及良好特性的沉积膜。 从第一高频电源和第二高频电源提供给电极的第一高频功率（具有频率f1和功率P1）和第二高频功率（具有频率f2和功率P2） 分别被设定为使得频率等于或高于10MHz且等于或低于250MHz，频率f2与频率f1（f2 / f1）的比率等于或高于0.1并且等于 或低于0.9，功率P2与总功率（P1 + P2）的比例等于或大于0.1且等于或低于0.9。 频率f2在处理衬底期间改变。
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6.发明授权Vacuum processing method and semiconductor device manufacturing method in which high-frequency powers having mutually different frequencies are applied to at least one electrode 失效真空处理方法和半导体器件制造方法，其中具有相互不同频率的高频功率被施加到至少一个电极公开(公告)号：US06861373B2
公开(公告)日：2005-03-01
申请号：US10011776
申请日：2001-12-11
申请人： Makoto Aoki , Toshiyasu Shirasuna , Hiroaki Niino , Kazuyoshi Akiyama , Hitoshi Murayama , Shinji Tsuchida , Daisuke Tazawa , Yukihiro Abe
发明人： Makoto Aoki , Toshiyasu Shirasuna , Hiroaki Niino , Kazuyoshi Akiyama , Hitoshi Murayama , Shinji Tsuchida , Daisuke Tazawa , Yukihiro Abe
IPC分类号： H05H1/46 , C23C16/505 , G03G5/08 , G03G5/082 , H01J37/32 , H01L21/205 , G03G5/00
CPC分类号： H01J37/32174 , G03G5/08278 , H01J37/32082 , H01J37/32165 , H01J37/32183 , H01J37/32568
摘要： A vacuum processing method that includes placing an article to be processed in a reaction container and simultaneously supplying at least two high-frequency powers having mutually different frequencies to at least one high-frequency electrode to generate plasma in the reaction container by the high-frequency powers introduced into the reaction container from the high-frequency electrode(s), thereby processing the article. The frequencies and power values of the at least two high-frequency powers supplied satisfy required relationships.
摘要翻译： 一种真空处理方法，其特征在于，将待处理物品放置在反应容器中，同时向至少一个高频电极供给具有相互不同频率的至少两个高频电力，以通过高频率在反应容器中产生等离子体 从高频电极引入反应容器，从而处理制品。 提供的至少两个高频功率的频率和功率值满足所需的关系。
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公开(公告)号：US06696108B2
公开(公告)日：2004-02-24
申请号：US10006689
申请日：2001-12-10
IPC分类号： H05H146
CPC分类号： H01J37/32082 , G03G5/08278 , H01J37/32165
摘要： A vacuum processing method comprises placing an article to be processed in a reaction container and simultaneously supplying at least two high-frequency powers having mutually different frequencies to the same high-frequency electrode to generate plasma in the reaction container by the high-frequency powers admitted into the reaction container from the high-frequency electrode so as to process the article to be processed. In the method, at least the high-frequency power having a frequency f1 and the high-frequency power having a frequency f2 are used and satisfy the following two conditions as the high-frequency powers: 250 MHz≧f1>f2≧10 MHz 0.9≧f2/f1≧0.1.
摘要翻译： 真空处理方法包括将待处理物品放置在反应容器中，同时向相同的高频电极提供具有相互不同频率的至少两个高频电源，以通过高频电源在反应容器中产生等离子体 从高频电极进入反应容器，以处理待处理的物品。 在该方法中，至少使用具有频率f1的高频功率和具有频率f2的高频功率，并且满足以下两个条件作为高频功率：
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公开(公告)号：US09545904B2
公开(公告)日：2017-01-17
申请号：US13984171
申请日：2012-02-16
申请人： Yoshio Masuda , Hiroaki Niino
发明人： Yoshio Masuda , Hiroaki Niino
CPC分类号： B60T11/16 , B60T7/042 , B60T8/4077 , B60T8/4086 , B60T11/20 , B60T13/145 , B60T13/146 , B60T13/147 , B60T13/662 , B60T13/686 , B60T2270/604
摘要： The braking control device for a vehicle is adapted to be used for a vehicle brake device and it is an object of the present invention to prevent an operator of the vehicle from feeling of any an unpleasant feeling by reducing an ineffective operating amount by which no braking force increases in response to the increase of the brake operating amount. The braking control device includes a controlling portion for changing a servo performance to an ineffective operating amount reducing servo performance which is closer to the increase ratio of the hydraulic pressure braking force relative to the increase of the brake operating amount after the input piston has been in contact with the output piston when the brake operating amount reaches to the servo performance change operating amount which is smaller than the assisting limit operating amount.
摘要翻译： 车辆的制动控制装置适用于车辆制动装置，其目的是通过减少无效制动的无效操作量来防止车辆操作者感觉到任何不愉快的感觉 响应于制动操作量的增加，力增加。 制动控制装置包括用于将伺服性能改变为无效操作量的控制部分，从而降低伺服性能，其更接近液压制动力相对于输入活塞已经进入后的制动操作量的增加的增加比率 当制动操作量达到小于辅助限制操作量的伺服性能改变操作量时，与输出活塞接触。
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公开(公告)号：US08128181B2
公开(公告)日：2012-03-06
申请号：US12411832
申请日：2009-03-26
CPC分类号： B60T8/4081 , B60T8/36 , B60T8/3655 , B60T8/4059 , B60T8/4872
摘要： A braking control apparatus includes a brake operating member, a hydraulic circuit supplying a wheel cylinder hydraulic pressure to a wheel cylinder, a pump generating a hydraulic pressure so that the wheel cylinder hydraulic pressure reaches a value in response to an operation of the brake operating member, a circulation conduit provided at a portion of the hydraulic circuit, the circulation conduit through which a partial amount of brake fluid discharged from the pump is circulated back to the pump, a pressure regulating valve adjusting a pressure difference between an upstream side of the pressure regulating valve connected to the wheel cylinder and a downstream side, and a controlling device calculating, on the basis of a circulation flow rate of the brake fluid passing through the pressure regulating valve, an applied current to the pressure regulating valve for obtaining a target of the pressure difference and controlling the applied current.
摘要翻译： 制动控制装置包括制动操作构件，向轮缸提供轮缸液压的液压回路，产生液压的泵，使得轮缸液压响应于制动操作构件的操作达到一个值 设置在所述液压回路的一部分的循环管道，将从所述泵排出的部分量的制动流体循环回到所述循环管路，压力调节阀，调节所述压力的上游侧的压力差 连接到轮缸和下游侧的调节阀，以及控制装置，其基于通过压力调节阀的制动流体的循环流量计算施加的电流到压力调节阀，以获得目标值 压力差并控制施加的电流。
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公开(公告)号：US20110210604A1
公开(公告)日：2011-09-01
申请号：US13127412
申请日：2009-09-25
CPC分类号： B60T7/042 , B60T8/3655 , B60T8/4045 , B60T8/4081 , B60T13/146 , B60T2270/402
摘要： In a braking control apparatus, a plurality of pumps are driven by a common first motor. A brake supplies operating fluid to pipelines by operating the first motor, and controls opening/closing of a fluid pressure regulating valve so as to make the wheel cylinder pressure in the right front wheel approach the right front wheel target pressure, and controls opening closing of a fluid pressure regulating valve so as to make the wheel cylinder pressure in the left rear wheel approach the left rear wheel target pressure. In the case where the right front wheel target pressure is zero when the fluid pressure regulating valve is to be opened so as to make the wheel cylinder pressure in the left rear wheel approach the left rear wheel target pressure, the brake turns off the first motor.
摘要翻译： 在制动控制装置中，多个泵由共同的第一电动机驱动。 制动器通过操作第一马达向操作流体提供工作流体，并且控制流体压力调节阀的打开/关闭，以使右前轮中的轮缸压力接近右前轮目标压力，并且控制打开关闭 流体压力调节阀，以使左后轮中的轮缸压力接近左后轮目标压力。 在要开启流体压力调节阀的情况下，右前轮目标压力为零，以使左后轮中的轮缸压力接近左后轮目标压力，制动器关闭第一马达 。
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